JP2002524874A - 薄い半導体膜の二重パルスレーザー結晶化 - Google Patents
薄い半導体膜の二重パルスレーザー結晶化Info
- Publication number
- JP2002524874A JP2002524874A JP2000569433A JP2000569433A JP2002524874A JP 2002524874 A JP2002524874 A JP 2002524874A JP 2000569433 A JP2000569433 A JP 2000569433A JP 2000569433 A JP2000569433 A JP 2000569433A JP 2002524874 A JP2002524874 A JP 2002524874A
- Authority
- JP
- Japan
- Prior art keywords
- pulse
- film
- energy
- laser beam
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 238000005499 laser crystallization Methods 0.000 title claims abstract description 17
- 239000010408 film Substances 0.000 claims abstract description 51
- 238000000034 method Methods 0.000 claims abstract description 27
- 239000010409 thin film Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000002425 crystallisation Methods 0.000 claims abstract description 10
- 230000008025 crystallization Effects 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 6
- 230000003287 optical effect Effects 0.000 claims description 7
- 238000007493 shaping process Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000013078 crystal Substances 0.000 abstract description 12
- 239000012528 membrane Substances 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 5
- 238000007715 excimer laser crystallization Methods 0.000 description 4
- 238000004093 laser heating Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010942 self-nucleation Methods 0.000 description 2
- 206010034960 Photophobia Diseases 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
- 238000005345 coagulation Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000012925 reference material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
- H01L21/0268—Shape of mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9819338.6 | 1998-09-04 | ||
| GBGB9819338.6A GB9819338D0 (en) | 1998-09-04 | 1998-09-04 | Laser crystallisation of thin films |
| PCT/EP1999/006161 WO2000014784A1 (en) | 1998-09-04 | 1999-08-23 | Double-pulse laser crystallisation of thin semiconductor films |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002524874A true JP2002524874A (ja) | 2002-08-06 |
| JP2002524874A5 JP2002524874A5 (enExample) | 2006-10-12 |
Family
ID=10838370
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000569433A Pending JP2002524874A (ja) | 1998-09-04 | 1999-08-23 | 薄い半導体膜の二重パルスレーザー結晶化 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6169014B1 (enExample) |
| EP (1) | EP1048061A1 (enExample) |
| JP (1) | JP2002524874A (enExample) |
| GB (1) | GB9819338D0 (enExample) |
| WO (1) | WO2000014784A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20140060536A (ko) * | 2011-09-01 | 2014-05-20 | 어플라이드 머티어리얼스, 인코포레이티드 | 결정화 방법들 |
Families Citing this family (71)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6555449B1 (en) * | 1996-05-28 | 2003-04-29 | Trustees Of Columbia University In The City Of New York | Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication |
| US6281471B1 (en) | 1999-12-28 | 2001-08-28 | Gsi Lumonics, Inc. | Energy-efficient, laser-based method and system for processing target material |
| US7838794B2 (en) * | 1999-12-28 | 2010-11-23 | Gsi Group Corporation | Laser-based method and system for removing one or more target link structures |
| US7723642B2 (en) * | 1999-12-28 | 2010-05-25 | Gsi Group Corporation | Laser-based system for memory link processing with picosecond lasers |
| US8217304B2 (en) | 2001-03-29 | 2012-07-10 | Gsi Group Corporation | Methods and systems for thermal-based laser processing a multi-material device |
| US20040134894A1 (en) * | 1999-12-28 | 2004-07-15 | Bo Gu | Laser-based system for memory link processing with picosecond lasers |
| KR100671212B1 (ko) * | 1999-12-31 | 2007-01-18 | 엘지.필립스 엘시디 주식회사 | 폴리실리콘 형성방법 |
| US7671295B2 (en) * | 2000-01-10 | 2010-03-02 | Electro Scientific Industries, Inc. | Processing a memory link with a set of at least two laser pulses |
