JP2004095110A - 部分的な電流絞込層を備えたスピンバルブ型磁気ヘッド及びその製造方法、ならびにその電流絞込方法 - Google Patents

部分的な電流絞込層を備えたスピンバルブ型磁気ヘッド及びその製造方法、ならびにその電流絞込方法 Download PDF

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Publication number
JP2004095110A
JP2004095110A JP2002257782A JP2002257782A JP2004095110A JP 2004095110 A JP2004095110 A JP 2004095110A JP 2002257782 A JP2002257782 A JP 2002257782A JP 2002257782 A JP2002257782 A JP 2002257782A JP 2004095110 A JP2004095110 A JP 2004095110A
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Japan
Prior art keywords
layer
current
film
magnetic
conductive
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Withdrawn
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JP2002257782A
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English (en)
Japanese (ja)
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JP2004095110A5 (enExample
Inventor
Hiroyuki Hoshiya
星屋　裕之
Katsumi Hoshino
星野　勝美
Hiroko Tsuchiya
土屋　裕子
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Hitachi Ltd
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Hitachi Ltd
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Publication date
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Priority to JP2002257782A priority Critical patent/JP2004095110A/ja
Priority to CNA031226949A priority patent/CN1480923A/zh
Priority to US10/368,478 priority patent/US20040042127A1/en
Priority to EP03003201A priority patent/EP1400957A2/en
Publication of JP2004095110A publication Critical patent/JP2004095110A/ja
Publication of JP2004095110A5 publication Critical patent/JP2004095110A5/ja
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
  • Thin Magnetic Films (AREA)
JP2002257782A 2002-09-03 2002-09-03 部分的な電流絞込層を備えたスピンバルブ型磁気ヘッド及びその製造方法、ならびにその電流絞込方法 Withdrawn JP2004095110A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2002257782A JP2004095110A (ja) 2002-09-03 2002-09-03 部分的な電流絞込層を備えたスピンバルブ型磁気ヘッド及びその製造方法、ならびにその電流絞込方法
CNA031226949A CN1480923A (zh) 2002-09-03 2003-02-20 包含部分电流屏蔽层的旋转阀头，所述头的生产方法和电流屏蔽方法
US10/368,478 US20040042127A1 (en) 2002-09-03 2003-02-20 Spin-valve head containing partial current-screen-layer, product method of said head, and current-screen method
EP03003201A EP1400957A2 (en) 2002-09-03 2003-02-20 Spin-valve head containing partial current-screening-layer, production method of said head, and current-screening method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002257782A JP2004095110A (ja) 2002-09-03 2002-09-03 部分的な電流絞込層を備えたスピンバルブ型磁気ヘッド及びその製造方法、ならびにその電流絞込方法

Publications (2)

Publication Number Publication Date
JP2004095110A true JP2004095110A (ja) 2004-03-25
JP2004095110A5 JP2004095110A5 (enExample) 2005-08-18

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JP2002257782A Withdrawn JP2004095110A (ja) 2002-09-03 2002-09-03 部分的な電流絞込層を備えたスピンバルブ型磁気ヘッド及びその製造方法、ならびにその電流絞込方法

Country Status (4)

Country Link
US (1) US20040042127A1 (enExample)
EP (1) EP1400957A2 (enExample)
JP (1) JP2004095110A (enExample)
CN (1) CN1480923A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008108980A (ja) * 2006-10-26 2008-05-08 Tdk Corp 磁気抵抗効果素子の製造方法
JP2008171982A (ja) * 2007-01-11 2008-07-24 Tdk Corp 電流狭窄用の酸化物層を有する磁気抵抗効果素子およびその形成方法
JP2012119629A (ja) * 2010-12-03 2012-06-21 Toshiba Corp スピントルク発振子、その製造方法、磁気記録ヘッド、磁気ヘッドアセンブリ、磁気記録装置

