JP2004087908A - 窒化物半導体発光素子、その製造方法、それを搭載した光学装置 - Google Patents

窒化物半導体発光素子、その製造方法、それを搭載した光学装置 Download PDF

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JP2004087908A
JP2004087908A JP2002248508A JP2002248508A JP2004087908A JP 2004087908 A JP2004087908 A JP 2004087908A JP 2002248508 A JP2002248508 A JP 2002248508A JP 2002248508 A JP2002248508 A JP 2002248508A JP 2004087908 A JP2004087908 A JP 2004087908A
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nitride semiconductor
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light emitting
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JP2004087908A5 (enExample
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Yuzo Tsuda
津田　有三
Yoshihiro Ueda
上田　吉裕
Takayuki Yuasa
湯浅　貴之
Shigetoshi Ito
伊藤　茂稔
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Sharp Corp
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JP2002248508A 2002-08-28 2002-08-28 窒化物半導体発光素子、その製造方法、それを搭載した光学装置 Pending JP2004087908A (ja)

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Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005101532A1 (ja) * 2004-04-16 2005-10-27 Nitride Semiconductors Co., Ltd. 窒化ガリウム系発光装置
JP2005310929A (ja) * 2004-04-20 2005-11-04 Nichia Chem Ind Ltd 窒化物半導体層のエッチング方法
JP2006332258A (ja) * 2005-05-25 2006-12-07 Matsushita Electric Ind Co Ltd 窒化物半導体装置及びその製造方法
JP2007184585A (ja) * 2005-12-29 2007-07-19 Shogen Koden Kofun Yugenkoshi 半導体発光素子及びその製造方法
JP2009054616A (ja) * 2007-08-23 2009-03-12 Sharp Corp 窒化物半導体発光素子の製造方法と窒化物半導体発光層
JP2009152552A (ja) * 2007-12-18 2009-07-09 Seoul Opto Devices Co Ltd 多重量子井戸構造の活性領域を有する発光ダイオード
JP2009218235A (ja) * 2008-03-06 2009-09-24 Rohm Co Ltd 発光ダイオード
JP2009259885A (ja) * 2008-04-14 2009-11-05 Sony Corp ＧａＮ系半導体発光素子、発光素子組立体、発光装置、ＧａＮ系半導体発光素子の駆動方法、及び、画像表示装置
JP2010067709A (ja) * 2008-09-09 2010-03-25 Toshiba Corp 半導体発光素子及びウェーハ
WO2010035849A1 (en) * 2008-09-25 2010-04-01 Toyoda Gosei Co., Ltd. Group iii nitride-based compound semiconductor light-emitting device and production method therefor
US7745841B2 (en) 2004-11-10 2010-06-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor light-emitting device
WO2011021264A1 (ja) * 2009-08-17 2011-02-24 株式会社 東芝 窒化物半導体発光素子
JP2011228751A (ja) * 2011-08-12 2011-11-10 Panasonic Corp 窒化物半導体装置
KR20120009870A (ko) * 2010-07-22 2012-02-02 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
JP2012119560A (ja) * 2010-12-02 2012-06-21 Toshiba Corp 半導体発光素子
JP2013030816A (ja) * 2012-11-07 2013-02-07 Toshiba Corp 半導体発光素子
KR20130029593A (ko) * 2011-09-15 2013-03-25 엘지이노텍 주식회사 발광소자
JP2013084818A (ja) * 2011-10-11 2013-05-09 Toshiba Corp 半導体発光素子
JP2013149889A (ja) * 2012-01-23 2013-08-01 Stanley Electric Co Ltd ＧａＮ系半導体発光素子
JP2014038912A (ja) * 2012-08-13 2014-02-27 Toshiba Corp 半導体発光素子
US8816320B2 (en) 2012-01-23 2014-08-26 Stanley Electric Co., Ltd. GaN-containing semiconductor light emitting device
JP2014187272A (ja) * 2013-03-25 2014-10-02 Stanley Electric Co Ltd 半導体発光素子の製造方法
US20160118537A1 (en) * 2014-10-23 2016-04-28 Stanley Electric Co., Ltd. Semiconductor light-emitting element
DE102015100029A1 (de) * 2015-01-05 2016-07-07 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP6039026B1 (ja) * 2015-09-04 2016-12-07 Ｄｏｗａエレクトロニクス株式会社 ｎ型オーミック電極の製造方法、ならびにｎ型オーミック電極、ｎ型電極およびＩＩＩ族窒化物半導体発光素子
US10305257B2 (en) 2015-05-26 2019-05-28 Nichia Corporation Semiconductor laser device
JP2020035937A (ja) * 2018-08-31 2020-03-05 日亜化学工業株式会社 半導体レーザ素子
CN115274959A (zh) * 2022-07-08 2022-11-01 华灿光电（浙江）有限公司 发光二极管外延片及其制备方法

