JP2003526901A - 集積回路の相互接続システム - Google Patents

集積回路の相互接続システム

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Publication number
JP2003526901A
JP2003526901A JP2000601543A JP2000601543A JP2003526901A JP 2003526901 A JP2003526901 A JP 2003526901A JP 2000601543 A JP2000601543 A JP 2000601543A JP 2000601543 A JP2000601543 A JP 2000601543A JP 2003526901 A JP2003526901 A JP 2003526901A
Authority
JP
Japan
Prior art keywords
node
interconnection system
frequency response
inductor
capacitive element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000601543A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003526901A5 (enExample
Inventor
ミラー,チャールズ,エイ
Original Assignee
フォームファクター,インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/258,185 external-priority patent/US6448865B1/en
Application filed by フォームファクター,インコーポレイテッド filed Critical フォームファクター,インコーポレイテッド
Publication of JP2003526901A publication Critical patent/JP2003526901A/ja
Publication of JP2003526901A5 publication Critical patent/JP2003526901A5/ja
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227Inductive arrangements or effects of, or between, wiring layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60Protection against electrostatic charges or discharges, e.g. Faraday shields
    • HELECTRICITY
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    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/62Protection against overvoltage, e.g. fuses, shunts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
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    • H01L2223/66High-frequency adaptations
    • H01L2223/6605High-frequency electrical connections
    • H01L2223/6611Wire connections
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/4805Shape
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    • H01L2224/4813Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Filters And Equalizers (AREA)
  • Wire Bonding (AREA)
  • Waveguide Connection Structure (AREA)
JP2000601543A 1999-02-25 2000-02-23 集積回路の相互接続システム Pending JP2003526901A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US09/258,185 1999-02-25
US09/258,185 US6448865B1 (en) 1999-02-25 1999-02-25 Integrated circuit interconnect system
US09/510,657 US6459343B1 (en) 1999-02-25 2000-02-22 Integrated circuit interconnect system forming a multi-pole filter
US09/510,657 2000-02-22
PCT/US2000/004715 WO2000051012A2 (en) 1999-02-25 2000-02-23 Integrated circuit interconnect system

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007043028A Division JP2007189241A (ja) 1999-02-25 2007-02-22 集積回路の相互接続システム

Publications (2)

Publication Number Publication Date
JP2003526901A true JP2003526901A (ja) 2003-09-09
JP2003526901A5 JP2003526901A5 (enExample) 2007-04-12

Family

ID=26946481

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2000601543A Pending JP2003526901A (ja) 1999-02-25 2000-02-23 集積回路の相互接続システム
JP2007043028A Ceased JP2007189241A (ja) 1999-02-25 2007-02-22 集積回路の相互接続システム

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2007043028A Ceased JP2007189241A (ja) 1999-02-25 2007-02-22 集積回路の相互接続システム

Country Status (5)

Country Link
US (2) US6459343B1 (enExample)
EP (1) EP1200990A2 (enExample)
JP (2) JP2003526901A (enExample)
KR (1) KR100640130B1 (enExample)
WO (1) WO2000051012A2 (enExample)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004328190A (ja) * 2003-04-23 2004-11-18 Renesas Technology Corp 高周波電力増幅モジュール
US7737553B2 (en) 2004-10-06 2010-06-15 Panasonic Corporation Semiconductor device
JP2013183072A (ja) * 2012-03-02 2013-09-12 Toshiba Corp 半導体装置
JP2014053566A (ja) * 2012-09-10 2014-03-20 Toshiba Corp 半導体装置
JP2014154870A (ja) * 2013-02-14 2014-08-25 Rohm Co Ltd Lsiのesd保護回路および半導体装置
WO2015076008A1 (ja) * 2013-11-20 2015-05-28 株式会社村田製作所 インピーダンス変換回路および通信端末装置
WO2016063459A1 (ja) * 2014-10-24 2016-04-28 株式会社ソシオネクスト 半導体集積回路装置
WO2016063458A1 (ja) * 2014-10-24 2016-04-28 株式会社ソシオネクスト 半導体集積回路装置
KR20210103416A (ko) * 2020-02-13 2021-08-23 쟈인 에레쿠토로닉스 가부시키가이샤 반도체 장치, 수신 장치, 및, 송신 장치

