JP2002518851A - 量子ワイヤー電界効果トランジスタ及びその製造方法 - Google Patents

量子ワイヤー電界効果トランジスタ及びその製造方法

Info

Publication number
JP2002518851A
JP2002518851A JP2000555300A JP2000555300A JP2002518851A JP 2002518851 A JP2002518851 A JP 2002518851A JP 2000555300 A JP2000555300 A JP 2000555300A JP 2000555300 A JP2000555300 A JP 2000555300A JP 2002518851 A JP2002518851 A JP 2002518851A
Authority
JP
Japan
Prior art keywords
semiconductor
conductive means
transistor
groove
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2000555300A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002518851A5 (enExample
Inventor
ジョン ヘンリー ジェファーソン
ティモシー ジョナサン フィリップス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UK Secretary of State for Defence
Original Assignee
UK Secretary of State for Defence
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by UK Secretary of State for Defence filed Critical UK Secretary of State for Defence
Publication of JP2002518851A publication Critical patent/JP2002518851A/ja
Publication of JP2002518851A5 publication Critical patent/JP2002518851A5/ja
Abandoned legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/014—Manufacture or treatment of FETs having zero-dimensional [0D] or one-dimensional [1D] channels, e.g. quantum wire FETs, single-electron transistors [SET] or Coulomb blockade transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/402—Single electron transistors; Coulomb blockade transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/43—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 1D charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/812—Single quantum well structures
    • H10D62/813—Quantum wire structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/812—Single quantum well structures
    • H10D62/814—Quantum box structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
    • Y10S977/937—Single electron transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
JP2000555300A 1998-06-19 1999-06-18 量子ワイヤー電界効果トランジスタ及びその製造方法 Abandoned JP2002518851A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB9813142.8 1998-06-19
GB9813142A GB2338592A (en) 1998-06-19 1998-06-19 Single electron transistor
PCT/GB1999/001940 WO1999066562A1 (en) 1998-06-19 1999-06-18 Quantum wire field-effect transistor and method of making the same

Publications (2)

Publication Number Publication Date
JP2002518851A true JP2002518851A (ja) 2002-06-25
JP2002518851A5 JP2002518851A5 (enExample) 2006-07-27

Family

ID=10833967

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2000555300A Abandoned JP2002518851A (ja) 1998-06-19 1999-06-18 量子ワイヤー電界効果トランジスタ及びその製造方法
JP2000555299A Expired - Fee Related JP4864202B2 (ja) 1998-06-19 1999-06-18 単一電荷キャリアトランジスタ、量子ドット内に電荷キャリアを保持する方法、及び検出方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2000555299A Expired - Fee Related JP4864202B2 (ja) 1998-06-19 1999-06-18 単一電荷キャリアトランジスタ、量子ドット内に電荷キャリアを保持する方法、及び検出方法

Country Status (5)

Country Link
US (2) US6753593B1 (enExample)
EP (2) EP1088346A1 (enExample)
JP (2) JP2002518851A (enExample)
GB (1) GB2338592A (enExample)
WO (2) WO1999066561A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7285794B2 (en) 2003-02-27 2007-10-23 Fujitsu Limited Quantum semiconductor device and method for fabricating the same
JP2008300848A (ja) * 2001-05-18 2008-12-11 President & Fellows Of Harvard College ナノスケールワイヤ及び関連デバイス
US7465595B2 (en) 2004-11-09 2008-12-16 Fujitsu Limited Quantum device, manufacturing method of the same and controlling method of the same

