JP2004096066A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2004096066A5 JP2004096066A5 JP2003060670A JP2003060670A JP2004096066A5 JP 2004096066 A5 JP2004096066 A5 JP 2004096066A5 JP 2003060670 A JP2003060670 A JP 2003060670A JP 2003060670 A JP2003060670 A JP 2003060670A JP 2004096066 A5 JP2004096066 A5 JP 2004096066A5
- Authority
- JP
- Japan
- Prior art keywords
- harmonic
- resonance
- respect
- lower electrode
- etching rate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
Images
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003060670A JP4370789B2 (ja) | 2002-07-12 | 2003-03-06 | プラズマ処理装置及び可変インピーダンス手段の校正方法 |
| US10/615,915 US7527016B2 (en) | 2002-07-12 | 2003-07-10 | Plasma processing apparatus |
| CN2007101823491A CN101160014B (zh) | 2002-07-12 | 2003-07-11 | 等离子体处理装置和可变阻抗装置的校正方法 |
| CNB031466818A CN100355038C (zh) | 2002-07-12 | 2003-07-11 | 等离子体处理装置和可变阻抗装置的校正方法 |
| TW092119056A TW200402759A (en) | 2002-07-12 | 2003-07-11 | Plasma treatment apparatus |
| KR1020030047603A KR101054558B1 (ko) | 2002-07-12 | 2003-07-12 | 플라즈마 처리 장치 및 가변 임피던스 수단의 교정 방법 |
| US11/756,097 US8251011B2 (en) | 2002-07-12 | 2007-05-31 | Plasma processing apparatus |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002204928 | 2002-07-12 | ||
| JP2003060670A JP4370789B2 (ja) | 2002-07-12 | 2003-03-06 | プラズマ処理装置及び可変インピーダンス手段の校正方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008331537A Division JP4985637B2 (ja) | 2002-07-12 | 2008-12-25 | プラズマ処理方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004096066A JP2004096066A (ja) | 2004-03-25 |
| JP2004096066A5 true JP2004096066A5 (https=) | 2006-03-23 |
| JP4370789B2 JP4370789B2 (ja) | 2009-11-25 |
Family
ID=31497586
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003060670A Expired - Fee Related JP4370789B2 (ja) | 2002-07-12 | 2003-03-06 | プラズマ処理装置及び可変インピーダンス手段の校正方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US7527016B2 (https=) |
| JP (1) | JP4370789B2 (https=) |
| CN (1) | CN100355038C (https=) |
| TW (1) | TW200402759A (https=) |
Families Citing this family (80)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8048806B2 (en) * | 2000-03-17 | 2011-11-01 | Applied Materials, Inc. | Methods to avoid unstable plasma states during a process transition |
| US20070048882A1 (en) * | 2000-03-17 | 2007-03-01 | Applied Materials, Inc. | Method to reduce plasma-induced charging damage |
| US20110104381A1 (en) * | 2004-01-15 | 2011-05-05 | Stefan Laure | Plasma Treatment of Large-Scale Components |
| JP4558365B2 (ja) * | 2004-03-26 | 2010-10-06 | 株式会社神戸製鋼所 | プラズマ処理装置及びプラズマ処理方法 |
| US7435926B2 (en) * | 2004-03-31 | 2008-10-14 | Lam Research Corporation | Methods and array for creating a mathematical model of a plasma processing system |
| KR100710923B1 (ko) | 2004-06-02 | 2007-04-23 | 동경 엘렉트론 주식회사 | 플라즈마 처리장치 및 임피던스 조정방법 |
| JP4606944B2 (ja) * | 2004-06-02 | 2011-01-05 | 東京エレクトロン株式会社 | プラズマ処理装置およびインピーダンス調整方法 |
| US20060021580A1 (en) | 2004-06-02 | 2006-02-02 | Tokyo Electron Limited | Plasma processing apparatus and impedance adjustment method |
