JP2004064046A5 - - Google Patents

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Publication number
JP2004064046A5
JP2004064046A5 JP2003076962A JP2003076962A JP2004064046A5 JP 2004064046 A5 JP2004064046 A5 JP 2004064046A5 JP 2003076962 A JP2003076962 A JP 2003076962A JP 2003076962 A JP2003076962 A JP 2003076962A JP 2004064046 A5 JP2004064046 A5 JP 2004064046A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003076962A
Other languages
Japanese (ja)
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JP2004064046A (ja
JP4250006B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2003076962A external-priority patent/JP4250006B2/ja
Priority to JP2003076962A priority Critical patent/JP4250006B2/ja
Priority to KR1020030035584A priority patent/KR100930556B1/ko
Priority to TW092115253A priority patent/TWI296434B/zh
Priority to US10/454,667 priority patent/US7119439B2/en
Priority to CNB031424244A priority patent/CN1290186C/zh
Publication of JP2004064046A publication Critical patent/JP2004064046A/ja
Priority to US10/948,569 priority patent/US7241676B2/en
Publication of JP2004064046A5 publication Critical patent/JP2004064046A5/ja
Publication of JP4250006B2 publication Critical patent/JP4250006B2/ja
Application granted granted Critical
Priority to KR1020090067257A priority patent/KR100964263B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003076962A 2002-06-06 2003-03-20 半導体装置及びその製造方法 Expired - Fee Related JP4250006B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2003076962A JP4250006B2 (ja) 2002-06-06 2003-03-20 半導体装置及びその製造方法
KR1020030035584A KR100930556B1 (ko) 2002-06-06 2003-06-03 반도체 장치 및 그 제조 방법
TW092115253A TWI296434B (en) 2002-06-06 2003-06-05 Semiconductor device and method for manufacturing the same
US10/454,667 US7119439B2 (en) 2002-06-06 2003-06-05 Semiconductor device and method for manufacturing the same
CNB031424244A CN1290186C (zh) 2002-06-06 2003-06-06 半导体器件及其制造方法
US10/948,569 US7241676B2 (en) 2002-06-06 2004-09-24 Semiconductor device and method for manufacturing the same
KR1020090067257A KR100964263B1 (ko) 2002-06-06 2009-07-23 반도체 장치 및 그 제조 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002165818 2002-06-06
JP2003076962A JP4250006B2 (ja) 2002-06-06 2003-03-20 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2004064046A JP2004064046A (ja) 2004-02-26
JP2004064046A5 true JP2004064046A5 (enExample) 2006-05-11
JP4250006B2 JP4250006B2 (ja) 2009-04-08

Family

ID=29714357

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003076962A Expired - Fee Related JP4250006B2 (ja) 2002-06-06 2003-03-20 半導体装置及びその製造方法

Country Status (5)

Country Link
US (2) US7119439B2 (enExample)
JP (1) JP4250006B2 (enExample)
KR (2) KR100930556B1 (enExample)
CN (1) CN1290186C (enExample)
TW (1) TWI296434B (enExample)

Families Citing this family (47)