Cited By (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7067838B1 (en) 2004-04-16 2006-06-27 Nitride Semiconductors Co., Ltd. Gallium-nitride-based light-emitting apparatus
JPWO2005101532A1 (ja) * 2004-04-16 2007-08-16 ナイトライド・セミコンダクター株式会社 窒化ガリウム系発光装置
CN100359707C (zh) * 2004-04-16 2008-01-02 氮化物半导体株式会社 氮化镓系发光器件
WO2005101532A1 (ja) * 2004-04-16 2005-10-27 Nitride Semiconductors Co., Ltd. 窒化ガリウム系発光装置
JP2005310929A (ja) * 2004-04-20 2005-11-04 Nichia Chem Ind Ltd 窒化物半導体層のエッチング方法
US7745841B2 (en) 2004-11-10 2010-06-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor light-emitting device
JP2006332258A (ja) * 2005-05-25 2006-12-07 Matsushita Electric Ind Co Ltd 窒化物半導体装置及びその製造方法
JP2007184585A (ja) * 2005-12-29 2007-07-19 Shogen Koden Kofun Yugenkoshi 半導体発光素子及びその製造方法
JP2009054616A (ja) * 2007-08-23 2009-03-12 Sharp Corp 窒化物半導体発光素子の製造方法と窒化物半導体発光層
JP2009152552A (ja) * 2007-12-18 2009-07-09 Seoul Opto Devices Co Ltd 多重量子井戸構造の活性領域を有する発光ダイオード
JP2009218235A (ja) * 2008-03-06 2009-09-24 Rohm Co Ltd 発光ダイオード
US8168986B2 (en) 2008-04-14 2012-05-01 Sony Corporation GaN-based semiconductor light-emitting element, light-emitting element assembly, light-emitting apparatus, method of driving GaN-based semiconductor light-emitting element, and image display apparatus
JP2009259885A (ja) * 2008-04-14 2009-11-05 Sony Corp ＧａＮ系半導体発光素子、発光素子組立体、発光装置、ＧａＮ系半導体発光素子の駆動方法、及び、画像表示装置
US8324611B2 (en) 2008-09-09 2012-12-04 Kabushiki Kaisha Toshiba Semiconductor light emitting device and wafer
JP2010067709A (ja) * 2008-09-09 2010-03-25 Toshiba Corp 半導体発光素子及びウェーハ
US8692228B2 (en) 2008-09-09 2014-04-08 Kabushiki Kaisha Toshiba Semiconductor light emitting device and wafer
JP2010080619A (ja) * 2008-09-25 2010-04-08 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子及びその製造方法
WO2010035849A1 (en) * 2008-09-25 2010-04-01 Toyoda Gosei Co., Ltd. Group iii nitride-based compound semiconductor light-emitting device and production method therefor
US9064996B2 (en) 2008-09-25 2015-06-23 Toyoda Gosei Co., Ltd. Group III nitride-based compound semiconductor light-emitting device and production method therefor
WO2011021264A1 (ja) * 2009-08-17 2011-02-24 株式会社 東芝 窒化物半導体発光素子
KR20120009870A (ko) * 2010-07-22 2012-02-02 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
KR101662242B1 (ko) 2010-07-22 2016-10-04 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
JP2012119560A (ja) * 2010-12-02 2012-06-21 Toshiba Corp 半導体発光素子
