JP2004186393A5 - - Google Patents

Download PDF

Info

Publication number
JP2004186393A5
JP2004186393A5 JP2002351112A JP2002351112A JP2004186393A5 JP 2004186393 A5 JP2004186393 A5 JP 2004186393A5 JP 2002351112 A JP2002351112 A JP 2002351112A JP 2002351112 A JP2002351112 A JP 2002351112A JP 2004186393 A5 JP2004186393 A5 JP 2004186393A5
Authority
JP
Japan
Prior art keywords
semiconductor film
region
film including
transistor
channel region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002351112A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004186393A (ja
JP4356309B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2002351112A external-priority patent/JP4356309B2/ja
Priority to JP2002351112A priority Critical patent/JP4356309B2/ja
Priority to US10/717,503 priority patent/US7084428B2/en
Priority to TW092133711A priority patent/TWI238531B/zh
Priority to KR1020030086370A priority patent/KR100594835B1/ko
Priority to CNB2003101195206A priority patent/CN1278429C/zh
Publication of JP2004186393A publication Critical patent/JP2004186393A/ja
Publication of JP2004186393A5 publication Critical patent/JP2004186393A5/ja
Publication of JP4356309B2 publication Critical patent/JP4356309B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2002351112A 2002-12-03 2002-12-03 トランジスタ、集積回路、電気光学装置、電子機器 Expired - Fee Related JP4356309B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2002351112A JP4356309B2 (ja) 2002-12-03 2002-12-03 トランジスタ、集積回路、電気光学装置、電子機器
US10/717,503 US7084428B2 (en) 2002-12-03 2003-11-21 Transistor, integrated circuit, electro-optic device, electronic instrument and method of manufacturing a transistor
CNB2003101195206A CN1278429C (zh) 2002-12-03 2003-12-01 晶体管、集成电路、电光装置、电子设备及其制造方法
KR1020030086370A KR100594835B1 (ko) 2002-12-03 2003-12-01 액티브 매트릭스 기판, 전기 광학 장치, 전자 기기 및 트랜지스터의 제조 방법
TW092133711A TWI238531B (en) 2002-12-03 2003-12-01 Transistor, integrated circuit, electro-optic device, electronic instrument and method of manufacturing a transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002351112A JP4356309B2 (ja) 2002-12-03 2002-12-03 トランジスタ、集積回路、電気光学装置、電子機器

Publications (3)

Publication Number Publication Date
JP2004186393A JP2004186393A (ja) 2004-07-02
JP2004186393A5 true JP2004186393A5 (enExample) 2005-09-15
JP4356309B2 JP4356309B2 (ja) 2009-11-04

Family

ID=32753117

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002351112A Expired - Fee Related JP4356309B2 (ja) 2002-12-03 2002-12-03 トランジスタ、集積回路、電気光学装置、電子機器

Country Status (5)

