JP4244618B2 - 窒化物半導体素子の製造方法 - Google Patents

窒化物半導体素子の製造方法 Download PDF

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Publication number
JP4244618B2
JP4244618B2 JP2002329878A JP2002329878A JP4244618B2 JP 4244618 B2 JP4244618 B2 JP 4244618B2 JP 2002329878 A JP2002329878 A JP 2002329878A JP 2002329878 A JP2002329878 A JP 2002329878A JP 4244618 B2 JP4244618 B2 JP 4244618B2
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nitride semiconductor
semiconductor wafer
laser
substrate
groove
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Japanese (ja)
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JP2003218065A5 (enExample
JP2003218065A (ja
Inventor
博文 庄野
達憲 豊田
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Nichia Corp
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Nichia Corp
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JP2002329878A 2002-11-13 2002-11-13 窒化物半導体素子の製造方法 Expired - Lifetime JP4244618B2 (ja)

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JP2002329878A JP4244618B2 (ja) 2002-11-13 2002-11-13 窒化物半導体素子の製造方法

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JP2002329878A JP4244618B2 (ja) 2002-11-13 2002-11-13 窒化物半導体素子の製造方法

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JP34593797A Division JP3604550B2 (ja) 1997-12-16 1997-12-16 窒化物半導体素子の製造方法

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JP2008036300A Division JP5271563B2 (ja) 2008-02-18 2008-02-18 窒化物半導体素子の製造方法

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JP2003218065A JP2003218065A (ja) 2003-07-31
JP2003218065A5 JP2003218065A5 (enExample) 2005-06-23
JP4244618B2 true JP4244618B2 (ja) 2009-03-25

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4334321B2 (ja) 2003-11-05 2009-09-30 シャープ株式会社 窒化物半導体発光ダイオードチップの作製方法
JP2006086516A (ja) 2004-08-20 2006-03-30 Showa Denko Kk 半導体発光素子の製造方法
JP4346598B2 (ja) 2005-10-06 2009-10-21 株式会社東芝 化合物半導体素子及びその製造方法
US7557430B2 (en) * 2006-05-25 2009-07-07 Skyworks Solutions, Inc. Semiconductor seal ring
JP5556657B2 (ja) * 2008-05-14 2014-07-23 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法及びｉｉｉ族窒化物半導体発光素子、並びにランプ
JP2010103424A (ja) * 2008-10-27 2010-05-06 Showa Denko Kk 半導体発光素子の製造方法
JP5573192B2 (ja) 2010-01-22 2014-08-20 三菱電機株式会社 半導体装置の製造方法

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