JP3673796B2 - 磁気抵抗効果素子の製造方法、磁気ヘッド、ヘッドサスペンションアセンブリ及び磁気ディスク装置 - Google Patents
磁気抵抗効果素子の製造方法、磁気ヘッド、ヘッドサスペンションアセンブリ及び磁気ディスク装置 Download PDFInfo
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- 230000005291 magnetic effect Effects 0.000 title claims description 165
- 238000004519 manufacturing process Methods 0.000 title claims description 99
- 239000000725 suspension Substances 0.000 title claims description 15
- 239000010410 layer Substances 0.000 claims description 640
- 230000000694 effects Effects 0.000 claims description 103
- 229910052751 metal Inorganic materials 0.000 claims description 80
- 239000002184 metal Substances 0.000 claims description 80
- 238000001312 dry etching Methods 0.000 claims description 64
- 238000000034 method Methods 0.000 claims description 55
- 239000000758 substrate Substances 0.000 claims description 38
- 239000000470 constituent Substances 0.000 claims description 36
- 239000002356 single layer Substances 0.000 claims description 36
- 239000004065 semiconductor Substances 0.000 claims description 32
- 230000004888 barrier function Effects 0.000 claims description 29
- 230000003647 oxidation Effects 0.000 claims description 28
- 238000007254 oxidation reaction Methods 0.000 claims description 28
- 238000000059 patterning Methods 0.000 claims description 28
- 238000004140 cleaning Methods 0.000 claims description 21
- 230000001590 oxidative effect Effects 0.000 claims description 20
- 229910052742 iron Inorganic materials 0.000 claims description 11
- 229910052759 nickel Inorganic materials 0.000 claims description 11
- 229910052719 titanium Inorganic materials 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 229910052804 chromium Inorganic materials 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 229910052735 hafnium Inorganic materials 0.000 claims description 10
- 229910052748 manganese Inorganic materials 0.000 claims description 10
- 229910052750 molybdenum Inorganic materials 0.000 claims description 10
- 229910052758 niobium Inorganic materials 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 229910052715 tantalum Inorganic materials 0.000 claims description 10
- 229910052720 vanadium Inorganic materials 0.000 claims description 10
- 229910052725 zinc Inorganic materials 0.000 claims description 10
- 229910052726 zirconium Inorganic materials 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 9
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 229910052762 osmium Inorganic materials 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052741 iridium Inorganic materials 0.000 claims description 4
- 229910052702 rhenium Inorganic materials 0.000 claims description 4
- 229910052703 rhodium Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 238000001514 detection method Methods 0.000 claims description 3
- 230000005389 magnetism Effects 0.000 claims 1
- 230000006866 deterioration Effects 0.000 description 111
- 239000010408 film Substances 0.000 description 107
- 238000000137 annealing Methods 0.000 description 46
- 230000008569 process Effects 0.000 description 41
- 239000000463 material Substances 0.000 description 37
- 238000000992 sputter etching Methods 0.000 description 34
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 22
- 239000001301 oxygen Substances 0.000 description 22
- 229910052760 oxygen Inorganic materials 0.000 description 22
- 230000015572 biosynthetic process Effects 0.000 description 21
- 238000005530 etching Methods 0.000 description 14
- 238000010884 ion-beam technique Methods 0.000 description 12