| CN1734712A (zh) * | 2004-07-30 | 2006-02-15 | 东京毅力科创株式会社 | 等离子体处理装置以及等离子体处理方法 |
| US20060037704A1 (en) * | 2004-07-30 | 2006-02-23 | Tokyo Electron Limited | Plasma Processing apparatus and method |
| JP4676189B2 (ja) * | 2004-11-02 | 2011-04-27 | 東京エレクトロン株式会社 | 高周波給電装置及びプラズマ処理装置 |
| KR101107393B1 (ko) * | 2004-11-12 | 2012-01-19 | 오리콘 솔라 아게, 트루바흐 | 용량 결합형 rf 플라즈마 반응기 |
| JP4546303B2 (ja) * | 2005-03-24 | 2010-09-15 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US7993489B2 (en) | 2005-03-31 | 2011-08-09 | Tokyo Electron Limited | Capacitive coupling plasma processing apparatus and method for using the same |
| EP1872637B1 (de) * | 2005-04-11 | 2014-05-07 | Dr. Laure Plasmatechnologie Gmbh | Vorrichtung und verfahren zur plasmabeschichtung |
| US7780814B2 (en) * | 2005-07-08 | 2010-08-24 | Applied Materials, Inc. | Wafer pre-clean reactor cable termination for selective suppression/reflection of source and bias frequency cross products |
| CN100362619C (zh) * | 2005-08-05 | 2008-01-16 | 中微半导体设备(上海)有限公司 | 真空反应室的射频匹配耦合网络及其配置方法 |
| JP2007250967A (ja) * | 2006-03-17 | 2007-09-27 | Tokyo Electron Ltd | プラズマ処理装置および方法とフォーカスリング |
| US7611603B2 (en) | 2006-03-31 | 2009-11-03 | Tokyo Electron Limited | Plasma processing apparatus having impedance varying electrodes |
| US7758929B2 (en) * | 2006-03-31 | 2010-07-20 | Tokyo Electron Limited | Plasma processing apparatus and method |
| JP5192209B2 (ja) | 2006-10-06 | 2013-05-08 | 東京エレクトロン株式会社 | プラズマエッチング装置、プラズマエッチング方法およびコンピュータ読取可能な記憶媒体 |
| JP5491648B2 (ja) * | 2006-10-06 | 2014-05-14 | 東京エレクトロン株式会社 | プラズマエッチング装置およびプラズマエッチング方法 |
| JP2008186939A (ja) * | 2007-01-29 | 2008-08-14 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ処理方法並びに記憶媒体 |
| US20080178803A1 (en) * | 2007-01-30 | 2008-07-31 | Collins Kenneth S | Plasma reactor with ion distribution uniformity controller employing plural vhf sources |
| US7968469B2 (en) * | 2007-01-30 | 2011-06-28 | Applied Materials, Inc. | Method of processing a workpiece in a plasma reactor with variable height ground return path to control plasma ion density uniformity |
| US7879731B2 (en) * | 2007-01-30 | 2011-02-01 | Applied Materials, Inc. | Improving plasma process uniformity across a wafer by apportioning power among plural VHF sources |
| US20080179011A1 (en) * | 2007-01-30 | 2008-07-31 | Collins Kenneth S | Plasma reactor with wide process window employing plural vhf sources |
| ES2366350T3 (es) * | 2007-02-26 | 2011-10-19 | Dr. Laure Plasmatechnologie Gmbh | Dispositivo y procedimiento para el revestimiento y tratamiento superficial asistidos por plasma de componentes voluminosos. |
| JP4903610B2 (ja) * | 2007-03-27 | 2012-03-28 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP5160802B2 (ja) * | 2007-03-27 | 2013-03-13 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP5348848B2 (ja) * | 2007-03-28 | 2013-11-20 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP2009081812A (ja) * | 2007-09-27 | 2009-04-16 | Nec Electronics Corp | 信号処理装置および信号処理方法 |
