JP4063050B2 - ｐ型ＩＩＩ族窒化物系化合物半導体の電極およびその製造方法 - Google Patents

ｐ型ＩＩＩ族窒化物系化合物半導体の電極およびその製造方法 Download PDF

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Publication number
JP4063050B2
JP4063050B2 JP2002318469A JP2002318469A JP4063050B2 JP 4063050 B2 JP4063050 B2 JP 4063050B2 JP 2002318469 A JP2002318469 A JP 2002318469A JP 2002318469 A JP2002318469 A JP 2002318469A JP 4063050 B2 JP4063050 B2 JP 4063050B2
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Japan
Prior art keywords
compound semiconductor
iii nitride
group iii
nitride compound
metal
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Expired - Fee Related
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JP2002318469A
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Japanese (ja)
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JP2004247323A5 (https=
JP2004247323A (ja
Inventor
一平 藤本
務 関根
実希 守山
正紀 村上
直樹 柴田
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Toyoda Gosei Co Ltd
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Toyoda Gosei Co Ltd
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Priority to JP2002318469A priority Critical patent/JP4063050B2/ja
Priority to US10/695,453 priority patent/US7190076B2/en
Publication of JP2004247323A publication Critical patent/JP2004247323A/ja
Publication of JP2004247323A5 publication Critical patent/JP2004247323A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0116—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group III-V semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material

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  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)
JP2002318469A 2002-10-31 2002-10-31 ｐ型ＩＩＩ族窒化物系化合物半導体の電極およびその製造方法 Expired - Fee Related JP4063050B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002318469A JP4063050B2 (ja) 2002-10-31 2002-10-31 ｐ型ＩＩＩ族窒化物系化合物半導体の電極およびその製造方法
US10/695,453 US7190076B2 (en) 2002-10-31 2003-10-29 Electrode for p-type Group III nitride compound semiconductor layer and method for producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002318469A JP4063050B2 (ja) 2002-10-31 2002-10-31 ｐ型ＩＩＩ族窒化物系化合物半導体の電極およびその製造方法

Publications (3)

Publication Number Publication Date
JP2004247323A JP2004247323A (ja) 2004-09-02
JP2004247323A5 JP2004247323A5 (https=) 2005-04-07
JP4063050B2 true JP4063050B2 (ja) 2008-03-19

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JP2002318469A Expired - Fee Related JP4063050B2 (ja) 2002-10-31 2002-10-31 ｐ型ＩＩＩ族窒化物系化合物半導体の電極およびその製造方法

Country Status (2)

Country Link
US (1) US7190076B2 (https=)
JP (1) JP4063050B2 (https=)

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US20090238227A1 (en) * 2008-03-05 2009-09-24 Rohm Co., Ltd. Semiconductor light emitting device
JP2009212343A (ja) * 2008-03-05 2009-09-17 Rohm Co Ltd 窒化物半導体素子および窒化物半導体素子の製造方法
JP5749888B2 (ja) 2010-01-18 2015-07-15 住友電気工業株式会社 半導体素子及び半導体素子を作製する方法
JP2011146639A (ja) 2010-01-18 2011-07-28 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物系半導体素子
JP6111818B2 (ja) 2013-04-24 2017-04-12 三菱電機株式会社 半導体素子、半導体素子の製造方法

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US5602418A (en) * 1992-08-07 1997-02-11 Asahi Kasei Kogyo Kabushiki Kaisha Nitride based semiconductor device and manufacture thereof
JP2803742B2 (ja) 1993-04-28 1998-09-24 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子及びその電極形成方法
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JP3700872B2 (ja) * 1995-12-28 2005-09-28 シャープ株式会社 窒化物系ｉｉｉ−ｖ族化合物半導体装置およびその製造方法
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Also Published As

Publication number Publication date
US20040130025A1 (en) 2004-07-08
JP2004247323A (ja) 2004-09-02
US7190076B2 (en) 2007-03-13

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