Families Citing this family (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6232789B1 (en) 1997-05-28 2001-05-15 Cascade Microtech, Inc. Probe holder for low current measurements
US5729150A (en) 1995-12-01 1998-03-17 Cascade Microtech, Inc. Low-current probe card with reduced triboelectric current generating cables
US5914613A (en) 1996-08-08 1999-06-22 Cascade Microtech, Inc. Membrane probing system with local contact scrub
US6034533A (en) 1997-06-10 2000-03-07 Tervo; Paul A. Low-current pogo probe card
US6256882B1 (en) 1998-07-14 2001-07-10 Cascade Microtech, Inc. Membrane probing system
US6538538B2 (en) 1999-02-25 2003-03-25 Formfactor, Inc. High frequency printed circuit board via
US6459343B1 (en) * 1999-02-25 2002-10-01 Formfactor, Inc. Integrated circuit interconnect system forming a multi-pole filter
US6578264B1 (en) 1999-06-04 2003-06-17 Cascade Microtech, Inc. Method for constructing a membrane probe using a depression
US6597227B1 (en) * 2000-01-21 2003-07-22 Atheros Communications, Inc. System for providing electrostatic discharge protection for high-speed integrated circuits
US6801869B2 (en) * 2000-02-22 2004-10-05 Mccord Don Method and system for wafer and device-level testing of an integrated circuit
US6838890B2 (en) 2000-02-25 2005-01-04 Cascade Microtech, Inc. Membrane probing system
WO2002025296A2 (en) * 2000-09-22 2002-03-28 Don Mccord Method and system for wafer and device-level testing of an integrated circuit
DE20114544U1 (de) 2000-12-04 2002-02-21 Cascade Microtech, Inc., Beaverton, Oreg. Wafersonde
WO2002058155A1 (en) * 2001-01-19 2002-07-25 Koninklijke Philips Electronics N.V. Semiconductor chip with internal esd matching
EP1418680A4 (en) * 2001-08-10 2005-04-06 Hitachi Metals Ltd DERIVATION FILTER, MUTIBAND ANTENNA SWITCHING CIRCUIT, LAMINATED MODULE COMPOSITE ELEMENT, AND COMMUNICATION DEVICE USING SAME
AU2002327490A1 (en) 2001-08-21 2003-06-30 Cascade Microtech, Inc. Membrane probing system
US7289302B1 (en) * 2001-10-04 2007-10-30 Maxtor Corporation On slider inductors and capacitors to reduce electrostatic discharge damage
US6624999B1 (en) * 2001-11-20 2003-09-23 Intel Corporation Electrostatic discharge protection using inductors
US6816031B1 (en) 2001-12-04 2004-11-09 Formfactor, Inc. Adjustable delay transmission line
US20030120777A1 (en) * 2001-12-26 2003-06-26 First Data Corporation Forms auditing systems and methods
DE10214068B4 (de) * 2002-03-28 2009-02-19 Advanced Micro Devices, Inc., Sunnyvale ESD-Schutzschaltung für Radiofrequenz-Ausgangsanschlüsse in einer integrierten Schaltung
EP1509776A4 (en) 2002-05-23 2010-08-18 Cascade Microtech Inc PROBE TO TEST ANY TESTING EQUIPMENT
KR100894803B1 (ko) 2002-06-11 2009-04-30 세미컨덕터 콤포넨츠 인더스트리즈 엘엘씨 반도체 필터 회로 및 방법
US20030235019A1 (en) * 2002-06-19 2003-12-25 Ming-Dou Ker Electrostatic discharge protection scheme for flip-chip packaged integrated circuits
DE10231638B4 (de) * 2002-07-12 2011-07-28 Infineon Technologies AG, 81669 Integrierte Schaltungsanordnung
TW573350B (en) * 2002-10-25 2004-01-21 Via Tech Inc Integrated circuit with electrostatic discharge protection
US6724205B1 (en) 2002-11-13 2004-04-20 Cascade Microtech, Inc. Probe for combined signals
US7057404B2 (en) 2003-05-23 2006-06-06 Sharp Laboratories Of America, Inc. Shielded probe for testing a device under test
WO2006017078A2 (en) 2004-07-07 2006-02-16 Cascade Microtech, Inc. Probe head having a membrane suspended probe
DE112004002554T5 (de) 2003-12-24 2006-11-23 Cascade Microtech, Inc., Beaverton Active wafer probe
US7388424B2 (en) 2004-04-07 2008-06-17 Formfactor, Inc. Apparatus for providing a high frequency loop back with a DC path for a parametric test
US7466113B2 (en) * 2004-07-07 2008-12-16 02Micro International Limited Break-before-make sensing for drivers
US7327035B2 (en) * 2004-09-08 2008-02-05 Texas Instruments Incorporated System and method for providing a low frequency filter pole
DE202005021435U1 (de) 2004-09-13 2008-02-28 Cascade Microtech, Inc., Beaverton Doppelseitige Prüfaufbauten
US7656172B2 (en) 2005-01-31 2010-02-02 Cascade Microtech, Inc. System for testing semiconductors
US7535247B2 (en) 2005-01-31 2009-05-19 Cascade Microtech, Inc. Interface for testing semiconductors
