JP2003068994A5 - - Google Patents

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Publication number
JP2003068994A5
JP2003068994A5 JP2002179456A JP2002179456A JP2003068994A5 JP 2003068994 A5 JP2003068994 A5 JP 2003068994A5 JP 2002179456 A JP2002179456 A JP 2002179456A JP 2002179456 A JP2002179456 A JP 2002179456A JP 2003068994 A5 JP2003068994 A5 JP 2003068994A5
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JP
Japan
Prior art keywords
memory
data storage
resistance
storage device
fabricating
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Application number
JP2002179456A
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English (en)
Japanese (ja)
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JP2003068994A (ja
JP4334824B2 (ja
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Priority claimed from US09/887,314 external-priority patent/US6633497B2/en
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Publication of JP2003068994A publication Critical patent/JP2003068994A/ja
Publication of JP2003068994A5 publication Critical patent/JP2003068994A5/ja
Application granted granted Critical
Publication of JP4334824B2 publication Critical patent/JP4334824B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2002179456A 2001-06-22 2002-06-20 短絡に対して耐性のあるメモリセルの抵抗性交点アレイ Expired - Lifetime JP4334824B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/887314 2001-06-22
US09/887,314 US6633497B2 (en) 2001-06-22 2001-06-22 Resistive cross point array of short-tolerant memory cells

Publications (3)

Publication Number Publication Date
JP2003068994A JP2003068994A (ja) 2003-03-07
JP2003068994A5 true JP2003068994A5 (enExample) 2005-04-28
JP4334824B2 JP4334824B2 (ja) 2009-09-30

Family

ID=25390895

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002179456A Expired - Lifetime JP4334824B2 (ja) 2001-06-22 2002-06-20 短絡に対して耐性のあるメモリセルの抵抗性交点アレイ

Country Status (6)

Country Link
US (1) US6633497B2 (enExample)
EP (1) EP1271546A3 (enExample)
JP (1) JP4334824B2 (enExample)
KR (1) KR100878478B1 (enExample)
CN (1) CN100474438C (enExample)
TW (1) TWI258214B (enExample)

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US20030023922A1 (en) * 2001-07-25 2003-01-30 Davis James A. Fault tolerant magnetoresistive solid-state storage device
DE10153310A1 (de) 2001-10-29 2003-05-22 Infineon Technologies Ag Photolithographisches Strukturierungsverfahren mit einer durch ein plasmaunterstützes Abscheideeverfahren hergestellten Kohlenstoff-Hartmaskenschicht diamantartiger Härte
CN100337333C (zh) * 2002-04-10 2007-09-12 松下电器产业株式会社 非易失性触发器
US6815248B2 (en) * 2002-04-18 2004-11-09 Infineon Technologies Ag Material combinations for tunnel junction cap layer, tunnel junction hard mask and tunnel junction stack seed layer in MRAM processing
US6834008B2 (en) * 2002-08-02 2004-12-21 Unity Semiconductor Corporation Cross point memory array using multiple modes of operation
TW578149B (en) * 2002-09-09 2004-03-01 Ind Tech Res Inst High density magnetic random access memory
US6768150B1 (en) * 2003-04-17 2004-07-27 Infineon Technologies Aktiengesellschaft Magnetic memory
US6873543B2 (en) * 2003-05-30 2005-03-29 Hewlett-Packard Development Company, L.P. Memory device
DE60323162D1 (de) * 2003-06-24 2008-10-02 Ibm Selbstausgerichtete leitfähige linien für magnetische direktzugriffsspeicherbausteine auf fet-basis und herstellungsverfahren dafür
US7064970B2 (en) * 2003-11-04 2006-06-20 Micron Technology, Inc. Serial transistor-cell array architecture
US7286378B2 (en) * 2003-11-04 2007-10-23 Micron Technology, Inc. Serial transistor-cell array architecture
US6969895B2 (en) * 2003-12-10 2005-11-29 Headway Technologies, Inc. MRAM cell with flat topography and controlled bit line to free layer distance and method of manufacture
US7038231B2 (en) * 2004-04-30 2006-05-02 International Business Machines Corporation Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation
US7084024B2 (en) * 2004-09-29 2006-08-01 International Business Machines Corporation Gate electrode forming methods using conductive hard mask
US7765676B2 (en) * 2004-11-18 2010-08-03 Hitachi Global Storage Technologies Netherlands B.V. Method for patterning a magnetoresistive sensor
US7196955B2 (en) * 2005-01-12 2007-03-27 Hewlett-Packard Development Company, L.P. Hardmasks for providing thermally assisted switching of magnetic memory elements
EP2763162B1 (en) * 2006-06-02 2016-05-11 Sulzer Metaplas GmbH Preventing metal contamination of a component in semi-conductors
US7382647B1 (en) 2007-02-27 2008-06-03 International Business Machines Corporation Rectifying element for a crosspoint based memory array architecture
US7929335B2 (en) * 2007-06-11 2011-04-19 International Business Machines Corporation Use of a symmetric resistive memory material as a diode to drive symmetric or asymmetric resistive memory
JP5268424B2 (ja) * 2008-05-16 2013-08-21 株式会社東芝 Ｘ線ｃｔ装置
WO2010078467A1 (en) * 2008-12-31 2010-07-08 Sandisk 3D, Llc Modulation of resistivity in carbon-based read-writeable materials
US8623735B2 (en) 2011-09-14 2014-01-07 Globalfoundries Inc. Methods of forming semiconductor devices having capacitor and via contacts
US9178009B2 (en) 2012-10-10 2015-11-03 Globalfoundries Inc. Methods of forming a capacitor and contact structures
US8809149B2 (en) 2012-12-12 2014-08-19 Globalfoundries Inc. High density serial capacitor device and methods of making such a capacitor device
US10698975B2 (en) 2016-01-27 2020-06-30 Hewlett Packard Enterprise Development Lp In situ transposition
US10840441B2 (en) 2018-09-14 2020-11-17 International Business Machines Corporation Diamond-like carbon hardmask for MRAM
CN113841248B (zh) * 2018-12-17 2025-04-01 芯成半导体(开曼)有限公司 自旋轨道扭矩磁存储器阵列及其制造
US10930843B2 (en) 2018-12-17 2021-02-23 Spin Memory, Inc. Process for manufacturing scalable spin-orbit torque (SOT) magnetic memory

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US3761896A (en) * 1972-04-18 1973-09-25 Ibm Memory array of cells containing bistable switchable resistors
JP2785678B2 (ja) * 1994-03-24 1998-08-13 日本電気株式会社 スピンバルブ膜およびこれを用いた再生ヘッド
US6590750B2 (en) * 1996-03-18 2003-07-08 International Business Machines Corporation Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices
US5861328A (en) * 1996-10-07 1999-01-19 Motorola, Inc. Method of fabricating GMR devices
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JP2001067862A (ja) * 1999-09-01 2001-03-16 Sanyo Electric Co Ltd 磁気メモリ素子
US6331944B1 (en) * 2000-04-13 2001-12-18 International Business Machines Corporation Magnetic random access memory using a series tunnel element select mechanism
US6456525B1 (en) * 2000-09-15 2002-09-24 Hewlett-Packard Company Short-tolerant resistive cross point array
US6611453B2 (en) * 2001-01-24 2003-08-26 Infineon Technologies Ag Self-aligned cross-point MRAM device with aluminum metallization layers
JP5013494B2 (ja) * 2001-04-06 2012-08-29 ルネサスエレクトロニクス株式会社 磁性メモリの製造方法
JP4405103B2 (ja) * 2001-04-20 2010-01-27 株式会社東芝 半導体記憶装置

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