JP2004507081A5 - - Google Patents
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- Publication number
- JP2004507081A5 JP2004507081A5 JP2002520272A JP2002520272A JP2004507081A5 JP 2004507081 A5 JP2004507081 A5 JP 2004507081A5 JP 2002520272 A JP2002520272 A JP 2002520272A JP 2002520272 A JP2002520272 A JP 2002520272A JP 2004507081 A5 JP2004507081 A5 JP 2004507081A5
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- layer
- compound semiconductor
- gate insulator
- oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012212 insulator Substances 0.000 claims 31
- 239000004065 semiconductor Substances 0.000 claims 30
- 150000001875 compounds Chemical class 0.000 claims 24
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 17
- 229910052733 gallium Inorganic materials 0.000 claims 17
- 229910052760 oxygen Inorganic materials 0.000 claims 17
- 239000001301 oxygen Substances 0.000 claims 17
- 230000005669 field effect Effects 0.000 claims 12
- 229910052761 rare earth metal Inorganic materials 0.000 claims 12
- 239000007943 implant Substances 0.000 claims 9
- 230000000295 complement effect Effects 0.000 claims 8
- 239000003870 refractory metal Substances 0.000 claims 8
- 229910044991 metal oxide Inorganic materials 0.000 claims 5
- -1 metal-oxide compound Chemical class 0.000 claims 5
- 238000000151 deposition Methods 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- 238000001704 evaporation Methods 0.000 claims 3
- 229910052751 metal Inorganic materials 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- 239000000203 mixture Substances 0.000 claims 3
- 229910052721 tungsten Inorganic materials 0.000 claims 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 2
- XCZLSTLZPIRTRY-UHFFFAOYSA-N oxogallium Chemical group [Ga]=O XCZLSTLZPIRTRY-UHFFFAOYSA-N 0.000 claims 2
- 238000004151 rapid thermal annealing Methods 0.000 claims 2
- 125000006850 spacer group Chemical group 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 238000000137 annealing Methods 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/636,484 US6936900B1 (en) | 2000-05-04 | 2000-08-10 | Integrated transistor devices |
| PCT/US2001/025150 WO2002015233A2 (en) | 2000-08-10 | 2001-08-10 | Integrated transistor devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004507081A JP2004507081A (ja) | 2004-03-04 |
| JP2004507081A5 true JP2004507081A5 (enExample) | 2005-03-03 |
Family
ID=24552107
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002520272A Pending JP2004507081A (ja) | 2000-08-10 | 2001-08-10 | 集積トランジスタ素子 |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP1312122A4 (enExample) |
| JP (1) | JP2004507081A (enExample) |
| KR (1) | KR20030027017A (enExample) |
| AU (1) | AU2001288239A1 (enExample) |
| WO (1) | WO2002015233A2 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6936900B1 (en) | 2000-05-04 | 2005-08-30 | Osemi, Inc. | Integrated transistor devices |
| US6756320B2 (en) * | 2002-01-18 | 2004-06-29 | Freescale Semiconductor, Inc. | Method of forming article comprising an oxide layer on a GaAs-based semiconductor structure |
| AU2003217189A1 (en) * | 2002-01-22 | 2003-09-02 | Massachusetts Institute Of Technology | A method of fabrication for iii-v semiconductor surface passivation |
| US7187045B2 (en) | 2002-07-16 | 2007-03-06 | Osemi, Inc. | Junction field effect metal oxide compound semiconductor integrated transistor devices |
| US7382001B2 (en) * | 2004-01-23 | 2008-06-03 | International Rectifier Corporation | Enhancement mode III-nitride FET |
| US7250627B2 (en) * | 2004-03-12 | 2007-07-31 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
| JP7067702B2 (ja) * | 2017-06-30 | 2022-05-16 | 国立研究開発法人物質・材料研究機構 | 窒化ガリウム系の半導体装置及びその製造方法 |
| CN116072707B (zh) * | 2023-02-08 | 2024-07-26 | 杭州合盛微电子有限公司 | 一种含稀土栅介质层的平面型SiC MOSFET及其制造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5962883A (en) * | 1994-03-23 | 1999-10-05 | Lucent Technologies Inc. | Article comprising an oxide layer on a GaAs-based semiconductor body |
| US5665658A (en) * | 1996-03-21 | 1997-09-09 | Motorola | Method of forming a dielectric layer structure |
| US5945718A (en) * | 1998-02-12 | 1999-08-31 | Motorola Inc. | Self-aligned metal-oxide-compound semiconductor device and method of fabrication |
-
2001
- 2001-08-10 EP EP01967960A patent/EP1312122A4/en not_active Withdrawn
- 2001-08-10 AU AU2001288239A patent/AU2001288239A1/en not_active Abandoned
- 2001-08-10 JP JP2002520272A patent/JP2004507081A/ja active Pending
- 2001-08-10 WO PCT/US2001/025150 patent/WO2002015233A2/en not_active Ceased
- 2001-08-10 KR KR10-2003-7001947A patent/KR20030027017A/ko not_active Ceased
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