JP2002508594A - メモリセル装置及びその製造方法 - Google Patents
メモリセル装置及びその製造方法Info
- Publication number
- JP2002508594A JP2002508594A JP2000538387A JP2000538387A JP2002508594A JP 2002508594 A JP2002508594 A JP 2002508594A JP 2000538387 A JP2000538387 A JP 2000538387A JP 2000538387 A JP2000538387 A JP 2000538387A JP 2002508594 A JP2002508594 A JP 2002508594A
- Authority
- JP
- Japan
- Prior art keywords
- memory cell
- memory cells
- cell device
- semiconductor substrate
- bit lines
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 35
- 238000002955 isolation Methods 0.000 claims abstract description 10
- 238000005530 etching Methods 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910021332 silicide Inorganic materials 0.000 claims description 7
- 238000005468 ion implantation Methods 0.000 claims 1
- 150000002736 metal compounds Chemical class 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 239000002019 doping agent Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 238000002513 implantation Methods 0.000 description 7
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910021340 platinum monosilicide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/18—Bit line organisation; Bit line lay-out
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19812948 | 1998-03-24 | ||
| DE19812948.3 | 1998-03-24 | ||
| PCT/DE1999/000762 WO1999049516A1 (de) | 1998-03-24 | 1999-03-17 | Speicherzellenanordnung und verfahren zu ihrer herstellung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002508594A true JP2002508594A (ja) | 2002-03-19 |
| JP2002508594A5 JP2002508594A5 (enExample) | 2009-03-26 |
Family
ID=7862152
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000538387A Pending JP2002508594A (ja) | 1998-03-24 | 1999-03-17 | メモリセル装置及びその製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6365944B1 (enExample) |
| EP (1) | EP1068644B1 (enExample) |
| JP (1) | JP2002508594A (enExample) |
| KR (1) | KR100623144B1 (enExample) |
| CN (1) | CN1165999C (enExample) |
| TW (1) | TW432700B (enExample) |
| WO (1) | WO1999049516A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7749840B2 (en) | 2006-06-09 | 2010-07-06 | Samsung Electronics Co., Ltd. | Methods of forming a semiconductor device including buried bit line |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1080499A1 (en) * | 1999-03-09 | 2001-03-07 | Koninklijke Philips Electronics N.V. | Semiconductor device comprising a non-volatile memory |
| JP4730999B2 (ja) * | 2000-03-10 | 2011-07-20 | スパンション エルエルシー | 不揮発性メモリの製造方法 |
| DE10051483A1 (de) * | 2000-10-17 | 2002-05-02 | Infineon Technologies Ag | Nichtflüchtige Halbleiterspeicherzellenanordnung und Verfahren zu deren Herstellung |
| US6580120B2 (en) * | 2001-06-07 | 2003-06-17 | Interuniversitair Microelektronica Centrum (Imec Vzw) | Two bit non-volatile electrically erasable and programmable memory structure, a process for producing said memory structure and methods for programming, reading and erasing said memory structure |
| US6630384B1 (en) * | 2001-10-05 | 2003-10-07 | Advanced Micro Devices, Inc. | Method of fabricating double densed core gates in sonos flash memory |
| JP3967193B2 (ja) * | 2002-05-21 | 2007-08-29 | スパンション エルエルシー | 不揮発性半導体記憶装置及びその製造方法 |
| US7423310B2 (en) * | 2004-09-29 | 2008-09-09 | Infineon Technologies Ag | Charge-trapping memory cell and charge-trapping memory device |
| US7804126B2 (en) | 2005-07-18 | 2010-09-28 | Saifun Semiconductors Ltd. | Dense non-volatile memory array and method of fabrication |
| US8441063B2 (en) * | 2010-12-30 | 2013-05-14 | Spansion Llc | Memory with extended charge trapping layer |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4651184A (en) * | 1984-08-31 | 1987-03-17 | Texas Instruments Incorporated | Dram cell and array |
| JP2596198B2 (ja) | 1990-08-30 | 1997-04-02 | 日本電気株式会社 | Ｍｏｓ型読み出し専用半導体記憶装置 |
| JPH05102436A (ja) * | 1991-10-09 | 1993-04-23 | Ricoh Co Ltd | 半導体メモリ装置とその製造方法 |
| US5278438A (en) | 1991-12-19 | 1994-01-11 | North American Philips Corporation | Electrically erasable and programmable read-only memory with source and drain regions along sidewalls of a trench structure |
| DE19510042C2 (de) | 1995-03-20 | 1997-01-23 | Siemens Ag | Festwert-Speicherzellenanordnung und Verfahren zu deren Herstellung |
| DE19514834C1 (de) * | 1995-04-21 | 1997-01-09 | Siemens Ag | Festwertspeicherzellenanordnung und Verfahren zu deren Herstellung |
| KR0179807B1 (ko) * | 1995-12-30 | 1999-03-20 | 문정환 | 반도체 기억소자 제조방법 |
| KR100215840B1 (ko) * | 1996-02-28 | 1999-08-16 | 구본준 | 반도체 메모리셀 구조 및 제조방법 |
| US6118147A (en) * | 1998-07-07 | 2000-09-12 | Advanced Micro Devices, Inc. | Double density non-volatile memory cells |
| US6207493B1 (en) * | 1998-08-19 | 2001-03-27 | International Business Machines Corporation | Formation of out-diffused bitline by laser anneal |
-
1999
- 1999-03-17 JP JP2000538387A patent/JP2002508594A/ja active Pending
- 1999-03-17 WO PCT/DE1999/000762 patent/WO1999049516A1/de not_active Ceased
- 1999-03-17 KR KR1020007010546A patent/KR100623144B1/ko not_active Expired - Fee Related
- 1999-03-17 CN CNB998044148A patent/CN1165999C/zh not_active Expired - Fee Related
- 1999-03-17 EP EP99914440.5A patent/EP1068644B1/de not_active Expired - Lifetime
- 1999-03-22 TW TW088104477A patent/TW432700B/zh not_active IP Right Cessation
-
2000
- 2000-09-25 US US09/668,485 patent/US6365944B1/en not_active Expired - Lifetime
-
2001
- 2001-12-03 US US10/005,978 patent/US6534362B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7749840B2 (en) | 2006-06-09 | 2010-07-06 | Samsung Electronics Co., Ltd. | Methods of forming a semiconductor device including buried bit line |
| US7846796B2 (en) | 2006-06-09 | 2010-12-07 | Samsung Electronics Co., Ltd. | Semiconductor devices including buried bit lines |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20010042141A (ko) | 2001-05-25 |
| WO1999049516A1 (de) | 1999-09-30 |
| US6365944B1 (en) | 2002-04-02 |
| KR100623144B1 (ko) | 2006-09-12 |
| TW432700B (en) | 2001-05-01 |
| EP1068644A1 (de) | 2001-01-17 |
| CN1165999C (zh) | 2004-09-08 |
| CN1294759A (zh) | 2001-05-09 |
| US20020055247A1 (en) | 2002-05-09 |
| US6534362B2 (en) | 2003-03-18 |
| EP1068644B1 (de) | 2015-07-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060224 |
|
| A977 | Report on retrieval |
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| A131 | Notification of reasons for refusal |
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| A601 | Written request for extension of time |
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| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20090108 |
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| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090130 |
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| A524 | Written submission of copy of amendment under article 19 pct |
Free format text: JAPANESE INTERMEDIATE CODE: A524 Effective date: 20090130 |
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| A02 | Decision of refusal |
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