- 230000005381 magnetic domain Effects 0.000 description 12
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 11
- 230000005294 ferromagnetic effect Effects 0.000 description 11
- 230000001939 inductive effect Effects 0.000 description 11
- 230000001681 protective effect Effects 0.000 description 11
- 239000011651 chromium Substances 0.000 description 10
- 238000005259 measurement Methods 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 239000002131 composite material Substances 0.000 description 5
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical group 0.000 description 5
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 4
- 238000003801 milling Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229920001187 thermosetting polymer Polymers 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000005290 antiferromagnetic effect Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910019222 CoCrPt Inorganic materials 0.000 description 2
- 229910003321 CoFe Inorganic materials 0.000 description 2
- 229910018979 CoPt Inorganic materials 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 229910001260 Pt alloy Inorganic materials 0.000 description 2
- 229910008599 TiW Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- -1 moisture Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910002546 FeCo Inorganic materials 0.000 description 1
- 229910002545 FeCoNi Inorganic materials 0.000 description 1
- 229910015136 FeMn Inorganic materials 0.000 description 1
- 229910003289 NiMn Inorganic materials 0.000 description 1
- 229910019041 PtMn Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- DTJAVSFDAWLDHQ-UHFFFAOYSA-N [Cr].[Co].[Pt] Chemical compound [Cr].[Co].[Pt] DTJAVSFDAWLDHQ-UHFFFAOYSA-N 0.000 description 1
- GUBSQCSIIDQXLB-UHFFFAOYSA-N cobalt platinum Chemical compound [Co].[Pt].[Pt].[Pt] GUBSQCSIIDQXLB-UHFFFAOYSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3909—Arrangements using a magnetic tunnel junction
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
- Y10T29/49032—Fabricating head structure or component thereof
- Y10T29/49036—Fabricating head structure or component thereof including measuring or testing
- Y10T29/49039—Fabricating head structure or component thereof including measuring or testing with dual gap materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
- Y10T29/49032—Fabricating head structure or component thereof
- Y10T29/49036—Fabricating head structure or component thereof including measuring or testing
- Y10T29/49043—Depositing magnetic layer or coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
- Y10T29/49032—Fabricating head structure or component thereof
- Y10T29/49036—Fabricating head structure or component thereof including measuring or testing
- Y10T29/49043—Depositing magnetic layer or coating
- Y10T29/49044—Plural magnetic deposition layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
- Y10T29/49032—Fabricating head structure or component thereof
- Y10T29/49036—Fabricating head structure or component thereof including measuring or testing
- Y10T29/49043—Depositing magnetic layer or coating
- Y10T29/49046—Depositing magnetic layer or coating with etching or machining of magnetic material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
- Y10T29/49032—Fabricating head structure or component thereof
- Y10T29/49048—Machining magnetic material [e.g., grinding, etching, polishing]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
- Y10T29/49032—Fabricating head structure or component thereof