| JP5165993B2 (ja) * | 2007-10-18 | 2013-03-21 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP2009187673A (ja) * | 2008-02-01 | 2009-08-20 | Nec Electronics Corp | プラズマ処理装置及び方法 |
| JP2009239012A (ja) | 2008-03-27 | 2009-10-15 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマエッチング方法 |
| US8920611B2 (en) * | 2008-07-15 | 2014-12-30 | Applied Materials, Inc. | Method for controlling radial distribution of plasma ion density and ion energy at a workpiece surface by multi-frequency RF impedance tuning |
| US9017533B2 (en) * | 2008-07-15 | 2015-04-28 | Applied Materials, Inc. | Apparatus for controlling radial distribution of plasma ion density and ion energy at a workpiece surface by multi-frequency RF impedance tuning |
| CN100595886C (zh) * | 2008-09-26 | 2010-03-24 | 中国科学院微电子研究所 | 一种消除反应离子刻蚀自偏压的方法及系统 |
| WO2010069989A2 (en) * | 2008-12-17 | 2010-06-24 | Vestas Wind Systems A/S | Method and system for testing wind turbine plants |
| US9275838B2 (en) * | 2009-09-02 | 2016-03-01 | Lam Research Corporation | Arrangements for manipulating plasma confinement within a plasma processing system and methods thereof |
| JP5566389B2 (ja) * | 2009-09-25 | 2014-08-06 | 京セラ株式会社 | 堆積膜形成装置および堆積膜形成方法 |
| US20110209995A1 (en) * | 2010-03-01 | 2011-09-01 | Applied Materials, Inc. | Physical Vapor Deposition With A Variable Capacitive Tuner and Feedback Circuit |
| JP5498217B2 (ja) * | 2010-03-24 | 2014-05-21 | 株式会社ダイヘン | 高周波測定装置、および、高周波測定装置の校正方法 |
| JP5571996B2 (ja) * | 2010-03-31 | 2014-08-13 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| JP2012060104A (ja) * | 2010-08-11 | 2012-03-22 | Toshiba Corp | 電源制御装置、プラズマ処理装置、及びプラズマ処理方法 |
| US10586686B2 (en) | 2011-11-22 | 2020-03-10 | Law Research Corporation | Peripheral RF feed and symmetric RF return for symmetric RF delivery |
| US8932429B2 (en) * | 2012-02-23 | 2015-01-13 | Lam Research Corporation | Electronic knob for tuning radial etch non-uniformity at VHF frequencies |
| US9881772B2 (en) * | 2012-03-28 | 2018-01-30 | Lam Research Corporation | Multi-radiofrequency impedance control for plasma uniformity tuning |
| KR20140059422A (ko) * | 2012-11-08 | 2014-05-16 | 엘아이지에이디피 주식회사 | 유도 결합 플라즈마 처리 장치 및 그 제어방법 |
| US9401264B2 (en) * | 2013-10-01 | 2016-07-26 | Lam Research Corporation | Control of impedance of RF delivery path |
| JP2015053384A (ja) * | 2013-09-06 | 2015-03-19 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| US10002744B2 (en) * | 2013-12-17 | 2018-06-19 | Tokyo Electron Limited | System and method for controlling plasma density |
| JP2016046357A (ja) * | 2014-08-22 | 2016-04-04 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| KR102388170B1 (ko) * | 2014-09-02 | 2022-04-19 | 가부시키가이샤 에바라 세이사꾸쇼 | 종점 검출 방법, 연마 장치 및 연마 방법 |
| JP6584329B2 (ja) * | 2016-01-19 | 2019-10-02 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| WO2018051447A1 (ja) * | 2016-09-15 | 2018-03-22 | 株式会社日立国際電気 | 整合器 |
| US10903046B2 (en) * | 2016-11-03 | 2021-01-26 | En2Core Technology, Inc. | Inductive coil structure and inductively coupled plasma generation system |