JP2011228751A (ja) * 2011-08-12 2011-11-10 Panasonic Corp 窒化物半導体装置
KR101855064B1 (ko) * 2011-09-15 2018-06-08 엘지이노텍 주식회사 발광소자
KR20130029593A (ko) * 2011-09-15 2013-03-25 엘지이노텍 주식회사 발광소자
JP2013084818A (ja) * 2011-10-11 2013-05-09 Toshiba Corp 半導体発光素子
JP2013149889A (ja) * 2012-01-23 2013-08-01 Stanley Electric Co Ltd ＧａＮ系半導体発光素子
US8816320B2 (en) 2012-01-23 2014-08-26 Stanley Electric Co., Ltd. GaN-containing semiconductor light emitting device
US9012886B2 (en) 2012-08-13 2015-04-21 Kabushiki Kaisha Toshiba Semiconductor light emitting device
JP2014038912A (ja) * 2012-08-13 2014-02-27 Toshiba Corp 半導体発光素子
JP2013030816A (ja) * 2012-11-07 2013-02-07 Toshiba Corp 半導体発光素子
JP2014187272A (ja) * 2013-03-25 2014-10-02 Stanley Electric Co Ltd 半導体発光素子の製造方法
US20160118537A1 (en) * 2014-10-23 2016-04-28 Stanley Electric Co., Ltd. Semiconductor light-emitting element
DE102015100029A1 (de) * 2015-01-05 2016-07-07 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
US10020421B2 (en) 2015-01-05 2018-07-10 Osram Opto Semiconductors Gmbh Optoelectronic component
US10305257B2 (en) 2015-05-26 2019-05-28 Nichia Corporation Semiconductor laser device
US10686298B2 (en) 2015-05-26 2020-06-16 Nichia Corporation Method of manufacturing semiconductor laser device
JP6039026B1 (ja) * 2015-09-04 2016-12-07 Ｄｏｗａエレクトロニクス株式会社 ｎ型オーミック電極の製造方法、ならびにｎ型オーミック電極、ｎ型電極およびＩＩＩ族窒化物半導体発光素子
US10475964B2 (en) 2015-09-04 2019-11-12 Dowa Electronics Materials Co., Ltd. Method of producing n-type ohmic electrode and n-type ohmic electrode, n-type electrode, and III nitride semiconductor light-emitting device
WO2017038102A1 (ja) * 2015-09-04 2017-03-09 Ｄｏｗａエレクトロニクス株式会社 ｎ型オーミック電極の製造方法、ならびにｎ型オーミック電極、ｎ型電極およびＩＩＩ族窒化物半導体発光素子
JP2023105167A (ja) * 2018-08-31 2023-07-28 日亜化学工業株式会社 半導体レーザ素子
CN113644551A (zh) * 2018-08-31 2021-11-12 日亚化学工业株式会社 半导体激光元件
US11594861B2 (en) 2018-08-31 2023-02-28 Nichia Corporation Semiconductor laser element
JP7295371B2 (ja) 2018-08-31 2023-06-21 日亜化学工業株式会社 半導体レーザ素子
JP2020035937A (ja) * 2018-08-31 2020-03-05 日亜化学工業株式会社 半導体レーザ素子
CN113644551B (zh) * 2018-08-31 2023-08-08 日亚化学工业株式会社 半导体激光元件
US11848540B2 (en) 2018-08-31 2023-12-19 Nichia Corporation Semiconductor laser element
JP7545084B2 (ja) 2018-08-31 2024-09-04 日亜化学工業株式会社 半導体レーザ素子
JP2024159900A (ja) * 2018-08-31 2024-11-08 日亜化学工業株式会社 半導体レーザ素子
CN115274959A (zh) * 2022-07-08 2022-11-01 华灿光电（浙江）有限公司 发光二极管外延片及其制备方法

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