| US20060141681A1 (en) * | 2000-01-10 | 2006-06-29 | Yunlong Sun | Processing a memory link with a set of at least two laser pulses |
| US20030222324A1 (en) * | 2000-01-10 | 2003-12-04 | Yunlong Sun | Laser systems for passivation or link processing with a set of laser pulses |
| US6368945B1 (en) * | 2000-03-16 | 2002-04-09 | The Trustees Of Columbia University In The City Of New York | Method and system for providing a continuous motion sequential lateral solidification |
| US6830993B1 (en) * | 2000-03-21 | 2004-12-14 | The Trustees Of Columbia University In The City Of New York | Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method |
| AU2000240180A1 (en) * | 2000-03-21 | 2001-10-03 | The Trustees Of Columbia University In The City Of New York | Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method |
| MXPA02005590A (es) * | 2000-10-10 | 2002-09-30 | Univ Columbia | Metodo y aparato para procesar capas de metal delgadas. |
| TW546684B (en) * | 2000-11-27 | 2003-08-11 | Univ Columbia | Process and mask projection system for laser crystallization processing of semiconductor film regions on a substrate |
| CN1443364A (zh) * | 2001-04-19 | 2003-09-17 | 纽约市哥伦比亚大学托管会 | 用于提供单扫描、连续移动连续横向凝固的方法和系统 |
| JP2005525689A (ja) | 2001-08-27 | 2005-08-25 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | ミクロ構造の非整列による多結晶薄膜トランジスタの均一性の改善 |
| JP3977038B2 (ja) | 2001-08-27 | 2007-09-19 | 株式会社半導体エネルギー研究所 | レーザ照射装置およびレーザ照射方法 |
| JP4006994B2 (ja) * | 2001-12-18 | 2007-11-14 | 株式会社リコー | 立体構造体の加工方法、立体形状品の製造方法及び立体構造体 |
| US6951995B2 (en) | 2002-03-27 | 2005-10-04 | Gsi Lumonics Corp. | Method and system for high-speed, precise micromachining an array of devices |
| AU2003220611A1 (en) | 2002-04-01 | 2003-10-20 | The Trustees Of Columbia University In The City Of New York | Method and system for providing a thin film |
| TWI378307B (en) * | 2002-08-19 | 2012-12-01 | Univ Columbia | Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and structure of such film regions |
| JP5030382B2 (ja) | 2002-08-19 | 2012-09-19 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | 基板上のフィルム領域を処理して、こうした領域内及びその端部領域をほぼ均一にするレーザ結晶化プロセス及びシステム |
| AU2003258288A1 (en) | 2002-08-19 | 2004-03-03 | The Trustees Of Columbia University In The City Of New York | Process and system for processing a thin film sample and thin film structure |
| AU2003258289A1 (en) | 2002-08-19 | 2004-03-03 | The Trustees Of Columbia University In The City Of New York | A single-shot semiconductor processing system and method having various irradiation patterns |
| JP5164378B2 (ja) * | 2003-02-19 | 2013-03-21 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | 逐次的横方向結晶化技術を用いて結晶化させた複数の半導体薄膜フィルムを処理するシステム及びプロセス |
| CN100593292C (zh) * | 2003-08-19 | 2010-03-03 | 电子科学工业公司 | 产生定制的激光脉冲组 |
| US7318866B2 (en) | 2003-09-16 | 2008-01-15 | The Trustees Of Columbia University In The City Of New York | Systems and methods for inducing crystallization of thin films using multiple optical paths |
| US7364952B2 (en) | 2003-09-16 | 2008-04-29 | The Trustees Of Columbia University In The City Of New York | Systems and methods for processing thin films |
| WO2005029551A2 (en) | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions |
| WO2005029549A2 (en) * | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | Method and system for facilitating bi-directional growth |
| WO2005029548A2 (en) * | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | System and process for providing multiple beam sequential lateral solidification |
| US7164152B2 (en) | 2003-09-16 | 2007-01-16 | The Trustees Of Columbia University In The City Of New York | Laser-irradiated thin films having variable thickness |
| WO2005029546A2 (en) * | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination |
| WO2005029547A2 (en) * | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | Enhancing the width of polycrystalline grains with mask |
| WO2005029550A2 (en) * | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | Method and system for producing crystalline thin films with a uniform crystalline orientation |
