KR20030027017A - 집적형 트랜지스터 디바이스 - Google Patents

집적형 트랜지스터 디바이스 Download PDF

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Publication number
KR20030027017A
KR20030027017A KR10-2003-7001947A KR20037001947A KR20030027017A KR 20030027017 A KR20030027017 A KR 20030027017A KR 20037001947 A KR20037001947 A KR 20037001947A KR 20030027017 A KR20030027017 A KR 20030027017A
Authority
KR
South Korea
Prior art keywords
layer
compound semiconductor
gallium
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR10-2003-7001947A
Other languages
English (en)
Korean (ko)
Inventor
월터 데이비드 4세 브래드독
Original Assignee
오세미 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/636,484 external-priority patent/US6936900B1/en
Application filed by 오세미 인코포레이티드 filed Critical 오세미 인코포레이티드
Publication of KR20030027017A publication Critical patent/KR20030027017A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/801—FETs having heterojunction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
KR10-2003-7001947A 2000-08-10 2001-08-10 집적형 트랜지스터 디바이스 Ceased KR20030027017A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/636,484 US6936900B1 (en) 2000-05-04 2000-08-10 Integrated transistor devices
US09/636,484 2000-08-10
PCT/US2001/025150 WO2002015233A2 (en) 2000-08-10 2001-08-10 Integrated transistor devices

Publications (1)

Publication Number Publication Date
KR20030027017A true KR20030027017A (ko) 2003-04-03

Family

ID=24552107

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2003-7001947A Ceased KR20030027017A (ko) 2000-08-10 2001-08-10 집적형 트랜지스터 디바이스

Country Status (5)

Country Link
EP (1) EP1312122A4 (enExample)
JP (1) JP2004507081A (enExample)
KR (1) KR20030027017A (enExample)
AU (1) AU2001288239A1 (enExample)
WO (1) WO2002015233A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100796043B1 (ko) * 2004-01-23 2008-01-21 인터내쇼널 렉티파이어 코포레이션 증가형 모드 ⅲ-질화물 디바이스

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6936900B1 (en) 2000-05-04 2005-08-30 Osemi, Inc. Integrated transistor devices
US6756320B2 (en) * 2002-01-18 2004-06-29 Freescale Semiconductor, Inc. Method of forming article comprising an oxide layer on a GaAs-based semiconductor structure
AU2003217189A1 (en) * 2002-01-22 2003-09-02 Massachusetts Institute Of Technology A method of fabrication for iii-v semiconductor surface passivation
US7187045B2 (en) 2002-07-16 2007-03-06 Osemi, Inc. Junction field effect metal oxide compound semiconductor integrated transistor devices
US7250627B2 (en) * 2004-03-12 2007-07-31 Hewlett-Packard Development Company, L.P. Semiconductor device
JP7067702B2 (ja) * 2017-06-30 2022-05-16 国立研究開発法人物質・材料研究機構 窒化ガリウム系の半導体装置及びその製造方法
CN116072707B (zh) * 2023-02-08 2024-07-26 杭州合盛微电子有限公司 一种含稀土栅介质层的平面型SiC MOSFET及其制造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5962883A (en) * 1994-03-23 1999-10-05 Lucent Technologies Inc. Article comprising an oxide layer on a GaAs-based semiconductor body
US5665658A (en) * 1996-03-21 1997-09-09 Motorola Method of forming a dielectric layer structure
US5945718A (en) * 1998-02-12 1999-08-31 Motorola Inc. Self-aligned metal-oxide-compound semiconductor device and method of fabrication

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100796043B1 (ko) * 2004-01-23 2008-01-21 인터내쇼널 렉티파이어 코포레이션 증가형 모드 ⅲ-질화물 디바이스

Also Published As

Publication number Publication date
WO2002015233A2 (en) 2002-02-21
JP2004507081A (ja) 2004-03-04
AU2001288239A1 (en) 2002-02-25
EP1312122A4 (en) 2006-08-02
WO2002015233A3 (en) 2002-06-27
EP1312122A2 (en) 2003-05-21

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