Country Link
US (1) US7084428B2 (enExample)
JP (1) JP4356309B2 (enExample)
KR (1) KR100594835B1 (enExample)
CN (1) CN1278429C (enExample)
TW (1) TWI238531B (enExample)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005048222A1 (en) * 2003-11-14 2005-05-26 Semiconductor Energy Laboratory Co., Ltd. Light emitting display device, method for manufacturing the same, and tv set
US7439086B2 (en) * 2003-11-14 2008-10-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing liquid crystal display device
JP2005259848A (ja) * 2004-03-10 2005-09-22 Toshiba Corp 半導体装置及びその製造方法
KR100611886B1 (ko) * 2004-06-25 2006-08-11 삼성에스디아이 주식회사 개량된 구조의 트랜지스터를 구비한 화소 회로 및 유기발광 표시장치
KR101186966B1 (ko) * 2004-11-09 2012-10-02 코닌클리케 필립스 일렉트로닉스 엔.브이. 유기 트랜지스터를 제조하기 위한 자체-정렬 공정
JP4865999B2 (ja) * 2004-11-19 2012-02-01 株式会社日立製作所 電界効果トランジスタの作製方法
JP2006195142A (ja) * 2005-01-13 2006-07-27 Future Vision:Kk 配線パターンを有する基板及びそれを用いた液晶表示装置
JP4455517B2 (ja) 2005-03-04 2010-04-21 三星モバイルディスプレイ株式會社 薄膜トランジスタの製造方法
KR100647695B1 (ko) * 2005-05-27 2006-11-23 삼성에스디아이 주식회사 유기 박막 트랜지스터 및 그의 제조방법과 이를 구비한평판표시장치
KR101209046B1 (ko) * 2005-07-27 2012-12-06 삼성디스플레이 주식회사 박막트랜지스터 기판과 박막트랜지스터 기판의 제조방법
JP4506605B2 (ja) 2005-07-28 2010-07-21 ソニー株式会社 半導体装置の製造方法
KR101240656B1 (ko) * 2005-08-01 2013-03-08 삼성디스플레이 주식회사 평판표시장치와 평판표시장치의 제조방법
JP5259977B2 (ja) * 2006-04-28 2013-08-07 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
US7608892B2 (en) * 2006-04-28 2009-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
JP5500771B2 (ja) * 2006-12-05 2014-05-21 株式会社半導体エネルギー研究所 半導体装置及びマイクロプロセッサ
JP5325465B2 (ja) * 2008-06-03 2013-10-23 株式会社日立製作所 薄膜トランジスタおよびそれを用いた装置
WO2011096275A1 (en) * 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20130007597A (ko) * 2010-03-08 2013-01-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치를 제작하는 방법
JP5567886B2 (ja) * 2010-04-09 2014-08-06 株式会社半導体エネルギー研究所 半導体装置
US8207025B2 (en) * 2010-04-09 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
KR101809661B1 (ko) * 2011-06-03 2017-12-18 삼성디스플레이 주식회사 박막 트랜지스터, 그 제조 방법 및 이를 포함하는 유기 발광 표시 장치
CN103000692A (zh) * 2011-09-14 2013-03-27 鸿富锦精密工业（深圳）有限公司 薄膜晶体管结构及其制造方法
WO2013039126A1 (en) * 2011-09-16 2013-03-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8952379B2 (en) * 2011-09-16 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2013042562A1 (en) * 2011-09-22 2013-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102089505B1 (ko) * 2011-09-23 2020-03-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN103843145B (zh) 2011-09-29 2017-03-29 株式会社半导体能源研究所 半导体装置
JP5806905B2 (ja) 2011-09-30 2015-11-10 株式会社半導体エネルギー研究所 半導体装置
US8637864B2 (en) * 2011-10-13 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP5912394B2 (ja) * 2011-10-13 2016-04-27 株式会社半導体エネルギー研究所 半導体装置
SG10201601757UA (en) 2011-10-14 2016-04-28 Semiconductor Energy Lab Semiconductor device
KR20130040706A (ko) * 2011-10-14 2013-04-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR20130055521A (ko) * 2011-11-18 2013-05-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 소자, 및 반도체 소자의 제작 방법, 및 반도체 소자를 포함하는 반도체 장치
KR102103913B1 (ko) * 2012-01-10 2020-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US9768254B2 (en) * 2015-07-30 2017-09-19 International Business Machines Corporation Leakage-free implantation-free ETSOI transistors
KR20200069446A (ko) * 2018-12-06 2020-06-17 삼성디스플레이 주식회사 박막트랜지스터와 그것을 구비한 디스플레이 장치 및 그들의 제조방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06104439A (ja) 1992-09-18 1994-04-15 Fujitsu Ltd 薄膜トランジスタおよびその製造方法
US6683350B1 (en) * 1993-02-05 2004-01-27 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the same
JPH086025A (ja) * 1994-04-20 1996-01-12 Sharp Corp 液晶電気光学装置、それを用いた投射型表示システムおよび液晶電気光学装置の駆動方法
JPH1032337A (ja) 1996-07-12 1998-02-03 Seiko Epson Corp 薄膜トランジスタとそれを用いた半導体集積回路および液晶表示装置ならびに薄膜トランジスタの製造方法
KR100295687B1 (ko) 1999-05-25 2001-07-12 김영환 모스 트랜지스터 제조방법
GB9919536D0 (en) * 1999-08-19 1999-10-20 Koninkl Philips Electronics Nv Active matrix electroluminescent display device
US6420218B1 (en) * 2000-04-24 2002-07-16 Advanced Micro Devices, Inc. Ultra-thin-body SOI MOS transistors having recessed source and drain regions
EP1350272A1 (en) * 2000-12-21 2003-10-08 Koninklijke Philips Electronics N.V. Thin film transistors
US6870225B2 (en) * 2001-11-02 2005-03-22 International Business Machines Corporation Transistor structure with thick recessed source/drain structures and fabrication process of same
US20030227014A1 (en) * 2002-06-11 2003-12-11 Xerox Corporation. Process for forming semiconductor layer of micro-and nano-electronic devices
US6890868B2 (en) * 2002-10-17 2005-05-10 Xerox Corporation Process for depositing gelable composition that includes dissolving gelable composition in liquid with agitating to disrupt gelling

Similar Documents

Publication Publication Date Title
JP2004186393A5 (enExample)
WO2003028112A1 (fr) Dispositif de circuit integre a semi-conducteur et son procede de fabrication
JP2006313906A5 (enExample)
WO2006034189A3 (en) High-mobility bulk silicon pfet
TW200510887A (en) Thin film transistor array panel and liquid crystal display including the panel
GB2415542B (en) Thin film transistor array substrate and fabricating method thereof
KR970016712A (ko) 액정표시장치 및 그 제조방법
KR950015819A (ko) 표시용 박막반도체장치 및 그 제조방법
JP2001144301A5 (enExample)
SG99379A1 (en) Method for forming a transistor gate dielectric with high-k and low-k regions
EP2346076A3 (en) Semiconductor device including nonvolatile memory
KR102032382B1 (ko) 표시장치의 커패시터 제조 방법 및 그에 따라 제조된 커패시터를 구비하는 표시장치
CN107293256B (zh) 一种像素电路、电致发光显示面板及显示装置
SG115733A1 (en) Thin film transistor, semiconductor device, and method for manufacturing the same
WO2016101719A1 (zh) 阵列基板及其制作方法和显示装置
JP2018049919A5 (ja) 半導体装置
JP2002134756A5 (enExample)
TW200505274A (en) Electro-luminescence device including a thin film transistor and method of fabricating an electro-luminescence device
JP2010271487A5 (enExample)
TW200603233A (en) Method for manufacturing thin film transistor, electro-optical device and electronic apparatus
JP2003229578A5 (enExample)
JP2006047827A5 (enExample)
WO2015096309A1 (zh) 薄膜晶体管及其制造方法、阵列基板、显示装置
TW200631453A (en) Display panel
US20060119778A1 (en) Active matrix display device and method for manufacturing the same