US7449899B2 (en) 2005-06-08 2008-11-11 Cascade Microtech, Inc. Probe for high frequency signals
WO2006137979A2 (en) 2005-06-13 2006-12-28 Cascade Microtech, Inc. Wideband active-passive differential signal probe
JP4702178B2 (ja) * 2006-05-19 2011-06-15 ソニー株式会社 半導体結合装置、半導体素子及び高周波モジュール
JP4506722B2 (ja) * 2006-05-19 2010-07-21 ソニー株式会社 半導体素子結合装置、半導体素子、高周波モジュール及び半導体素子結合方法
DE112007001399T5 (de) 2006-06-09 2009-05-07 Cascade Microtech, Inc., Beaverton Messfühler für differentielle Signale mit integrierter Symmetrieschaltung
US7403028B2 (en) 2006-06-12 2008-07-22 Cascade Microtech, Inc. Test structure and probe for differential signals
US7443186B2 (en) 2006-06-12 2008-10-28 Cascade Microtech, Inc. On-wafer test structures for differential signals
US7723999B2 (en) 2006-06-12 2010-05-25 Cascade Microtech, Inc. Calibration structures for differential signal probing
US7764072B2 (en) 2006-06-12 2010-07-27 Cascade Microtech, Inc. Differential signal probing system
US7876114B2 (en) 2007-08-08 2011-01-25 Cascade Microtech, Inc. Differential waveguide probe
DE602007003031D1 (de) 2007-11-26 2009-12-10 Siae Microelettronica Spa Mikrowellenmodul
US7888957B2 (en) 2008-10-06 2011-02-15 Cascade Microtech, Inc. Probing apparatus with impedance optimized interface
US8107254B2 (en) * 2008-11-20 2012-01-31 International Business Machines Corporation Integrating capacitors into vias of printed circuit boards
US8410806B2 (en) 2008-11-21 2013-04-02 Cascade Microtech, Inc. Replaceable coupon for a probing apparatus
EP2384095B1 (en) * 2009-01-29 2014-10-15 Panasonic Corporation Differential transmission circuit and electronic device provided with the same
JP5578797B2 (ja) 2009-03-13 2014-08-27 ルネサスエレクトロニクス株式会社 半導体装置
US8242384B2 (en) * 2009-09-30 2012-08-14 International Business Machines Corporation Through hole-vias in multi-layer printed circuit boards
US8432027B2 (en) * 2009-11-11 2013-04-30 International Business Machines Corporation Integrated circuit die stacks with rotationally symmetric vias
US8258619B2 (en) * 2009-11-12 2012-09-04 International Business Machines Corporation Integrated circuit die stacks with translationally compatible vias
US8315068B2 (en) 2009-11-12 2012-11-20 International Business Machines Corporation Integrated circuit die stacks having initially identical dies personalized with fuses and methods of manufacturing the same
US8310841B2 (en) * 2009-11-12 2012-11-13 International Business Machines Corporation Integrated circuit die stacks having initially identical dies personalized with switches and methods of making the same
US9646947B2 (en) * 2009-12-22 2017-05-09 Lenovo Enterprise Solutions (Singapore) Pte. Ltd. Integrated circuit with inductive bond wires
CN103531580B (zh) * 2012-07-06 2016-08-03 联咏科技股份有限公司 芯片封装结构
CN104253134B (zh) * 2013-06-28 2017-11-10 上海天马微电子有限公司 一种像素单元静电防护结构及图像传感器
JP2015012571A (ja) * 2013-07-02 2015-01-19 ラピスセミコンダクタ株式会社 発振器及び位相同期回路
US9595217B2 (en) 2013-12-05 2017-03-14 Samsung Display Co., Ltd. Trace structure for improved electrical signaling
US10153238B2 (en) 2014-08-20 2018-12-11 Samsung Display Co., Ltd. Electrical channel including pattern voids
US9461810B2 (en) 2014-09-18 2016-10-04 Samsung Display Co., Ltd. Multi-drop channels including reflection enhancement
US9935063B2 (en) * 2016-07-01 2018-04-03 Intel Corporation Rlink-on-die inductor structures to improve signaling
DE102017103803A1 (de) * 2017-02-23 2018-08-23 Infineon Technologies Ag Eine Integrierte-Schaltung-Vorrichtung und eine Vorrichtung zum Schutz einer Schaltung
TW201843945A (zh) * 2017-03-03 2018-12-16 日商索尼半導體解決方案公司 傳送裝置及通信系統
US10128229B1 (en) 2017-11-13 2018-11-13 Micron Technology, Inc. Semiconductor devices with package-level configurability
US10867991B2 (en) * 2018-12-27 2020-12-15 Micron Technology, Inc. Semiconductor devices with package-level configurability
US10971458B2 (en) * 2019-01-07 2021-04-06 Credo Technology Group Limited Compensation network for high speed integrated circuits
KR102213561B1 (ko) * 2019-05-09 2021-02-08 베렉스주식회사 반도체 장치
CN114093334B (zh) * 2021-11-30 2022-09-06 长沙惠科光电有限公司 显示模组、显示装置及静电隔离方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04107940A (ja) * 1990-08-29 1992-04-09 Hitachi Ltd 半導体装置及びその構成部品
JPH0927521A (ja) * 1995-07-07 1997-01-28 Hewlett Packard Co <Hp> 回路部材の電気接続構造

