CN1480923A - 包含部分电流屏蔽层的旋转阀头，所述头的生产方法和电流屏蔽方法 - Google Patents

包含部分电流屏蔽层的旋转阀头，所述头的生产方法和电流屏蔽方法 Download PDF

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Publication number
CN1480923A
CN1480923A CNA031226949A CN03122694A CN1480923A CN 1480923 A CN1480923 A CN 1480923A CN A031226949 A CNA031226949 A CN A031226949A CN 03122694 A CN03122694 A CN 03122694A CN 1480923 A CN1480923 A CN 1480923A
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CN
China
Prior art keywords
layer
magnetic
film
shielding layer
current shielding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA031226949A
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English (en)
Chinese (zh)
Inventor
֮
星屋裕之
星野胜美
土屋裕子
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HGST Japan Ltd
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Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of CN1480923A publication Critical patent/CN1480923A/zh
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
  • Thin Magnetic Films (AREA)
CNA031226949A 2002-09-03 2003-02-20 包含部分电流屏蔽层的旋转阀头，所述头的生产方法和电流屏蔽方法 Pending CN1480923A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002257782A JP2004095110A (ja) 2002-09-03 2002-09-03 部分的な電流絞込層を備えたスピンバルブ型磁気ヘッド及びその製造方法、ならびにその電流絞込方法
JP257782/2002 2002-09-03

Publications (1)

Publication Number Publication Date
CN1480923A true CN1480923A (zh) 2004-03-10

Family

ID=31944421

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA031226949A Pending CN1480923A (zh) 2002-09-03 2003-02-20 包含部分电流屏蔽层的旋转阀头，所述头的生产方法和电流屏蔽方法

Country Status (4)

Country Link
US (1) US20040042127A1 (enExample)
EP (1) EP1400957A2 (enExample)
JP (1) JP2004095110A (enExample)
CN (1) CN1480923A (enExample)

