JP2003051481A - 半導体集積回路装置の製造方法 - Google Patents

半導体集積回路装置の製造方法

Info

Publication number
JP2003051481A
JP2003051481A JP2001238945A JP2001238945A JP2003051481A JP 2003051481 A JP2003051481 A JP 2003051481A JP 2001238945 A JP2001238945 A JP 2001238945A JP 2001238945 A JP2001238945 A JP 2001238945A JP 2003051481 A JP2003051481 A JP 2003051481A
Authority
JP
Japan
Prior art keywords
manufacturing
integrated circuit
circuit device
semiconductor integrated
cleaning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001238945A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003051481A5 (enExample
Inventor
Junji Noguchi
純司 野口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2001238945A priority Critical patent/JP2003051481A/ja
Priority to US10/198,143 priority patent/US20030032292A1/en
Priority to KR1020020046258A priority patent/KR20030014123A/ko
Publication of JP2003051481A publication Critical patent/JP2003051481A/ja
Publication of JP2003051481A5 publication Critical patent/JP2003051481A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76883—Post-treatment or after-treatment of the conductive material

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2001238945A 2001-08-07 2001-08-07 半導体集積回路装置の製造方法 Pending JP2003051481A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001238945A JP2003051481A (ja) 2001-08-07 2001-08-07 半導体集積回路装置の製造方法
US10/198,143 US20030032292A1 (en) 2001-08-07 2002-07-19 Fabrication method of semiconductor integrated circuit device
KR1020020046258A KR20030014123A (ko) 2001-08-07 2002-08-06 반도체 집적 회로 장치의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001238945A JP2003051481A (ja) 2001-08-07 2001-08-07 半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
JP2003051481A true JP2003051481A (ja) 2003-02-21
JP2003051481A5 JP2003051481A5 (enExample) 2005-04-14

Family

ID=19069782

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001238945A Pending JP2003051481A (ja) 2001-08-07 2001-08-07 半導体集積回路装置の製造方法

Country Status (3)

Country Link
US (1) US20030032292A1 (enExample)
JP (1) JP2003051481A (enExample)
KR (1) KR20030014123A (enExample)

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US6992009B2 (en) 2001-09-11 2006-01-31 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device
JP2009290040A (ja) * 2008-05-30 2009-12-10 Renesas Technology Corp 半導体集積回路装置の製造方法
US7700477B2 (en) 2004-02-24 2010-04-20 Panasonic Corporation Method for fabricating semiconductor device
JP2011071199A (ja) * 2009-09-24 2011-04-07 Toshiba Corp 半導体基板の洗浄方法および半導体基板の洗浄装置
KR20140143431A (ko) * 2012-04-03 2014-12-16 일리노이즈 툴 워크스 인코포레이티드 반도체 웨이퍼를 세척하기 위한 원추형 스펀지 브러시
JP2014534615A (ja) * 2011-09-26 2014-12-18 インテグリス・インコーポレーテッド Ｃｍｐ後クリーニング装置および方法
JP2015065478A (ja) * 2008-07-24 2015-04-09 株式会社荏原製作所 基板処理装置および基板処理方法
JP2015517214A (ja) * 2012-04-03 2015-06-18 イリノイ トゥール ワークス インコーポレイティド 凹状突起部スポンジブラシ
US9358662B2 (en) 2008-06-04 2016-06-07 Ebara Corporation Substrate processing apparatus, substrate processing method, substrate holding mechanism, and substrate holding method
WO2022244745A1 (ja) * 2021-05-20 2022-11-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法

