AU2001284850A1 - Metal sulfide semiconductor transistor devices - Google Patents

Metal sulfide semiconductor transistor devices

Info

Publication number
AU2001284850A1
AU2001284850A1 AU2001284850A AU8485001A AU2001284850A1 AU 2001284850 A1 AU2001284850 A1 AU 2001284850A1 AU 2001284850 A AU2001284850 A AU 2001284850A AU 8485001 A AU8485001 A AU 8485001A AU 2001284850 A1 AU2001284850 A1 AU 2001284850A1
Authority
AU
Australia
Prior art keywords
metal sulfide
semiconductor transistor
transistor devices
sulfide semiconductor
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001284850A
Other languages
English (en)
Inventor
Walter David Braddock Iv
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of AU2001284850A1 publication Critical patent/AU2001284850A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/801—FETs having heterojunction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/051—Manufacture or treatment of FETs having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
  • Junction Field-Effect Transistors (AREA)
AU2001284850A 2000-08-11 2001-08-10 Metal sulfide semiconductor transistor devices Abandoned AU2001284850A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/638,130 US6445015B1 (en) 2000-05-04 2000-08-11 Metal sulfide semiconductor transistor devices
US09638130 2000-08-11
PCT/US2001/025259 WO2002015285A1 (en) 2000-08-11 2001-08-10 Metal sulfide semiconductor transistor devices

Publications (1)

Publication Number Publication Date
AU2001284850A1 true AU2001284850A1 (en) 2002-02-25

Family

ID=24558765

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001284850A Abandoned AU2001284850A1 (en) 2000-08-11 2001-08-10 Metal sulfide semiconductor transistor devices

Country Status (6)

Country Link
US (1) US6445015B1 (enExample)
EP (1) EP1312123A4 (enExample)
JP (1) JP2004507888A (enExample)
KR (1) KR20030027018A (enExample)
AU (1) AU2001284850A1 (enExample)
WO (1) WO2002015285A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6936900B1 (en) 2000-05-04 2005-08-30 Osemi, Inc. Integrated transistor devices
US6989556B2 (en) * 2002-06-06 2006-01-24 Osemi, Inc. Metal oxide compound semiconductor integrated transistor devices with a gate insulator structure
US7187045B2 (en) * 2002-07-16 2007-03-06 Osemi, Inc. Junction field effect metal oxide compound semiconductor integrated transistor devices
US6919251B2 (en) * 2002-07-31 2005-07-19 Texas Instruments Incorporated Gate dielectric and method
US6791125B2 (en) * 2002-09-30 2004-09-14 Freescale Semiconductor, Inc. Semiconductor device structures which utilize metal sulfides
US7071519B2 (en) * 2003-01-08 2006-07-04 Texas Instruments Incorporated Control of high-k gate dielectric film composition profile for property optimization
KR100885910B1 (ko) * 2003-04-30 2009-02-26 삼성전자주식회사 게이트 적층물에 ｏｈａ막을 구비하는 비 휘발성 반도체메모리 장치 및 그 제조방법
US20070138506A1 (en) * 2003-11-17 2007-06-21 Braddock Walter D Nitride metal oxide semiconductor integrated transistor devices
WO2005061756A1 (en) * 2003-12-09 2005-07-07 Osemi, Inc. High temperature vacuum evaporation apparatus
WO2007146859A1 (en) * 2006-06-12 2007-12-21 Osemi, Inc. Integrated transistor devices
US9997325B2 (en) 2008-07-17 2018-06-12 Verity Instruments, Inc. Electron beam exciter for use in chemical analysis in processing systems
EP2306497B1 (en) * 2009-10-02 2012-06-06 Imec Method for manufacturing a low defect interface between a dielectric and a III/V compound
KR101106196B1 (ko) * 2009-12-28 2012-01-30 김선기 지중 관로보호용 골재타설 격벽장치
US8366967B2 (en) * 2010-02-22 2013-02-05 Inpria Corporation Metal chalcogenide aqueous precursors and processes to form metal chalcogenide films
US9245742B2 (en) * 2013-12-18 2016-01-26 Asm Ip Holding B.V. Sulfur-containing thin films
US9478419B2 (en) 2013-12-18 2016-10-25 Asm Ip Holding B.V. Sulfur-containing thin films
US10490475B2 (en) 2015-06-03 2019-11-26 Asm Ip Holding B.V. Methods for semiconductor passivation by nitridation after oxide removal
US9711350B2 (en) 2015-06-03 2017-07-18 Asm Ip Holding B.V. Methods for semiconductor passivation by nitridation
US9711396B2 (en) 2015-06-16 2017-07-18 Asm Ip Holding B.V. Method for forming metal chalcogenide thin films on a semiconductor device
US9741815B2 (en) 2015-06-16 2017-08-22 Asm Ip Holding B.V. Metal selenide and metal telluride thin films for semiconductor device applications

