JP2004507888A5 - - Google Patents
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- Publication number
- JP2004507888A5 JP2004507888A5 JP2002520314A JP2002520314A JP2004507888A5 JP 2004507888 A5 JP2004507888 A5 JP 2004507888A5 JP 2002520314 A JP2002520314 A JP 2002520314A JP 2002520314 A JP2002520314 A JP 2002520314A JP 2004507888 A5 JP2004507888 A5 JP 2004507888A5
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- layer
- gate insulator
- gallium
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/638,130 US6445015B1 (en) | 2000-05-04 | 2000-08-11 | Metal sulfide semiconductor transistor devices |
| PCT/US2001/025259 WO2002015285A1 (en) | 2000-08-11 | 2001-08-10 | Metal sulfide semiconductor transistor devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004507888A JP2004507888A (ja) | 2004-03-11 |
| JP2004507888A5 true JP2004507888A5 (enExample) | 2005-09-22 |
Family
ID=24558765
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002520314A Pending JP2004507888A (ja) | 2000-08-11 | 2001-08-10 | 金属硫化物半導体トランジスタ素子 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6445015B1 (enExample) |
| EP (1) | EP1312123A4 (enExample) |
| JP (1) | JP2004507888A (enExample) |
| KR (1) | KR20030027018A (enExample) |
| AU (1) | AU2001284850A1 (enExample) |
| WO (1) | WO2002015285A1 (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6936900B1 (en) | 2000-05-04 | 2005-08-30 | Osemi, Inc. | Integrated transistor devices |
| US6989556B2 (en) * | 2002-06-06 | 2006-01-24 | Osemi, Inc. | Metal oxide compound semiconductor integrated transistor devices with a gate insulator structure |
| US7187045B2 (en) * | 2002-07-16 | 2007-03-06 | Osemi, Inc. | Junction field effect metal oxide compound semiconductor integrated transistor devices |
| US6919251B2 (en) * | 2002-07-31 | 2005-07-19 | Texas Instruments Incorporated | Gate dielectric and method |
| US6791125B2 (en) * | 2002-09-30 | 2004-09-14 | Freescale Semiconductor, Inc. | Semiconductor device structures which utilize metal sulfides |
| US7071519B2 (en) * | 2003-01-08 | 2006-07-04 | Texas Instruments Incorporated | Control of high-k gate dielectric film composition profile for property optimization |
| KR100885910B1 (ko) * | 2003-04-30 | 2009-02-26 | 삼성전자주식회사 | 게이트 적층물에 ｏｈａ막을 구비하는 비 휘발성 반도체메모리 장치 및 그 제조방법 |
| US20070138506A1 (en) * | 2003-11-17 | 2007-06-21 | Braddock Walter D | Nitride metal oxide semiconductor integrated transistor devices |
| WO2005061756A1 (en) * | 2003-12-09 | 2005-07-07 | Osemi, Inc. | High temperature vacuum evaporation apparatus |
| WO2007146859A1 (en) * | 2006-06-12 | 2007-12-21 | Osemi, Inc. | Integrated transistor devices |
| US9997325B2 (en) | 2008-07-17 | 2018-06-12 | Verity Instruments, Inc. | Electron beam exciter for use in chemical analysis in processing systems |
| EP2306497B1 (en) * | 2009-10-02 | 2012-06-06 | Imec | Method for manufacturing a low defect interface between a dielectric and a III/V compound |
| KR101106196B1 (ko) * | 2009-12-28 | 2012-01-30 | 김선기 | 지중 관로보호용 골재타설 격벽장치 |
| US8366967B2 (en) * | 2010-02-22 | 2013-02-05 | Inpria Corporation | Metal chalcogenide aqueous precursors and processes to form metal chalcogenide films |
| US9245742B2 (en) * | 2013-12-18 | 2016-01-26 | Asm Ip Holding B.V. | Sulfur-containing thin films |
| US9478419B2 (en) | 2013-12-18 | 2016-10-25 | Asm Ip Holding B.V. | Sulfur-containing thin films |
| US10490475B2 (en) | 2015-06-03 | 2019-11-26 | Asm Ip Holding B.V. | Methods for semiconductor passivation by nitridation after oxide removal |
| US9711350B2 (en) | 2015-06-03 | 2017-07-18 | Asm Ip Holding B.V. | Methods for semiconductor passivation by nitridation |
| US9711396B2 (en) | 2015-06-16 | 2017-07-18 | Asm Ip Holding B.V. | Method for forming metal chalcogenide thin films on a semiconductor device |
| US9741815B2 (en) | 2015-06-16 | 2017-08-22 | Asm Ip Holding B.V. | Metal selenide and metal telluride thin films for semiconductor device applications |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4331737A (en) | 1978-04-01 | 1982-05-25 | Zaidan Hojin Handotai Kenkyu Shinkokai | Oxynitride film and its manufacturing method |
