JP2003526219A5 - - Google Patents

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Publication number
JP2003526219A5
JP2003526219A5 JP2001565434A JP2001565434A JP2003526219A5 JP 2003526219 A5 JP2003526219 A5 JP 2003526219A5 JP 2001565434 A JP2001565434 A JP 2001565434A JP 2001565434 A JP2001565434 A JP 2001565434A JP 2003526219 A5 JP2003526219 A5 JP 2003526219A5
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JP
Japan
Prior art keywords
layered superlattice
superlattice material
seed layer
substrate
range
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2001565434A
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English (en)
Japanese (ja)
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JP3962258B2 (ja
JP2003526219A (ja
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Publication date
Priority claimed from US09/521,094 external-priority patent/US6562678B1/en
Application filed filed Critical
Publication of JP2003526219A publication Critical patent/JP2003526219A/ja
Publication of JP2003526219A5 publication Critical patent/JP2003526219A5/ja
Application granted granted Critical
Publication of JP3962258B2 publication Critical patent/JP3962258B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001565434A 2000-03-07 2001-02-21 層状超格子材料を製造する化学蒸着プロセス Expired - Fee Related JP3962258B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/521,094 2000-03-07
US09/521,094 US6562678B1 (en) 2000-03-07 2000-03-07 Chemical vapor deposition process for fabricating layered superlattice materials
PCT/US2001/005572 WO2001066834A2 (en) 2000-03-07 2001-02-21 Chemical vapor deposition process for fabricating layered superlattice materials

Publications (3)

Publication Number Publication Date
JP2003526219A JP2003526219A (ja) 2003-09-02
JP2003526219A5 true JP2003526219A5 (enExample) 2007-05-17
JP3962258B2 JP3962258B2 (ja) 2007-08-22

Family

ID=24075326

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001565434A Expired - Fee Related JP3962258B2 (ja) 2000-03-07 2001-02-21 層状超格子材料を製造する化学蒸着プロセス

Country Status (4)

Country Link
US (2) US6562678B1 (enExample)
JP (1) JP3962258B2 (enExample)
TW (1) TW527665B (enExample)
WO (1) WO2001066834A2 (enExample)

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US6617626B2 (en) * 2001-02-28 2003-09-09 Fujitsu Limited Ferroelectric semiconductor memory device and a fabrication process thereof
US20040248338A1 (en) * 2001-07-09 2004-12-09 Henning Sirringhaus Solution influenced alignment
US6815223B2 (en) * 2002-11-22 2004-11-09 Symetrix Corporation Low thermal budget fabrication of ferroelectric memory using RTP
US7118726B2 (en) 2002-12-13 2006-10-10 Clark Manufacturing, Llc Method for making oxide compounds
US6830964B1 (en) * 2003-06-26 2004-12-14 Rj Mears, Llc Method for making semiconductor device including band-engineered superlattice
US6833294B1 (en) * 2003-06-26 2004-12-21 Rj Mears, Llc Method for making semiconductor device including band-engineered superlattice
US20050019960A1 (en) * 2003-07-25 2005-01-27 Moon-Sook Lee Method and apparatus for forming a ferroelectric layer
JP3937174B2 (ja) * 2004-03-22 2007-06-27 セイコーエプソン株式会社 強誘電体膜、強誘電体膜の製造方法、強誘電体キャパシタ、強誘電体メモリおよび圧電素子
CN101052615B (zh) * 2004-11-02 2010-07-14 株式会社艾迪科 金属化合物、薄膜形成用原料及薄膜的制造方法
US20060169592A1 (en) * 2005-01-31 2006-08-03 Hewlett-Packard Development Company, L.P. Periodic layered structures and methods therefor
KR100631972B1 (ko) * 2005-02-28 2006-10-11 삼성전기주식회사 화학기상증착 공정을 이용한 초격자 반도체 구조를 제조하는 방법
EP1994555A4 (en) 2006-03-10 2009-12-16 Advanced Tech Materials PRECURSOR COMPOSITIONS FOR STORING ATOMIC LAYERS AND CHEMICAL PREVENTION OF TITANIUM, LANTHANATE AND DIELECTRIC TANTALATE FILMS
WO2009020888A1 (en) 2007-08-08 2009-02-12 Advanced Technology Materials, Inc. Strontium and barium precursors for use in chemical vapor deposition, atomic layer deposition and rapid vapor deposition
KR101370275B1 (ko) * 2007-08-21 2014-03-05 삼성전자주식회사 상변화 메모리 소자 및 그 제조 방법
US20140037988A1 (en) * 2010-04-27 2014-02-06 Ppg Industries Ohio, Inc. Method of depositing niobium doped titania film on a substrate and the coated substrate made thereby
US9373677B2 (en) 2010-07-07 2016-06-21 Entegris, Inc. Doping of ZrO2 for DRAM applications
WO2013177326A1 (en) 2012-05-25 2013-11-28 Advanced Technology Materials, Inc. Silicon precursors for low temperature ald of silicon-based thin-films
US10186570B2 (en) 2013-02-08 2019-01-22 Entegris, Inc. ALD processes for low leakage current and low equivalent oxide thickness BiTaO films
CN115734614A (zh) * 2021-08-27 2023-03-03 联华电子股份有限公司 半导体元件及其制作方法

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US5519234A (en) 1991-02-25 1996-05-21 Symetrix Corporation Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current
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JP2000022105A (ja) * 1998-06-30 2000-01-21 Oki Electric Ind Co Ltd 半導体装置の製造方法
US6171934B1 (en) * 1998-08-31 2001-01-09 Symetrix Corporation Recovery of electronic properties in process-damaged ferroelectrics by voltage-cycling
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US6236076B1 (en) * 1999-04-29 2001-05-22 Symetrix Corporation Ferroelectric field effect transistors for nonvolatile memory applications having functional gradient material
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