JP2003224070A - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法Info
- Publication number
- JP2003224070A JP2003224070A JP2001367099A JP2001367099A JP2003224070A JP 2003224070 A JP2003224070 A JP 2003224070A JP 2001367099 A JP2001367099 A JP 2001367099A JP 2001367099 A JP2001367099 A JP 2001367099A JP 2003224070 A JP2003224070 A JP 2003224070A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- crystalline semiconductor
- laser light
- film
- metal element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 143
- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 37
- 238000010438 heat treatment Methods 0.000 claims abstract description 33
- 230000001678 irradiating effect Effects 0.000 claims abstract description 15
- 239000007790 solid phase Substances 0.000 claims abstract description 7
- 239000013078 crystal Substances 0.000 claims description 69
- 239000002184 metal Substances 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 31
- 238000002425 crystallisation Methods 0.000 claims description 16
- 239000011521 glass Substances 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 230000008025 crystallization Effects 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 230000008018 melting Effects 0.000 claims description 12
- 238000002844 melting Methods 0.000 claims description 12
- 238000005247 gettering Methods 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 230000002040 relaxant effect Effects 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 238000011282 treatment Methods 0.000 abstract description 10
- 238000002407 reforming Methods 0.000 abstract description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 13
- 229910021417 amorphous silicon Inorganic materials 0.000 description 10
- 230000005669 field effect Effects 0.000 description 10
- 238000012545 processing Methods 0.000 description 10
- 230000007547 defect Effects 0.000 description 9
- 230000010355 oscillation Effects 0.000 description 9
- 239000012535 impurity Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
- 238000004088 simulation Methods 0.000 description 6
- 238000001069 Raman spectroscopy Methods 0.000 description 5
- 238000000137 annealing Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000013507 mapping Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000013532 laser treatment Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 241000283986 Lepus Species 0.000 description 3
- 238000001994 activation Methods 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000001237 Raman spectrum Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- LFVGISIMTYGQHF-UHFFFAOYSA-N ammonium dihydrogen phosphate Chemical compound [NH4+].OP(O)([O-])=O LFVGISIMTYGQHF-UHFFFAOYSA-N 0.000 description 2
- 229910000387 ammonium dihydrogen phosphate Inorganic materials 0.000 description 2
- 201000009310 astigmatism Diseases 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 230000010365 information processing Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 235000019837 monoammonium phosphate Nutrition 0.000 description 2
- 235000019796 monopotassium phosphate Nutrition 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- PILOURHZNVHRME-UHFFFAOYSA-N [Na].[Ba] Chemical compound [Na].[Ba] PILOURHZNVHRME-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000007405 data analysis Methods 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000002524 electron diffraction data Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910000402 monopotassium phosphate Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229940078494 nickel acetate Drugs 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- PJNZPQUBCPKICU-UHFFFAOYSA-N phosphoric acid;potassium Chemical compound [K].OP(O)(O)=O PJNZPQUBCPKICU-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001367099A JP2003224070A (ja) | 2001-11-26 | 2001-11-30 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001360136 | 2001-11-26 | ||
| JP2001-360136 | 2001-11-26 | ||
| JP2001367099A JP2003224070A (ja) | 2001-11-26 | 2001-11-30 | 半導体装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003224070A true JP2003224070A (ja) | 2003-08-08 |
| JP2003224070A5 JP2003224070A5 (enrdf_load_stackoverflow) | 2005-04-28 |
Family
ID=27759305
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001367099A Withdrawn JP2003224070A (ja) | 2001-11-26 | 2001-11-30 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003224070A (enrdf_load_stackoverflow) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005101548A (ja) * | 2003-08-15 | 2005-04-14 | Semiconductor Energy Lab Co Ltd | レーザ照射方法及びそれを用いた半導体装置の作製方法、並びに半導体装置 |
| JP2005311334A (ja) * | 2004-03-26 | 2005-11-04 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2006261180A (ja) * | 2005-03-15 | 2006-09-28 | Hitachi Cable Ltd | 薄膜半導体装置の製造方法 |