| JPS607720A (ja) | 1983-06-28 | 1985-01-16 | Nec Corp | エピタキシヤル成長方法 |
| US4935789A (en) | 1985-02-19 | 1990-06-19 | Eaton Corporation | Buried channel FET with lateral growth over amorphous region |
| US4802180A (en) | 1986-04-30 | 1989-01-31 | American Telephone And Telegraph Company, At&T Bell Laboratories | Growth of congruently melting gadolinium scandium gallium garnet |
| US4745082A (en) | 1986-06-12 | 1988-05-17 | Ford Microelectronics, Inc. | Method of making a self-aligned MESFET using a substitutional gate with side walls |
| US4843450A (en) | 1986-06-16 | 1989-06-27 | International Business Machines Corporation | Compound semiconductor interface control |
| US4859253A (en) | 1988-07-20 | 1989-08-22 | International Business Machines Corporation | Method for passivating a compound semiconductor surface and device having improved semiconductor-insulator interface |
| US5124762A (en) | 1990-12-31 | 1992-06-23 | Honeywell Inc. | Gaas heterostructure metal-insulator-semiconductor integrated circuit technology |
| US5550089A (en) | 1994-03-23 | 1996-08-27 | Lucent Technologies Inc. | Gallium oxide coatings for optoelectronic devices using electron beam evaporation of a high purity single crystal Gd3 Ga5 O12 source. |
| US5451548A (en) | 1994-03-23 | 1995-09-19 | At&T Corp. | Electron beam deposition of gallium oxide thin films using a single high purity crystal source |
| US5760462A (en) * | 1995-01-06 | 1998-06-02 | President And Fellows Of Harvard College | Metal, passivating layer, semiconductor, field-effect transistor |
| US5767388A (en) | 1995-04-26 | 1998-06-16 | Siemens Aktiengesellschaft | Methane sensor and method for operating a sensor |
| US5597768A (en) | 1996-03-21 | 1997-01-28 | Motorola, Inc. | Method of forming a Ga2 O3 dielectric layer |
| US5665658A (en) | 1996-03-21 | 1997-09-09 | Motorola | Method of forming a dielectric layer structure |
| US5693565A (en) | 1996-07-15 | 1997-12-02 | Dow Corning Corporation | Semiconductor chips suitable for known good die testing |
| JP3604835B2 (ja) | 1996-09-11 | 2004-12-22 | 大和製罐株式会社 | 胴部に凹凸模様をもつアルミニウムｄｉ缶の製造方法 |
| US5920105A (en) * | 1996-09-19 | 1999-07-06 | Fujitsu Limited | Compound semiconductor field effect transistor having an amorphous gas gate insulation layer |
| US6030453A (en) | 1997-03-04 | 2000-02-29 | Motorola, Inc. | III-V epitaxial wafer production |
| JP3734586B2 (ja) * | 1997-03-05 | 2006-01-11 | 富士通株式会社 | 半導体装置及びその製造方法 |
| US6207976B1 (en) | 1997-12-17 | 2001-03-27 | Fujitsu Limited | Semiconductor device with ohmic contacts on compound semiconductor and manufacture thereof |
| US5945718A (en) | 1998-02-12 | 1999-08-31 | Motorola Inc. | Self-aligned metal-oxide-compound semiconductor device and method of fabrication |
| US6094295A (en) | 1998-02-12 | 2000-07-25 | Motorola, Inc. | Ultraviolet transmitting oxide with metallic oxide phase and method of fabrication |
| US6150677A (en) | 1998-02-19 | 2000-11-21 | Sumitomo Electric Industries, Ltd. | Method of crystal growth of compound semiconductor, compound semiconductor device and method of manufacturing the device |
| US6006582A (en) | 1998-03-17 | 1999-12-28 | Advanced Technology Materials, Inc. | Hydrogen sensor utilizing rare earth metal thin film detection element |
| JP3850580B2 (ja) | 1999-03-30 | 2006-11-29 | 株式会社東芝 | 半導体装置 |
-
2000
- 2000-08-11 US US09/638,130 patent/US6445015B1/en not_active Expired - Fee Related
-
2001
- 2001-08-10 JP JP2002520314A patent/JP2004507888A/ja active Pending
- 2001-08-10 AU AU2001284850A patent/AU2001284850A1/en not_active Abandoned
- 2001-08-10 KR KR10-2003-7001950A patent/KR20030027018A/ko not_active Abandoned
- 2001-08-10 EP EP01963936A patent/EP1312123A4/en not_active Withdrawn
- 2001-08-10 WO PCT/US2001/025259 patent/WO2002015285A1/en not_active Ceased
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