KR100878478B1 - 데이터 저장 장치 - Google Patents
데이터 저장 장치 Download PDFInfo
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- KR100878478B1 KR100878478B1 KR1020020034838A KR20020034838A KR100878478B1 KR 100878478 B1 KR100878478 B1 KR 100878478B1 KR 1020020034838 A KR1020020034838 A KR 1020020034838A KR 20020034838 A KR20020034838 A KR 20020034838A KR 100878478 B1 KR100878478 B1 KR 100878478B1
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- South Korea
- Prior art keywords
- memory
- memory cell
- resistance
- memory element
- data storage
- Prior art date
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- 239000000463 material Substances 0.000 claims abstract description 15
- 238000013500 data storage Methods 0.000 claims abstract description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
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- 230000005415 magnetization Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
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- 238000003491 array Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
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- 239000010703 silicon Substances 0.000 description 3
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- 230000009471 action Effects 0.000 description 2
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- 206010034133 Pathogen resistance Diseases 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005290 antiferromagnetic effect Effects 0.000 description 1
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- 230000009977 dual effect Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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- 239000010931 gold Substances 0.000 description 1
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Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
- G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
- G11C17/165—Memory cells which are electrically programmed to cause a change in resistance, e.g. to permit multiple resistance steps to be programmed rather than conduct to or from non-conduct change of fuses and antifuses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
Claims (6)
- 메모리 셀(memory cell)(12)의 저항성 크로스 포인트 어레이(resistive cross point array)(10)를 포함하되,각 메모리 셀(12)은 메모리 요소(50) 및 상기 메모리 요소(50)에 직렬로 연결된 저항 요소를 포함하고,상기 저항 요소는 상기 메모리 요소(50)의 설계 저항(design reistance)의 0.5% 내지 50%의 저항을 가지고 있는데이터 저장 장치(8).
- 제 1 항에 있어서,상기 저항 요소는 전기 전도성 하드 마스크(hard mask) 물질(52)을 포함하는데이터 저장 장치.
- 제 2 항에 있어서,상기 마스크 물질(52)이 다이아몬드 형상의 탄소(diamond-like carbon)로 이루어진데이터 저장 장치.
- 제 1 항에 있어서,각 메모리 요소(50)가 스핀 의존 터널링 접합부(spin dependent tunneling junction)를 포함하고 있는데이터 저장 장치.
- 제 1 항에 있어서,상기 어레이(10)에 대한 복수의 워드 라인(word lines)(14) 및 비트 라인(bit lines)(16)과,선택된 메모리 셀(12)에 대한 판독 동작 동안 상기 선택된 메모리 셀(12)의 저항 상태를 감지하기 위한 회로(20)를 더 포함하고, 상기 회로는 제 1 전위를 선택된 비트 라인(16)으로 인가하고, 제 2 전위를 선택된 워드 라인(14)으로 인가하고, 상기 제 1 전위와 등가인 제 3 전위를 선택되지 않은 워드 라인 및 선택되지 않은 비트 라인(14, 16)의 서브셋(subset)으로 인가하는데이터 저장 장치.
