CN100474438C - 容短接存储单元的电阻交叉点阵列 - Google Patents

容短接存储单元的电阻交叉点阵列 Download PDF

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Publication number
CN100474438C
CN100474438C CNB021248966A CN02124896A CN100474438C CN 100474438 C CN100474438 C CN 100474438C CN B021248966 A CNB021248966 A CN B021248966A CN 02124896 A CN02124896 A CN 02124896A CN 100474438 C CN100474438 C CN 100474438C
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CN
China
Prior art keywords
memory cell
memory cells
resistance
memory
voltage
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Expired - Lifetime
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CNB021248966A
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English (en)
Chinese (zh)
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CN1393887A (zh
Inventor
J·H·尼克尔
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication of CN1393887A publication Critical patent/CN1393887A/zh
Application granted granted Critical
Publication of CN100474438C publication Critical patent/CN100474438C/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G11C17/165—Memory cells which are electrically programmed to cause a change in resistance, e.g. to permit multiple resistance steps to be programmed rather than conduct to or from non-conduct change of fuses and antifuses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
CNB021248966A 2001-06-22 2002-06-24 容短接存储单元的电阻交叉点阵列 Expired - Lifetime CN100474438C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/887,314 US6633497B2 (en) 2001-06-22 2001-06-22 Resistive cross point array of short-tolerant memory cells
US09/887314 2001-06-22

Publications (2)

Publication Number Publication Date
CN1393887A CN1393887A (zh) 2003-01-29
CN100474438C true CN100474438C (zh) 2009-04-01

Family

ID=25390895

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB021248966A Expired - Lifetime CN100474438C (zh) 2001-06-22 2002-06-24 容短接存储单元的电阻交叉点阵列

Country Status (6)

Country Link
US (1) US6633497B2 (enExample)
EP (1) EP1271546A3 (enExample)
JP (1) JP4334824B2 (enExample)
KR (1) KR100878478B1 (enExample)
CN (1) CN100474438C (enExample)
TW (1) TWI258214B (enExample)

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US20030023922A1 (en) * 2001-07-25 2003-01-30 Davis James A. Fault tolerant magnetoresistive solid-state storage device
DE10153310A1 (de) 2001-10-29 2003-05-22 Infineon Technologies Ag Photolithographisches Strukturierungsverfahren mit einer durch ein plasmaunterstützes Abscheideeverfahren hergestellten Kohlenstoff-Hartmaskenschicht diamantartiger Härte
JP3768504B2 (ja) * 2002-04-10 2006-04-19 松下電器産業株式会社 不揮発性フリップフロップ
US6815248B2 (en) * 2002-04-18 2004-11-09 Infineon Technologies Ag Material combinations for tunnel junction cap layer, tunnel junction hard mask and tunnel junction stack seed layer in MRAM processing
US6834008B2 (en) * 2002-08-02 2004-12-21 Unity Semiconductor Corporation Cross point memory array using multiple modes of operation
TW578149B (en) * 2002-09-09 2004-03-01 Ind Tech Res Inst High density magnetic random access memory
US6768150B1 (en) * 2003-04-17 2004-07-27 Infineon Technologies Aktiengesellschaft Magnetic memory
US6873543B2 (en) * 2003-05-30 2005-03-29 Hewlett-Packard Development Company, L.P. Memory device
ATE405950T1 (de) * 2003-06-24 2008-09-15 Ibm Selbstausgerichtete leitfähige linien für magnetische direktzugriffsspeicherbausteine auf fet-basis und herstellungsverfahren dafür
US7286378B2 (en) * 2003-11-04 2007-10-23 Micron Technology, Inc. Serial transistor-cell array architecture
US7064970B2 (en) * 2003-11-04 2006-06-20 Micron Technology, Inc. Serial transistor-cell array architecture
US6969895B2 (en) * 2003-12-10 2005-11-29 Headway Technologies, Inc. MRAM cell with flat topography and controlled bit line to free layer distance and method of manufacture
US7038231B2 (en) * 2004-04-30 2006-05-02 International Business Machines Corporation Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation
US7084024B2 (en) * 2004-09-29 2006-08-01 International Business Machines Corporation Gate electrode forming methods using conductive hard mask
US7765676B2 (en) * 2004-11-18 2010-08-03 Hitachi Global Storage Technologies Netherlands B.V. Method for patterning a magnetoresistive sensor
US7196955B2 (en) * 2005-01-12 2007-03-27 Hewlett-Packard Development Company, L.P. Hardmasks for providing thermally assisted switching of magnetic memory elements
EP2763162B1 (en) * 2006-06-02 2016-05-11 Sulzer Metaplas GmbH Preventing metal contamination of a component in semi-conductors
US7382647B1 (en) 2007-02-27 2008-06-03 International Business Machines Corporation Rectifying element for a crosspoint based memory array architecture
US7929335B2 (en) * 2007-06-11 2011-04-19 International Business Machines Corporation Use of a symmetric resistive memory material as a diode to drive symmetric or asymmetric resistive memory
JP5268424B2 (ja) * 2008-05-16 2013-08-21 株式会社東芝 Ｘ線ｃｔ装置
WO2010078467A1 (en) * 2008-12-31 2010-07-08 Sandisk 3D, Llc Modulation of resistivity in carbon-based read-writeable materials
US8623735B2 (en) 2011-09-14 2014-01-07 Globalfoundries Inc. Methods of forming semiconductor devices having capacitor and via contacts
US9178009B2 (en) 2012-10-10 2015-11-03 Globalfoundries Inc. Methods of forming a capacitor and contact structures
US8809149B2 (en) 2012-12-12 2014-08-19 Globalfoundries Inc. High density serial capacitor device and methods of making such a capacitor device
US10698975B2 (en) 2016-01-27 2020-06-30 Hewlett Packard Enterprise Development Lp In situ transposition
US10840441B2 (en) 2018-09-14 2020-11-17 International Business Machines Corporation Diamond-like carbon hardmask for MRAM
US10930843B2 (en) 2018-12-17 2021-02-23 Spin Memory, Inc. Process for manufacturing scalable spin-orbit torque (SOT) magnetic memory
CN113841248B (zh) * 2018-12-17 2025-04-01 芯成半导体(开曼)有限公司 自旋轨道扭矩磁存储器阵列及其制造