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4354268A (en) 1980-04-03 1982-10-12 Santek, Inc. Intelligent test head for automatic test system
US4342013A (en) 1980-08-25 1982-07-27 Pilgrim Electric Co. Bidirectional power line filter
JPS5873881A (ja) 1981-10-29 1983-05-04 Advantest Corp Icテスタ
US4472725A (en) 1982-02-01 1984-09-18 Century Iii Electronics Inc. LC Delay line for feedforward amplifier
US4616178A (en) 1982-05-27 1986-10-07 Harris Corporation Pulsed linear integrated circuit tester
US4837622A (en) 1985-05-10 1989-06-06 Micro-Probe, Inc. High density probe card
JPH02198158A (ja) * 1989-01-27 1990-08-06 Hitachi Ltd 半導体装置
US5012213A (en) 1989-12-19 1991-04-30 Motorola, Inc. Providing a PGA package with a low reflection line
US5090118A (en) 1990-07-31 1992-02-25 Texas Instruments Incorporated High performance test head and method of making
US5172051A (en) 1991-04-24 1992-12-15 Hewlett-Packard Company Wide bandwidth passive probe
JPH0555287A (ja) * 1991-08-26 1993-03-05 Seiko Epson Corp 半導体集積回路装置
GB2263980B (en) 1992-02-07 1996-04-10 Marconi Gec Ltd Apparatus and method for testing bare dies
US5182220A (en) 1992-04-02 1993-01-26 United Microelectronics Corporation CMOS on-chip ESD protection circuit and semiconductor structure
US5270673A (en) 1992-07-24 1993-12-14 Hewlett-Packard Company Surface mount microcircuit hybrid
US5424693A (en) 1993-01-13 1995-06-13 Industrial Technology Research Institute Surface mountable microwave IC package
US5309019A (en) 1993-02-26 1994-05-03 Motorola, Inc. Low inductance lead frame for a semiconductor package
US5536906A (en) 1993-07-23 1996-07-16 Texas Instruments Incorporated Package for integrated circuits
WO1996016440A1 (en) 1994-11-15 1996-05-30 Formfactor, Inc. Interconnection elements for microelectronic components
US5521406A (en) 1994-08-31 1996-05-28 Texas Instruments Incorporated Integrated circuit with improved thermal impedance
US5546405A (en) 1995-07-17 1996-08-13 Advanced Micro Devices, Inc. Debug apparatus for an automated semiconductor testing system
US5642054A (en) 1995-08-08 1997-06-24 Hughes Aircraft Company Active circuit multi-port membrane probe for full wafer testing
JPH09121127A (ja) * 1995-10-26 1997-05-06 Murata Mfg Co Ltd 高周波増幅集積回路装置
US5744869A (en) 1995-12-05 1998-04-28 Motorola, Inc. Apparatus for mounting a flip-chip semiconductor device
US5917220A (en) 1996-12-31 1999-06-29 Stmicroelectronics, Inc. Integrated circuit with improved overvoltage protection
US5901022A (en) 1997-02-24 1999-05-04 Industrial Technology Research Inst. Charged device mode ESD protection circuit
JP2000510653A (ja) 1997-04-16 2000-08-15 ザ ボード オブ トラスティーズ オブ ザ リーランド スタンフォード ジュニア ユニバーシティ 高速集積回路のための分散型esd保護デバイス
US5869898A (en) 1997-04-25 1999-02-09 Nec Corporation Lead-frame having interdigitated signal and ground leads with high frequency leads positioned adjacent a corner and shielded by ground leads on either side thereof
WO1998052224A1 (en) 1997-05-15 1998-11-19 Formfactor, Inc. Lithographically defined microelectronic contact structures
US6008533A (en) 1997-12-08 1999-12-28 Micron Technology, Inc. Controlling impedances of an integrated circuit
US6459343B1 (en) * 1999-02-25 2002-10-01 Formfactor, Inc. Integrated circuit interconnect system forming a multi-pole filter