- 제 2 항에 있어서,상기 마스크 물질(52)상에 금속화물(metalization)(54, 14)을 더 포함하는데이터 저장 장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/887,314 US6633497B2 (en) | 2001-06-22 | 2001-06-22 | Resistive cross point array of short-tolerant memory cells |
US09/887,314 | 2001-06-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030011240A KR20030011240A (ko) | 2003-02-07 |
KR100878478B1 true KR100878478B1 (ko) | 2009-01-14 |
Family
ID=25390895
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020020034838A KR100878478B1 (ko) | 2001-06-22 | 2002-06-21 | 데이터 저장 장치 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6633497B2 (ko) |
EP (1) | EP1271546A3 (ko) |
JP (1) | JP4334824B2 (ko) |
KR (1) | KR100878478B1 (ko) |
CN (1) | CN100474438C (ko) |
TW (1) | TWI258214B (ko) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030023922A1 (en) * | 2001-07-25 | 2003-01-30 | Davis James A. | Fault tolerant magnetoresistive solid-state storage device |
DE10153310A1 (de) * | 2001-10-29 | 2003-05-22 | Infineon Technologies Ag | Photolithographisches Strukturierungsverfahren mit einer durch ein plasmaunterstützes Abscheideeverfahren hergestellten Kohlenstoff-Hartmaskenschicht diamantartiger Härte |
AU2003220785A1 (en) * | 2002-04-10 | 2003-10-20 | Matsushita Electric Industrial Co., Ltd. | Non-volatile flip-flop |
US6815248B2 (en) * | 2002-04-18 | 2004-11-09 | Infineon Technologies Ag | Material combinations for tunnel junction cap layer, tunnel junction hard mask and tunnel junction stack seed layer in MRAM processing |
US6834008B2 (en) * | 2002-08-02 | 2004-12-21 | Unity Semiconductor Corporation | Cross point memory array using multiple modes of operation |
TW578149B (en) * | 2002-09-09 | 2004-03-01 | Ind Tech Res Inst | High density magnetic random access memory |
US6768150B1 (en) * | 2003-04-17 | 2004-07-27 | Infineon Technologies Aktiengesellschaft | Magnetic memory |
US6873543B2 (en) * | 2003-05-30 | 2005-03-29 | Hewlett-Packard Development Company, L.P. | Memory device |
ATE405950T1 (de) * | 2003-06-24 | 2008-09-15 | Ibm | Selbstausgerichtete leitfähige linien für magnetische direktzugriffsspeicherbausteine auf fet-basis und herstellungsverfahren dafür |
US7064970B2 (en) * | 2003-11-04 | 2006-06-20 | Micron Technology, Inc. | Serial transistor-cell array architecture |
US7286378B2 (en) * | 2003-11-04 | 2007-10-23 | Micron Technology, Inc. | Serial transistor-cell array architecture |
US6969895B2 (en) * | 2003-12-10 | 2005-11-29 | Headway Technologies, Inc. | MRAM cell with flat topography and controlled bit line to free layer distance and method of manufacture |
US7038231B2 (en) * | 2004-04-30 | 2006-05-02 | International Business Machines Corporation | Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation |
US7084024B2 (en) * | 2004-09-29 | 2006-08-01 | International Business Machines Corporation | Gate electrode forming methods using conductive hard mask |
US7765676B2 (en) * | 2004-11-18 | 2010-08-03 | Hitachi Global Storage Technologies Netherlands B.V. | Method for patterning a magnetoresistive sensor |
US7196955B2 (en) * | 2005-01-12 | 2007-03-27 | Hewlett-Packard Development Company, L.P. | Hardmasks for providing thermally assisted switching of magnetic memory elements |
US20090142599A1 (en) * | 2006-06-02 | 2009-06-04 | Nv Bekaert Sa | Method to prevent metal contamination by a substrate holder |
US7382647B1 (en) | 2007-02-27 | 2008-06-03 | International Business Machines Corporation | Rectifying element for a crosspoint based memory array architecture |
US7929335B2 (en) * | 2007-06-11 | 2011-04-19 | International Business Machines Corporation | Use of a symmetric resistive memory material as a diode to drive symmetric or asymmetric resistive memory |
JP5268424B2 (ja) * | 2008-05-16 | 2013-08-21 | 株式会社東芝 | X線ct装置 |
WO2010078467A1 (en) * | 2008-12-31 | 2010-07-08 | Sandisk 3D, Llc | Modulation of resistivity in carbon-based read-writeable materials |
US8623735B2 (en) | 2011-09-14 | 2014-01-07 | Globalfoundries Inc. | Methods of forming semiconductor devices having capacitor and via contacts |