- Y10T29/49048—Machining magnetic material [e.g., grinding, etching, polishing]
- Y10T29/49052—Machining magnetic material [e.g., grinding, etching, polishing] by etching
Description
2 TMR素子
3 誘導型磁気変換素子
21 下部電極(下部磁気シールド層)
22,23 下部金属層
24 ピン層
25 ピンド層
26 トンネルバリア層
27 フリー層
28 上部金属層
29 上部金属層
30,34 絶縁層
31 上部電極(上部磁気シールド層)
32 磁区制御層
33,35 絶縁層
33’,35’ 劣化低減層
Claims (18)
- 基体上に磁気抵抗効果層を構成する構成層を成膜する段階と、
前記構成層のうちの1層以上をパターニングするパターニング段階と、
前記パターニングにより前記構成層のうちの前記1層以上が除去された領域に、酸化し得る層を成膜する段階と、
前記酸化し得る層を酸化させる段階と、
前記酸化し得る層の上に、絶縁層を成膜する段階と、
前記絶縁層を成膜する前記段階の直前に、表面清浄化のためのドライエッチングを行う段階と、
を備えたことを特徴とする磁気抵抗効果素子の製造方法。 - 前記酸化させる段階は、当該基体を大気中に置いて前記酸化し得る層を自然酸化させる段階を含むことを特徴とする請求項1記載の磁気抵抗効果素子の製造方法。
- 前記ドライエッチングを行う段階は、前記絶縁層を成膜する前記段階が行われるのと同じ真空装置内でドライエッチングを行う段階を含むことを特徴とする請求項1又は2記載の磁気抵抗効果素子の製造方法。
- 前記ドライエッチングを行う段階の後及び前記絶縁層を成膜する前記段階の後に、前記酸化し得る層が実質的に残ることを特徴とする請求項1乃至3のいずれかに記載の磁気抵抗効果素子の製造方法。
- 前記酸化し得る層が、前記ドライエッチングを行う段階によって、実質的に除去されることを特徴とする請求項1乃至3のいずれかに記載の磁気抵抗効果素子の製造方法。
- 基体上に磁気抵抗効果層を構成する構成層を成膜する段階と、
前記構成層のうちの1層以上をパターニングするパターニング段階と、
前記パターニングにより前記構成層のうちの前記1層以上が除去された領域に、酸化し得る層を成膜する段階と、
前記酸化し得る層を酸化させる段階と、
前記酸化し得る層の上に、絶縁層を成膜する段階と、
前記絶縁層を成膜する前記段階の前に、前記酸化し得る層を除去する段階と、
を備えたことを特徴とする磁気抵抗効果素子の製造方法。 - 前記酸化させる段階は、当該基体を大気中に置いて前記酸化し得る層を自然酸化させる段階を含むことを特徴とする請求項6記載の磁気抵抗効果素子の製造方法。
- 基体上に磁気抵抗効果層を構成する構成層を成膜する段階と、
前記構成層のうちの1層以上をパターニングするパターニング段階と、
前記パターニングにより前記構成層のうちの前記1層以上が除去された領域に、金属及び/又は半導体の単層膜又は複層膜からなる層を成膜する段階と、
前記金属及び/又は半導体の単層膜又は複層膜からなる層を除去する除去段階と、
前記除去段階の後に、前記パターニングにより前記構成層のうちの前記1層以上が除去された領域に、絶縁層を成膜する段階と、
を備えたことを特徴とする磁気抵抗効果素子の製造方法。 - 前記絶縁層を成膜する前記段階の直前に、表面清浄化のためのドライエッチングを行う段階を、備え、
前記ドライエッチングを行う段階が、前記除去段階を兼ねることを特徴とする請求項8記載の磁気抵抗効果素子の製造方法。 - 前記ドライエッチングを行う段階は、前記絶縁層を成膜する前記段階が行われるのと同じ真空装置内でドライエッチングを行う段階を含むことを特徴とする請求項9記載の磁気抵抗効果素子の製造方法。
- 前記金属及び/又は半導体の単層膜又は複層膜からなる層は、Al、Si、Ti、V、Cr、Mn、Fe、Ni、Co、Cu、Zn、Zr、Nb、Mo、Hf、Ta、W、Ru、Rh、Pd、Ag、Re、Os、Ir、Pt及びAuからなる群より選ばれた1種以上から構成される単層膜又は複層膜であることを特徴とする請求項8乃至10のいずれかに記載の磁気抵抗効果素子の製造方法。
- 前記金属及び/又は半導体の単層膜又は複層膜からなる層は、酸化し得る層であることを特徴とする請求項8乃至10のいずれかに記載の磁気抵抗効果素子の製造方法。
- 前記酸化し得る層は、Al、Si、Ti、V、Cr、Mn、Fe、Ni、Co、Cu、Zn、Zr、Nb、Mo、Hf、Ta及びWからなる群より選ばれた1種以上から構成される単層膜又は複層膜であることを特徴とする請求項1乃至7及び12のいずれかに記載の磁気抵抗効果素子の製造方法。
- 前記磁気抵抗効果素子は、磁気抵抗効果層における磁気検出に有効に関与する有効領域が、前記磁気抵抗効果層において膜面と略々垂直な方向に電流が流れる領域である磁気抵抗効果素子であることを特徴とする請求項1乃至13のいずれかに記載の磁気抵抗効果素子の製造方法。
- 前記磁気抵抗効果層は、前記フリー層の一方の面側に形成されたトンネルバリア層と、該トンネルバリア層の前記フリー層とは反対の側に形成されたピンド層と、前記ピンド層の前記トンネルバリア層とは反対の側に形成されたピン層と、を含むことを特徴とする請求項1乃至14のいずれかに記載の磁気抵抗効果素子の製造方法。
- 基体と、該基体により支持された磁気抵抗効果素子とを備え、前記磁気抵抗効果素子が、請求項1乃至15のいずれかに記載の製造方法により製造された磁気抵抗効果素子であることを特徴とする磁気ヘッド。
- 磁気ヘッドと、該磁気ヘッドが先端部付近に搭載され前記磁気ヘッドを支持するサスペンションと、を備え、前記磁気ヘッドが請求項16記載の磁気ヘッドであることを特徴とするヘッドサスペンションアセンブリ。
- 請求項17記載のヘッドサスペンションアセンブリと、該アセンブリを支持するアーム部と、該アーム部を移動させて磁気ヘッドの位置決めを行うアクチュエータと、を備えたことを特徴とする磁気ディスク装置。
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JP2003415810A JP3673796B2 (ja) | 2003-01-14 | 2003-12-12 | 磁気抵抗効果素子の製造方法、磁気ヘッド、ヘッドサスペンションアセンブリ及び磁気ディスク装置 |
US10/747,162 US20040150922A1 (en) | 2003-01-14 | 2003-12-30 | Magneto-resistive device and method of manufacturing same, magnetic head, head suspension assembly and magnetic disk apparatus |
US11/797,603 US7784171B2 (en) | 2003-01-14 | 2007-05-04 | Method of manufacturing a magneto-resistive device |
US12/232,785 US8240026B2 (en) | 2003-01-14 | 2008-09-24 | Method of manufacturing a magneto-resistive device |
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JP2004241763A (ja) | 2004-08-26 |
US7784171B2 (en) | 2010-08-31 |
US8240026B2 (en) | 2012-08-14 |
US20070206334A1 (en) | 2007-09-06 |
US20040150922A1 (en) | 2004-08-05 |
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