US20040150922A1 - Magneto-resistive device and method of manufacturing same, magnetic head, head suspension assembly and magnetic disk apparatus - Google Patents

Magneto-resistive device and method of manufacturing same, magnetic head, head suspension assembly and magnetic disk apparatus Download PDF

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Publication number
US20040150922A1
US20040150922A1 US10/747,162 US74716203A US2004150922A1 US 20040150922 A1 US20040150922 A1 US 20040150922A1 US 74716203 A US74716203 A US 74716203A US 2004150922 A1 US2004150922 A1 US 2004150922A1
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United States
Prior art keywords
layer
magneto
resistive
manufacturing
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/747,162
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English (en)
Inventor
Takeo Kagami
Tetsuya Kuwashima
Norio Takahashi
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TDK Corp
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TDK Corp
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Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Assigned to TDK CORPORATION reassignment TDK CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KAGAMI, TAKEO, KUWASHIMA, TETSUYA, TAKAHASHI, NORIO
Publication of US20040150922A1 publication Critical patent/US20040150922A1/en
Priority to US11/797,603 priority Critical patent/US7784171B2/en
Priority to US12/232,785 priority patent/US8240026B2/en
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3909—Arrangements using a magnetic tunnel junction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
    • Y10T29/49032—Fabricating head structure or component thereof
    • Y10T29/49036—Fabricating head structure or component thereof including measuring or testing
    • Y10T29/49039—Fabricating head structure or component thereof including measuring or testing with dual gap materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
    • Y10T29/49032—Fabricating head structure or component thereof
    • Y10T29/49036—Fabricating head structure or component thereof including measuring or testing
    • Y10T29/49043—Depositing magnetic layer or coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
    • Y10T29/49032—Fabricating head structure or component thereof
    • Y10T29/49036—Fabricating head structure or component thereof including measuring or testing
    • Y10T29/49043—Depositing magnetic layer or coating
    • Y10T29/49044—Plural magnetic deposition layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
    • Y10T29/49032—Fabricating head structure or component thereof
    • Y10T29/49036—Fabricating head structure or component thereof including measuring or testing
    • Y10T29/49043—Depositing magnetic layer or coating
    • Y10T29/49046—Depositing magnetic layer or coating with etching or machining of magnetic material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
    • Y10T29/49032—Fabricating head structure or component thereof
    • Y10T29/49048—Machining magnetic material [e.g., grinding, etching, polishing]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
    • Y10T29/49032—Fabricating head structure or component thereof
    • Y10T29/49048—Machining magnetic material [e.g., grinding, etching, polishing]
    • Y10T29/49052—Machining magnetic material [e.g., grinding, etching, polishing] by etching
US10/747,162 2003-01-14 2003-12-30 Magneto-resistive device and method of manufacturing same, magnetic head, head suspension assembly and magnetic disk apparatus Abandoned US20040150922A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US11/797,603 US7784171B2 (en) 2003-01-14 2007-05-04 Method of manufacturing a magneto-resistive device
US12/232,785 US8240026B2 (en) 2003-01-14 2008-09-24 Method of manufacturing a magneto-resistive device

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2003006319 2003-01-14
JP2003-006319 2003-01-14
JP2003415810A JP3673796B2 (ja) 2003-01-14 2003-12-12 磁気抵抗効果素子の製造方法、磁気ヘッド、ヘッドサスペンションアセンブリ及び磁気ディスク装置
JP2003-415810 2003-12-12

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/797,603 Division US7784171B2 (en) 2003-01-14 2007-05-04 Method of manufacturing a magneto-resistive device

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Publication Number Publication Date
US20040150922A1 true US20040150922A1 (en) 2004-08-05