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04107940A (ja) * 1990-08-29 1992-04-09 Hitachi Ltd 半導体装置及びその構成部品
JPH0927521A (ja) * 1995-07-07 1997-01-28 Hewlett Packard Co <Hp> 回路部材の電気接続構造

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004328190A (ja) * 2003-04-23 2004-11-18 Renesas Technology Corp 高周波電力増幅モジュール
US7737553B2 (en) 2004-10-06 2010-06-15 Panasonic Corporation Semiconductor device
JP2013183072A (ja) * 2012-03-02 2013-09-12 Toshiba Corp 半導体装置
JP2014053566A (ja) * 2012-09-10 2014-03-20 Toshiba Corp 半導体装置
JP2014154870A (ja) * 2013-02-14 2014-08-25 Rohm Co Ltd Lsiのesd保護回路および半導体装置
WO2015076008A1 (ja) * 2013-11-20 2015-05-28 株式会社村田製作所 インピーダンス変換回路および通信端末装置
WO2016063459A1 (ja) * 2014-10-24 2016-04-28 株式会社ソシオネクスト 半導体集積回路装置
WO2016063458A1 (ja) * 2014-10-24 2016-04-28 株式会社ソシオネクスト 半導体集積回路装置
JPWO2016063458A1 (ja) * 2014-10-24 2017-08-03 株式会社ソシオネクスト 半導体集積回路装置
JPWO2016063459A1 (ja) * 2014-10-24 2017-08-03 株式会社ソシオネクスト 半導体集積回路装置
US10002832B2 (en) 2014-10-24 2018-06-19 Socionext, Inc. Semiconductor integrated circuit device
US10186504B2 (en) 2014-10-24 2019-01-22 Socionext Inc. Semiconductor integrated circuit device
US10438939B2 (en) 2014-10-24 2019-10-08 Socionext Inc. Semiconductor integrated circuit device
US10446492B2 (en) 2014-10-24 2019-10-15 Socionext Inc. Semiconductor integrated circuit device
KR20210103416A (ko) * 2020-02-13 2021-08-23 쟈인 에레쿠토로닉스 가부시키가이샤 반도체 장치, 수신 장치, 및, 송신 장치
JP2021129009A (ja) * 2020-02-13 2021-09-02 ザインエレクトロニクス株式会社 半導体装置
JP7426702B2 (ja) 2020-02-13 2024-02-02 ザインエレクトロニクス株式会社 半導体装置
KR102871611B1 (ko) * 2020-02-13 2025-10-15 쟈인 에레쿠토로닉스 가부시키가이샤 반도체 장치, 수신 장치, 및, 송신 장치

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