JP2004247323A5 - - Google Patents
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- JP2004247323A5 JP2004247323A5 JP2002318469A JP2002318469A JP2004247323A5 JP 2004247323 A5 JP2004247323 A5 JP 2004247323A5 JP 2002318469 A JP2002318469 A JP 2002318469A JP 2002318469 A JP2002318469 A JP 2002318469A JP 2004247323 A5 JP2004247323 A5 JP 2004247323A5
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- 230000000052 comparative effect Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002318469A JP4063050B2 (ja) | 2002-10-31 | 2002-10-31 | ｐ型ＩＩＩ族窒化物系化合物半導体の電極およびその製造方法 |
| US10/695,453 US7190076B2 (en) | 2002-10-31 | 2003-10-29 | Electrode for p-type Group III nitride compound semiconductor layer and method for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002318469A JP4063050B2 (ja) | 2002-10-31 | 2002-10-31 | ｐ型ＩＩＩ族窒化物系化合物半導体の電極およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004247323A JP2004247323A (ja) | 2004-09-02 |
| JP2004247323A5 true JP2004247323A5 (https=) | 2005-04-07 |
| JP4063050B2 JP4063050B2 (ja) | 2008-03-19 |
Family
ID=32676997
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002318469A Expired - Fee Related JP4063050B2 (ja) | 2002-10-31 | 2002-10-31 | ｐ型ＩＩＩ族窒化物系化合物半導体の電極およびその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7190076B2 (https=) |
| JP (1) | JP4063050B2 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8431475B2 (en) * | 2007-08-31 | 2013-04-30 | Lattice Power (Jiangxi) Corporation | Method for fabricating a low-resistivity ohmic contact to a p-type III-V nitride semiconductor material at low temperature |
| US20090238227A1 (en) * | 2008-03-05 | 2009-09-24 | Rohm Co., Ltd. | Semiconductor light emitting device |
| JP2009212343A (ja) * | 2008-03-05 | 2009-09-17 | Rohm Co Ltd | 窒化物半導体素子および窒化物半導体素子の製造方法 |
| JP5749888B2 (ja) | 2010-01-18 | 2015-07-15 | 住友電気工業株式会社 | 半導体素子及び半導体素子を作製する方法 |
| JP2011146639A (ja) | 2010-01-18 | 2011-07-28 | Sumitomo Electric Ind Ltd | Ｉｉｉ族窒化物系半導体素子 |
| JP6111818B2 (ja) | 2013-04-24 | 2017-04-12 | 三菱電機株式会社 | 半導体素子、半導体素子の製造方法 |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3207918B2 (ja) * | 1991-04-22 | 2001-09-10 | キヤノン株式会社 | Ｉｉｉ−ｖ族化合物の多結晶半導体材料を用いた発光素子およびその製造方法 |
| JPH0531957A (ja) * | 1991-05-23 | 1993-02-09 | Canon Inc | 発光装置、これを用いた光書き込みプリンターヘツド並びに該光書き込みプリンターヘツドによる光プリンター装置 |
| US5602418A (en) * | 1992-08-07 | 1997-02-11 | Asahi Kasei Kogyo Kabushiki Kaisha | Nitride based semiconductor device and manufacture thereof |
| JP2803742B2 (ja) | 1993-04-28 | 1998-09-24 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体発光素子及びその電極形成方法 |
| US5751752A (en) * | 1994-09-14 | 1998-05-12 | Rohm Co., Ltd. | Semiconductor light emitting device and manufacturing method therefor |
| JP3773282B2 (ja) | 1995-03-27 | 2006-05-10 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体の電極形成方法 |
| JP3700872B2 (ja) * | 1995-12-28 | 2005-09-28 | シャープ株式会社 | 窒化物系ｉｉｉ−ｖ族化合物半導体装置およびその製造方法 |
| EP0831538A3 (en) * | 1996-09-19 | 1999-07-14 | Canon Kabushiki Kaisha | Photovoltaic element having a specific doped layer |
| JP3457516B2 (ja) * | 1997-08-27 | 2003-10-20 | 株式会社東芝 | 窒化ガリウム系化合物半導体素子 |
| JPH11177034A (ja) * | 1997-12-09 | 1999-07-02 | Sony Corp | メモリ素子およびメモリアレイ |
| US6492190B2 (en) * | 1998-10-05 | 2002-12-10 | Sony Corporation | Method of producing electrooptical device and method of producing driving substrate for driving electrooptical device |
| JP3592553B2 (ja) * | 1998-10-15 | 2004-11-24 | 株式会社東芝 | 窒化ガリウム系半導体装置 |
| JP3616514B2 (ja) * | 1998-11-17 | 2005-02-02 | 株式会社東芝 | 半導体集積回路及びその製造方法 |
| JP2001005338A (ja) * | 1999-06-23 | 2001-01-12 | Copyer Co Ltd | 画像形成装置 |
| JP4228560B2 (ja) * | 2000-11-01 | 2009-02-25 | ソニー株式会社 | キャパシタ素子及びその製造方法 |
| JP3881840B2 (ja) * | 2000-11-14 | 2007-02-14 | 独立行政法人産業技術総合研究所 | 半導体装置 |
| TWI313059B (https=) * | 2000-12-08 | 2009-08-01 | Sony Corporatio | |
| US6720241B2 (en) * | 2001-06-18 | 2004-04-13 | Matsushita Electric Industrial Co., Ltd. | Method for manufacturing semiconductor device |
| US6911694B2 (en) * | 2001-06-27 | 2005-06-28 | Ricoh Company, Ltd. | Semiconductor device and method for fabricating such device |
| US6600179B2 (en) * | 2001-11-01 | 2003-07-29 | M/A-Com, Inc. | Power amplifier with base and collector straps |
| JP2003177063A (ja) * | 2001-12-12 | 2003-06-27 | Fuji Xerox Co Ltd | 紫外線受光器、及びそれを用いた紫外線光量測定方法 |
| AU2003206129A1 (en) * | 2002-01-28 | 2003-09-02 | Showa Denko K.K. | Boron phosphide-based semiconductor device, production method thereof, light-emitting diode and boron phosphide-based semiconductor layer |
| US6794245B2 (en) * | 2002-07-18 | 2004-09-21 | Micron Technology, Inc. | Methods of fabricating double-sided hemispherical silicon grain electrodes and capacitor modules |
| JP3699946B2 (ja) * | 2002-07-25 | 2005-09-28 | 株式会社東芝 | 半導体装置の製造方法 |
| US6911695B2 (en) * | 2002-09-19 | 2005-06-28 | Intel Corporation | Transistor having insulating spacers on gate sidewalls to reduce overlap between the gate and doped extension regions of the source and drain |
| US6779837B1 (en) * | 2003-10-03 | 2004-08-24 | Arvinmeritor Technology, Llc | Mesh side shield for vehicle sunroof |
| US20050136633A1 (en) * | 2003-12-18 | 2005-06-23 | Taylor William J.Jr. | Blocking layer for silicide uniformity in a semiconductor transistor |
-
2002
- 2002-10-31 JP JP2002318469A patent/JP4063050B2/ja not_active Expired - Fee Related
-
2003
- 2003-10-29 US US10/695,453 patent/US7190076B2/en not_active Expired - Lifetime
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