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JP2004022614A (ja) * 2002-06-13 2004-01-22 Alps Electric Co Ltd 磁気検出素子及びその製造方法
US6937447B2 (en) * 2001-09-19 2005-08-30 Kabushiki Kaisha Toshiba Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory
JP2003198004A (ja) * 2001-12-27 2003-07-11 Fujitsu Ltd 磁気抵抗効果素子
WO2003083838A1 (en) * 2002-03-28 2003-10-09 Fujitsu Limited Magnetoresistance sensor and method for producing the same
JP2004103769A (ja) * 2002-09-09 2004-04-02 Fujitsu Ltd Ｃｐｐ構造磁気抵抗効果素子
JP3673796B2 (ja) * 2003-01-14 2005-07-20 Ｔｄｋ株式会社 磁気抵抗効果素子の製造方法、磁気ヘッド、ヘッドサスペンションアセンブリ及び磁気ディスク装置
JP4204385B2 (ja) * 2003-05-27 2009-01-07 Ｔｄｋ株式会社 薄膜磁気ヘッド
US7538987B2 (en) * 2003-07-03 2009-05-26 University Of Alabama CPP spin-valve element
US7227728B2 (en) * 2003-08-29 2007-06-05 Hitachi Global Storage Technologies Netherlands B.V. Method and apparatus for a current-perpendicular-to-plane Giant Magneto-Resistance sensor with embedded composite film
JP2005086112A (ja) * 2003-09-10 2005-03-31 Toshiba Corp 磁気抵抗効果素子、磁気ヘッド、ヘッドサスペンションアッセンブリ、および磁気再生装置
US7236335B2 (en) * 2003-09-30 2007-06-26 Tdk Corporation Magnetoresistive head
US7423851B2 (en) * 2003-09-30 2008-09-09 Tdk Corporation Magneto-resistive element and device being provided with magneto-resistive element having magnetic nano-contact
JP3993175B2 (ja) 2004-02-26 2007-10-17 株式会社東芝 電流狭窄型垂直通電ｇｍｒヘッドアセンブリ、磁気記録再生装置、電流狭窄型垂直通電ｇｍｒヘッドの適正センス電流方向の特定方法
US7672086B1 (en) * 2004-04-28 2010-03-02 Western Digital (Fremont), Llc Method and system for providing a magnetic element having a current confined layer
JP4822680B2 (ja) 2004-08-10 2011-11-24 株式会社東芝 磁気抵抗効果素子の製造方法
JP2006114610A (ja) * 2004-10-13 2006-04-27 Toshiba Corp 磁気抵抗効果素子とそれを用いた磁気ヘッドおよび磁気再生装置
JP4261454B2 (ja) * 2004-10-13 2009-04-30 株式会社東芝 磁気抵抗効果素子とそれを用いた磁気ヘッドおよび磁気再生装置
US7423847B2 (en) * 2005-11-03 2008-09-09 Hitachi Global Storage Technologies Netherlands B.V. Current-perpendicular-to-the-plane spin-valve (CPP-SV) sensor with current-confining apertures concentrated near the sensing edge
JP4786331B2 (ja) 2005-12-21 2011-10-05 株式会社東芝 磁気抵抗効果素子の製造方法
JP4514721B2 (ja) 2006-02-09 2010-07-28 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気抵抗効果ヘッド、磁気記録再生装置及び磁気記憶装置
JP4758812B2 (ja) * 2006-04-26 2011-08-31 株式会社日立製作所 スピン流狭窄層を備えたスピン蓄積素子及びその作製方法
JP2007299880A (ja) * 2006-04-28 2007-11-15 Toshiba Corp 磁気抵抗効果素子，および磁気抵抗効果素子の製造方法
JP4550777B2 (ja) 2006-07-07 2010-09-22 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置及び磁気メモリ
JP5044157B2 (ja) * 2006-07-11 2012-10-10 株式会社東芝 磁気抵抗効果素子，磁気ヘッド，および磁気再生装置
JP2008034689A (ja) * 2006-07-31 2008-02-14 Tdk Corp 磁気抵抗効果素子、薄膜磁気ヘッド、ヘッドジンバルアセンブリ、ヘッドアームアセンブリ、磁気ディスク装置、磁気センサおよび磁気メモリ
US7646570B2 (en) * 2006-07-31 2010-01-12 Hitachi Global Storage Technologies Netherlands B.V. CPP read sensor having constrained current paths made of lithographically-defined conductive vias with surrounding oxidized metal sublayers and method of making same
JP4764294B2 (ja) * 2006-09-08 2011-08-31 株式会社東芝 磁気抵抗効果素子、及び磁気ヘッド
JP2008085220A (ja) * 2006-09-28 2008-04-10 Toshiba Corp 磁気抵抗効果素子、磁気ヘッド、および磁気再生装置
JP2008152835A (ja) * 2006-12-15 2008-07-03 Hitachi Global Storage Technologies Netherlands Bv 磁気抵抗効果ヘッド、磁気記録再生装置及び磁気ヘッドの製造方法
JP4388093B2 (ja) 2007-03-27 2009-12-24 株式会社東芝 磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置
JP5039006B2 (ja) 2008-09-26 2012-10-03 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
JP5032430B2 (ja) * 2008-09-26 2012-09-26 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
JP5039007B2 (ja) * 2008-09-26 2012-10-03 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
JP5032429B2 (ja) * 2008-09-26 2012-09-26 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
JP2010080839A (ja) 2008-09-29 2010-04-08 Toshiba Corp 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリおよび磁気記録再生装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6937446B2 (en) * 2000-10-20 2005-08-30 Kabushiki Kaisha Toshiba Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system
US6686068B2 (en) * 2001-02-21 2004-02-03 International Business Machines Corporation Heterogeneous spacers for CPP GMR stacks
US6707649B2 (en) * 2001-03-22 2004-03-16 Alps Electric Co., Ltd. Magnetic sensing element permitting decrease in effective element size while maintaining large optical element size
JP3849460B2 (ja) * 2001-05-29 2006-11-22 ソニー株式会社 磁気抵抗効果素子、磁気抵抗効果型磁気センサ、および磁気抵抗効果型磁気ヘッド

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008108980A (ja) * 2006-10-26 2008-05-08 Tdk Corp 磁気抵抗効果素子の製造方法
JP2008171982A (ja) * 2007-01-11 2008-07-24 Tdk Corp 電流狭窄用の酸化物層を有する磁気抵抗効果素子およびその形成方法
JP2012119629A (ja) * 2010-12-03 2012-06-21 Toshiba Corp スピントルク発振子、その製造方法、磁気記録ヘッド、磁気ヘッドアセンブリ、磁気記録装置
US8929031B2 (en) 2010-12-03 2015-01-06 Kabushiki Kaisha Toshiba Spin torque oscillator, method of manufacturing the same, magnetic recording head, magnetic head assembly, and magnetic recording apparatus
US9721594B2 (en) 2010-12-03 2017-08-01 Kabushiki Kaisha Toshiba Method of manufacturing spin torque oscillator

Also Published As

Publication number Publication date
CN1480923A (zh) 2004-03-10
EP1400957A2 (en) 2004-03-24
US20040042127A1 (en) 2004-03-04

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