JP2003258203A5 - - Google Patents

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Publication number
JP2003258203A5
JP2003258203A5 JP2002054439A JP2002054439A JP2003258203A5 JP 2003258203 A5 JP2003258203 A5 JP 2003258203A5 JP 2002054439 A JP2002054439 A JP 2002054439A JP 2002054439 A JP2002054439 A JP 2002054439A JP 2003258203 A5 JP2003258203 A5 JP 2003258203A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2002054439A
Other versions
JP2003258203A (ja
JP4865978B2 (ja
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Publication date
Application filed filed Critical
Priority claimed from JP2002054439A external-priority patent/JP4865978B2/ja
Priority to JP2002054439A priority Critical patent/JP4865978B2/ja
Priority to US10/372,275 priority patent/US7763545B2/en
Priority to EP03251108A priority patent/EP1341220A3/en
Priority to TW092104069A priority patent/TWI233160B/zh
Priority to KR1020030012277A priority patent/KR100851480B1/ko
Publication of JP2003258203A publication Critical patent/JP2003258203A/ja
Publication of JP2003258203A5 publication Critical patent/JP2003258203A5/ja
Publication of JP4865978B2 publication Critical patent/JP4865978B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002054439A 2002-02-28 2002-02-28 半導体装置の製造方法 Expired - Fee Related JP4865978B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2002054439A JP4865978B2 (ja) 2002-02-28 2002-02-28 半導体装置の製造方法
US10/372,275 US7763545B2 (en) 2002-02-28 2003-02-25 Semiconductor device manufacturing method
EP03251108A EP1341220A3 (en) 2002-02-28 2003-02-25 Semiconductor device manufacturing method
TW092104069A TWI233160B (en) 2002-02-28 2003-02-26 Semiconductor device manufacturing method
KR1020030012277A KR100851480B1 (ko) 2002-02-28 2003-02-27 반도체 장치의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002054439A JP4865978B2 (ja) 2002-02-28 2002-02-28 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2003258203A JP2003258203A (ja) 2003-09-12
JP2003258203A5 true JP2003258203A5 (ja) 2005-08-11
JP4865978B2 JP4865978B2 (ja) 2012-02-01

Family

ID=27678568

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002054439A Expired - Fee Related JP4865978B2 (ja) 2002-02-28 2002-02-28 半導体装置の製造方法

Country Status (5)

Country Link
US (1) US7763545B2 (ja)
EP (1) EP1341220A3 (ja)
JP (1) JP4865978B2 (ja)
KR (1) KR100851480B1 (ja)
TW (1) TWI233160B (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006243579A (ja) * 2005-03-07 2006-09-14 Seiko Epson Corp 電気光学装置及びその製造方法、並びに電子機器
JP2007036126A (ja) * 2005-07-29 2007-02-08 Fujitsu Ltd 半導体装置とその製造方法
KR100965502B1 (ko) 2005-08-15 2010-06-24 후지쯔 세미컨덕터 가부시키가이샤 반도체 장치와 그 제조 방법
JP2016037625A (ja) * 2014-08-06 2016-03-22 キヤノン株式会社 エッチング方法及び液体吐出ヘッド用基板の製造方法

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DE4107006A1 (de) * 1991-03-05 1992-09-10 Siemens Ag Verfahren zum anisotropen trockenaetzen von aluminium bzw. aluminiumlegierungen enthaltenden leiterbahnebenen in integrierten halbleiterschaltungen
KR970004484B1 (ko) * 1993-12-16 1997-03-28 금성일렉트론 주식회사 반도체 소자의 ldd mosfet 제조방법
JP3460347B2 (ja) * 1994-03-30 2003-10-27 松下電器産業株式会社 半導体装置の製造方法
JP3122579B2 (ja) * 1994-07-27 2001-01-09 シャープ株式会社 Ｐｔ膜のエッチング方法
JP2956485B2 (ja) * 1994-09-07 1999-10-04 日本電気株式会社 半導体装置の製造方法
US5605637A (en) * 1994-12-15 1997-02-25 Applied Materials Inc. Adjustable dc bias control in a plasma reactor
JP2953974B2 (ja) * 1995-02-03 1999-09-27 松下電子工業株式会社 半導体装置の製造方法
KR100413649B1 (ko) 1996-01-26 2004-04-28 마츠시타 덴끼 산교 가부시키가이샤 반도체장치의제조방법
JP3108374B2 (ja) * 1996-01-26 2000-11-13 松下電子工業株式会社 半導体装置の製造方法
TW365691B (en) * 1997-02-05 1999-08-01 Samsung Electronics Co Ltd Method for etching Pt film of semiconductor device
JP3024747B2 (ja) * 1997-03-05 2000-03-21 日本電気株式会社 半導体メモリの製造方法
KR100252889B1 (ko) * 1997-11-14 2000-04-15 김영환 백금식각방법
US6635185B2 (en) * 1997-12-31 2003-10-21 Alliedsignal Inc. Method of etching and cleaning using fluorinated carbonyl compounds
JP2002510146A (ja) 1998-01-13 2002-04-02 アプライド マテリアルズ インコーポレイテッド 異方性プラチナプロファイルのエッチング方法
US6265318B1 (en) * 1998-01-13 2001-07-24 Applied Materials, Inc. Iridium etchant methods for anisotropic profile
KR100269323B1 (ko) * 1998-01-16 2000-10-16 윤종용 반도체장치의백금막식각방법
US6027861A (en) * 1998-03-20 2000-02-22 Taiwan Semiconductor Manufacturing Company VLSIC patterning process
KR100319879B1 (ko) 1998-05-28 2002-08-24 삼성전자 주식회사 백금족금속막식각방법을이용한커패시터의하부전극형성방법
JP3367600B2 (ja) * 1998-06-08 2003-01-14 シャープ株式会社 誘電体薄膜素子の製造方法
JP2000133633A (ja) 1998-09-09 2000-05-12 Texas Instr Inc <Ti> ハ―ドマスクおよびプラズマ活性化エッチャントを使用した材料のエッチング方法
KR100300053B1 (ko) 1998-09-30 2001-10-19 김영환 반도체소자의자기정렬콘택홀형성방법
JP4051785B2 (ja) * 1998-11-24 2008-02-27 ソニー株式会社 プラズマエッチング法
JP2001036024A (ja) 1999-07-16 2001-02-09 Nec Corp 容量及びその製造方法
US6548414B2 (en) * 1999-09-14 2003-04-15 Infineon Technologies Ag Method of plasma etching thin films of difficult to dry etch materials
US6504203B2 (en) * 2001-02-16 2003-01-07 International Business Machines Corporation Method of forming a metal-insulator-metal capacitor for dual damascene interconnect processing and the device so formed
JP2003257942A (ja) * 2002-02-28 2003-09-12 Fujitsu Ltd 半導体装置の製造方法

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