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Application Number Title Priority Date Filing Date
US10/747,162 Abandoned US20040150922A1 (en) 2003-01-14 2003-12-30 Magneto-resistive device and method of manufacturing same, magnetic head, head suspension assembly and magnetic disk apparatus
US11/797,603 Expired - Lifetime US7784171B2 (en) 2003-01-14 2007-05-04 Method of manufacturing a magneto-resistive device
US12/232,785 Active 2024-12-18 US8240026B2 (en) 2003-01-14 2008-09-24 Method of manufacturing a magneto-resistive device

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Application Number Title Priority Date Filing Date
US11/797,603 Expired - Lifetime US7784171B2 (en) 2003-01-14 2007-05-04 Method of manufacturing a magneto-resistive device
US12/232,785 Active 2024-12-18 US8240026B2 (en) 2003-01-14 2008-09-24 Method of manufacturing a magneto-resistive device

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JP (1) JP3673796B2 (ja)

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050276099A1 (en) * 2004-06-15 2005-12-15 Headway Technologies, Inc. Novel capping structure for enhancing dR/R of the MTJ device
US20070030592A1 (en) * 2005-08-05 2007-02-08 Hitachi Global Storage Technologies Netherlands B.V. Magnetic head, fabrication process of magnetic head, and magnetic disk storage apparatus mounting magnetic head
US20070206333A1 (en) * 2006-02-14 2007-09-06 Hitachi Global Storage Technologies Netherlands B.V. Magnetoresistive head and a manufacturing method thereof
US20080206895A1 (en) * 2004-09-14 2008-08-28 Kabushiki Kaisha Toshiba Magnetic random access memory and method of manufacturing the same
US20080212238A1 (en) * 2007-01-17 2008-09-04 Katsuro Watanabe Magnetoresistive head with larger longitudinal biasing
US20090046394A1 (en) * 2007-01-29 2009-02-19 Hitachi Global Storage Technologies Netherlands B.V. Sensor shape and etching process of CPP magnetic head for reduce property degradation
US20090067099A1 (en) * 2007-09-11 2009-03-12 Tdk Corporation Magnetoresistive element including layered film touching periphery of spacer layer
US20090085058A1 (en) * 2007-09-28 2009-04-02 Freescale Semiconductor, Inc. Electronic device including a magneto-resistive memory device and a process for forming the electronic device
US7580228B1 (en) * 2004-05-29 2009-08-25 Lauer Mark A Current perpendicular to plane sensor with non-rectangular sense layer stack
US7897201B2 (en) * 2006-02-09 2011-03-01 Kabushiki Kaisha Toshiba Method for manufacturing magnetoresistance effect element
US8031443B2 (en) 2007-03-27 2011-10-04 Kabushiki Kaisha Toshiba Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and method for manufacturing a magneto-resistance effect element
US8048492B2 (en) 2005-12-21 2011-11-01 Kabushiki Kaisha Toshiba Magnetoresistive effect element and manufacturing method thereof
US8111489B2 (en) 2006-07-07 2012-02-07 Kabushiki Kaisha Toshiba Magneto-resistance effect element
US8228643B2 (en) 2008-09-26 2012-07-24 Kabushiki Kaisha Toshiba Method for manufacturing a magneto-resistance effect element and magnetic recording and reproducing apparatus
US8274765B2 (en) 2008-09-29 2012-09-25 Kabushiki Kaisha Toshiba Method of manufacturing magnetoresistive element, magnetoresistive element, magnetic head assembly and magnetic recording apparatus
US8274766B2 (en) 2006-04-28 2012-09-25 Kabushiki Kaisha Toshiba Magnetic recording element including a thin film layer with changeable magnetization direction
US8315020B2 (en) 2008-09-26 2012-11-20 Kabushiki Kaisha Toshiba Method for manufacturing a magneto-resistance effect element and magnetic recording and reproducing apparatus
US8518717B2 (en) 2010-12-27 2013-08-27 HGST Netherlands B.V. Method for junction isolation to reduce junction damage for a TMR sensor
US9099123B1 (en) * 2014-02-11 2015-08-04 HGST Netherlands B.V. Magnetic sensor having optimal free layer back edge shape and extended pinned layer
US9166155B2 (en) 2012-08-14 2015-10-20 Everspin Technologies, Inc. Method of manufacturing a magnetoresistive-based device
US9793470B2 (en) 2015-02-04 2017-10-17 Everspin Technologies, Inc. Magnetoresistive stack/structure and method of manufacturing same
US10461251B2 (en) 2017-08-23 2019-10-29 Everspin Technologies, Inc. Method of manufacturing integrated circuit using encapsulation during an etch process
US10483460B2 (en) 2015-10-31 2019-11-19 Everspin Technologies, Inc. Method of manufacturing a magnetoresistive stack/ structure using plurality of encapsulation layers

