JP2002093175A5 - - Google Patents

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Publication number
JP2002093175A5
JP2002093175A5 JP2000273596A JP2000273596A JP2002093175A5 JP 2002093175 A5 JP2002093175 A5 JP 2002093175A5 JP 2000273596 A JP2000273596 A JP 2000273596A JP 2000273596 A JP2000273596 A JP 2000273596A JP 2002093175 A5 JP2002093175 A5 JP 2002093175A5
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JP
Japan
Prior art keywords
echo signal
memory cell
cell array
data
read
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000273596A
Other languages
English (en)
Japanese (ja)
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JP2002093175A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2000273596A priority Critical patent/JP2002093175A/ja
Priority claimed from JP2000273596A external-priority patent/JP2002093175A/ja
Priority to US09/946,189 priority patent/US6515938B2/en
Publication of JP2002093175A publication Critical patent/JP2002093175A/ja
Publication of JP2002093175A5 publication Critical patent/JP2002093175A5/ja
Pending legal-status Critical Current

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JP2000273596A 2000-09-08 2000-09-08 半導体メモリ装置 Pending JP2002093175A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000273596A JP2002093175A (ja) 2000-09-08 2000-09-08 半導体メモリ装置
US09/946,189 US6515938B2 (en) 2000-09-08 2001-09-04 Semiconductor memory device having an echo signal generating circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000273596A JP2002093175A (ja) 2000-09-08 2000-09-08 半導体メモリ装置

Publications (2)

Publication Number Publication Date
JP2002093175A JP2002093175A (ja) 2002-03-29
JP2002093175A5 true JP2002093175A5 (enExample) 2005-05-19

Family

ID=18759507

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000273596A Pending JP2002093175A (ja) 2000-09-08 2000-09-08 半導体メモリ装置

Country Status (2)

Country Link
US (1) US6515938B2 (enExample)
JP (1) JP2002093175A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6842395B2 (en) * 2001-11-05 2005-01-11 Matsushira Electric Industrial Co., Ltd. Semiconductor memory card, method of controlling the same and interface apparatus for semiconductor memory card
KR100915811B1 (ko) * 2006-12-07 2009-09-07 주식회사 하이닉스반도체 반도체 메모리 장치의 데이터 입출력 제어 신호 생성 회로
JP5562329B2 (ja) * 2008-07-01 2014-07-30 エルエスアイ コーポレーション フラッシュ・メモリ・コントローラとフラッシュ・メモリ・アレイの間でインタフェースをとるための方法および装置
JP5266589B2 (ja) * 2009-05-14 2013-08-21 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
US9281024B2 (en) 2014-04-17 2016-03-08 International Business Machines Corporation Write/read priority blocking scheme using parallel static address decode path
CN112542193B (zh) * 2020-12-30 2023-07-25 芯天下技术股份有限公司 一种高速读取数据的spi接口的flash存储器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0214490A (ja) * 1988-06-30 1990-01-18 Ricoh Co Ltd 半導体メモリ装置
US5724288A (en) 1995-08-30 1998-03-03 Micron Technology, Inc. Data communication for memory
KR20010031212A (ko) * 1997-10-20 2001-04-16 우에하라 아끼라 2-페녹시아닐린 유도체
US5920511A (en) 1997-12-22 1999-07-06 Samsung Electronics Co., Ltd. High-speed data input circuit for a synchronous memory device
KR100306966B1 (ko) * 1998-08-04 2001-11-30 윤종용 동기형버스트반도체메모리장치
JP2000228084A (ja) * 1999-02-05 2000-08-15 Mitsubishi Electric Corp 電圧発生回路

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