US9178009B2 (en) | 2012-10-10 | 2015-11-03 | Globalfoundries Inc. | Methods of forming a capacitor and contact structures |
US8809149B2 (en) | 2012-12-12 | 2014-08-19 | Globalfoundries Inc. | High density serial capacitor device and methods of making such a capacitor device |
WO2017131653A1 (en) * | 2016-01-27 | 2017-08-03 | Hewlett Packard Enterprise Development Lp | In situ transposition |
US10840441B2 (en) | 2018-09-14 | 2020-11-17 | International Business Machines Corporation | Diamond-like carbon hardmask for MRAM |
US10930843B2 (en) | 2018-12-17 | 2021-02-23 | Spin Memory, Inc. | Process for manufacturing scalable spin-orbit torque (SOT) magnetic memory |
WO2020131893A2 (en) * | 2018-12-17 | 2020-06-25 | Spin Memory, Inc. | Process for manufacturing scalable spin-orbit torque (sot) magnetic memory |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH07262529A (ja) * | 1994-03-24 | 1995-10-13 | Nec Corp | スピンバルブ膜 |
JP2001067862A (ja) * | 1999-09-01 | 2001-03-16 | Sanyo Electric Co Ltd | 磁気メモリ素子 |
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US3761896A (en) * | 1972-04-18 | 1973-09-25 | Ibm | Memory array of cells containing bistable switchable resistors |
US6590750B2 (en) * | 1996-03-18 | 2003-07-08 | International Business Machines Corporation | Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices |
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US5981297A (en) * | 1997-02-05 | 1999-11-09 | The United States Of America As Represented By The Secretary Of The Navy | Biosensor using magnetically-detected label |
US6169686B1 (en) * | 1997-11-20 | 2001-01-02 | Hewlett-Packard Company | Solid-state memory with magnetic storage cells |
US6259644B1 (en) * | 1997-11-20 | 2001-07-10 | Hewlett-Packard Co | Equipotential sense methods for resistive cross point memory cell arrays |
US5991193A (en) * | 1997-12-02 | 1999-11-23 | International Business Machines Corporation | Voltage biasing for magnetic ram with magnetic tunnel memory cells |
KR100620155B1 (ko) * | 1998-07-15 | 2006-09-04 | 인피니언 테크놀로지스 아게 | 메모리 엘리먼트의 전기 저항이 정보 유닛을 나타내고 자계에 의해 영향받을 수 있는, 메모리 셀 시스템 및 그 제조 방법 |
US6055178A (en) * | 1998-12-18 | 2000-04-25 | Motorola, Inc. | Magnetic random access memory with a reference memory array |
US6331944B1 (en) * | 2000-04-13 | 2001-12-18 | International Business Machines Corporation | Magnetic random access memory using a series tunnel element select mechanism |
US6456525B1 (en) * | 2000-09-15 | 2002-09-24 | Hewlett-Packard Company | Short-tolerant resistive cross point array |
US6611453B2 (en) * | 2001-01-24 | 2003-08-26 | Infineon Technologies Ag | Self-aligned cross-point MRAM device with aluminum metallization layers |
JP5013494B2 (ja) * | 2001-04-06 | 2012-08-29 | ルネサスエレクトロニクス株式会社 | 磁性メモリの製造方法 |
JP4405103B2 (ja) * | 2001-04-20 | 2010-01-27 | 株式会社東芝 | 半導体記憶装置 |
-
2001
- 2001-06-22 US US09/887,314 patent/US6633497B2/en not_active Expired - Lifetime
-
2002
- 2002-04-24 TW TW091108483A patent/TWI258214B/zh not_active IP Right Cessation
- 2002-06-20 EP EP02254314A patent/EP1271546A3/en not_active Withdrawn
- 2002-06-20 JP JP2002179456A patent/JP4334824B2/ja not_active Expired - Lifetime
- 2002-06-21 KR KR1020020034838A patent/KR100878478B1/ko active IP Right Grant
- 2002-06-24 CN CNB021248966A patent/CN100474438C/zh not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07262529A (ja) * | 1994-03-24 | 1995-10-13 | Nec Corp | スピンバルブ膜 |
JP2001067862A (ja) * | 1999-09-01 | 2001-03-16 | Sanyo Electric Co Ltd | 磁気メモリ素子 |
Also Published As
Publication number | Publication date |
---|---|
CN1393887A (zh) | 2003-01-29 |
EP1271546A2 (en) | 2003-01-02 |
US20020196647A1 (en) | 2002-12-26 |
CN100474438C (zh) | 2009-04-01 |
KR20030011240A (ko) | 2003-02-07 |
TWI258214B (en) | 2006-07-11 |
JP2003068994A (ja) | 2003-03-07 |
EP1271546A3 (en) | 2004-05-06 |
US6633497B2 (en) | 2003-10-14 |
JP4334824B2 (ja) | 2009-09-30 |
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