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JP4360881B2 (ja) * 2003-03-24 2009-11-11 Ｎｅｃエレクトロニクス株式会社 多層配線を含む半導体装置およびその製造方法
US20040245636A1 (en) * 2003-06-06 2004-12-09 International Business Machines Corporation Full removal of dual damascene metal level
US7387960B2 (en) * 2003-09-16 2008-06-17 Texas Instruments Incorporated Dual depth trench termination method for improving Cu-based interconnect integrity
WO2005034234A1 (ja) * 2003-10-02 2005-04-14 Fujitsu Limited 半導体装置及びその製造方法
JP2005136215A (ja) * 2003-10-30 2005-05-26 Toshiba Corp 半導体装置
JP2005142262A (ja) * 2003-11-05 2005-06-02 Toshiba Corp 半導体装置および半導体装置の製造方法
JP4603281B2 (ja) * 2004-03-31 2010-12-22 ルネサスエレクトロニクス株式会社 半導体装置
WO2005096364A1 (ja) * 2004-03-31 2005-10-13 Nec Corporation 半導体装置及びその製造方法
JP4280204B2 (ja) 2004-06-15 2009-06-17 Ｏｋｉセミコンダクタ株式会社 半導体装置
JP2006073891A (ja) * 2004-09-03 2006-03-16 Renesas Technology Corp 半導体装置及び半導体装置の製造方法
US7777338B2 (en) * 2004-09-13 2010-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. Seal ring structure for integrated circuit chips
US7125791B2 (en) * 2004-10-12 2006-10-24 Taiwan Semiconductor Manufacturing Company, Ltd. Advanced copper damascene structure
KR100782202B1 (ko) 2005-02-25 2007-12-05 가부시끼가이샤 도시바 반도체 장치 및 그 제조 방법
US7479447B2 (en) * 2005-04-04 2009-01-20 International Business Machines Corporation Method of forming a crack stop void in a low-k dielectric layer between adjacent fuses
JP2007012996A (ja) * 2005-07-01 2007-01-18 Toshiba Corp 半導体装置
JP2007019188A (ja) * 2005-07-06 2007-01-25 Renesas Technology Corp 半導体集積回路装置およびその製造方法
JP4282646B2 (ja) * 2005-09-09 2009-06-24 株式会社東芝 半導体装置の製造方法
JP4699172B2 (ja) * 2005-10-25 2011-06-08 ルネサスエレクトロニクス株式会社 半導体装置
US7449785B2 (en) * 2006-02-06 2008-11-11 Taiwan Semiconductor Manufacturing Co., Ltd. Solder bump on a semiconductor substrate
JP2008016638A (ja) * 2006-07-06 2008-01-24 Sony Corp 半導体装置
JP4864608B2 (ja) * 2006-08-28 2012-02-01 東京エレクトロン株式会社 課金方法、記憶媒体及び半導体デバイス製造装置
JP4506767B2 (ja) * 2007-02-28 2010-07-21 カシオ計算機株式会社 半導体装置の製造方法
KR100995558B1 (ko) 2007-03-22 2010-11-22 후지쯔 세미컨덕터 가부시키가이샤 반도체 장치 및 반도체 장치의 제조 방법
JP5332200B2 (ja) * 2007-03-22 2013-11-06 富士通セミコンダクター株式会社 半導体装置及び半導体装置の製造方法
JP5365514B2 (ja) * 2007-03-30 2013-12-11 富士通セミコンダクター株式会社 半導体装置およびその製造方法
JP5117791B2 (ja) * 2007-08-22 2013-01-16 ルネサスエレクトロニクス株式会社 半導体装置
JP2009076782A (ja) * 2007-09-21 2009-04-09 Sharp Corp 半導体基板、その製造方法、および半導体チップ
JP2009088269A (ja) 2007-09-28 2009-04-23 Toshiba Corp 半導体装置、およびその製造方法
JP2009135139A (ja) * 2007-11-28 2009-06-18 Toshiba Corp 半導体装置及びその製造方法
US7704804B2 (en) 2007-12-10 2010-04-27 International Business Machines Corporation Method of forming a crack stop laser fuse with fixed passivation layer coverage
US8772156B2 (en) * 2008-05-09 2014-07-08 International Business Machines Corporation Methods of fabricating interconnect structures containing various capping materials for electrical fuse and other related applications
US7956466B2 (en) 2008-05-09 2011-06-07 International Business Machines Corporation Structure for interconnect structure containing various capping materials for electrical fuse and other related applications
JP2010153543A (ja) * 2008-12-25 2010-07-08 Fujitsu Ltd 半導体装置およびその製造方法
US7892926B2 (en) * 2009-07-24 2011-02-22 International Business Machines Corporation Fuse link structures using film stress for programming and methods of manufacture
US8124448B2 (en) * 2009-09-18 2012-02-28 Advanced Micro Devices, Inc. Semiconductor chip with crack deflection structure
US8592941B2 (en) 2010-07-19 2013-11-26 International Business Machines Corporation Fuse structure having crack stop void, method for forming and programming same, and design structure
CN103185998B (zh) * 2011-12-30 2015-07-15 上海天马微电子有限公司 非晶硅栅极驱动线路的形成方法及液晶显示器形成方法
JP5834934B2 (ja) 2012-01-17 2015-12-24 富士通セミコンダクター株式会社 半導体装置及び半導体装置の製造方法
US8906801B2 (en) * 2012-03-12 2014-12-09 GlobalFoundries, Inc. Processes for forming integrated circuits and integrated circuits formed thereby
JP5504311B2 (ja) * 2012-08-06 2014-05-28 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US8916461B2 (en) 2012-09-20 2014-12-23 International Business Machines Corporation Electronic fuse vias in interconnect structures
TWI495074B (zh) 2012-11-30 2015-08-01 財團法人工業技術研究院 減能結構
WO2014109044A1 (ja) * 2013-01-11 2014-07-17 ルネサスエレクトロニクス株式会社 半導体装置
JP2016018879A (ja) * 2014-07-08 2016-02-01 株式会社東芝 半導体装置および半導体装置の製造方法
US10475796B1 (en) * 2018-06-28 2019-11-12 Micron Technology, Inc. Method of forming an array of capacitors, a method of forming DRAM circuitry, and a method of forming an elevationally-elongated conductive structure of integrated circuitry
US10461149B1 (en) 2018-06-28 2019-10-29 Micron Technology, Inc. Elevationally-elongated conductive structure of integrated circuitry, method of forming an array of capacitors, method of forming DRAM circuitry, and method of forming an elevationally-elongated conductive structure of integrated circuitry
US11373962B2 (en) * 2020-08-14 2022-06-28 Taiwan Semiconductor Manufacturing Co., Ltd. Advanced seal ring structure and method of making the same