| WO2005034193A2 (en) | 2003-09-19 | 2005-04-14 | The Trustees Of Columbia University In The City Ofnew York | Single scan irradiation for crystallization of thin films |
| US7139294B2 (en) * | 2004-05-14 | 2006-11-21 | Electro Scientific Industries, Inc. | Multi-output harmonic laser and methods employing same |
| US7645337B2 (en) * | 2004-11-18 | 2010-01-12 | The Trustees Of Columbia University In The City Of New York | Systems and methods for creating crystallographic-orientation controlled poly-silicon films |
| US20060128073A1 (en) * | 2004-12-09 | 2006-06-15 | Yunlong Sun | Multiple-wavelength laser micromachining of semiconductor devices |
| US7289549B2 (en) * | 2004-12-09 | 2007-10-30 | Electro Scientific Industries, Inc. | Lasers for synchronized pulse shape tailoring |
| US20060191884A1 (en) * | 2005-01-21 | 2006-08-31 | Johnson Shepard D | High-speed, precise, laser-based material processing method and system |
| US8221544B2 (en) | 2005-04-06 | 2012-07-17 | The Trustees Of Columbia University In The City Of New York | Line scan sequential lateral solidification of thin films |
| EP1716964B1 (en) * | 2005-04-28 | 2009-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device and laser irradiation apparatus |
| JP2009505432A (ja) * | 2005-08-16 | 2009-02-05 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | 薄膜のハイ・スループット結晶化 |
| WO2007067541A2 (en) * | 2005-12-05 | 2007-06-14 | The Trustees Of Columbia University In The City Of New York | Systems and methods for processing a film, and thin films |
| US8846551B2 (en) | 2005-12-21 | 2014-09-30 | University Of Virginia Patent Foundation | Systems and methods of laser texturing of material surfaces and their applications |
| WO2008127807A1 (en) * | 2007-03-09 | 2008-10-23 | University Of Virginia Patent Foundation | Systems and methods of laser texturing of material surfaces and their applications |
| US8753990B2 (en) * | 2005-12-21 | 2014-06-17 | University Of Virginia Patent Foundation | Systems and methods of laser texturing and crystallization of material surfaces |
| KR101191404B1 (ko) | 2006-01-12 | 2012-10-16 | 삼성디스플레이 주식회사 | 실리콘 결정화용 마스크와 이를 이용한 실리콘 결정화 방법및 표시 장치 |
| US7605343B2 (en) * | 2006-05-24 | 2009-10-20 | Electro Scientific Industries, Inc. | Micromachining with short-pulsed, solid-state UV laser |
| US8084706B2 (en) * | 2006-07-20 | 2011-12-27 | Gsi Group Corporation | System and method for laser processing at non-constant velocities |
| DE102007025942A1 (de) * | 2007-06-04 | 2008-12-11 | Coherent Gmbh | Verfahren zur selektiven thermischen Oberflächenbehandlung eines Flächensubstrates |
| TW200942935A (en) | 2007-09-21 | 2009-10-16 | Univ Columbia | Collections of laterally crystallized semiconductor islands for use in thin film transistors and systems and methods for making same |
| WO2009042784A1 (en) | 2007-09-25 | 2009-04-02 | The Trustees Of Columbia University In The City Of New York | Methods of producing high uniformity in thin film transistor devices fabricated on laterally crystallized thin films |
| WO2009067688A1 (en) | 2007-11-21 | 2009-05-28 | The Trustees Of Columbia University In The City Of New York | Systems and methods for preparing epitaxially textured polycrystalline films |
| EP2212913A4 (en) * | 2007-11-21 | 2013-10-30 | Univ Columbia | SYSTEMS AND METHOD FOR PRODUCING EPITACTIC STRUCTURED THICK FILMS |
| US8012861B2 (en) | 2007-11-21 | 2011-09-06 | The Trustees Of Columbia University In The City Of New York | Systems and methods for preparing epitaxially textured polycrystalline films |
| KR101413370B1 (ko) * | 2008-02-29 | 2014-06-30 | 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 | 결정질 막 제조 방법, 태양전지 형성 방법 및 이 방법에 의해 제조된 결정질 막 및 태양 전지 |
| TWI452632B (zh) * | 2008-02-29 | 2014-09-11 | Univ Columbia | 製造均勻一致結晶矽膜的微影方法 |
| WO2009111340A2 (en) * | 2008-02-29 | 2009-09-11 | The Trustees Of Columbia University In The City Of New York | Flash lamp annealing crystallization for large area thin films |
