KR20030027018A - 금속 황화물 반도체 트랜지스터 디바이스 - Google Patents

금속 황화물 반도체 트랜지스터 디바이스 Download PDF

Info

Publication number
KR20030027018A
KR20030027018A KR10-2003-7001950A KR20037001950A KR20030027018A KR 20030027018 A KR20030027018 A KR 20030027018A KR 20037001950 A KR20037001950 A KR 20037001950A KR 20030027018 A KR20030027018 A KR 20030027018A
Authority
KR
South Korea
Prior art keywords
layer
compound semiconductor
gallium
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR10-2003-7001950A
Other languages
English (en)
Korean (ko)
Inventor
월터 데이비드 4세 브래드독
Original Assignee
오세미 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오세미 인코포레이티드 filed Critical 오세미 인코포레이티드
Publication of KR20030027018A publication Critical patent/KR20030027018A/ko
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/801—FETs having heterojunction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/051—Manufacture or treatment of FETs having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
  • Junction Field-Effect Transistors (AREA)
KR10-2003-7001950A 2000-08-11 2001-08-10 금속 황화물 반도체 트랜지스터 디바이스 Abandoned KR20030027018A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/638,130 US6445015B1 (en) 2000-05-04 2000-08-11 Metal sulfide semiconductor transistor devices
US09/638,130 2000-08-11
PCT/US2001/025259 WO2002015285A1 (en) 2000-08-11 2001-08-10 Metal sulfide semiconductor transistor devices

Publications (1)

Publication Number Publication Date
KR20030027018A true KR20030027018A (ko) 2003-04-03

Family

ID=24558765

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2003-7001950A Abandoned KR20030027018A (ko) 2000-08-11 2001-08-10 금속 황화물 반도체 트랜지스터 디바이스

Country Status (6)

Country Link
US (1) US6445015B1 (enExample)
EP (1) EP1312123A4 (enExample)
JP (1) JP2004507888A (enExample)
KR (1) KR20030027018A (enExample)
AU (1) AU2001284850A1 (enExample)
WO (1) WO2002015285A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101106196B1 (ko) * 2009-12-28 2012-01-30 김선기 지중 관로보호용 골재타설 격벽장치

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6936900B1 (en) 2000-05-04 2005-08-30 Osemi, Inc. Integrated transistor devices
US6989556B2 (en) * 2002-06-06 2006-01-24 Osemi, Inc. Metal oxide compound semiconductor integrated transistor devices with a gate insulator structure
US7187045B2 (en) * 2002-07-16 2007-03-06 Osemi, Inc. Junction field effect metal oxide compound semiconductor integrated transistor devices
US6919251B2 (en) * 2002-07-31 2005-07-19 Texas Instruments Incorporated Gate dielectric and method
US6791125B2 (en) * 2002-09-30 2004-09-14 Freescale Semiconductor, Inc. Semiconductor device structures which utilize metal sulfides
US7071519B2 (en) * 2003-01-08 2006-07-04 Texas Instruments Incorporated Control of high-k gate dielectric film composition profile for property optimization
KR100885910B1 (ko) * 2003-04-30 2009-02-26 삼성전자주식회사 게이트 적층물에 ｏｈａ막을 구비하는 비 휘발성 반도체메모리 장치 및 그 제조방법
US20070138506A1 (en) * 2003-11-17 2007-06-21 Braddock Walter D Nitride metal oxide semiconductor integrated transistor devices
WO2005061756A1 (en) * 2003-12-09 2005-07-07 Osemi, Inc. High temperature vacuum evaporation apparatus
WO2007146859A1 (en) * 2006-06-12 2007-12-21 Osemi, Inc. Integrated transistor devices
US9997325B2 (en) 2008-07-17 2018-06-12 Verity Instruments, Inc. Electron beam exciter for use in chemical analysis in processing systems
EP2306497B1 (en) * 2009-10-02 2012-06-06 Imec Method for manufacturing a low defect interface between a dielectric and a III/V compound
US8366967B2 (en) * 2010-02-22 2013-02-05 Inpria Corporation Metal chalcogenide aqueous precursors and processes to form metal chalcogenide films
US9245742B2 (en) * 2013-12-18 2016-01-26 Asm Ip Holding B.V. Sulfur-containing thin films
US9478419B2 (en) 2013-12-18 2016-10-25 Asm Ip Holding B.V. Sulfur-containing thin films
US10490475B2 (en) 2015-06-03 2019-11-26 Asm Ip Holding B.V. Methods for semiconductor passivation by nitridation after oxide removal
US9711350B2 (en) 2015-06-03 2017-07-18 Asm Ip Holding B.V. Methods for semiconductor passivation by nitridation
US9711396B2 (en) 2015-06-16 2017-07-18 Asm Ip Holding B.V. Method for forming metal chalcogenide thin films on a semiconductor device
US9741815B2 (en) 2015-06-16 2017-08-22 Asm Ip Holding B.V. Metal selenide and metal telluride thin films for semiconductor device applications