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JP4659518B2 (ja) * 2005-05-24 2011-03-30 シャープ株式会社 磁気抵抗効果素子及びその製造方法
FR2927469B1 (fr) * 2008-02-13 2010-04-16 Commissariat Energie Atomique Procede pour realiser un nanocontact d'une vanne de spin entrant dans la constitution d'un oscillateur radio freqence.
US8023230B2 (en) * 2008-10-27 2011-09-20 Tdk Corporation Magnetoresistive element including a pair of ferromagnetic layers coupled to a pair of shield layers
MY157471A (en) * 2010-01-06 2016-06-15 Shinetsu Chemical Co Rare earth magnet holding jig, cutting machine and cutting method
MY155758A (en) * 2010-01-06 2015-11-30 Shinetsu Chemical Co Rare earth magnet holding jig and cutting machine
US8570690B2 (en) 2011-06-20 2013-10-29 HGST Netherlands B.V. Magnetic sensor having a hard bias seed structure
TWI420127B (zh) * 2011-07-05 2013-12-21 Voltafield Technology Corp 穿隧式磁阻感測器
US8462469B1 (en) * 2012-05-04 2013-06-11 Tdk Corporation Magneto-resistive effect element having FePt bias magnetic field application layer with Pt seed layer and MgO insulation layer
US8861317B1 (en) 2013-04-02 2014-10-14 Western Digital (Fremont), Llc Heat assisted magnetic recording transducer having protective pads
US9343098B1 (en) 2013-08-23 2016-05-17 Western Digital (Fremont), Llc Method for providing a heat assisted magnetic recording transducer having protective pads
JP6139444B2 (ja) * 2014-03-18 2017-05-31 株式会社東芝 磁気抵抗効果素子、磁気抵抗効果素子の製造方法及び磁気メモリ
US9747933B1 (en) * 2016-02-16 2017-08-29 Tdk Corporation Magneto-resistive effect element having side shield integrated with upper shield
CA3174558A1 (en) 2020-03-09 2021-09-16 Royal Caribbean Cruises Ltd. Contact tracing systems and methods for tracking of shipboard pathogen transmission