| JP2007235118A (ja) * | 2006-02-02 | 2007-09-13 | Semiconductor Energy Lab Co Ltd | 半導体膜の結晶化方法、半導体装置の製造方法、及びレーザ照射装置 |
| JP2012074727A (ja) * | 2004-03-26 | 2012-04-12 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法及びレーザ照射装置 |
| JP2016018816A (ja) * | 2014-07-04 | 2016-02-01 | 富士電機株式会社 | 不純物導入方法、不純物導入装置及び半導体素子の製造方法 |
Citations (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4330363A (en) * | 1980-08-28 | 1982-05-18 | Xerox Corporation | Thermal gradient control for enhanced laser induced crystallization of predefined semiconductor areas |
| JPS62104117A (ja) * | 1985-10-31 | 1987-05-14 | Asahi Glass Co Ltd | 半導体薄膜の製造方法 |
| JPH01173707A (ja) * | 1987-12-28 | 1989-07-10 | Matsushita Electric Ind Co Ltd | レーザアニール方法 |
| JPH02181419A (ja) * | 1989-01-06 | 1990-07-16 | Hitachi Ltd | レーザアニール方法 |
| JPH0897141A (ja) * | 1994-09-22 | 1996-04-12 | A G Technol Kk | 多結晶半導体層の形成方法、多結晶半導体ｔｆｔ、及びビームアニール装置 |
| JPH08195357A (ja) * | 1995-01-13 | 1996-07-30 | Semiconductor Energy Lab Co Ltd | レーザー照射装置 |
| JPH08213316A (ja) * | 1994-09-29 | 1996-08-20 | Semiconductor Energy Lab Co Ltd | 半導体薄膜の作製方法 |
| JPH09312260A (ja) * | 1996-01-19 | 1997-12-02 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
| JPH1131660A (ja) * | 1997-07-14 | 1999-02-02 | Semiconductor Energy Lab Co Ltd | 半導体膜の作製方法及び半導体装置の作製方法 |
| JPH11354442A (ja) * | 1997-06-06 | 1999-12-24 | Semiconductor Energy Lab Co Ltd | 半導体薄膜および半導体装置 |
| JP2000133593A (ja) * | 1998-10-28 | 2000-05-12 | Nec Corp | レーザ照射装置およびレーザ照射方法 |
| JP2000269161A (ja) * | 1999-03-18 | 2000-09-29 | Japan Steel Works Ltd:The | レーザ光照射装置 |
| JP2000323428A (ja) * | 1999-03-08 | 2000-11-24 | Semiconductor Energy Lab Co Ltd | ビームホモジナイザーおよびレーザー照射装置 |
| JP2001144027A (ja) * | 1999-08-13 | 2001-05-25 | Semiconductor Energy Lab Co Ltd | レーザー装置及びレーザーアニール方法並びに半導体装置の作製方法 |
| JP2001250777A (ja) * | 1999-12-28 | 2001-09-14 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2001326178A (ja) * | 2000-03-08 | 2001-11-22 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
| JP2002231655A (ja) * | 2001-01-30 | 2002-08-16 | Ishikawajima Harima Heavy Ind Co Ltd | レーザアニール装置 |
-
2001
- 2001-11-30 JP JP2001367099A patent/JP2003224070A/ja not_active Withdrawn
Patent Citations (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4330363A (en) * | 1980-08-28 | 1982-05-18 | Xerox Corporation | Thermal gradient control for enhanced laser induced crystallization of predefined semiconductor areas |
| JPS62104117A (ja) * | 1985-10-31 | 1987-05-14 | Asahi Glass Co Ltd | 半導体薄膜の製造方法 |
| JPH01173707A (ja) * | 1987-12-28 | 1989-07-10 | Matsushita Electric Ind Co Ltd | レーザアニール方法 |
| JPH02181419A (ja) * | 1989-01-06 | 1990-07-16 | Hitachi Ltd | レーザアニール方法 |
| JPH0897141A (ja) * | 1994-09-22 | 1996-04-12 | A G Technol Kk | 多結晶半導体層の形成方法、多結晶半導体ｔｆｔ、及びビームアニール装置 |
| JPH08213316A (ja) * | 1994-09-29 | 1996-08-20 | Semiconductor Energy Lab Co Ltd | 半導体薄膜の作製方法 |
| JPH08195357A (ja) * | 1995-01-13 | 1996-07-30 | Semiconductor Energy Lab Co Ltd | レーザー照射装置 |
| JPH09312260A (ja) * | 1996-01-19 | 1997-12-02 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
| JPH11354442A (ja) * | 1997-06-06 | 1999-12-24 | Semiconductor Energy Lab Co Ltd | 半導体薄膜および半導体装置 |
| JPH1131660A (ja) * | 1997-07-14 | 1999-02-02 | Semiconductor Energy Lab Co Ltd | 半導体膜の作製方法及び半導体装置の作製方法 |
| JP2000133593A (ja) * | 1998-10-28 | 2000-05-12 | Nec Corp | レーザ照射装置およびレーザ照射方法 |
| JP2000323428A (ja) * | 1999-03-08 | 2000-11-24 | Semiconductor Energy Lab Co Ltd | ビームホモジナイザーおよびレーザー照射装置 |
| JP2000269161A (ja) * | 1999-03-18 | 2000-09-29 | Japan Steel Works Ltd:The | レーザ光照射装置 |
| JP2001144027A (ja) * | 1999-08-13 | 2001-05-25 | Semiconductor Energy Lab Co Ltd | レーザー装置及びレーザーアニール方法並びに半導体装置の作製方法 |
| JP2001250777A (ja) * | 1999-12-28 | 2001-09-14 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2001326178A (ja) * | 2000-03-08 | 2001-11-22 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
| JP2002231655A (ja) * | 2001-01-30 | 2002-08-16 | Ishikawajima Harima Heavy Ind Co Ltd | レーザアニール装置 |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005101548A (ja) * | 2003-08-15 | 2005-04-14 | Semiconductor Energy Lab Co Ltd | レーザ照射方法及びそれを用いた半導体装置の作製方法、並びに半導体装置 |
| JP2005311334A (ja) * | 2004-03-26 | 2005-11-04 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2012074727A (ja) * | 2004-03-26 | 2012-04-12 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法及びレーザ照射装置 |
| US9296068B2 (en) | 2004-03-26 | 2016-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation method and laser irradiation apparatus |
| JP2006261180A (ja) * | 2005-03-15 | 2006-09-28 | Hitachi Cable Ltd | 薄膜半導体装置の製造方法 |
| JP2007235118A (ja) * | 2006-02-02 | 2007-09-13 | Semiconductor Energy Lab Co Ltd | 半導体膜の結晶化方法、半導体装置の製造方法、及びレーザ照射装置 |
| JP2016018816A (ja) * | 2014-07-04 | 2016-02-01 | 富士電機株式会社 | 不純物導入方法、不純物導入装置及び半導体素子の製造方法 |
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