JP2004213830A - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

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Publication number
JP2004213830A
JP2004213830A JP2003002472A JP2003002472A JP2004213830A JP 2004213830 A JP2004213830 A JP 2004213830A JP 2003002472 A JP2003002472 A JP 2003002472A JP 2003002472 A JP2003002472 A JP 2003002472A JP 2004213830 A JP2004213830 A JP 2004213830A
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JP
Japan
Prior art keywords
column
write
memory cell
writing
bit line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003002472A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004213830A5 (enExample
Inventor
Kenichi Shigenami
賢一 重並
Shunichi Sukegawa
俊一 助川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2003002472A priority Critical patent/JP2004213830A/ja
Priority to US10/749,559 priority patent/US7012831B2/en
Publication of JP2004213830A publication Critical patent/JP2004213830A/ja
Publication of JP2004213830A5 publication Critical patent/JP2004213830A5/ja
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40603—Arbitration, priority and concurrent access to memory cells for read/write or refresh operations
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40622—Partial refresh of memory arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
JP2003002472A 2003-01-08 2003-01-08 半導体記憶装置 Pending JP2004213830A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2003002472A JP2004213830A (ja) 2003-01-08 2003-01-08 半導体記憶装置
US10/749,559 US7012831B2 (en) 2003-01-08 2004-01-02 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003002472A JP2004213830A (ja) 2003-01-08 2003-01-08 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2004213830A true JP2004213830A (ja) 2004-07-29
JP2004213830A5 JP2004213830A5 (enExample) 2005-04-07

Family

ID=32820205

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003002472A Pending JP2004213830A (ja) 2003-01-08 2003-01-08 半導体記憶装置

Country Status (2)

Country Link
US (1) US7012831B2 (enExample)
JP (1) JP2004213830A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007257682A (ja) * 2006-03-20 2007-10-04 Sony Corp 半導体メモリデバイスとその動作方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7375999B2 (en) * 2005-09-29 2008-05-20 Infineon Technologies Ag Low equalized sense-amp for twin cell DRAMs
KR100780613B1 (ko) * 2006-06-30 2007-11-29 주식회사 하이닉스반도체 반도체 메모리 소자 및 그 구동방법
DE102007042879B3 (de) * 2007-09-08 2009-06-10 Qimonda Ag Speichervorrichtung mit Bewertungsschaltung für die elektrische Ladung einer Speicherzelle
KR101975528B1 (ko) 2012-07-17 2019-05-07 삼성전자주식회사 패스트 어레이 영역을 갖는 반도체 메모리 셀 어레이 및 그것을 포함하는 반도체 메모리
US20140146589A1 (en) * 2012-11-29 2014-05-29 Samsung Electronics Co., Ltd. Semiconductor memory device with cache function in dram
US9324414B2 (en) * 2013-07-24 2016-04-26 Stmicroelectronics International N.V. Selective dual cycle write operation for a self-timed memory
US9711206B2 (en) * 2014-06-05 2017-07-18 Micron Technology, Inc. Performing logical operations using sensing circuitry
KR20160063726A (ko) * 2014-11-27 2016-06-07 에스케이하이닉스 주식회사 메모리 장치 및 이를 포함하는 메모리 시스템
KR20180058478A (ko) * 2016-11-24 2018-06-01 에스케이하이닉스 주식회사 반도체 장치, 이를 포함하는 반도체 시스템 및 반도체 장치의 리드 및 라이트 동작 방법
US11605421B2 (en) * 2020-07-17 2023-03-14 Micron Technology, Inc. Semiconductor device having driver circuits and sense amplifiers

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4943944A (en) * 1987-11-25 1990-07-24 Kabushiki Kaisha Toshiba Semiconductor memory using dynamic ram cells
JPH01143094A (ja) * 1987-11-28 1989-06-05 Mitsubishi Electric Corp 半導体記憶装置
JP3101298B2 (ja) * 1990-03-30 2000-10-23 株式会社東芝 半導体メモリ装置
JP3101297B2 (ja) * 1990-03-30 2000-10-23 株式会社東芝 半導体メモリ装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007257682A (ja) * 2006-03-20 2007-10-04 Sony Corp 半導体メモリデバイスとその動作方法

Also Published As

Publication number Publication date
US7012831B2 (en) 2006-03-14
US20040190326A1 (en) 2004-09-30

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