JP2003263892A5 - - Google Patents

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Publication number
JP2003263892A5
JP2003263892A5 JP2002065805A JP2002065805A JP2003263892A5 JP 2003263892 A5 JP2003263892 A5 JP 2003263892A5 JP 2002065805 A JP2002065805 A JP 2002065805A JP 2002065805 A JP2002065805 A JP 2002065805A JP 2003263892 A5 JP2003263892 A5 JP 2003263892A5
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JP
Japan
Prior art keywords
bank
address
data
address signal
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002065805A
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English (en)
Japanese (ja)
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JP2003263892A (ja
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Publication date
Application filed filed Critical
Priority to JP2002065805A priority Critical patent/JP2003263892A/ja
Priority claimed from JP2002065805A external-priority patent/JP2003263892A/ja
Priority to US10/383,633 priority patent/US6906960B2/en
Publication of JP2003263892A publication Critical patent/JP2003263892A/ja
Publication of JP2003263892A5 publication Critical patent/JP2003263892A5/ja
Pending legal-status Critical Current

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JP2002065805A 2002-03-11 2002-03-11 半導体記憶装置 Pending JP2003263892A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002065805A JP2003263892A (ja) 2002-03-11 2002-03-11 半導体記憶装置
US10/383,633 US6906960B2 (en) 2002-03-11 2003-03-10 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002065805A JP2003263892A (ja) 2002-03-11 2002-03-11 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2003263892A JP2003263892A (ja) 2003-09-19
JP2003263892A5 true JP2003263892A5 (enExample) 2005-09-02

Family

ID=29197934

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002065805A Pending JP2003263892A (ja) 2002-03-11 2002-03-11 半導体記憶装置

Country Status (2)

Country Link
US (1) US6906960B2 (enExample)
JP (1) JP2003263892A (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7149841B2 (en) * 2003-03-31 2006-12-12 Micron Technology, Inc. Memory devices with buffered command address bus
US7082075B2 (en) * 2004-03-18 2006-07-25 Micron Technology, Inc. Memory device and method having banks of different sizes
TWI250403B (en) * 2004-11-15 2006-03-01 Sunplus Technology Co Ltd Dram controller and video system
CN100397361C (zh) * 2004-11-23 2008-06-25 凌阳科技股份有限公司 动态随机存取内存控制器与视频系统
US7283418B2 (en) * 2005-07-26 2007-10-16 Micron Technology, Inc. Memory device and method having multiple address, data and command buses
JPWO2007023544A1 (ja) * 2005-08-25 2009-03-26 スパンション エルエルシー 記憶装置、記憶装置の制御方法、および記憶制御装置の制御方法
JP4785492B2 (ja) * 2005-10-20 2011-10-05 川崎マイクロエレクトロニクス株式会社 メモリシステムおよび検索方法
JP4772546B2 (ja) * 2006-03-17 2011-09-14 富士通セミコンダクター株式会社 半導体メモリ、メモリシステムおよびメモリシステムの動作方法
US11010076B2 (en) 2007-03-29 2021-05-18 Violin Systems Llc Memory system with multiple striping of raid groups and method for performing the same
US9632870B2 (en) 2007-03-29 2017-04-25 Violin Memory, Inc. Memory system with multiple striping of raid groups and method for performing the same
US9727452B2 (en) * 2007-12-14 2017-08-08 Virident Systems, Llc Distributing metadata across multiple different disruption regions within an asymmetric memory system
US7813212B2 (en) * 2008-01-17 2010-10-12 Mosaid Technologies Incorporated Nonvolatile memory having non-power of two memory capacity
US8804424B2 (en) * 2011-08-25 2014-08-12 Micron Technology, Inc. Memory with three transistor memory cell device
KR102161278B1 (ko) * 2013-08-07 2020-09-29 에스케이하이닉스 주식회사 액티브 제어 장치 및 이를 포함하는 반도체 장치
KR102782323B1 (ko) * 2017-07-30 2025-03-18 뉴로블레이드, 리미티드. 메모리 기반 분산 프로세서 아키텍처
KR102504614B1 (ko) * 2018-04-27 2023-03-02 에스케이하이닉스 주식회사 반도체 장치
US12474867B2 (en) * 2023-09-21 2025-11-18 Texas Instruments Incorporated Methods, apparatus, and articles of manufacture to interleave data accesses for improved throughput

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3570879B2 (ja) * 1997-07-09 2004-09-29 富士通株式会社 不揮発性半導体記憶装置
JP4047515B2 (ja) 1999-05-10 2008-02-13 株式会社東芝 半導体装置
US6377502B1 (en) * 1999-05-10 2002-04-23 Kabushiki Kaisha Toshiba Semiconductor device that enables simultaneous read and write/erase operation
EP1052646B1 (en) * 1999-05-11 2004-07-14 Fujitsu Limited Non-volatile semiconductor memory device permitting data-read operation performed during data-write/erase operation
JP3530425B2 (ja) 1999-08-20 2004-05-24 Ｎｅｃマイクロシステム株式会社 半導体記憶装置

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