| KR20110094022A (ko) | 2008-11-14 | 2011-08-19 | 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 | 박막 결정화를 위한 시스템 및 방법 |
| US9087696B2 (en) | 2009-11-03 | 2015-07-21 | The Trustees Of Columbia University In The City Of New York | Systems and methods for non-periodic pulse partial melt film processing |
| US8440581B2 (en) | 2009-11-24 | 2013-05-14 | The Trustees Of Columbia University In The City Of New York | Systems and methods for non-periodic pulse sequential lateral solidification |
| US9646831B2 (en) | 2009-11-03 | 2017-05-09 | The Trustees Of Columbia University In The City Of New York | Advanced excimer laser annealing for thin films |
| EP2504059A4 (en) * | 2009-11-24 | 2014-01-22 | Univ Columbia | SYSTEMS AND METHOD FOR SEQUENTIAL SIDE FIXING WITH NONPERIODIC IMPULSES |
| TWI459444B (zh) | 2009-11-30 | 2014-11-01 | Applied Materials Inc | 在半導體應用上的結晶處理 |
| WO2011082065A2 (en) * | 2009-12-30 | 2011-07-07 | Gsi Group Corporation | Link processing with high speed beam deflection |
| US10131086B2 (en) | 2011-06-30 | 2018-11-20 | University Of Virginia Patent Foundation | Micro-structure and nano-structure replication methods and article of manufacture |
| TWI577488B (zh) * | 2014-11-17 | 2017-04-11 | 財團法人工業技術研究院 | 表面加工方法 |
| KR102440115B1 (ko) | 2015-11-13 | 2022-09-05 | 삼성디스플레이 주식회사 | 엑시머 레이저 어닐링 방법 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3585088A (en) * | 1968-10-18 | 1971-06-15 | Ibm | Methods of producing single crystals on supporting substrates |
| US3600237A (en) * | 1969-12-17 | 1971-08-17 | Us Navy | Controlled nucleation in zone recrystallized insb films |
| US4309225A (en) * | 1979-09-13 | 1982-01-05 | Massachusetts Institute Of Technology | Method of crystallizing amorphous material with a moving energy beam |
| US4330363A (en) * | 1980-08-28 | 1982-05-18 | Xerox Corporation | Thermal gradient control for enhanced laser induced crystallization of predefined semiconductor areas |
| US4400715A (en) * | 1980-11-19 | 1983-08-23 | International Business Machines Corporation | Thin film semiconductor device and method for manufacture |
| JPS5821319A (ja) * | 1981-07-30 | 1983-02-08 | Fujitsu Ltd | レ−ザアニ−ル方法 |
| US4604791A (en) * | 1982-09-24 | 1986-08-12 | Todorof William J | Method for producing multi-layer, thin-film, flexible silicon alloy photovoltaic cells |
| WO1995026517A1 (en) * | 1992-11-10 | 1995-10-05 | United States Department Of Energy | Laser beam pulse formatting method |
| JP3204986B2 (ja) * | 1996-05-28 | 2001-09-04 | ザ トラスティース オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | 基板上の半導体膜領域の結晶化処理及びこの方法により製造されたデバイス |
| US6014944A (en) * | 1997-09-19 | 2000-01-18 | The United States Of America As Represented By The Secretary Of The Navy | Apparatus for improving crystalline thin films with a contoured beam pulsed laser |
-
1998
- 1998-09-04 GB GBGB9819338.6A patent/GB9819338D0/en not_active Ceased
-
1999
- 1999-08-23 EP EP99944473A patent/EP1048061A1/en not_active Ceased
- 1999-08-23 WO PCT/EP1999/006161 patent/WO2000014784A1/en not_active Ceased
- 1999-08-23 US US09/379,060 patent/US6169014B1/en not_active Expired - Lifetime
- 1999-08-23 JP JP2000569433A patent/JP2002524874A/ja active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20140060536A (ko) * | 2011-09-01 | 2014-05-20 | 어플라이드 머티어리얼스, 인코포레이티드 | 결정화 방법들 |
| JP2014528162A (ja) * | 2011-09-01 | 2014-10-23 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 結晶化法 |
| KR101713662B1 (ko) | 2011-09-01 | 2017-03-08 | 어플라이드 머티어리얼스, 인코포레이티드 | 결정화 방법들 |
| US10074538B2 (en) | 2011-09-01 | 2018-09-11 | Applied Materials, Inc. | Methods for crystallizing a substrate using a plurality of laser pulses and freeze periods |
Also Published As
| Publication number | Publication date |
|---|---|
| US6169014B1 (en) | 2001-01-02 |
| GB9819338D0 (en) | 1998-10-28 |
| EP1048061A1 (en) | 2000-11-02 |
| WO2000014784A1 (en) | 2000-03-16 |
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