JP2002524874A5 - - Google Patents

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Publication number
JP2002524874A5
JP2002524874A5 JP2000569433A JP2000569433A JP2002524874A5 JP 2002524874 A5 JP2002524874 A5 JP 2002524874A5 JP 2000569433 A JP2000569433 A JP 2000569433A JP 2000569433 A JP2000569433 A JP 2000569433A JP 2002524874 A5 JP2002524874 A5 JP 2002524874A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000569433A
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Japanese (ja)
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JP2002524874A (ja
Filing date
Publication date
Priority claimed from GBGB9819338.6A external-priority patent/GB9819338D0/en
Application filed filed Critical
Publication of JP2002524874A publication Critical patent/JP2002524874A/ja
Publication of JP2002524874A5 publication Critical patent/JP2002524874A5/ja
Pending legal-status Critical Current

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JP2000569433A 1998-09-04 1999-08-23 薄い半導体膜の二重パルスレーザー結晶化 Pending JP2002524874A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB9819338.6 1998-09-04
GBGB9819338.6A GB9819338D0 (en) 1998-09-04 1998-09-04 Laser crystallisation of thin films
PCT/EP1999/006161 WO2000014784A1 (en) 1998-09-04 1999-08-23 Double-pulse laser crystallisation of thin semiconductor films

Publications (2)

Publication Number Publication Date
JP2002524874A JP2002524874A (ja) 2002-08-06
JP2002524874A5 true JP2002524874A5 (enExample) 2006-10-12

Family

ID=10838370

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000569433A Pending JP2002524874A (ja) 1998-09-04 1999-08-23 薄い半導体膜の二重パルスレーザー結晶化

Country Status (5)

Country Link
US (1) US6169014B1 (enExample)
EP (1) EP1048061A1 (enExample)
JP (1) JP2002524874A (enExample)
GB (1) GB9819338D0 (enExample)
WO (1) WO2000014784A1 (enExample)

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WO2004017381A2 (en) * 2002-08-19 2004-02-26 The Trustees Of Columbia University In The City Of New York Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and structure of such film regions
WO2004017382A2 (en) 2002-08-19 2004-02-26 The Trustees Of Columbia University In The City Of New York Process and system for laser crystallization processing of film regions on a substrate to provide substantial uniformity within areas in such regions and edge areas thereof, and a structure of such film regions
JP4879486B2 (ja) * 2002-08-19 2012-02-22 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 基板上のフィルム領域をレーザ結晶化処理してほぼ均一にするプロセス及びシステム、及びこのフィルム領域の構造
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WO2004075263A2 (en) * 2003-02-19 2004-09-02 The Trustees Of Columbia University In The City Of New York System and process for processing a plurality of semiconductor thin films which are crystallized using sequential lateral solidification techniques
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WO2005029546A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination
WO2005029551A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
US7318866B2 (en) 2003-09-16 2008-01-15 The Trustees Of Columbia University In The City Of New York Systems and methods for inducing crystallization of thin films using multiple optical paths
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WO2005029550A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for producing crystalline thin films with a uniform crystalline orientation
US7164152B2 (en) * 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
WO2005029548A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York System and process for providing multiple beam sequential lateral solidification
WO2005029549A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for facilitating bi-directional growth
TWI366859B (en) 2003-09-16 2012-06-21 Univ Columbia System and method of enhancing the width of polycrystalline grains produced via sequential lateral solidification using a modified mask pattern
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KR20100132020A (ko) * 2008-02-29 2010-12-16 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 균일한 결정질 ｓｉ 막들을 제조하는 리소그래피 방법
JP2011515833A (ja) * 2008-02-29 2011-05-19 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 薄膜のためのフラッシュ光アニーリング
WO2010056990A1 (en) 2008-11-14 2010-05-20 The Trustees Of Columbia University In The City Of New York Systems and methods for the crystallization of thin films
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
EP2504059A4 (en) * 2009-11-24 2014-01-22 Univ Columbia SYSTEMS AND METHOD FOR SEQUENTIAL SIDE FIXING WITH NONPERIODIC IMPULSES
TWI528418B (zh) 2009-11-30 2016-04-01 應用材料股份有限公司 在半導體應用上的結晶處理
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