| US10541114B2 (en) * | 2016-11-03 | 2020-01-21 | En2Core Technology, Inc. | Inductive coil structure and inductively coupled plasma generation system |
| US10896806B2 (en) * | 2016-11-03 | 2021-01-19 | En2Core Technology, Inc. | Inductive coil structure and inductively coupled plasma generation system |
| US20180175819A1 (en) * | 2016-12-16 | 2018-06-21 | Lam Research Corporation | Systems and methods for providing shunt cancellation of parasitic components in a plasma reactor |
| CN107665829B (zh) | 2017-08-24 | 2019-12-17 | 长江存储科技有限责任公司 | 晶圆混合键合中提高金属引线制程安全性的方法 |
| US10269540B1 (en) * | 2018-01-25 | 2019-04-23 | Advanced Energy Industries, Inc. | Impedance matching system and method of operating the same |
| US10892142B2 (en) | 2018-03-16 | 2021-01-12 | Samsung Electronics Co., Ltd. | System for fabricating a semiconductor device |
| JP7049883B2 (ja) * | 2018-03-28 | 2022-04-07 | 東京エレクトロン株式会社 | ボロン系膜の成膜方法および成膜装置 |
| JP7085963B2 (ja) * | 2018-10-29 | 2022-06-17 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
| WO2020096723A1 (en) | 2018-11-09 | 2020-05-14 | Applied Materials, Inc. | Radio frequency filter system for a processing chamber |
| JP7154119B2 (ja) * | 2018-12-06 | 2022-10-17 | 東京エレクトロン株式会社 | 制御方法及びプラズマ処理装置 |
| US11437262B2 (en) * | 2018-12-12 | 2022-09-06 | Applied Materials, Inc | Wafer de-chucking detection and arcing prevention |
| WO2020257965A1 (en) * | 2019-06-24 | 2020-12-30 | Trumpf Huettinger (Shanghai) Co., Ltd. | Method of adjusting the output power of a power supply supplying electrical power to a plasma, plasma apparatus and power supply |
| KR102189323B1 (ko) * | 2019-07-16 | 2020-12-11 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| KR102295727B1 (ko) * | 2019-09-05 | 2021-08-31 | 한양대학교 산학협력단 | 기판 처리 장치 |
| KR102223875B1 (ko) * | 2019-10-30 | 2021-03-05 | 주식회사 뉴파워 프라즈마 | 다중 주파수를 사용하는 건식 식각 장비를 위한 고주파 전원 장치 |
| JP7664917B2 (ja) * | 2019-11-15 | 2025-04-18 | ラム リサーチ コーポレーション | 同調回路における周波数ベースのインピーダンス調整 |
| JP7413099B2 (ja) * | 2020-03-16 | 2024-01-15 | 東京エレクトロン株式会社 | 成膜方法および成膜装置 |
| CN113820531B (zh) | 2020-06-19 | 2024-07-12 | 拓荆科技股份有限公司 | 一种射频系统状态受控的半导体设备 |
| TW202226897A (zh) * | 2020-11-06 | 2022-07-01 | 日商東京威力科創股份有限公司 | 濾波器電路 |
| US11961712B2 (en) | 2021-04-26 | 2024-04-16 | Advanced Energy Industries, Inc. | Combining the determination of single and mutual, preset preserving, impedance loads with advances in single and double sensor calibration techniques in the application of single and pairwise calibration of sensors |
| KR102929923B1 (ko) | 2021-09-23 | 2026-02-24 | 삼성전자주식회사 | 플라즈마 제어 장치 및 플라즈마 처리 시스템 |
| KR102660299B1 (ko) * | 2021-12-29 | 2024-04-26 | 세메스 주식회사 | 기판 처리 장치, 고조파 제어 유닛 및 고조파 제어 방법 |
| US12573814B2 (en) | 2022-08-05 | 2026-03-10 | Satius Holding, Llc | Capacitive coupling for optical or laser diodes |
Family Cites Families (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4340461A (en) * | 1980-09-10 | 1982-07-20 | International Business Machines Corp. | Modified RIE chamber for uniform silicon etching |
| JPS58158929A (ja) | 1982-03-17 | 1983-09-21 | Kokusai Electric Co Ltd | プラズマ発生装置 |
