ATE405950T1 - Selbstausgerichtete leitfähige linien für magnetische direktzugriffsspeicherbausteine auf fet-basis und herstellungsverfahren dafür - Google Patents

Selbstausgerichtete leitfähige linien für magnetische direktzugriffsspeicherbausteine auf fet-basis und herstellungsverfahren dafür

Info

Publication number
ATE405950T1
ATE405950T1 AT03817675T AT03817675T ATE405950T1 AT E405950 T1 ATE405950 T1 AT E405950T1 AT 03817675 T AT03817675 T AT 03817675T AT 03817675 T AT03817675 T AT 03817675T AT E405950 T1 ATE405950 T1 AT E405950T1
Authority
AT
Austria
Prior art keywords
fet
self
random access
access memory
magnetic random
Prior art date
Application number
AT03817675T
Other languages
English (en)
Inventor
Michael Gaidis
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE405950T1 publication Critical patent/ATE405950T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
AT03817675T 2003-06-24 2003-06-24 Selbstausgerichtete leitfähige linien für magnetische direktzugriffsspeicherbausteine auf fet-basis und herstellungsverfahren dafür ATE405950T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2003/019772 WO2005010998A1 (en) 2003-06-24 2003-06-24 Self-aligned conductive lines for fet-based magnetic random access memory devices and method of forming the same

Publications (1)

Publication Number Publication Date
ATE405950T1 true ATE405950T1 (de) 2008-09-15

Family

ID=34102325

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03817675T ATE405950T1 (de) 2003-06-24 2003-06-24 Selbstausgerichtete leitfähige linien für magnetische direktzugriffsspeicherbausteine auf fet-basis und herstellungsverfahren dafür

Country Status (8)

Country Link
US (1) US20060138576A1 (de)
EP (1) EP1639653B1 (de)
JP (1) JP4716867B2 (de)
CN (1) CN100541819C (de)
AT (1) ATE405950T1 (de)
AU (1) AU2003249353A1 (de)
DE (1) DE60323162D1 (de)
WO (1) WO2005010998A1 (de)

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US6969895B2 (en) * 2003-12-10 2005-11-29 Headway Technologies, Inc. MRAM cell with flat topography and controlled bit line to free layer distance and method of manufacture
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US8125040B2 (en) * 2008-04-18 2012-02-28 Qualcomm Incorporated Two mask MTJ integration for STT MRAM
US8564079B2 (en) 2008-04-21 2013-10-22 Qualcomm Incorporated STT MRAM magnetic tunnel junction architecture and integration
US8482966B2 (en) * 2008-09-24 2013-07-09 Qualcomm Incorporated Magnetic element utilizing protective sidewall passivation
US8455267B2 (en) * 2009-05-14 2013-06-04 Qualcomm Incorporated Magnetic tunnel junction device and fabrication
US8138562B2 (en) * 2009-10-20 2012-03-20 Magic Technologies, Inc. Bit line preparation method in MRAM fabrication
US8912012B2 (en) 2009-11-25 2014-12-16 Qualcomm Incorporated Magnetic tunnel junction device and fabrication
US8455965B2 (en) * 2009-11-30 2013-06-04 Qualcomm Incorporated Fabrication and integration of devices with top and bottom electrodes including magnetic tunnel junctions
US8681536B2 (en) * 2010-01-15 2014-03-25 Qualcomm Incorporated Magnetic tunnel junction (MTJ) on planarized electrode
JP2011166015A (ja) * 2010-02-12 2011-08-25 Renesas Electronics Corp 半導体装置および半導体装置の製造方法
JP2011238679A (ja) 2010-05-07 2011-11-24 Fujitsu Semiconductor Ltd 磁気記憶装置の製造方法及び磁気記憶装置
CN103681497B (zh) * 2012-09-04 2018-03-20 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制备方法
US9954163B2 (en) 2014-05-15 2018-04-24 Everspin Technologies, Inc. Structures and methods for shielding magnetically sensitive components
US10718826B2 (en) * 2014-12-02 2020-07-21 Texas Instruments Incorporated High performance fluxgate device
KR102326547B1 (ko) 2015-08-19 2021-11-15 삼성전자주식회사 자기 저항 메모리 장치 및 그 제조 방법
EP3381064A4 (de) * 2015-11-23 2019-08-21 Intel Corporation Elektrische kontakte für magnetoresistive direktzugriffsspeichervorrichtungen
US10644232B2 (en) 2017-12-28 2020-05-05 International Business Machines Corporation Self-aligned and misalignment-tolerant landing pad for magnetoresistive random access memory
CN108376690B (zh) * 2018-01-18 2020-12-29 北京航空航天大学 一种用于制造高密度mram的自对准互联方法
US11374170B2 (en) * 2018-09-25 2022-06-28 Applied Materials, Inc. Methods to form top contact to a magnetic tunnel junction
US11315870B2 (en) * 2018-11-21 2022-04-26 Globalfoundries U.S. Inc. Top electrode interconnect structures
US11800810B2 (en) * 2020-11-25 2023-10-24 Robert Bosch Gmbh Magnetic field sensor with flux guide reset

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JP2005150457A (ja) * 2003-11-17 2005-06-09 Toshiba Corp 磁気記憶装置
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Also Published As

Publication number Publication date
EP1639653A1 (de) 2006-03-29
DE60323162D1 (de) 2008-10-02
WO2005010998A1 (en) 2005-02-03
JP2007521629A (ja) 2007-08-02
US20060138576A1 (en) 2006-06-29
CN1820375A (zh) 2006-08-16
EP1639653A4 (de) 2006-11-22
EP1639653B1 (de) 2008-08-20
JP4716867B2 (ja) 2011-07-06
AU2003249353A1 (en) 2005-02-14
CN100541819C (zh) 2009-09-16

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