KR20010042493A - 표면 평탄화를 위하여 그 표면 전반에 대한 제어되는 가변두께 물질의 증착 - Google Patents

표면 평탄화를 위하여 그 표면 전반에 대한 제어되는 가변두께 물질의 증착 Download PDF

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Publication number
KR20010042493A
KR20010042493A KR1020007011118A KR20007011118A KR20010042493A KR 20010042493 A KR20010042493 A KR 20010042493A KR 1020007011118 A KR1020007011118 A KR 1020007011118A KR 20007011118 A KR20007011118 A KR 20007011118A KR 20010042493 A KR20010042493 A KR 20010042493A
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South Korea
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semiconductor topography
topography
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database
Prior art date
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English (en)
Korean (ko)
Inventor
도슨로버트
메이찰스이.
Original Assignee
토토라노 제이. 빈센트
어드밴스드 마이크로 디바이시즈, 인코포레이티드
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Application filed by 토토라노 제이. 빈센트, 어드밴스드 마이크로 디바이시즈, 인코포레이티드 filed Critical 토토라노 제이. 빈센트
Publication of KR20010042493A publication Critical patent/KR20010042493A/ko
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/04—Planarisation of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Formation Of Insulating Films (AREA)
KR1020007011118A 1998-04-06 1998-10-19 표면 평탄화를 위하여 그 표면 전반에 대한 제어되는 가변두께 물질의 증착 Withdrawn KR20010042493A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/056,024 US6033921A (en) 1998-04-06 1998-04-06 Method for depositing a material of controlled, variable thickness across a surface for planarization of that surface
US9/056,024 1998-04-06
PCT/US1998/022003 WO1999052133A1 (en) 1998-04-06 1998-10-19 Depositing a material of controlled, variable thickness across a surface for planarization of that surface

Publications (1)

Publication Number Publication Date
KR20010042493A true KR20010042493A (ko) 2001-05-25

Family

ID=22001674

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020007011118A Withdrawn KR20010042493A (ko) 1998-04-06 1998-10-19 표면 평탄화를 위하여 그 표면 전반에 대한 제어되는 가변두께 물질의 증착

Country Status (5)

Country Link
US (2) US6033921A (https=)
EP (1) EP1070343A1 (https=)
JP (1) JP2002510877A (https=)
KR (1) KR20010042493A (https=)
WO (1) WO1999052133A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6033921A (en) * 1998-04-06 2000-03-07 Advanced Micro Devices, Inc. Method for depositing a material of controlled, variable thickness across a surface for planarization of that surface
US6503767B2 (en) * 2000-12-19 2003-01-07 Speedfam-Ipec Corporation Process for monitoring a process, planarizing a surface, and for quantifying the results of a planarization process
US6996235B2 (en) * 2001-10-08 2006-02-07 Pitney Bowes Inc. Method and system for secure printing of documents via a printer coupled to the internet
US6921437B1 (en) * 2003-05-30 2005-07-26 Aviza Technology, Inc. Gas distribution system
JP6133347B2 (ja) * 2015-03-30 2017-05-24 株式会社日立国際電気 半導体装置の製造方法、基板処理システム及びプログラム
JP6109224B2 (ja) * 2015-03-30 2017-04-05 株式会社日立国際電気 半導体装置の製造方法、プログラムおよび基板処理装置
JP6072845B2 (ja) * 2015-03-31 2017-02-01 株式会社日立国際電気 半導体装置の製造方法、基板処理システム、基板処理装置及びプログラム
JP6126155B2 (ja) * 2015-03-31 2017-05-10 株式会社日立国際電気 半導体装置の製造方法、プログラムおよび基板処理装置
JP6321579B2 (ja) 2015-06-01 2018-05-09 株式会社日立国際電気 半導体装置の製造方法、基板処理システム、基板処理装置及びプログラム
US20170040233A1 (en) * 2015-08-04 2017-02-09 Hitachi Kokusai Electric Inc. Substrate Processing Apparatus and Substrate Processing System
JP6151745B2 (ja) * 2015-08-04 2017-06-21 株式会社日立国際電気 基板処理装置、基板処理システム、半導体装置の製造方法、プログラム及び記録媒体
JP6153975B2 (ja) * 2015-08-07 2017-06-28 株式会社日立国際電気 半導体装置の製造方法、基板処理システム、プログラム、記録媒体および基板処理装置
JP6549074B2 (ja) * 2016-09-28 2019-07-24 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
JP7540864B2 (ja) 2020-06-15 2024-08-27 東京エレクトロン株式会社 シャワープレート及び成膜装置
CN114075661B (zh) * 2020-08-14 2022-11-18 长鑫存储技术有限公司 半导体沉积方法及半导体沉积系统

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6479399A (en) * 1987-09-22 1989-03-24 Nippon Steel Corp Production of metallic plate having colored pattern
JPH04212414A (ja) * 1990-08-16 1992-08-04 Fuji Electric Co Ltd プラズマ処理装置
EP0582724A1 (de) * 1992-08-04 1994-02-16 Siemens Aktiengesellschaft Verfahren zur lokal und global planarisierenden CVD-Abscheidung von SiO2-Schichten auf strukturierten Siliziumsubstraten
JP3103227B2 (ja) * 1992-12-09 2000-10-30 株式会社日立製作所 半導体装置の製造方法
US5419803A (en) * 1993-11-17 1995-05-30 Hughes Aircraft Company Method of planarizing microstructures
US5731994A (en) * 1995-02-16 1998-03-24 Japan Energy Corporation Method of packing particles into vessels and apparatus therefor
US5665199A (en) * 1995-06-23 1997-09-09 Advanced Micro Devices, Inc. Methodology for developing product-specific interlayer dielectric polish processes
JPH0922795A (ja) * 1995-07-04 1997-01-21 Sony Corp プラズマｃｖｄ装置およびプラズマｃｖｄ方法
KR0165320B1 (ko) * 1995-12-27 1999-02-01 김광호 반도체 산화 공정의 소크타임 설정 방법
JPH09205049A (ja) * 1996-01-23 1997-08-05 Kokusai Electric Co Ltd 成膜装置
US6033921A (en) * 1998-04-06 2000-03-07 Advanced Micro Devices, Inc. Method for depositing a material of controlled, variable thickness across a surface for planarization of that surface

Also Published As

Publication number Publication date
US6033921A (en) 2000-03-07
JP2002510877A (ja) 2002-04-09
EP1070343A1 (en) 2001-01-24
WO1999052133A1 (en) 1999-10-14
US6184986B1 (en) 2001-02-06

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