| JPH02298024A (ja) * | 1989-05-12 | 1990-12-10 | Tadahiro Omi | リアクティブイオンエッチング装置 |
| JPH0354825A (ja) | 1989-07-21 | 1991-03-08 | Tokyo Electron Ltd | プラズマ処理装置 |
| JPH06112167A (ja) * | 1992-09-29 | 1994-04-22 | Tokyo Electron Ltd | プラズマ装置 |
| JP3251087B2 (ja) | 1993-02-16 | 2002-01-28 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US5849372A (en) * | 1993-09-17 | 1998-12-15 | Isis Innovation Limited | RF plasma reactor and methods of generating RF plasma |
| US5815047A (en) * | 1993-10-29 | 1998-09-29 | Applied Materials, Inc. | Fast transition RF impedance matching network for plasma reactor ignition |
| JP3162245B2 (ja) | 1994-04-20 | 2001-04-25 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| US5474648A (en) * | 1994-07-29 | 1995-12-12 | Lsi Logic Corporation | Uniform and repeatable plasma processing |
| US6095084A (en) * | 1996-02-02 | 2000-08-01 | Applied Materials, Inc. | High density plasma process chamber |
| US6252354B1 (en) * | 1996-11-04 | 2001-06-26 | Applied Materials, Inc. | RF tuning method for an RF plasma reactor using frequency servoing and power, voltage, current or DI/DT control |
| US6174450B1 (en) * | 1997-04-16 | 2001-01-16 | Lam Research Corporation | Methods and apparatus for controlling ion energy and plasma density in a plasma processing system |
| JP3022806B2 (ja) | 1997-05-15 | 2000-03-21 | 九州日本電気株式会社 | 半導体装置の製造装置及びその調整方法 |
| JPH10125665A (ja) | 1997-11-04 | 1998-05-15 | Tadahiro Omi | プラズマプロセス用装置 |
| US7004107B1 (en) * | 1997-12-01 | 2006-02-28 | Applied Materials Inc. | Method and apparatus for monitoring and adjusting chamber impedance |
| JP3565311B2 (ja) | 1997-12-17 | 2004-09-15 | アルプス電気株式会社 | プラズマ処理装置 |
| JP4130255B2 (ja) * | 1998-04-08 | 2008-08-06 | キヤノンアネルバ株式会社 | プラズマ処理装置 |
| US6259334B1 (en) * | 1998-12-22 | 2001-07-10 | Lam Research Corporation | Methods for controlling an RF matching network |
| JP4450883B2 (ja) | 1999-03-30 | 2010-04-14 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US6232236B1 (en) * | 1999-08-03 | 2001-05-15 | Applied Materials, Inc. | Apparatus and method for controlling plasma uniformity in a semiconductor wafer processing system |
| TW492041B (en) * | 2000-02-14 | 2002-06-21 | Tokyo Electron Ltd | Method and device for attenuating harmonics in semiconductor plasma processing systems |
| US7030335B2 (en) * | 2000-03-17 | 2006-04-18 | Applied Materials, Inc. | Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression |
| US6894245B2 (en) * | 2000-03-17 | 2005-05-17 | Applied Materials, Inc. | Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression |
| TW483037B (en) * | 2000-03-24 | 2002-04-11 | Hitachi Ltd | Semiconductor manufacturing apparatus and method of processing semiconductor wafer using plasma, and wafer voltage probe |
| WO2001073814A2 (en) * | 2000-03-28 | 2001-10-04 | Tokyo Electron Limited | Method and apparatus for controlling power delivered to a multiple segment electrode |
| JP4514911B2 (ja) * | 2000-07-19 | 2010-07-28 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| TW511158B (en) * | 2000-08-11 | 2002-11-21 | Alps Electric Co Ltd | Plasma processing apparatus and system, performance validation system thereof |
| JP3723060B2 (ja) * | 2000-08-11 | 2005-12-07 | アルプス電気株式会社 | プラズマ処理装置およびプラズマ処理装置の性能確認システム |
| US6631693B2 (en) * | 2001-01-30 | 2003-10-14 | Novellus Systems, Inc. | Absorptive filter for semiconductor processing systems |
| JP2002286235A (ja) | 2001-03-26 | 2002-10-03 | Cleanup Corp | 浴室ユニット用エアコンディショナーの配管構造 |
| JP4819244B2 (ja) | 2001-05-15 | 2011-11-24 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US6706138B2 (en) * | 2001-08-16 | 2004-03-16 | Applied Materials Inc. | Adjustable dual frequency voltage dividing plasma reactor |
| US6879870B2 (en) * | 2002-04-16 | 2005-04-12 | Steven C. Shannon | Method and apparatus for routing harmonics in a plasma to ground within a plasma enhanced semiconductor wafer processing chamber |
| US7042311B1 (en) * | 2003-10-10 | 2006-05-09 | Novellus Systems, Inc. | RF delivery configuration in a plasma processing system |
-
2003
- 2003-03-06 JP JP2003060670A patent/JP4370789B2/ja not_active Expired - Fee Related
- 2003-07-10 US US10/615,915 patent/US7527016B2/en not_active Expired - Fee Related
- 2003-07-11 CN CNB031466818A patent/CN100355038C/zh not_active Expired - Fee Related
- 2003-07-11 TW TW092119056A patent/TW200402759A/zh not_active IP Right Cessation
-
2007
- 2007-05-31 US US11/756,097 patent/US8251011B2/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2004096066A5 (https=) | ||
| JP5466216B2 (ja) | 真空プラズマプロセッサ室においてワークピースを加工する方法 | |
| JP4370789B2 (ja) | プラズマ処理装置及び可変インピーダンス手段の校正方法 | |
| CN1515018B (zh) | 等离子体处理器 | |
| JP4601179B2 (ja) | 高周波バイアスの制御を伴うプラズマ処理方法および装置 | |
| JP5289762B2 (ja) | 多重rf周波数に応答する電極を有するプラズマプロセッサ | |
| TWI299965B (https=) | ||
| CN102709145B (zh) | 等离子体处理装置 | |
| JP5679967B2 (ja) | 複合波形周波数マッチング装置 | |
| EP0806126B1 (en) | Method and apparatus for generating plasma | |
| EP0870317B1 (en) | Apparatus for controlling matching network of a vacuum plasma processor and memory for same | |
| JP2009164608A (ja) | プラズマ処理方法 | |
| JP2021515197A5 (https=) | ||
| Bjurstrom et al. | Dependence of the electromechanical coupling on the degree of orientation of c-textured thin AlN films | |
| TW201215253A (en) | Methods and apparatus for radio frequency (RF) plasma processing | |
| US6485602B2 (en) | Plasma processing apparatus | |
| JP5492070B2 (ja) | ウエハに面する電極に直流電圧を誘導するための方法およびプラズマ処理装置 | |
| WO2003083911A1 (en) | A system and method for determining the state of a film in a plasma reactor using an electrical property | |
| US7611603B2 (en) | Plasma processing apparatus having impedance varying electrodes | |
| US7780814B2 (en) | Wafer pre-clean reactor cable termination for selective suppression/reflection of source and bias frequency cross products | |
| JP4178775B2 (ja) | プラズマリアクター | |
| US6914207B2 (en) | Plasma processing method | |
| JP5254533B2 (ja) | プラズマ処理装置と方法 | |
| KR20040007351A (ko) | 플라즈마 처리 장치 및 가변 임피던스 수단의 교정 방법 | |
| JP2003249400A (ja) | プラズマ処理装置 |