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US6937447B2 (en) * 2001-09-19 2005-08-30 Kabushiki Kaisha Toshiba Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory
JP2003198004A (ja) * 2001-12-27 2003-07-11 Fujitsu Ltd 磁気抵抗効果素子
WO2003083838A1 (en) * 2002-03-28 2003-10-09 Fujitsu Limited Magnetoresistance sensor and method for producing the same
JP2004103769A (ja) * 2002-09-09 2004-04-02 Fujitsu Ltd Ｃｐｐ構造磁気抵抗効果素子
JP3673796B2 (ja) * 2003-01-14 2005-07-20 Ｔｄｋ株式会社 磁気抵抗効果素子の製造方法、磁気ヘッド、ヘッドサスペンションアセンブリ及び磁気ディスク装置
JP4204385B2 (ja) * 2003-05-27 2009-01-07 Ｔｄｋ株式会社 薄膜磁気ヘッド
US7538987B2 (en) * 2003-07-03 2009-05-26 University Of Alabama CPP spin-valve element
US7227728B2 (en) * 2003-08-29 2007-06-05 Hitachi Global Storage Technologies Netherlands B.V. Method and apparatus for a current-perpendicular-to-plane Giant Magneto-Resistance sensor with embedded composite film
JP2005086112A (ja) * 2003-09-10 2005-03-31 Toshiba Corp 磁気抵抗効果素子、磁気ヘッド、ヘッドサスペンションアッセンブリ、および磁気再生装置
US7236335B2 (en) * 2003-09-30 2007-06-26 Tdk Corporation Magnetoresistive head
US7423851B2 (en) * 2003-09-30 2008-09-09 Tdk Corporation Magneto-resistive element and device being provided with magneto-resistive element having magnetic nano-contact
JP3993175B2 (ja) 2004-02-26 2007-10-17 株式会社東芝 電流狭窄型垂直通電ｇｍｒヘッドアセンブリ、磁気記録再生装置、電流狭窄型垂直通電ｇｍｒヘッドの適正センス電流方向の特定方法
US7672086B1 (en) * 2004-04-28 2010-03-02 Western Digital (Fremont), Llc Method and system for providing a magnetic element having a current confined layer
JP4822680B2 (ja) 2004-08-10 2011-11-24 株式会社東芝 磁気抵抗効果素子の製造方法
JP2006114610A (ja) * 2004-10-13 2006-04-27 Toshiba Corp 磁気抵抗効果素子とそれを用いた磁気ヘッドおよび磁気再生装置
JP4261454B2 (ja) * 2004-10-13 2009-04-30 株式会社東芝 磁気抵抗効果素子とそれを用いた磁気ヘッドおよび磁気再生装置
US7423847B2 (en) * 2005-11-03 2008-09-09 Hitachi Global Storage Technologies Netherlands B.V. Current-perpendicular-to-the-plane spin-valve (CPP-SV) sensor with current-confining apertures concentrated near the sensing edge
JP4786331B2 (ja) 2005-12-21 2011-10-05 株式会社東芝 磁気抵抗効果素子の製造方法
JP4514721B2 (ja) 2006-02-09 2010-07-28 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気抵抗効果ヘッド、磁気記録再生装置及び磁気記憶装置
JP4758812B2 (ja) * 2006-04-26 2011-08-31 株式会社日立製作所 スピン流狭窄層を備えたスピン蓄積素子及びその作製方法
JP2007299880A (ja) * 2006-04-28 2007-11-15 Toshiba Corp 磁気抵抗効果素子，および磁気抵抗効果素子の製造方法
JP4550777B2 (ja) 2006-07-07 2010-09-22 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置及び磁気メモリ
JP5044157B2 (ja) * 2006-07-11 2012-10-10 株式会社東芝 磁気抵抗効果素子，磁気ヘッド，および磁気再生装置
JP2008034689A (ja) * 2006-07-31 2008-02-14 Tdk Corp 磁気抵抗効果素子、薄膜磁気ヘッド、ヘッドジンバルアセンブリ、ヘッドアームアセンブリ、磁気ディスク装置、磁気センサおよび磁気メモリ
US7646570B2 (en) * 2006-07-31 2010-01-12 Hitachi Global Storage Technologies Netherlands B.V. CPP read sensor having constrained current paths made of lithographically-defined conductive vias with surrounding oxidized metal sublayers and method of making same
JP4764294B2 (ja) * 2006-09-08 2011-08-31 株式会社東芝 磁気抵抗効果素子、及び磁気ヘッド
JP2008085220A (ja) * 2006-09-28 2008-04-10 Toshiba Corp 磁気抵抗効果素子、磁気ヘッド、および磁気再生装置
JP4539876B2 (ja) * 2006-10-26 2010-09-08 Ｔｄｋ株式会社 磁気抵抗効果素子の製造方法
JP2008152835A (ja) * 2006-12-15 2008-07-03 Hitachi Global Storage Technologies Netherlands Bv 磁気抵抗効果ヘッド、磁気記録再生装置及び磁気ヘッドの製造方法
JP4962010B2 (ja) * 2007-01-11 2012-06-27 Ｔｄｋ株式会社 磁気抵抗効果素子の形成方法
JP4388093B2 (ja) 2007-03-27 2009-12-24 株式会社東芝 磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置
JP5039006B2 (ja) 2008-09-26 2012-10-03 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
JP5032430B2 (ja) * 2008-09-26 2012-09-26 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
JP5039007B2 (ja) * 2008-09-26 2012-10-03 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
JP5032429B2 (ja) * 2008-09-26 2012-09-26 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
JP2010080839A (ja) 2008-09-29 2010-04-08 Toshiba Corp 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリおよび磁気記録再生装置
JP5135419B2 (ja) 2010-12-03 2013-02-06 株式会社東芝 スピントルク発振子、その製造方法、磁気記録ヘッド、磁気ヘッドアセンブリ、磁気記録装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6937446B2 (en) * 2000-10-20 2005-08-30 Kabushiki Kaisha Toshiba Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system
US6686068B2 (en) * 2001-02-21 2004-02-03 International Business Machines Corporation Heterogeneous spacers for CPP GMR stacks
US6707649B2 (en) * 2001-03-22 2004-03-16 Alps Electric Co., Ltd. Magnetic sensing element permitting decrease in effective element size while maintaining large optical element size
JP3849460B2 (ja) * 2001-05-29 2006-11-22 ソニー株式会社 磁気抵抗効果素子、磁気抵抗効果型磁気センサ、および磁気抵抗効果型磁気ヘッド

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Publication number Publication date
EP1400957A2 (en) 2004-03-24
JP2004095110A (ja) 2004-03-25
US20040042127A1 (en) 2004-03-04

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C06 Publication
PB01 Publication
ASS Succession or assignment of patent right

Owner name: HITACHI GLOBAL STORAGE TECHNOLOGIES JAPAN LTD.

Free format text: FORMER OWNER: HITACHI CO., LTD.

Effective date: 20050422

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20050422

Address after: Kanagawa, Japan

Applicant after: Hitachi Global Scinece Technology Jappan Co., Ltd.

Address before: Tokyo, Japan

Applicant before: Hitachi Ltd.

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C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication