JP2002524874A - 薄い半導体膜の二重パルスレーザー結晶化 - Google Patents

薄い半導体膜の二重パルスレーザー結晶化

Info

Publication number
JP2002524874A
JP2002524874A JP2000569433A JP2000569433A JP2002524874A JP 2002524874 A JP2002524874 A JP 2002524874A JP 2000569433 A JP2000569433 A JP 2000569433A JP 2000569433 A JP2000569433 A JP 2000569433A JP 2002524874 A JP2002524874 A JP 2002524874A
Authority
JP
Japan
Prior art keywords
pulse
film
energy
laser beam
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000569433A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002524874A5 (enExample
Inventor
イェー マククローハ デビッド
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Publication of JP2002524874A publication Critical patent/JP2002524874A/ja
Publication of JP2002524874A5 publication Critical patent/JP2002524874A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/381—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/381—Beam shaping, e.g. using a mask
    • H10P14/3812—Shape of mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/382—Scanning of a beam

Landscapes

  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
JP2000569433A 1998-09-04 1999-08-23 薄い半導体膜の二重パルスレーザー結晶化 Pending JP2002524874A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB9819338.6 1998-09-04
GBGB9819338.6A GB9819338D0 (en) 1998-09-04 1998-09-04 Laser crystallisation of thin films
PCT/EP1999/006161 WO2000014784A1 (en) 1998-09-04 1999-08-23 Double-pulse laser crystallisation of thin semiconductor films

Publications (2)

Publication Number Publication Date
JP2002524874A true JP2002524874A (ja) 2002-08-06
JP2002524874A5 JP2002524874A5 (enExample) 2006-10-12

Family

ID=10838370

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000569433A Pending JP2002524874A (ja) 1998-09-04 1999-08-23 薄い半導体膜の二重パルスレーザー結晶化

Country Status (5)

Country Link
US (1) US6169014B1 (enExample)
EP (1) EP1048061A1 (enExample)
JP (1) JP2002524874A (enExample)
GB (1) GB9819338D0 (enExample)
WO (1) WO2000014784A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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KR20140060536A (ko) * 2011-09-01 2014-05-20 어플라이드 머티어리얼스, 인코포레이티드 결정화 방법들

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US7723642B2 (en) * 1999-12-28 2010-05-25 Gsi Group Corporation Laser-based system for memory link processing with picosecond lasers
US20040134894A1 (en) * 1999-12-28 2004-07-15 Bo Gu Laser-based system for memory link processing with picosecond lasers
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US20060141681A1 (en) * 2000-01-10 2006-06-29 Yunlong Sun Processing a memory link with a set of at least two laser pulses
US20030222324A1 (en) * 2000-01-10 2003-12-04 Yunlong Sun Laser systems for passivation or link processing with a set of laser pulses
US7671295B2 (en) * 2000-01-10 2010-03-02 Electro Scientific Industries, Inc. Processing a memory link with a set of at least two laser pulses
US6368945B1 (en) * 2000-03-16 2002-04-09 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification
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US6830993B1 (en) * 2000-03-21 2004-12-14 The Trustees Of Columbia University In The City Of New York Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
US7115503B2 (en) 2000-10-10 2006-10-03 The Trustees Of Columbia University In The City Of New York Method and apparatus for processing thin metal layers
CN1200320C (zh) 2000-11-27 2005-05-04 纽约市哥伦比亚大学托管会 用激光结晶化法加工衬底上半导体薄膜区域的方法和掩模投影系统
US6777645B2 (en) * 2001-03-29 2004-08-17 Gsi Lumonics Corporation High-speed, precision, laser-based method and system for processing material of one or more targets within a field
US6908835B2 (en) * 2001-04-19 2005-06-21 The Trustees Of Columbia University In The City Of New York Method and system for providing a single-scan, continuous motion sequential lateral solidification
JP3977038B2 (ja) 2001-08-27 2007-09-19 株式会社半導体エネルギー研究所 レーザ照射装置およびレーザ照射方法
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JP4006994B2 (ja) * 2001-12-18 2007-11-14 株式会社リコー 立体構造体の加工方法、立体形状品の製造方法及び立体構造体
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WO2004017381A2 (en) * 2002-08-19 2004-02-26 The Trustees Of Columbia University In The City Of New York Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and structure of such film regions
WO2004017382A2 (en) 2002-08-19 2004-02-26 The Trustees Of Columbia University In The City Of New York Process and system for laser crystallization processing of film regions on a substrate to provide substantial uniformity within areas in such regions and edge areas thereof, and a structure of such film regions
JP4879486B2 (ja) * 2002-08-19 2012-02-22 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 基板上のフィルム領域をレーザ結晶化処理してほぼ均一にするプロセス及びシステム、及びこのフィルム領域の構造
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CN100593292C (zh) * 2003-08-19 2010-03-03 电子科学工业公司 产生定制的激光脉冲组
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WO2005029551A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
US7318866B2 (en) 2003-09-16 2008-01-15 The Trustees Of Columbia University In The City Of New York Systems and methods for inducing crystallization of thin films using multiple optical paths
US7364952B2 (en) * 2003-09-16 2008-04-29 The Trustees Of Columbia University In The City Of New York Systems and methods for processing thin films
WO2005029550A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for producing crystalline thin films with a uniform crystalline orientation
US7164152B2 (en) * 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
WO2005029548A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York System and process for providing multiple beam sequential lateral solidification
WO2005029549A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for facilitating bi-directional growth
TWI366859B (en) 2003-09-16 2012-06-21 Univ Columbia System and method of enhancing the width of polycrystalline grains produced via sequential lateral solidification using a modified mask pattern
WO2005034193A2 (en) 2003-09-19 2005-04-14 The Trustees Of Columbia University In The City Ofnew York Single scan irradiation for crystallization of thin films
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US7301981B2 (en) * 2004-12-09 2007-11-27 Electro Scientific Industries, Inc. Methods for synchronized pulse shape tailoring
US20060191884A1 (en) * 2005-01-21 2006-08-31 Johnson Shepard D High-speed, precise, laser-based material processing method and system
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US8598588B2 (en) * 2005-12-05 2013-12-03 The Trustees Of Columbia University In The City Of New York Systems and methods for processing a film, and thin films
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KR20140060536A (ko) * 2011-09-01 2014-05-20 어플라이드 머티어리얼스, 인코포레이티드 결정화 방법들
JP2014528162A (ja) * 2011-09-01 2014-10-23 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 結晶化法
KR101713662B1 (ko) 2011-09-01 2017-03-08 어플라이드 머티어리얼스, 인코포레이티드 결정화 방법들
US10074538B2 (en) 2011-09-01 2018-09-11 Applied Materials, Inc. Methods for crystallizing a substrate using a plurality of laser pulses and freeze periods

Also Published As

Publication number Publication date
US6169014B1 (en) 2001-01-02
WO2000014784A1 (en) 2000-03-16
GB9819338D0 (en) 1998-10-28
EP1048061A1 (en) 2000-11-02

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