JP2003298152A5 - - Google Patents

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Publication number
JP2003298152A5
JP2003298152A5 JP2002099252A JP2002099252A JP2003298152A5 JP 2003298152 A5 JP2003298152 A5 JP 2003298152A5 JP 2002099252 A JP2002099252 A JP 2002099252A JP 2002099252 A JP2002099252 A JP 2002099252A JP 2003298152 A5 JP2003298152 A5 JP 2003298152A5
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Japan
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heterojunction
junction
functional layer
exposed
electrode
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JP2002099252A
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Japanese (ja)
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JP4306176B2 (ja
JP2003298152A (ja
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Publication of JP2003298152A5 publication Critical patent/JP2003298152A5/ja
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JP2002099252A 2002-04-01 2002-04-01 ヘテロ接合素子 Expired - Fee Related JP4306176B2 (ja)

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JP2002099252A JP4306176B2 (ja) 2002-04-01 2002-04-01 ヘテロ接合素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002099252A JP4306176B2 (ja) 2002-04-01 2002-04-01 ヘテロ接合素子

Publications (3)

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JP2003298152A JP2003298152A (ja) 2003-10-17
JP2003298152A5 true JP2003298152A5 (enExample) 2005-08-18
JP4306176B2 JP4306176B2 (ja) 2009-07-29

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JP (1) JP4306176B2 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4539078B2 (ja) 2003-11-07 2010-09-08 セイコーエプソン株式会社 有機エレクトロルミネッセンス装置の製造方法
JP4581386B2 (ja) * 2003-12-10 2010-11-17 ソニー株式会社 光電変換素子の製造方法、電子装置の製造方法および発光素子の製造方法
JP4824913B2 (ja) * 2004-02-17 2011-11-30 国立大学法人京都大学 グラフト薄膜を用いた光電素子及び太陽電池
WO2005101524A2 (en) * 2004-04-13 2005-10-27 The Trustees Of Princeton University Method of fabricating an optoelectronic device having a bulk heterojunction
US7419846B2 (en) * 2004-04-13 2008-09-02 The Trustees Of Princeton University Method of fabricating an optoelectronic device having a bulk heterojunction
JP2006073900A (ja) * 2004-09-03 2006-03-16 Nippon Oil Corp 光電変換素子
WO2006093275A1 (ja) * 2005-03-04 2006-09-08 Matsushita Electric Works, Ltd. 積層型有機太陽電池
US20070290195A1 (en) * 2005-08-22 2007-12-20 Stephen Forrest Increased open-circuit-voltage organic photosensitive devices
JP4775906B2 (ja) * 2005-11-29 2011-09-21 日東電工株式会社 光起電力装置及びその製造方法
KR101027708B1 (ko) 2006-03-20 2011-04-12 파나소닉 전공 주식회사 유기 박막 태양 전지
WO2008152889A1 (ja) * 2007-06-11 2008-12-18 Konica Minolta Holdings, Inc. 光電変換素子、光電変換素子の製造方法、イメージセンサおよび放射線画像検出器
JP2009054907A (ja) * 2007-08-29 2009-03-12 Mitsubishi Electric Corp ヘテロ接合素子
JP5636626B2 (ja) * 2007-12-27 2014-12-10 ソニー株式会社 半導体薄膜の形成方法および薄膜半導体装置の製造方法
JP5093673B2 (ja) * 2008-04-17 2012-12-12 独立行政法人産業技術総合研究所 有機薄膜太陽電池
US8080460B2 (en) * 2008-11-26 2011-12-20 Micron Technology, Inc. Methods of forming diodes
JP2009260400A (ja) * 2009-08-11 2009-11-05 Sony Corp 光電変換素子、電子装置および発光素子
WO2011018884A1 (ja) 2009-08-12 2011-02-17 株式会社クラレ 光電変換素子およびその製造方法
KR101844952B1 (ko) * 2011-04-15 2018-04-04 삼성전자주식회사 이미지 센서
JP2013093523A (ja) * 2011-10-27 2013-05-16 Univ Of Tokyo 光電変換素子の製造方法および光電変換素子
JP6070714B2 (ja) * 2012-10-18 2017-02-01 富士通株式会社 光電変換素子及びその製造方法
JP6978775B2 (ja) * 2018-01-05 2021-12-08 国立研究開発法人理化学研究所 光電変換素子、光センサ、発電装置、及び光電変換方法

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