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4331737A (en) 1978-04-01 1982-05-25 Zaidan Hojin Handotai Kenkyu Shinkokai Oxynitride film and its manufacturing method
JPS607720A (ja) 1983-06-28 1985-01-16 Nec Corp エピタキシヤル成長方法
US4935789A (en) 1985-02-19 1990-06-19 Eaton Corporation Buried channel FET with lateral growth over amorphous region
US4802180A (en) 1986-04-30 1989-01-31 American Telephone And Telegraph Company, At&T Bell Laboratories Growth of congruently melting gadolinium scandium gallium garnet
US4745082A (en) 1986-06-12 1988-05-17 Ford Microelectronics, Inc. Method of making a self-aligned MESFET using a substitutional gate with side walls
US4843450A (en) 1986-06-16 1989-06-27 International Business Machines Corporation Compound semiconductor interface control
US4859253A (en) 1988-07-20 1989-08-22 International Business Machines Corporation Method for passivating a compound semiconductor surface and device having improved semiconductor-insulator interface
US5124762A (en) 1990-12-31 1992-06-23 Honeywell Inc. Gaas heterostructure metal-insulator-semiconductor integrated circuit technology
US5550089A (en) 1994-03-23 1996-08-27 Lucent Technologies Inc. Gallium oxide coatings for optoelectronic devices using electron beam evaporation of a high purity single crystal Gd3 Ga5 O12 source.
US5451548A (en) 1994-03-23 1995-09-19 At&T Corp. Electron beam deposition of gallium oxide thin films using a single high purity crystal source
US5760462A (en) * 1995-01-06 1998-06-02 President And Fellows Of Harvard College Metal, passivating layer, semiconductor, field-effect transistor
US5767388A (en) 1995-04-26 1998-06-16 Siemens Aktiengesellschaft Methane sensor and method for operating a sensor
US5597768A (en) 1996-03-21 1997-01-28 Motorola, Inc. Method of forming a Ga2 O3 dielectric layer
US5665658A (en) 1996-03-21 1997-09-09 Motorola Method of forming a dielectric layer structure
US5693565A (en) 1996-07-15 1997-12-02 Dow Corning Corporation Semiconductor chips suitable for known good die testing
JP3604835B2 (ja) 1996-09-11 2004-12-22 大和製罐株式会社 胴部に凹凸模様をもつアルミニウムｄｉ缶の製造方法
US5920105A (en) * 1996-09-19 1999-07-06 Fujitsu Limited Compound semiconductor field effect transistor having an amorphous gas gate insulation layer
US6030453A (en) 1997-03-04 2000-02-29 Motorola, Inc. III-V epitaxial wafer production
JP3734586B2 (ja) * 1997-03-05 2006-01-11 富士通株式会社 半導体装置及びその製造方法
US6207976B1 (en) 1997-12-17 2001-03-27 Fujitsu Limited Semiconductor device with ohmic contacts on compound semiconductor and manufacture thereof
US5945718A (en) 1998-02-12 1999-08-31 Motorola Inc. Self-aligned metal-oxide-compound semiconductor device and method of fabrication
US6094295A (en) 1998-02-12 2000-07-25 Motorola, Inc. Ultraviolet transmitting oxide with metallic oxide phase and method of fabrication
US6150677A (en) 1998-02-19 2000-11-21 Sumitomo Electric Industries, Ltd. Method of crystal growth of compound semiconductor, compound semiconductor device and method of manufacturing the device
US6006582A (en) 1998-03-17 1999-12-28 Advanced Technology Materials, Inc. Hydrogen sensor utilizing rare earth metal thin film detection element
JP3850580B2 (ja) 1999-03-30 2006-11-29 株式会社東芝 半導体装置

Also Published As

Publication number Publication date
US6445015B1 (en) 2002-09-03
EP1312123A1 (en) 2003-05-21
JP2004507888A (ja) 2004-03-11
WO2002015285A1 (en) 2002-02-21
KR20030027018A (ko) 2003-04-03
EP1312123A4 (en) 2006-08-02

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