Family Cites Families (18)

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US6291891B1 (en) * 1998-01-13 2001-09-18 Kabushiki Kaisha Toshiba Semiconductor device manufacturing method and semiconductor device
JP3469771B2 (ja) * 1998-03-24 2003-11-25 富士通株式会社 半導体装置およびその製造方法
JPH11312680A (ja) * 1998-04-30 1999-11-09 Nec Corp 配線の形成方法
JP3293792B2 (ja) 1999-01-12 2002-06-17 日本電気株式会社 半導体装置及びその製造方法
JP4108228B2 (ja) 1999-07-15 2008-06-25 富士通株式会社 半導体装置の製造方法
JP4192348B2 (ja) 1999-08-09 2008-12-10 株式会社デンソー 半導体装置
US6566258B1 (en) 2000-05-10 2003-05-20 Applied Materials, Inc. Bi-layer etch stop for inter-level via
US6362524B1 (en) * 2000-07-26 2002-03-26 Advanced Micro Devices, Inc. Edge seal ring for copper damascene process and method for fabrication thereof
JP2002076114A (ja) 2000-08-30 2002-03-15 Hitachi Ltd 半導体装置の製造方法
JP4118029B2 (ja) * 2001-03-09 2008-07-16 富士通株式会社 半導体集積回路装置とその製造方法
JP4523194B2 (ja) * 2001-04-13 2010-08-11 富士通セミコンダクター株式会社 半導体装置とその製造方法
US6566171B1 (en) * 2001-06-12 2003-05-20 Lsi Logic Corporation Fuse construction for integrated circuit structure having low dielectric constant dielectric material
JP4948715B2 (ja) * 2001-06-29 2012-06-06 富士通セミコンダクター株式会社 半導体ウエハ装置およびその製造方法
JP2003115535A (ja) * 2001-10-04 2003-04-18 Hitachi Ltd 半導体集積回路装置
JP3757143B2 (ja) * 2001-10-11 2006-03-22 富士通株式会社 半導体装置の製造方法及び半導体装置
US6734090B2 (en) * 2002-02-20 2004-05-11 International Business Machines Corporation Method of making an edge seal for a semiconductor device
JP3813562B2 (ja) * 2002-03-15 2006-08-23 富士通株式会社 半導体装置及びその製造方法
JP4088120B2 (ja) * 2002-08-12 2008-05-21 株式会社ルネサステクノロジ 半導体装置

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