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US20020030947A1 (en) * 2000-09-13 2002-03-14 Seagate Technology Llc MR structures for high areal density reader by using side shields
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US6542342B1 (en) * 1998-11-30 2003-04-01 Nec Corporation Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer
US6353318B1 (en) * 2000-03-10 2002-03-05 Read-Rite Corporation Magnetoresistive sensor having hard biased current perpendicular to the plane sensor
US20020030947A1 (en) * 2000-09-13 2002-03-14 Seagate Technology Llc MR structures for high areal density reader by using side shields
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Cited By (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7580228B1 (en) * 2004-05-29 2009-08-25 Lauer Mark A Current perpendicular to plane sensor with non-rectangular sense layer stack
US7449345B2 (en) * 2004-06-15 2008-11-11 Headway Technologies, Inc. Capping structure for enhancing dR/R of the MTJ device
US20050276099A1 (en) * 2004-06-15 2005-12-15 Headway Technologies, Inc. Novel capping structure for enhancing dR/R of the MTJ device
US7767469B2 (en) * 2004-09-14 2010-08-03 Kabushiki Kaisha Toshiba Magnetic random access memory and method of manufacturing the same
US20080206895A1 (en) * 2004-09-14 2008-08-28 Kabushiki Kaisha Toshiba Magnetic random access memory and method of manufacturing the same
US7446981B2 (en) 2005-08-05 2008-11-04 Hitachi Global Storage Technologies Netherlands B.V. Magnetic head, fabrication process of magnetic head, and magnetic disk storage apparatus mounting magnetic head
US20070030592A1 (en) * 2005-08-05 2007-02-08 Hitachi Global Storage Technologies Netherlands B.V. Magnetic head, fabrication process of magnetic head, and magnetic disk storage apparatus mounting magnetic head
US8048492B2 (en) 2005-12-21 2011-11-01 Kabushiki Kaisha Toshiba Magnetoresistive effect element and manufacturing method thereof
US7897201B2 (en) * 2006-02-09 2011-03-01 Kabushiki Kaisha Toshiba Method for manufacturing magnetoresistance effect element
US7859799B2 (en) 2006-02-14 2010-12-28 Hitachi Global Storage Technologies Netherlands B.V. Magnetoresistive head and a manufacturing method thereof
EP1818915A3 (en) * 2006-02-14 2008-02-06 Hitachi Global Storage Technologies Netherlands B.V. A magnetoresistive head and a manufacturing method thereof
US20070206333A1 (en) * 2006-02-14 2007-09-06 Hitachi Global Storage Technologies Netherlands B.V. Magnetoresistive head and a manufacturing method thereof
US8274766B2 (en) 2006-04-28 2012-09-25 Kabushiki Kaisha Toshiba Magnetic recording element including a thin film layer with changeable magnetization direction
US8111489B2 (en) 2006-07-07 2012-02-07 Kabushiki Kaisha Toshiba Magneto-resistance effect element
US20080212238A1 (en) * 2007-01-17 2008-09-04 Katsuro Watanabe Magnetoresistive head with larger longitudinal biasing
US8355224B2 (en) 2007-01-29 2013-01-15 Hitachi Global Storage Technologies Netherlands B.V. Sensor shape of a CPP magnetic head for improving the MR ratio
US20090046394A1 (en) * 2007-01-29 2009-02-19 Hitachi Global Storage Technologies Netherlands B.V. Sensor shape and etching process of CPP magnetic head for reduce property degradation
US8031443B2 (en) 2007-03-27 2011-10-04 Kabushiki Kaisha Toshiba Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and method for manufacturing a magneto-resistance effect element
US7944650B2 (en) * 2007-09-11 2011-05-17 Tdk Corporation Magnetoresistive element including layered film touching periphery of spacer layer
US20090067099A1 (en) * 2007-09-11 2009-03-12 Tdk Corporation Magnetoresistive element including layered film touching periphery of spacer layer
US20090085058A1 (en) * 2007-09-28 2009-04-02 Freescale Semiconductor, Inc. Electronic device including a magneto-resistive memory device and a process for forming the electronic device
US8119424B2 (en) * 2007-09-28 2012-02-21 Everspin Technologies, Inc. Electronic device including a magneto-resistive memory device and a process for forming the electronic device
US8236578B2 (en) 2007-09-28 2012-08-07 Everspin Technologies, Inc. Electronic device including a magneto-resistive memory device and a process for forming the electronic device
US8228643B2 (en) 2008-09-26 2012-07-24 Kabushiki Kaisha Toshiba Method for manufacturing a magneto-resistance effect element and magnetic recording and reproducing apparatus
US8315020B2 (en) 2008-09-26 2012-11-20 Kabushiki Kaisha Toshiba Method for manufacturing a magneto-resistance effect element and magnetic recording and reproducing apparatus
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US20090038143A1 (en) 2009-02-12
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JP2004241763A (ja) 2004-08-26
JP3673796B2 (ja) 2005-07-20

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