GB9819338D0 - Laser crystallisation of thin films - Google Patents

Laser crystallisation of thin films

Info

Publication number
GB9819338D0
GB9819338D0 GBGB9819338.6A GB9819338A GB9819338D0 GB 9819338 D0 GB9819338 D0 GB 9819338D0 GB 9819338 A GB9819338 A GB 9819338A GB 9819338 D0 GB9819338 D0 GB 9819338D0
Authority
GB
United Kingdom
Prior art keywords
thin films
laser crystallisation
crystallisation
laser
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB9819338.6A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Priority to GBGB9819338.6A priority Critical patent/GB9819338D0/en
Publication of GB9819338D0 publication Critical patent/GB9819338D0/en
Priority to EP99944473A priority patent/EP1048061A1/en
Priority to PCT/EP1999/006161 priority patent/WO2000014784A1/en
Priority to US09/379,060 priority patent/US6169014B1/en
Priority to JP2000569433A priority patent/JP2002524874A/ja
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/381—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/381—Beam shaping, e.g. using a mask
    • H10P14/3812—Shape of mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/382—Scanning of a beam
GBGB9819338.6A 1998-09-04 1998-09-04 Laser crystallisation of thin films Ceased GB9819338D0 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GBGB9819338.6A GB9819338D0 (en) 1998-09-04 1998-09-04 Laser crystallisation of thin films
EP99944473A EP1048061A1 (en) 1998-09-04 1999-08-23 Double-pulse laser crystallisation of thin semiconductor films
PCT/EP1999/006161 WO2000014784A1 (en) 1998-09-04 1999-08-23 Double-pulse laser crystallisation of thin semiconductor films
US09/379,060 US6169014B1 (en) 1998-09-04 1999-08-23 Laser crystallization of thin films
JP2000569433A JP2002524874A (ja) 1998-09-04 1999-08-23 薄い半導体膜の二重パルスレーザー結晶化

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB9819338.6A GB9819338D0 (en) 1998-09-04 1998-09-04 Laser crystallisation of thin films

Publications (1)

Publication Number Publication Date
GB9819338D0 true GB9819338D0 (en) 1998-10-28

Family

ID=10838370

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB9819338.6A Ceased GB9819338D0 (en) 1998-09-04 1998-09-04 Laser crystallisation of thin films

Country Status (5)

Country Link
US (1) US6169014B1 (enExample)
EP (1) EP1048061A1 (enExample)
JP (1) JP2002524874A (enExample)
GB (1) GB9819338D0 (enExample)
WO (1) WO2000014784A1 (enExample)