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US3761896A (en) * 1972-04-18 1973-09-25 Ibm Memory array of cells containing bistable switchable resistors
JP2785678B2 (ja) * 1994-03-24 1998-08-13 日本電気株式会社 スピンバルブ膜およびこれを用いた再生ヘッド
US6590750B2 (en) * 1996-03-18 2003-07-08 International Business Machines Corporation Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices
US5861328A (en) * 1996-10-07 1999-01-19 Motorola, Inc. Method of fabricating GMR devices
US5981297A (en) * 1997-02-05 1999-11-09 The United States Of America As Represented By The Secretary Of The Navy Biosensor using magnetically-detected label
US6259644B1 (en) * 1997-11-20 2001-07-10 Hewlett-Packard Co Equipotential sense methods for resistive cross point memory cell arrays
US6169686B1 (en) * 1997-11-20 2001-01-02 Hewlett-Packard Company Solid-state memory with magnetic storage cells
US5991193A (en) * 1997-12-02 1999-11-23 International Business Machines Corporation Voltage biasing for magnetic ram with magnetic tunnel memory cells
WO2000004555A2 (de) * 1998-07-15 2000-01-27 Infineon Technologies Ag Speicherzellenanordnung, bei der ein elektrischer widerstand eines speicherelements eine information darstellt und durch ein magnetfeld beeinflussbar ist, und verfahren zu deren herstellung
US6055178A (en) * 1998-12-18 2000-04-25 Motorola, Inc. Magnetic random access memory with a reference memory array
JP2001067862A (ja) * 1999-09-01 2001-03-16 Sanyo Electric Co Ltd 磁気メモリ素子
US6331944B1 (en) * 2000-04-13 2001-12-18 International Business Machines Corporation Magnetic random access memory using a series tunnel element select mechanism
US6456525B1 (en) * 2000-09-15 2002-09-24 Hewlett-Packard Company Short-tolerant resistive cross point array
US6611453B2 (en) * 2001-01-24 2003-08-26 Infineon Technologies Ag Self-aligned cross-point MRAM device with aluminum metallization layers
JP5013494B2 (ja) * 2001-04-06 2012-08-29 ルネサスエレクトロニクス株式会社 磁性メモリの製造方法
JP4405103B2 (ja) * 2001-04-20 2010-01-27 株式会社東芝 半導体記憶装置

Also Published As

Publication number Publication date
KR20030011240A (ko) 2003-02-07
EP1271546A3 (en) 2004-05-06
US6633497B2 (en) 2003-10-14
CN1393887A (zh) 2003-01-29
JP4334824B2 (ja) 2009-09-30
US20020196647A1 (en) 2002-12-26
KR100878478B1 (ko) 2009-01-14
JP2003068994A (ja) 2003-03-07
EP1271546A2 (en) 2003-01-02
TWI258214B (en) 2006-07-11

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Owner name: SAMSUNG ELECTRONICS CO., LTD

Free format text: FORMER OWNER: HEWLETT-PACKARD DEVELOPMENT COMPANY

Effective date: 20071228

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Effective date of registration: 20071228

Address after: Gyeonggi Do, South Korea

Applicant after: SAMSUNG ELECTRONICS Co.,Ltd.

Address before: California, USA

Applicant before: Hewlett-Packard Co.

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GR01 Patent grant
CX01 Expiry of patent term

Granted publication date: 20090401

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