JP2003051197A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JP2003051197A
JP2003051197A JP2001238404A JP2001238404A JP2003051197A JP 2003051197 A JP2003051197 A JP 2003051197A JP 2001238404 A JP2001238404 A JP 2001238404A JP 2001238404 A JP2001238404 A JP 2001238404A JP 2003051197 A JP2003051197 A JP 2003051197A
Authority
JP
Japan
Prior art keywords
memory
read
word line
memory blocks
blocks
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2001238404A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003051197A5 (enExample
Inventor
Atsushi Fujiwara
淳 藤原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2001238404A priority Critical patent/JP2003051197A/ja
Publication of JP2003051197A publication Critical patent/JP2003051197A/ja
Publication of JP2003051197A5 publication Critical patent/JP2003051197A5/ja
Ceased legal-status Critical Current

Links

Landscapes

  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
JP2001238404A 2001-08-06 2001-08-06 半導体記憶装置 Ceased JP2003051197A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001238404A JP2003051197A (ja) 2001-08-06 2001-08-06 半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001238404A JP2003051197A (ja) 2001-08-06 2001-08-06 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2003051197A true JP2003051197A (ja) 2003-02-21
JP2003051197A5 JP2003051197A5 (enExample) 2008-07-31

Family

ID=19069322

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001238404A Ceased JP2003051197A (ja) 2001-08-06 2001-08-06 半導体記憶装置

Country Status (1)

Country Link
JP (1) JP2003051197A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005011497A (ja) * 2003-06-19 2005-01-13 Samsung Electronics Co Ltd 不揮発性半導体メモリ装置
JP2009176375A (ja) * 2008-01-25 2009-08-06 Toshiba Corp 不揮発性半導体記憶装置
JP2011165310A (ja) * 2010-02-09 2011-08-25 Infineon Technologies Ag Ｎｖｍオーバーラッピング書き込み方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56134390A (en) * 1980-03-21 1981-10-21 Fujitsu Ltd Rom element
JPS5769585A (en) * 1980-10-15 1982-04-28 Toshiba Corp Non-volatile semiconductor memory
JPS5998393A (ja) * 1982-11-26 1984-06-06 Nec Corp プログラマブルメモリ
JPS59129998A (ja) * 1983-01-17 1984-07-26 Toshiba Corp Ｒｏｍを内蔵した半導体集積回路
JPH02116084A (ja) * 1988-10-25 1990-04-27 Nec Corp 半導体記憶装置
JPH04137298A (ja) * 1990-09-28 1992-05-12 Toshiba Corp 半導体記憶装置
JPH09180450A (ja) * 1995-12-21 1997-07-11 Nec Corp 半導体記憶装置
JP2000215684A (ja) * 2000-01-01 2000-08-04 Hitachi Ltd 半導体記憶装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56134390A (en) * 1980-03-21 1981-10-21 Fujitsu Ltd Rom element
JPS5769585A (en) * 1980-10-15 1982-04-28 Toshiba Corp Non-volatile semiconductor memory
JPS5998393A (ja) * 1982-11-26 1984-06-06 Nec Corp プログラマブルメモリ
JPS59129998A (ja) * 1983-01-17 1984-07-26 Toshiba Corp Ｒｏｍを内蔵した半導体集積回路
JPH02116084A (ja) * 1988-10-25 1990-04-27 Nec Corp 半導体記憶装置
JPH04137298A (ja) * 1990-09-28 1992-05-12 Toshiba Corp 半導体記憶装置
JPH09180450A (ja) * 1995-12-21 1997-07-11 Nec Corp 半導体記憶装置
JP2000215684A (ja) * 2000-01-01 2000-08-04 Hitachi Ltd 半導体記憶装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005011497A (ja) * 2003-06-19 2005-01-13 Samsung Electronics Co Ltd 不揮発性半導体メモリ装置
JP2009176375A (ja) * 2008-01-25 2009-08-06 Toshiba Corp 不揮発性半導体記憶装置
JP2011165310A (ja) * 2010-02-09 2011-08-25 Infineon Technologies Ag Ｎｖｍオーバーラッピング書き込み方法

Similar Documents

Publication Publication Date Title
US7342826B2 (en) Semiconductor device
US7800953B2 (en) Method and system for selectively limiting peak power consumption during programming or erase of non-volatile memory devices
US5233566A (en) Address detector of a redundancy memory cell
CN100383894C (zh) 集成电路及操作集成电路的方法
US5847994A (en) Non-volatile semiconductor memory device having a back ground operation mode
JP3625383B2 (ja) 不揮発性半導体メモリ装置
JPH11126491A (ja) 半導体記憶装置
JP2001291394A (ja) 半導体記憶装置およびその救済方法
US6483748B2 (en) Nonvolatile memory with background operation function
JPH0157438B2 (enExample)
JP2000276882A (ja) 不揮発性半導体記憶装置とその記憶データの消去方法
US6614691B2 (en) Flash memory having separate read and write paths
JP2766082B2 (ja) 半導体記憶装置
JP3501916B2 (ja) 半導体記憶装置およびその一括消去ベリファイ方法
JP2591740B2 (ja) 不揮発性のプログラム可能な半導体メモリ
KR100290106B1 (ko) 메모리 디바이스
JP3012589B2 (ja) 不揮発性半導体記憶装置
JP3789977B2 (ja) 不揮発性半導体記憶装置
JP4010513B2 (ja) 不揮発性半導体記憶装置
JPH10106286A (ja) 半導体記憶装置およびそのテスト方法
JP4117683B2 (ja) 強誘電体メモリ装置及びその駆動方法
JP4680195B2 (ja) 半導体装置及びソース電圧制御方法
JP2003051197A (ja) 半導体記憶装置
JPH11144482A (ja) 不揮発性半導体記憶装置
JP3519542B2 (ja) 半導体記憶装置

Legal Events

Date Code Title Description
RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20061129

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080617

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080617

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20101203

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101214

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110210

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20111018

A045 Written measure of dismissal of application [lapsed due to lack of payment]

Free format text: JAPANESE INTERMEDIATE CODE: A045

Effective date: 20120228