JP2002510877A - 表面平坦化のための、表面への制御された多様な厚みの材料の蒸着 - Google Patents

表面平坦化のための、表面への制御された多様な厚みの材料の蒸着

Info

Publication number
JP2002510877A
JP2002510877A JP2000542790A JP2000542790A JP2002510877A JP 2002510877 A JP2002510877 A JP 2002510877A JP 2000542790 A JP2000542790 A JP 2000542790A JP 2000542790 A JP2000542790 A JP 2000542790A JP 2002510877 A JP2002510877 A JP 2002510877A
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JP
Japan
Prior art keywords
semiconductor
tool
height
database
profile
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000542790A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002510877A5 (https=
Inventor
ドーソン，ロバート
メイ，チャールズ・イー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of JP2002510877A publication Critical patent/JP2002510877A/ja
Publication of JP2002510877A5 publication Critical patent/JP2002510877A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/04—Planarisation of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Formation Of Insulating Films (AREA)
JP2000542790A 1998-04-06 1998-10-19 表面平坦化のための、表面への制御された多様な厚みの材料の蒸着 Pending JP2002510877A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/056,024 1998-04-06
US09/056,024 US6033921A (en) 1998-04-06 1998-04-06 Method for depositing a material of controlled, variable thickness across a surface for planarization of that surface
PCT/US1998/022003 WO1999052133A1 (en) 1998-04-06 1998-10-19 Depositing a material of controlled, variable thickness across a surface for planarization of that surface

Publications (2)

Publication Number Publication Date
JP2002510877A true JP2002510877A (ja) 2002-04-09
JP2002510877A5 JP2002510877A5 (https=) 2006-01-05

Family

ID=22001674

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000542790A Pending JP2002510877A (ja) 1998-04-06 1998-10-19 表面平坦化のための、表面への制御された多様な厚みの材料の蒸着

Country Status (5)

Country Link
US (2) US6033921A (https=)
EP (1) EP1070343A1 (https=)
JP (1) JP2002510877A (https=)
KR (1) KR20010042493A (https=)
WO (1) WO1999052133A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101733064B1 (ko) 2015-06-01 2017-05-08 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법, 기판 처리 시스템, 기판 처리 장치 및 기록 매체
CN107871711A (zh) * 2016-09-28 2018-04-03 株式会社日立国际电气 半导体器件的制造方法、衬底处理装置及记录介质
CN115667577A (zh) * 2020-06-15 2023-01-31 东京毅力科创株式会社 喷淋板及成膜装置

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6033921A (en) * 1998-04-06 2000-03-07 Advanced Micro Devices, Inc. Method for depositing a material of controlled, variable thickness across a surface for planarization of that surface
US6503767B2 (en) * 2000-12-19 2003-01-07 Speedfam-Ipec Corporation Process for monitoring a process, planarizing a surface, and for quantifying the results of a planarization process
US6996235B2 (en) * 2001-10-08 2006-02-07 Pitney Bowes Inc. Method and system for secure printing of documents via a printer coupled to the internet
US6921437B1 (en) * 2003-05-30 2005-07-26 Aviza Technology, Inc. Gas distribution system
JP6133347B2 (ja) * 2015-03-30 2017-05-24 株式会社日立国際電気 半導体装置の製造方法、基板処理システム及びプログラム
JP6109224B2 (ja) * 2015-03-30 2017-04-05 株式会社日立国際電気 半導体装置の製造方法、プログラムおよび基板処理装置
JP6072845B2 (ja) * 2015-03-31 2017-02-01 株式会社日立国際電気 半導体装置の製造方法、基板処理システム、基板処理装置及びプログラム
JP6126155B2 (ja) * 2015-03-31 2017-05-10 株式会社日立国際電気 半導体装置の製造方法、プログラムおよび基板処理装置
US20170040233A1 (en) * 2015-08-04 2017-02-09 Hitachi Kokusai Electric Inc. Substrate Processing Apparatus and Substrate Processing System
JP6151745B2 (ja) * 2015-08-04 2017-06-21 株式会社日立国際電気 基板処理装置、基板処理システム、半導体装置の製造方法、プログラム及び記録媒体
JP6153975B2 (ja) * 2015-08-07 2017-06-28 株式会社日立国際電気 半導体装置の製造方法、基板処理システム、プログラム、記録媒体および基板処理装置
CN114075661B (zh) * 2020-08-14 2022-11-18 长鑫存储技术有限公司 半导体沉积方法及半导体沉积系统

