JP2006155710A5 - - Google Patents

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Publication number
JP2006155710A5
JP2006155710A5 JP2004341880A JP2004341880A JP2006155710A5 JP 2006155710 A5 JP2006155710 A5 JP 2006155710A5 JP 2004341880 A JP2004341880 A JP 2004341880A JP 2004341880 A JP2004341880 A JP 2004341880A JP 2006155710 A5 JP2006155710 A5 JP 2006155710A5
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JP
Japan
Prior art keywords
data storage
data
memory device
semiconductor memory
selection circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004341880A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006155710A (ja
JP4646608B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004341880A priority Critical patent/JP4646608B2/ja
Priority claimed from JP2004341880A external-priority patent/JP4646608B2/ja
Priority to US11/272,818 priority patent/US7200025B2/en
Priority to CNB2005101236898A priority patent/CN100570740C/zh
Publication of JP2006155710A publication Critical patent/JP2006155710A/ja
Publication of JP2006155710A5 publication Critical patent/JP2006155710A5/ja
Application granted granted Critical
Publication of JP4646608B2 publication Critical patent/JP4646608B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004341880A 2004-11-26 2004-11-26 半導体記憶装置 Expired - Fee Related JP4646608B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004341880A JP4646608B2 (ja) 2004-11-26 2004-11-26 半導体記憶装置
US11/272,818 US7200025B2 (en) 2004-11-26 2005-11-15 Semiconductor memory device
CNB2005101236898A CN100570740C (zh) 2004-11-26 2005-11-18 半导体存储装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004341880A JP4646608B2 (ja) 2004-11-26 2004-11-26 半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2006155710A JP2006155710A (ja) 2006-06-15
JP2006155710A5 true JP2006155710A5 (enExample) 2007-12-27
JP4646608B2 JP4646608B2 (ja) 2011-03-09

Family

ID=36567208

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004341880A Expired - Fee Related JP4646608B2 (ja) 2004-11-26 2004-11-26 半導体記憶装置

Country Status (3)

Country Link
US (1) US7200025B2 (enExample)
JP (1) JP4646608B2 (enExample)
CN (1) CN100570740C (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4679521B2 (ja) * 2004-07-21 2011-04-27 パナソニック株式会社 半導体記憶装置、書き換え処理方法およびプログラム
JP5028967B2 (ja) * 2006-11-15 2012-09-19 富士通セミコンダクター株式会社 半導体記憶装置および半導体記憶装置の制御方法
US7515498B2 (en) * 2007-02-13 2009-04-07 International Business Machines Corporation Electronic fuse apparatus and methodology including addressable virtual electronic fuses
JP2009087453A (ja) * 2007-09-28 2009-04-23 Sanyo Electric Co Ltd 情報記憶回路
US8275927B2 (en) * 2007-12-31 2012-09-25 Sandisk 3D Llc Storage sub-system for a computer comprising write-once memory devices and write-many memory devices and related method
JP2010146636A (ja) * 2008-12-18 2010-07-01 Toshiba Corp 半導体集積回路装置及びメモリシステム
KR20100079185A (ko) * 2008-12-30 2010-07-08 주식회사 동부하이텍 퓨즈 회로 및 그의 레이아웃 방법
KR101185549B1 (ko) * 2009-12-29 2012-09-24 에스케이하이닉스 주식회사 결함 단위셀의 구제를 위한 리던던시 회로를 포함한 반도체 메모리 장치
US8331126B2 (en) * 2010-06-28 2012-12-11 Qualcomm Incorporated Non-volatile memory with split write and read bitlines
US10579290B2 (en) 2016-03-23 2020-03-03 Winbond Electronics Corp. Option code providing circuit and providing method thereof
JP7185573B2 (ja) * 2019-03-22 2022-12-07 タワー パートナーズ セミコンダクター株式会社 半導体装置
US11164610B1 (en) 2020-06-05 2021-11-02 Qualcomm Incorporated Memory device with built-in flexible double redundancy
US11177010B1 (en) 2020-07-13 2021-11-16 Qualcomm Incorporated Bitcell for data redundancy
WO2022059176A1 (ja) 2020-09-18 2022-03-24 タワー パートナーズ セミコンダクター株式会社 半導体装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63187498A (ja) * 1987-01-28 1988-08-03 Nec Corp 複数回プログラム可能読出し専用メモリ装置
JP2654215B2 (ja) * 1990-01-19 1997-09-17 株式会社東芝 半導体メモリシステム
US5966339A (en) * 1998-06-02 1999-10-12 International Business Machines Corporation Programmable/reprogrammable fuse
US6384664B1 (en) * 2000-10-05 2002-05-07 Texas Instruments Incorporated Differential voltage sense circuit to detect the state of a CMOS process compatible fuses at low power supply voltages
US6594181B1 (en) * 2002-05-10 2003-07-15 Fujitsu Limited System for reading a double-bit memory cell
US7002829B2 (en) * 2003-09-30 2006-02-21 Agere Systems Inc. Apparatus and method for programming a one-time programmable memory device
US7180102B2 (en) * 2003-09-30 2007-02-20 Agere Systems Inc. Method and apparatus for using cobalt silicided polycrystalline silicon for a one time programmable non-volatile semiconductor memory
US7477570B2 (en) * 2004-08-20 2009-01-13 Micron Technology, Inc. Sequential access memory with system and method
JP4675082B2 (ja) * 2004-10-21 2011-04-20 富士通セミコンダクター株式会社 半導体記憶装置および半導体記憶装置の制御方法

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