JP4656843B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4656843B2
JP4656843B2 JP2004008872A JP2004008872A JP4656843B2 JP 4656843 B2 JP4656843 B2 JP 4656843B2 JP 2004008872 A JP2004008872 A JP 2004008872A JP 2004008872 A JP2004008872 A JP 2004008872A JP 4656843 B2 JP4656843 B2 JP 4656843B2
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JP
Japan
Prior art keywords
resist pattern
film
substrate
resist
light
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Expired - Fee Related
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JP2004008872A
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English (en)
Japanese (ja)
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JP2004241769A (ja
JP2004241769A5 (enExample
Inventor
舜平 山崎
康子 渡辺
康行 荒井
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2004008872A priority Critical patent/JP4656843B2/ja
Publication of JP2004241769A publication Critical patent/JP2004241769A/ja
Publication of JP2004241769A5 publication Critical patent/JP2004241769A5/ja
Application granted granted Critical
Publication of JP4656843B2 publication Critical patent/JP4656843B2/ja
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Expired - Fee Related legal-status Critical Current

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  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Ink Jet (AREA)
JP2004008872A 2003-01-17 2004-01-16 半導体装置の作製方法 Expired - Fee Related JP4656843B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004008872A JP4656843B2 (ja) 2003-01-17 2004-01-16 半導体装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003009111 2003-01-17
JP2004008872A JP4656843B2 (ja) 2003-01-17 2004-01-16 半導体装置の作製方法

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP2010117926A Division JP4667529B2 (ja) 2003-01-17 2010-05-24 半導体装置の作製方法
JP2010158978A Division JP4667532B2 (ja) 2003-01-17 2010-07-13 半導体装置の作製方法
JP2010258031A Division JP5288639B2 (ja) 2003-01-17 2010-11-18 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2004241769A JP2004241769A (ja) 2004-08-26
JP2004241769A5 JP2004241769A5 (enExample) 2008-11-06
JP4656843B2 true JP4656843B2 (ja) 2011-03-23

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ID=32964808

Family Applications (1)

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JP2004008872A Expired - Fee Related JP4656843B2 (ja) 2003-01-17 2004-01-16 半導体装置の作製方法

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JP (1) JP4656843B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8053171B2 (en) 2004-01-16 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Substrate having film pattern and manufacturing method of the same, manufacturing method of semiconductor device, liquid crystal television, and EL television
CN100424831C (zh) * 2004-10-15 2008-10-08 松下电器产业株式会社 导电性图案、电子器件的制造方法及电子器件
US7498119B2 (en) * 2006-01-20 2009-03-03 Palo Alto Research Center Incorporated Process for forming a feature by undercutting a printed mask
JP2008177253A (ja) * 2007-01-16 2008-07-31 Sharp Corp 電子デバイスの製造方法、レジストパターン形成システム、電子デバイス、及び薄膜トランジスタ
JP2009224653A (ja) * 2008-03-18 2009-10-01 Sat:Kk フォトレジスト塗布装置
JP2014106302A (ja) * 2012-11-26 2014-06-09 Rainbow Technology Systems Ltd 改良されたフォトイメージング
JP5611399B2 (ja) * 2013-03-25 2014-10-22 キヤノン株式会社 加工装置
JP2015216233A (ja) * 2014-05-09 2015-12-03 株式会社ディスコ エッチング方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02139972A (ja) * 1988-11-21 1990-05-29 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH04282839A (ja) * 1991-03-11 1992-10-07 Toshiba Corp 薄膜トランジスタ及びその製造方法
JPH06182980A (ja) * 1992-12-22 1994-07-05 Matsushita Electric Works Ltd インクジェットプリンターによる印刷装置
JP2002107744A (ja) * 2000-09-27 2002-04-10 Koninkl Philips Electronics Nv 電極形成方法、画素電極形成方法、及び液晶表示装置
JP2002318394A (ja) * 2001-04-23 2002-10-31 Matsushita Electric Ind Co Ltd 液晶表示装置の製造方法

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Publication number Publication date
JP2004241769A (ja) 2004-08-26

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