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6479399A (en) * 1987-09-22 1989-03-24 Nippon Steel Corp Production of metallic plate having colored pattern
JPH04212414A (ja) * 1990-08-16 1992-08-04 Fuji Electric Co Ltd プラズマ処理装置
JPH06177056A (ja) * 1992-12-09 1994-06-24 Hitachi Ltd ガス処理装置
JPH0922795A (ja) * 1995-07-04 1997-01-21 Sony Corp プラズマｃｖｄ装置およびプラズマｃｖｄ方法
JPH09205049A (ja) * 1996-01-23 1997-08-05 Kokusai Electric Co Ltd 成膜装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0582724A1 (de) * 1992-08-04 1994-02-16 Siemens Aktiengesellschaft Verfahren zur lokal und global planarisierenden CVD-Abscheidung von SiO2-Schichten auf strukturierten Siliziumsubstraten
US5419803A (en) * 1993-11-17 1995-05-30 Hughes Aircraft Company Method of planarizing microstructures
US5731994A (en) * 1995-02-16 1998-03-24 Japan Energy Corporation Method of packing particles into vessels and apparatus therefor
US5665199A (en) * 1995-06-23 1997-09-09 Advanced Micro Devices, Inc. Methodology for developing product-specific interlayer dielectric polish processes
KR0165320B1 (ko) * 1995-12-27 1999-02-01 김광호 반도체 산화 공정의 소크타임 설정 방법
US6033921A (en) * 1998-04-06 2000-03-07 Advanced Micro Devices, Inc. Method for depositing a material of controlled, variable thickness across a surface for planarization of that surface

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6479399A (en) * 1987-09-22 1989-03-24 Nippon Steel Corp Production of metallic plate having colored pattern
JPH04212414A (ja) * 1990-08-16 1992-08-04 Fuji Electric Co Ltd プラズマ処理装置
JPH06177056A (ja) * 1992-12-09 1994-06-24 Hitachi Ltd ガス処理装置
JPH0922795A (ja) * 1995-07-04 1997-01-21 Sony Corp プラズマｃｖｄ装置およびプラズマｃｖｄ方法
JPH09205049A (ja) * 1996-01-23 1997-08-05 Kokusai Electric Co Ltd 成膜装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101733064B1 (ko) 2015-06-01 2017-05-08 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법, 기판 처리 시스템, 기판 처리 장치 및 기록 매체
CN107871711A (zh) * 2016-09-28 2018-04-03 株式会社日立国际电气 半导体器件的制造方法、衬底处理装置及记录介质
JP2018056281A (ja) * 2016-09-28 2018-04-05 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
CN115667577A (zh) * 2020-06-15 2023-01-31 东京毅力科创株式会社 喷淋板及成膜装置
KR20230019202A (ko) 2020-06-15 2023-02-07 도쿄엘렉트론가부시키가이샤 샤워 플레이트 및 성막 장치
US12529139B2 (en) 2020-06-15 2026-01-20 Tokyo Electron Limited Shower plate and film deposition apparatus

Also Published As

Publication number Publication date
US6033921A (en) 2000-03-07
EP1070343A1 (en) 2001-01-24
KR20010042493A (ko) 2001-05-25
WO1999052133A1 (en) 1999-10-14
US6184986B1 (en) 2001-02-06

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