JP2003218065A5 - - Google Patents
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- Publication number
- JP2003218065A5 JP2003218065A5 JP2002329878A JP2002329878A JP2003218065A5 JP 2003218065 A5 JP2003218065 A5 JP 2003218065A5 JP 2002329878 A JP2002329878 A JP 2002329878A JP 2002329878 A JP2002329878 A JP 2002329878A JP 2003218065 A5 JP2003218065 A5 JP 2003218065A5
- Authority
- JP
- Japan
- Prior art keywords
- nitride semiconductor
- main surface
- substrate
- surface side
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims 15
- 150000004767 nitrides Chemical class 0.000 claims 10
- 239000000758 substrate Substances 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 5
- 238000000034 method Methods 0.000 claims 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 2
- 229910002601 GaN Inorganic materials 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 229910052596 spinel Inorganic materials 0.000 claims 1
- 239000011029 spinel Substances 0.000 claims 1
- 239000011787 zinc oxide Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002329878A JP4244618B2 (ja) | 2002-11-13 | 2002-11-13 | 窒化物半導体素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002329878A JP4244618B2 (ja) | 2002-11-13 | 2002-11-13 | 窒化物半導体素子の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34593797A Division JP3604550B2 (ja) | 1997-12-16 | 1997-12-16 | 窒化物半導体素子の製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008036300A Division JP5271563B2 (ja) | 2008-02-18 | 2008-02-18 | 窒化物半導体素子の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003218065A JP2003218065A (ja) | 2003-07-31 |
| JP2003218065A5 true JP2003218065A5 (enExample) | 2005-06-23 |
| JP4244618B2 JP4244618B2 (ja) | 2009-03-25 |
Family
ID=27655810
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002329878A Expired - Lifetime JP4244618B2 (ja) | 2002-11-13 | 2002-11-13 | 窒化物半導体素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4244618B2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4334321B2 (ja) | 2003-11-05 | 2009-09-30 | シャープ株式会社 | 窒化物半導体発光ダイオードチップの作製方法 |
| JP2006086516A (ja) | 2004-08-20 | 2006-03-30 | Showa Denko Kk | 半導体発光素子の製造方法 |
| JP4346598B2 (ja) | 2005-10-06 | 2009-10-21 | 株式会社東芝 | 化合物半導体素子及びその製造方法 |
| US7557430B2 (en) * | 2006-05-25 | 2009-07-07 | Skyworks Solutions, Inc. | Semiconductor seal ring |
| JP5556657B2 (ja) * | 2008-05-14 | 2014-07-23 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体発光素子の製造方法及びｉｉｉ族窒化物半導体発光素子、並びにランプ |
| JP2010103424A (ja) * | 2008-10-27 | 2010-05-06 | Showa Denko Kk | 半導体発光素子の製造方法 |
| JP5573192B2 (ja) | 2010-01-22 | 2014-08-20 | 三菱電機株式会社 | 半導体装置の製造方法 |
-
2002
- 2002-11-13 JP JP2002329878A patent/JP4244618B2/ja not_active Expired - Lifetime
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