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6683337B2 (en) * 2001-02-09 2004-01-27 Micron Technology, Inc. Dynamic memory based on single electron storage
US6978070B1 (en) * 2001-08-14 2005-12-20 The Programmable Matter Corporation Fiber incorporating quantum dots as programmable dopants
JP4304338B2 (ja) * 2004-01-13 2009-07-29 独立行政法人産業技術総合研究所 光検出素子
CN101065845A (zh) 2004-06-04 2007-10-31 可编程物公司 包含作为可编程掺杂剂的量子点的层状复合薄膜
KR101045573B1 (ko) * 2005-07-06 2011-07-01 인터내쇼널 렉티파이어 코포레이션 Ⅲ족 질화물 인헨스먼트 모드 소자
US7358581B2 (en) * 2005-11-17 2008-04-15 Kulite Semiconductor Products, Inc. Quantum dot based pressure switch
US20070194297A1 (en) * 2006-02-17 2007-08-23 The Programmable Matter Corporation Quantum Dot Switching Device
US7601946B2 (en) * 2006-09-12 2009-10-13 Ravenbrick, Llc Electromagnetic sensor incorporating quantum confinement structures
US7768693B2 (en) 2007-01-24 2010-08-03 Ravenbrick Llc Thermally switched optical downconverting filter
US8363307B2 (en) * 2007-02-28 2013-01-29 Ravenbrick, Llc Multicolor light emitting device incorporating tunable quantum confinement devices
US7936500B2 (en) * 2007-03-02 2011-05-03 Ravenbrick Llc Wavelength-specific optical switch
EP2171520A4 (en) 2007-07-11 2011-09-07 Ravenbrick Llc REFLECTIVE OPTICAL SHUTTER WITH THERMAL SWITCHING
WO2009039423A1 (en) 2007-09-19 2009-03-26 Ravenbrick, Llc Low-emissivity window films and coatings incoporating nanoscale wire grids
US8169685B2 (en) 2007-12-20 2012-05-01 Ravenbrick, Llc Thermally switched absorptive window shutter
US8634137B2 (en) 2008-04-23 2014-01-21 Ravenbrick Llc Glare management of reflective and thermoreflective surfaces
US9116302B2 (en) 2008-06-19 2015-08-25 Ravenbrick Llc Optical metapolarizer device
CA2737041C (en) 2008-08-20 2013-10-15 Ravenbrick, Llc Methods for fabricating thermochromic filters
CN102460238A (zh) 2009-04-10 2012-05-16 雷文布里克有限责任公司 结合有宾主型结构的热切换滤光器
US8643795B2 (en) 2009-04-10 2014-02-04 Ravenbrick Llc Thermally switched optical filter incorporating a refractive optical structure
US8867132B2 (en) * 2009-10-30 2014-10-21 Ravenbrick Llc Thermochromic filters and stopband filters for use with same
AU2011235265A1 (en) 2010-03-29 2012-10-25 Ravenbrick Llc Polymer-stabilized thermotropic liquid crystal device
GB2480265B (en) * 2010-05-10 2013-10-02 Toshiba Res Europ Ltd A semiconductor device and a method of fabricating a semiconductor device
WO2011153214A2 (en) 2010-06-01 2011-12-08 Ravenbrick Llc Multifunctional building component
US8933488B2 (en) * 2010-12-03 2015-01-13 The Board Of Trustees Of The Leland Stanford Junior Univerity Heterostructure field effect transistor with same channel and barrier configuration for PMOS and NMOS
WO2013033608A2 (en) 2011-09-01 2013-03-07 Wil Mccarthy Thermotropic optical shutter incorporating coatable polarizers
US9859409B2 (en) * 2016-04-28 2018-01-02 International Business Machines Corporation Single-electron transistor with wrap-around gate

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1315865C (en) 1988-02-09 1993-04-06 Elyahou Kapon Semiconductor super lattice heterostructure fabrication methods, structures and devices
US5497015A (en) 1988-11-12 1996-03-05 Sony Corporation Quantum interference transistor
EP0386388A1 (en) 1989-03-10 1990-09-12 International Business Machines Corporation Method for the epitaxial growth of a semiconductor structure
EP0661733A2 (en) * 1993-12-21 1995-07-05 International Business Machines Corporation One dimensional silicon quantum wire devices and the method of manufacture thereof
GB2288274A (en) * 1994-03-31 1995-10-11 Sharp Kk Quantum device and method of making such a device
JPH07326730A (ja) 1994-05-31 1995-12-12 Mitsubishi Electric Corp 半導体装置，その製造方法，単一電子デバイス，及びその製造方法
JP3256091B2 (ja) * 1994-08-23 2002-02-12 株式会社日立製作所 結晶粒の形成方法および半導体装置
US5654558A (en) * 1994-11-14 1997-08-05 The United States Of America As Represented By The Secretary Of The Navy Interband lateral resonant tunneling transistor
GB2295272B (en) 1994-11-15 1998-01-14 Toshiba Cambridge Res Center Semiconductor device
JP3837674B2 (ja) * 1995-03-20 2006-10-25 富士通株式会社 量子半導体装置
DE19522351A1 (de) * 1995-06-20 1997-01-09 Max Planck Gesellschaft Verfahren zur Herstellung von Quantenstrukturen, insbesondere von Quantenpunkten und Tunnelbarrieren sowie Bauelemente mit solchen Quantenstrukturen
JPH1093109A (ja) * 1996-09-13 1998-04-10 Nippon Telegr & Teleph Corp <Ntt> クーロンブロッケイド素子とその製造方法
US5945686A (en) * 1997-04-28 1999-08-31 Hitachi, Ltd. Tunneling electronic device
KR100240629B1 (ko) * 1997-08-30 2000-01-15 정선종 테라급 집적이 가능한 대전효과 트랜지스터 및 그 제조방법
KR19990024760A (ko) * 1997-09-08 1999-04-06 정선종 양자세선 제조 방법
US6063688A (en) * 1997-09-29 2000-05-16 Intel Corporation Fabrication of deep submicron structures and quantum wire transistors using hard-mask transistor width definition

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008300848A (ja) * 2001-05-18 2008-12-11 President & Fellows Of Harvard College ナノスケールワイヤ及び関連デバイス
US7285794B2 (en) 2003-02-27 2007-10-23 Fujitsu Limited Quantum semiconductor device and method for fabricating the same
US7465595B2 (en) 2004-11-09 2008-12-16 Fujitsu Limited Quantum device, manufacturing method of the same and controlling method of the same
US7795694B2 (en) 2004-11-09 2010-09-14 Fujitsu Limited Quantum device, manufacturing method of the same and controlling method of the same

Also Published As

Publication number Publication date
JP4864202B2 (ja) 2012-02-01
EP1088347A1 (en) 2001-04-04
US6753593B1 (en) 2004-06-22
WO1999066561A1 (en) 1999-12-23
WO1999066562A1 (en) 1999-12-23
US6498354B1 (en) 2002-12-24
GB2338592A (en) 1999-12-22
EP1088346A1 (en) 2001-04-04
EP1088347B1 (en) 2011-11-23
GB9813142D0 (en) 1998-08-19
JP2002518850A (ja) 2002-06-25

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