JP2004241769A5 - - Google Patents

Download PDF

Info

Publication number
JP2004241769A5
JP2004241769A5 JP2004008872A JP2004008872A JP2004241769A5 JP 2004241769 A5 JP2004241769 A5 JP 2004241769A5 JP 2004008872 A JP2004008872 A JP 2004008872A JP 2004008872 A JP2004008872 A JP 2004008872A JP 2004241769 A5 JP2004241769 A5 JP 2004241769A5
Authority
JP
Japan
Prior art keywords
resist pattern
photosensitive agent
light
conductive material
discharging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004008872A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004241769A (ja
JP4656843B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004008872A priority Critical patent/JP4656843B2/ja
Priority claimed from JP2004008872A external-priority patent/JP4656843B2/ja
Publication of JP2004241769A publication Critical patent/JP2004241769A/ja
Publication of JP2004241769A5 publication Critical patent/JP2004241769A5/ja
Application granted granted Critical
Publication of JP4656843B2 publication Critical patent/JP4656843B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2004008872A 2003-01-17 2004-01-16 半導体装置の作製方法 Expired - Fee Related JP4656843B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004008872A JP4656843B2 (ja) 2003-01-17 2004-01-16 半導体装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003009111 2003-01-17
JP2004008872A JP4656843B2 (ja) 2003-01-17 2004-01-16 半導体装置の作製方法

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP2010117926A Division JP4667529B2 (ja) 2003-01-17 2010-05-24 半導体装置の作製方法
JP2010158978A Division JP4667532B2 (ja) 2003-01-17 2010-07-13 半導体装置の作製方法
JP2010258031A Division JP5288639B2 (ja) 2003-01-17 2010-11-18 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2004241769A JP2004241769A (ja) 2004-08-26
JP2004241769A5 true JP2004241769A5 (enExample) 2008-11-06
JP4656843B2 JP4656843B2 (ja) 2011-03-23

Family

ID=32964808

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004008872A Expired - Fee Related JP4656843B2 (ja) 2003-01-17 2004-01-16 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4656843B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8053171B2 (en) 2004-01-16 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Substrate having film pattern and manufacturing method of the same, manufacturing method of semiconductor device, liquid crystal television, and EL television
CN100424831C (zh) * 2004-10-15 2008-10-08 松下电器产业株式会社 导电性图案、电子器件的制造方法及电子器件
US7498119B2 (en) * 2006-01-20 2009-03-03 Palo Alto Research Center Incorporated Process for forming a feature by undercutting a printed mask
JP2008177253A (ja) * 2007-01-16 2008-07-31 Sharp Corp 電子デバイスの製造方法、レジストパターン形成システム、電子デバイス、及び薄膜トランジスタ
JP2009224653A (ja) * 2008-03-18 2009-10-01 Sat:Kk フォトレジスト塗布装置
JP2014106302A (ja) * 2012-11-26 2014-06-09 Rainbow Technology Systems Ltd 改良されたフォトイメージング
JP5611399B2 (ja) * 2013-03-25 2014-10-22 キヤノン株式会社 加工装置
JP2015216233A (ja) * 2014-05-09 2015-12-03 株式会社ディスコ エッチング方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02139972A (ja) * 1988-11-21 1990-05-29 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH04282839A (ja) * 1991-03-11 1992-10-07 Toshiba Corp 薄膜トランジスタ及びその製造方法
JPH06182980A (ja) * 1992-12-22 1994-07-05 Matsushita Electric Works Ltd インクジェットプリンターによる印刷装置
JP2002107744A (ja) * 2000-09-27 2002-04-10 Koninkl Philips Electronics Nv 電極形成方法、画素電極形成方法、及び液晶表示装置
JP2002318394A (ja) * 2001-04-23 2002-10-31 Matsushita Electric Ind Co Ltd 液晶表示装置の製造方法

Similar Documents

Publication Publication Date Title
TW200723453A (en) Semiconductor device and method of manufacturing the same
JP5719832B2 (ja) 二重自己整合式金属酸化物薄膜トランジスタ
JP2014202838A5 (enExample)
JP6001336B2 (ja) 薄膜トランジスタ及びアレイ基板の製造方法
CN102646633B (zh) 阵列基板及其制作方法
TWI549160B (zh) 晶圓的製備方法
WO2008059440A3 (en) Double patterning for lithography to increase feature spatial density
JP2009545774A5 (enExample)
JP2007512680A5 (enExample)
CN105870169A (zh) 薄膜晶体管及其制作方法、阵列基板、显示装置
JP2008073768A5 (enExample)
KR20140052005A (ko) 마스크의 수가 감소된 자체 정렬 금속 산화물 ｔｆｔ
KR20050032581A (ko) 갭 결함을 가진 리소그라픽 템플릿을 형성하고 수리하는방법
GB2407704B (en) Manufacturing method of a thin film transistor array substrate
JP2004241769A5 (enExample)
TW200627037A (en) Thin film transistor array panel and manufacturing method thereof
JP2005244197A5 (enExample)
TW200715561A (en) Thin film transistor array panel and fabrication
JP2005244203A5 (enExample)
JP2006245557A5 (enExample)
TW200744214A (en) Method for manufacturing thin film transistor substrate using maskless exposing device
CN107359205B (zh) 薄膜晶体管及制备方法、阵列基板及制备方法、显示面板
TW200622996A (en) Method of fabricating a pixel structure of a thin film transistor liquid crystal display
US20180097023A1 (en) Thin Film Transistor, Array Substrate and Manufacturing Method Thereof, and Display Panel
CN109742089B (zh) 显示基板、显示装置和显示基板的制造方法