JP2004317718A5 - - Google Patents

Download PDF

Info

Publication number
JP2004317718A5
JP2004317718A5 JP2003110254A JP2003110254A JP2004317718A5 JP 2004317718 A5 JP2004317718 A5 JP 2004317718A5 JP 2003110254 A JP2003110254 A JP 2003110254A JP 2003110254 A JP2003110254 A JP 2003110254A JP 2004317718 A5 JP2004317718 A5 JP 2004317718A5
Authority
JP
Japan
Prior art keywords
pattern
design
layer
patterns
correction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003110254A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004317718A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2003110254A priority Critical patent/JP2004317718A/ja
Priority claimed from JP2003110254A external-priority patent/JP2004317718A/ja
Priority to US10/823,539 priority patent/US7402363B2/en
Publication of JP2004317718A publication Critical patent/JP2004317718A/ja
Publication of JP2004317718A5 publication Critical patent/JP2004317718A5/ja
Priority to US12/216,220 priority patent/US8042067B2/en
Pending legal-status Critical Current

Links

JP2003110254A 2003-04-15 2003-04-15 パターン作成方法、パターン作成システム、および半導体装置の製造方法 Pending JP2004317718A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003110254A JP2004317718A (ja) 2003-04-15 2003-04-15 パターン作成方法、パターン作成システム、および半導体装置の製造方法
US10/823,539 US7402363B2 (en) 2003-04-15 2004-04-14 Pattern forming method and system, and method of manufacturing a semiconductor device
US12/216,220 US8042067B2 (en) 2003-04-15 2008-07-01 Pattern forming method and system, and method of manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003110254A JP2004317718A (ja) 2003-04-15 2003-04-15 パターン作成方法、パターン作成システム、および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2004317718A JP2004317718A (ja) 2004-11-11
JP2004317718A5 true JP2004317718A5 (enExample) 2005-07-28

Family

ID=33471165

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003110254A Pending JP2004317718A (ja) 2003-04-15 2003-04-15 パターン作成方法、パターン作成システム、および半導体装置の製造方法

Country Status (2)

Country Link
US (2) US7402363B2 (enExample)
JP (1) JP2004317718A (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6667385B2 (en) * 2002-01-28 2003-12-23 Energenetics International, Inc. Method of producing aminium lactate salt as a feedstock for dilactic acid or dimer production
JP4398824B2 (ja) 2004-09-08 2010-01-13 株式会社東芝 パターンデータの補正方法、フォトマスクの製造方法、半導体装置の製造方法及びプログラム
JP4642584B2 (ja) * 2005-07-29 2011-03-02 キヤノン株式会社 マスク作成方法及び露光方法
US7503028B2 (en) * 2006-01-10 2009-03-10 International Business Machines Corporation Multilayer OPC for design aware manufacturing
KR100807229B1 (ko) * 2006-07-31 2008-02-28 삼성전자주식회사 마스크의 설계 패턴 보정 방법
US20100205573A1 (en) * 2007-07-06 2010-08-12 Sagantiec Israel Ltd. Layout modification engine for modifying a circuit layout comprising fixed and free layout entities
KR20090032293A (ko) * 2007-09-27 2009-04-01 삼성전자주식회사 모델 베이스 광 근접 효과 보정을 이용한 마스크 제조방법및 이를 이용한 반도체 소자의 제조방법
WO2013011112A1 (en) * 2011-07-20 2013-01-24 Carl Zeiss Sms Ltd. Method and apparatus for determining a critical dimension variation of a photolithographic mask
CN110221514B (zh) * 2018-03-02 2022-12-16 中芯国际集成电路制造(上海)有限公司 光学邻近校正方法及掩膜版的制作方法
US20220390828A1 (en) * 2021-06-07 2022-12-08 United Microelectronics Corp. Method of making mask pattern and method of forming pattern in layer

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3934719B2 (ja) 1995-12-22 2007-06-20 株式会社東芝 光近接効果補正方法
JPH1055059A (ja) 1996-08-09 1998-02-24 Hitachi Ltd フォトマスクの製造方法および半導体集積回路装置の製造方法
US6316163B1 (en) * 1997-10-01 2001-11-13 Kabushiki Kaisha Toshiba Pattern forming method
JP3278057B2 (ja) * 1998-12-14 2002-04-30 日本電気株式会社 半導体製造プロセスの光近接効果補正方法およびマスクデータ形成方法
JP4115615B2 (ja) 1999-03-11 2008-07-09 株式会社東芝 マスクパターン設計方法
JP4352498B2 (ja) 1999-03-26 2009-10-28 ソニー株式会社 パターン露光方法とこれに用いる処理装置
JP2001083689A (ja) 1999-09-14 2001-03-30 Toshiba Corp 半導体製造用マスクのパターン補正方法およびそのパターン補正方法を記録した記録媒体
JP3805936B2 (ja) * 1999-12-28 2006-08-09 株式会社東芝 マスクパターン補正方法及びマスクパターン作成システム
JP4064617B2 (ja) 2000-10-26 2008-03-19 株式会社東芝 マスクパターン補正方法、マスクパターン補正装置、マスクパターン補正プログラムを格納した記録媒体、及び半導体装置の製造方法
JP2003133417A (ja) * 2001-10-26 2003-05-09 Matsushita Electric Ind Co Ltd 半導体集積回路装置及びその設計方法
US7804994B2 (en) * 2002-02-15 2010-09-28 Kla-Tencor Technologies Corporation Overlay metrology and control method

Similar Documents

Publication Publication Date Title
CN106933028B (zh) 掩膜版图形的修正方法
US9287131B2 (en) Methods of patterning line-type features using a multiple patterning process that enables the use of tighter contact enclosure spacing rules
US8782571B2 (en) Multiple patterning process for forming trenches or holes using stitched assist features
KR102185558B1 (ko) 광학적 근접 보정 방법
US8302035B2 (en) Method for verifying optical proximity correction
US9064085B2 (en) Method for adjusting target layout based on intensity of background light in etch mask layer
JP2004317718A5 (enExample)
CN110850677A (zh) 光刻层掩膜版的制备方法、离子注入方法
US8881069B1 (en) Process enhancing safe SRAF printing using etch aware print avoidance
US20080052660A1 (en) Method of correcting a designed pattern of a mask
US8748066B2 (en) Method for forming photomasks
TW200632540A (en) Method for correcting mask pattern, photomask, method for fabricating photomask, electron beam writing method for fabricating photomask, exposure method, semiconductor device, and method for fabricating semiconductor device
KR101096270B1 (ko) 스페이서 패터닝을 이용한 반도체소자의 미세패턴 형성방법
US8324106B2 (en) Methods for fabricating a photolithographic mask and for fabricating a semiconductor integrated circuit using such a mask
KR20100011756A (ko) 어시스트 패턴이 삽입된 레이아웃의 광 근접효과 보정방법
US9017903B2 (en) Mask overlay control
KR20090072670A (ko) 노광마스크 형성방법 및 이를 이용한 반도체소자 형성방법
US8048592B2 (en) Photomask
US8703611B1 (en) Method for manufacturing a semiconductor structure
CN114167681B (zh) 缺陷检测方法、掩膜版制作方法及半导体结构形成方法
CN104037072B (zh) 离子注入层图形线宽尺寸的优化方法
JP2007065246A (ja) 露光用マスク、マスクパターン補正方法、及び、半導体装置
KR20110079110A (ko) 광 근접 효과 보정 방법
KR100457223B1 (ko) 정렬 마크로 이용 가능한 중첩도 측정 패턴 형성방법
JP2006350395A5 (enExample)