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4331737A (en) 1978-04-01 1982-05-25 Zaidan Hojin Handotai Kenkyu Shinkokai Oxynitride film and its manufacturing method
JPS607720A (ja) 1983-06-28 1985-01-16 Nec Corp エピタキシヤル成長方法
US4935789A (en) 1985-02-19 1990-06-19 Eaton Corporation Buried channel FET with lateral growth over amorphous region
US4802180A (en) 1986-04-30 1989-01-31 American Telephone And Telegraph Company, At&T Bell Laboratories Growth of congruently melting gadolinium scandium gallium garnet
US4745082A (en) 1986-06-12 1988-05-17 Ford Microelectronics, Inc. Method of making a self-aligned MESFET using a substitutional gate with side walls
US4843450A (en) 1986-06-16 1989-06-27 International Business Machines Corporation Compound semiconductor interface control
US4859253A (en) 1988-07-20 1989-08-22 International Business Machines Corporation Method for passivating a compound semiconductor surface and device having improved semiconductor-insulator interface
US5124762A (en) 1990-12-31 1992-06-23 Honeywell Inc. Gaas heterostructure metal-insulator-semiconductor integrated circuit technology
US5550089A (en) 1994-03-23 1996-08-27 Lucent Technologies Inc. Gallium oxide coatings for optoelectronic devices using electron beam evaporation of a high purity single crystal Gd3 Ga5 O12 source.
US5451548A (en) 1994-03-23 1995-09-19 At&T Corp. Electron beam deposition of gallium oxide thin films using a single high purity crystal source
US5760462A (en) * 1995-01-06 1998-06-02 President And Fellows Of Harvard College Metal, passivating layer, semiconductor, field-effect transistor
US5767388A (en) 1995-04-26 1998-06-16 Siemens Aktiengesellschaft Methane sensor and method for operating a sensor
US5597768A (en) 1996-03-21 1997-01-28 Motorola, Inc. Method of forming a Ga2 O3 dielectric layer
US5665658A (en) 1996-03-21 1997-09-09 Motorola Method of forming a dielectric layer structure
US5693565A (en) 1996-07-15 1997-12-02 Dow Corning Corporation Semiconductor chips suitable for known good die testing
JP3604835B2 (ja) 1996-09-11 2004-12-22 大和製罐株式会社 胴部に凹凸模様をもつアルミニウムｄｉ缶の製造方法
US5920105A (en) * 1996-09-19 1999-07-06 Fujitsu Limited Compound semiconductor field effect transistor having an amorphous gas gate insulation layer
US6030453A (en) 1997-03-04 2000-02-29 Motorola, Inc. III-V epitaxial wafer production
JP3734586B2 (ja) * 1997-03-05 2006-01-11 富士通株式会社 半導体装置及びその製造方法
US6207976B1 (en) 1997-12-17 2001-03-27 Fujitsu Limited Semiconductor device with ohmic contacts on compound semiconductor and manufacture thereof
US5945718A (en) 1998-02-12 1999-08-31 Motorola Inc. Self-aligned metal-oxide-compound semiconductor device and method of fabrication
US6094295A (en) 1998-02-12 2000-07-25 Motorola, Inc. Ultraviolet transmitting oxide with metallic oxide phase and method of fabrication
US6150677A (en) 1998-02-19 2000-11-21 Sumitomo Electric Industries, Ltd. Method of crystal growth of compound semiconductor, compound semiconductor device and method of manufacturing the device
US6006582A (en) 1998-03-17 1999-12-28 Advanced Technology Materials, Inc. Hydrogen sensor utilizing rare earth metal thin film detection element
JP3850580B2 (ja) 1999-03-30 2006-11-29 株式会社東芝 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101106196B1 (ko) * 2009-12-28 2012-01-30 김선기 지중 관로보호용 골재타설 격벽장치

Also Published As

Publication number Publication date
US6445015B1 (en) 2002-09-03
EP1312123A1 (en) 2003-05-21
JP2004507888A (ja) 2004-03-11
WO2002015285A1 (en) 2002-02-21
AU2001284850A1 (en) 2002-02-25
EP1312123A4 (en) 2006-08-02

Similar Documents

Publication Publication Date Title
KR20030027018A (ko) 금속 황화물 반도체 트랜지스터 디바이스
KR100761232B1 (ko) 배리어층을 이용하는 반도체 장치
US7187045B2 (en) Junction field effect metal oxide compound semiconductor integrated transistor devices
Abrokwah et al. A manufacturable complementary GaAs process
EP0256363B1 (en) Algaas/gaas complementary ic structure
US6989556B2 (en) Metal oxide compound semiconductor integrated transistor devices with a gate insulator structure
US6670651B1 (en) Metal sulfide-oxide semiconductor transistor devices
US20070138506A1 (en) Nitride metal oxide semiconductor integrated transistor devices
CN111668101B (zh) 一种增强型氮化镓高电子迁移率晶体管及其制备方法
US5945718A (en) Self-aligned metal-oxide-compound semiconductor device and method of fabrication
US7190037B2 (en) Integrated transistor devices
KR20030027017A (ko) 집적형 트랜지스터 디바이스
US20040266090A1 (en) Semiconductor device and method for manufacturing semiconductor device
JP2009076673A (ja) Ｉｉｉ族窒化物半導体を用いた電界効果トランジスタ
US5895929A (en) Low subthreshold leakage current HFET
KR20000011954A (ko) 갈륨아세닉베이스반도체본체상에산화물층을포함하는제품제조방법
Murai et al. A high power-added efficiency GaAs power MESFET operating at a very low drain bias for use in L-band medium-power amplifiers
JPH02111073A (ja) 絶縁ゲート電界効果トランジスタおよびその集積回路装置
US20080157073A1 (en) Integrated Transistor Devices
JP2010177297A (ja) 半導体装置およびその製造方法
KR100351812B1 (ko) 질화갈륨 화합물 반도체 소자 및 그 제조방법
JP2633009B2 (ja) 化合物半導体電界効果トランジスタとその製造方法
JPH0429225B2 (enExample)
JPS5918679A (ja) 半導体装置
JPH02262343A (ja) 化合物半導体装置及びその製造方法

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20030210

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20060810

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20070529

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20080527

NORF Unpaid initial registration fee
PC1904 Unpaid initial registration fee