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US6281471B1 (en) * 1999-12-28 2001-08-28 Gsi Lumonics, Inc. Energy-efficient, laser-based method and system for processing target material
US7723642B2 (en) * 1999-12-28 2010-05-25 Gsi Group Corporation Laser-based system for memory link processing with picosecond lasers
US20040134894A1 (en) * 1999-12-28 2004-07-15 Bo Gu Laser-based system for memory link processing with picosecond lasers
US7838794B2 (en) 1999-12-28 2010-11-23 Gsi Group Corporation Laser-based method and system for removing one or more target link structures
KR100671212B1 (ko) * 1999-12-31 2007-01-18 엘지.필립스 엘시디 주식회사 폴리실리콘 형성방법
US20060141681A1 (en) * 2000-01-10 2006-06-29 Yunlong Sun Processing a memory link with a set of at least two laser pulses
US20030222324A1 (en) * 2000-01-10 2003-12-04 Yunlong Sun Laser systems for passivation or link processing with a set of laser pulses
US7671295B2 (en) * 2000-01-10 2010-03-02 Electro Scientific Industries, Inc. Processing a memory link with a set of at least two laser pulses
US6368945B1 (en) * 2000-03-16 2002-04-09 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification
WO2001071791A1 (en) * 2000-03-21 2001-09-27 The Trustees Of Columbia University In The City Of New York Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
US6830993B1 (en) * 2000-03-21 2004-12-14 The Trustees Of Columbia University In The City Of New York Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
US7115503B2 (en) 2000-10-10 2006-10-03 The Trustees Of Columbia University In The City Of New York Method and apparatus for processing thin metal layers
CN1200320C (zh) 2000-11-27 2005-05-04 纽约市哥伦比亚大学托管会 用激光结晶化法加工衬底上半导体薄膜区域的方法和掩模投影系统
US6777645B2 (en) * 2001-03-29 2004-08-17 Gsi Lumonics Corporation High-speed, precision, laser-based method and system for processing material of one or more targets within a field
US6908835B2 (en) * 2001-04-19 2005-06-21 The Trustees Of Columbia University In The City Of New York Method and system for providing a single-scan, continuous motion sequential lateral solidification
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TW556350B (en) * 2001-08-27 2003-10-01 Univ Columbia A method to increase device-to-device uniformity for polycrystalline thin-film transistors by deliberately mis-aligning the microstructure relative to the channel region
JP4006994B2 (ja) * 2001-12-18 2007-11-14 株式会社リコー 立体構造体の加工方法、立体形状品の製造方法及び立体構造体
US6951995B2 (en) 2002-03-27 2005-10-04 Gsi Lumonics Corp. Method and system for high-speed, precise micromachining an array of devices
WO2003084688A2 (en) 2002-04-01 2003-10-16 The Trustees Of Columbia University In The City Of New York Method and system for providing a thin film
WO2004017381A2 (en) * 2002-08-19 2004-02-26 The Trustees Of Columbia University In The City Of New York Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and structure of such film regions
WO2004017382A2 (en) 2002-08-19 2004-02-26 The Trustees Of Columbia University In The City Of New York Process and system for laser crystallization processing of film regions on a substrate to provide substantial uniformity within areas in such regions and edge areas thereof, and a structure of such film regions
JP4879486B2 (ja) * 2002-08-19 2012-02-22 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 基板上のフィルム領域をレーザ結晶化処理してほぼ均一にするプロセス及びシステム、及びこのフィルム領域の構造
AU2003258289A1 (en) 2002-08-19 2004-03-03 The Trustees Of Columbia University In The City Of New York A single-shot semiconductor processing system and method having various irradiation patterns
WO2004075263A2 (en) * 2003-02-19 2004-09-02 The Trustees Of Columbia University In The City Of New York System and process for processing a plurality of semiconductor thin films which are crystallized using sequential lateral solidification techniques
CN100593292C (zh) * 2003-08-19 2010-03-03 电子科学工业公司 产生定制的激光脉冲组
WO2005029546A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination
WO2005029551A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
US7318866B2 (en) 2003-09-16 2008-01-15 The Trustees Of Columbia University In The City Of New York Systems and methods for inducing crystallization of thin films using multiple optical paths
US7364952B2 (en) * 2003-09-16 2008-04-29 The Trustees Of Columbia University In The City Of New York Systems and methods for processing thin films
WO2005029550A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for producing crystalline thin films with a uniform crystalline orientation
US7164152B2 (en) * 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
WO2005029548A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York System and process for providing multiple beam sequential lateral solidification
WO2005029549A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for facilitating bi-directional growth
TWI366859B (en) 2003-09-16 2012-06-21 Univ Columbia System and method of enhancing the width of polycrystalline grains produced via sequential lateral solidification using a modified mask pattern
WO2005034193A2 (en) 2003-09-19 2005-04-14 The Trustees Of Columbia University In The City Ofnew York Single scan irradiation for crystallization of thin films
US7139294B2 (en) * 2004-05-14 2006-11-21 Electro Scientific Industries, Inc. Multi-output harmonic laser and methods employing same
US7645337B2 (en) * 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
US20060128073A1 (en) * 2004-12-09 2006-06-15 Yunlong Sun Multiple-wavelength laser micromachining of semiconductor devices
US7301981B2 (en) * 2004-12-09 2007-11-27 Electro Scientific Industries, Inc. Methods for synchronized pulse shape tailoring
US20060191884A1 (en) * 2005-01-21 2006-08-31 Johnson Shepard D High-speed, precise, laser-based material processing method and system
US8221544B2 (en) 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
DE602006004913D1 (de) * 2005-04-28 2009-03-12 Semiconductor Energy Lab Verfahren und Vorrichtung zur Herstellung von Halbleitern mittels Laserstrahlung
EP1927127A2 (en) * 2005-08-16 2008-06-04 The Trustees of Columbia University in the City of New York High throughput crystallization of thin films
US8598588B2 (en) * 2005-12-05 2013-12-03 The Trustees Of Columbia University In The City Of New York Systems and methods for processing a film, and thin films
US8846551B2 (en) 2005-12-21 2014-09-30 University Of Virginia Patent Foundation Systems and methods of laser texturing of material surfaces and their applications
WO2008091242A2 (en) * 2005-12-21 2008-07-31 Uva Patent Foundation Systems and methods of laser texturing and crystallization of material surfaces
WO2008127807A1 (en) * 2007-03-09 2008-10-23 University Of Virginia Patent Foundation Systems and methods of laser texturing of material surfaces and their applications
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US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
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Also Published As

Publication number Publication date
JP2002524874A (ja) 2002-08-06
US6169014B1 (en) 2001-01-02
WO2000014784A1 (en) 2000-03-16
EP1048061A1 (en) 2000-11-02

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Legal Events

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