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US6746971B1 (en) * 2002-12-05 2004-06-08 Advanced Micro Devices, Inc. Method of forming copper sulfide for memory cell
JP2004266212A (ja) 2003-03-04 2004-09-24 Tadahiro Omi 基板の処理システム
US7129167B1 (en) * 2003-03-14 2006-10-31 Lam Research Corporation Methods and systems for a stress-free cleaning a surface of a substrate
US20050048768A1 (en) * 2003-08-26 2005-03-03 Hiroaki Inoue Apparatus and method for forming interconnects
JP2005142369A (ja) * 2003-11-06 2005-06-02 Renesas Technology Corp 半導体装置の製造方法
US20050124151A1 (en) * 2003-12-04 2005-06-09 Taiwan Semiconductor Manufacturing Co. Novel method to deposit carbon doped SiO2 films with improved film quality
TWI306276B (en) 2004-06-28 2009-02-11 Lam Res Corp Methods and systems for a stress-free buff
JP4493444B2 (ja) * 2004-08-26 2010-06-30 株式会社ルネサステクノロジ 半導体装置の製造方法
US20060081965A1 (en) * 2004-10-15 2006-04-20 Ju-Ai Ruan Plasma treatment of an etch stop layer
US7919391B2 (en) * 2004-12-24 2011-04-05 S.O.I.Tec Silicon On Insulator Technologies Methods for preparing a bonding surface of a semiconductor wafer
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CN100539005C (zh) * 2006-09-30 2009-09-09 中芯国际集成电路制造(上海)有限公司 化学机械抛光后晶圆表面的清洗方法
US8048717B2 (en) * 2007-04-25 2011-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for bonding 3D semiconductor devices
JP2009238896A (ja) * 2008-03-26 2009-10-15 Renesas Technology Corp 半導体集積回路装置の製造方法
KR101029104B1 (ko) * 2008-08-12 2011-04-13 주식회사 하이닉스반도체 반도체 소자의 제조방법
US20110052797A1 (en) * 2009-08-26 2011-03-03 International Business Machines Corporation Low Temperature Plasma-Free Method for the Nitridation of Copper
US8453656B2 (en) 2010-06-25 2013-06-04 Anastasios J. Tousimis Integrated processing and critical point drying systems for semiconductor and MEMS devices
US8758638B2 (en) * 2011-05-10 2014-06-24 Applied Materials, Inc. Copper oxide removal techniques
US9570311B2 (en) * 2012-02-10 2017-02-14 Taiwan Semiconductor Manufacturing Company, Ltd. Modular grinding apparatuses and methods for wafer thinning
KR101529788B1 (ko) * 2013-12-10 2015-06-29 성균관대학교산학협력단 금속 칼코게나이드 박막 및 그 제조방법
CN108203074B (zh) * 2016-12-19 2020-07-07 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制备方法
US11427731B2 (en) 2018-03-23 2022-08-30 Teledyne Micralyne, Inc. Adhesive silicon oxynitride film
US10867102B2 (en) * 2018-06-28 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Inverted pitch IC structure, layout method, and system
JP2020017668A (ja) 2018-07-26 2020-01-30 キオクシア株式会社 半導体装置の製造方法
CN112151669B (zh) * 2019-06-27 2024-04-09 联华电子股份有限公司 存储器元件的制作方法
US11694910B2 (en) 2019-09-10 2023-07-04 Illinois Tool Works Inc. Brush with non-constant nodule density
US11948811B2 (en) 2019-12-26 2024-04-02 Ebara Corporation Cleaning apparatus and polishing apparatus
KR20230011870A (ko) * 2021-07-14 2023-01-25 도쿄엘렉트론가부시키가이샤 기판 처리 장치
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Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6992009B2 (en) 2001-09-11 2006-01-31 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device
US7700477B2 (en) 2004-02-24 2010-04-20 Panasonic Corporation Method for fabricating semiconductor device
JP2009290040A (ja) * 2008-05-30 2009-12-10 Renesas Technology Corp 半導体集積回路装置の製造方法
US9358662B2 (en) 2008-06-04 2016-06-07 Ebara Corporation Substrate processing apparatus, substrate processing method, substrate holding mechanism, and substrate holding method
JP2015065478A (ja) * 2008-07-24 2015-04-09 株式会社荏原製作所 基板処理装置および基板処理方法
JP2011071199A (ja) * 2009-09-24 2011-04-07 Toshiba Corp 半導体基板の洗浄方法および半導体基板の洗浄装置
US8758521B2 (en) 2009-09-24 2014-06-24 Kabushiki Kaisha Toshiba Apparatus and method for cleaning semiconductor substrate
US9761466B2 (en) 2009-09-24 2017-09-12 Toshiba Memory Corporation Apparatus and method for cleaning semiconductor substrate
JP2014534615A (ja) * 2011-09-26 2014-12-18 インテグリス・インコーポレーテッド Ｃｍｐ後クリーニング装置および方法
JP2015517215A (ja) * 2012-04-03 2015-06-18 イリノイ トゥール ワークス インコーポレイティド 半導体ウェハーを洗浄する円錐型スポンジブラシ
JP2015517214A (ja) * 2012-04-03 2015-06-18 イリノイ トゥール ワークス インコーポレイティド 凹状突起部スポンジブラシ
KR20140143431A (ko) * 2012-04-03 2014-12-16 일리노이즈 툴 워크스 인코포레이티드 반도체 웨이퍼를 세척하기 위한 원추형 스펀지 브러시
JP2018088546A (ja) * 2012-04-03 2018-06-07 イリノイ トゥール ワークス インコーポレイティド 凹状突起部スポンジブラシ
KR102054536B1 (ko) * 2012-04-03 2019-12-10 일리노이즈 툴 워크스 인코포레이티드 반도체 웨이퍼를 세척하기 위한 원추형 스펀지 브러시
WO2022244745A1 (ja) * 2021-05-20 2022-11-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
JP2022178486A (ja) * 2021-05-20 2022-12-02 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
JP7650722B2 (ja) 2021-05-20 2025-03-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法

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