JP2002508594A5 - - Google Patents
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- Publication number
- JP2002508594A5 JP2002508594A5 JP2000538387A JP2000538387A JP2002508594A5 JP 2002508594 A5 JP2002508594 A5 JP 2002508594A5 JP 2000538387 A JP2000538387 A JP 2000538387A JP 2000538387 A JP2000538387 A JP 2000538387A JP 2002508594 A5 JP2002508594 A5 JP 2002508594A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19812948.3 | 1998-03-24 | ||
| DE19812948 | 1998-03-24 | ||
| PCT/DE1999/000762 WO1999049516A1 (de) | 1998-03-24 | 1999-03-17 | Speicherzellenanordnung und verfahren zu ihrer herstellung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002508594A JP2002508594A (ja) | 2002-03-19 |
| JP2002508594A5 true JP2002508594A5 (enExample) | 2009-03-26 |
Family
ID=7862152
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000538387A Pending JP2002508594A (ja) | 1998-03-24 | 1999-03-17 | メモリセル装置及びその製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6365944B1 (enExample) |
| EP (1) | EP1068644B1 (enExample) |
| JP (1) | JP2002508594A (enExample) |
| KR (1) | KR100623144B1 (enExample) |
| CN (1) | CN1165999C (enExample) |
| TW (1) | TW432700B (enExample) |
| WO (1) | WO1999049516A1 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100699608B1 (ko) | 1999-03-09 | 2007-03-23 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 비휘발성 메모리를 포함하는 반도체 디바이스 |
| JP4730999B2 (ja) * | 2000-03-10 | 2011-07-20 | スパンション エルエルシー | 不揮発性メモリの製造方法 |
| DE10051483A1 (de) * | 2000-10-17 | 2002-05-02 | Infineon Technologies Ag | Nichtflüchtige Halbleiterspeicherzellenanordnung und Verfahren zu deren Herstellung |
| US6580120B2 (en) * | 2001-06-07 | 2003-06-17 | Interuniversitair Microelektronica Centrum (Imec Vzw) | Two bit non-volatile electrically erasable and programmable memory structure, a process for producing said memory structure and methods for programming, reading and erasing said memory structure |
| US6630384B1 (en) * | 2001-10-05 | 2003-10-07 | Advanced Micro Devices, Inc. | Method of fabricating double densed core gates in sonos flash memory |
| JP3967193B2 (ja) * | 2002-05-21 | 2007-08-29 | スパンション エルエルシー | 不揮発性半導体記憶装置及びその製造方法 |
| US7423310B2 (en) * | 2004-09-29 | 2008-09-09 | Infineon Technologies Ag | Charge-trapping memory cell and charge-trapping memory device |
| US7786512B2 (en) * | 2005-07-18 | 2010-08-31 | Saifun Semiconductors Ltd. | Dense non-volatile memory array and method of fabrication |
| KR100739532B1 (ko) | 2006-06-09 | 2007-07-13 | 삼성전자주식회사 | 매몰 비트라인 형성 방법 |
| US8441063B2 (en) * | 2010-12-30 | 2013-05-14 | Spansion Llc | Memory with extended charge trapping layer |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4651184A (en) * | 1984-08-31 | 1987-03-17 | Texas Instruments Incorporated | Dram cell and array |
| JP2596198B2 (ja) | 1990-08-30 | 1997-04-02 | 日本電気株式会社 | Ｍｏｓ型読み出し専用半導体記憶装置 |
| JPH05102436A (ja) * | 1991-10-09 | 1993-04-23 | Ricoh Co Ltd | 半導体メモリ装置とその製造方法 |
| US5278438A (en) * | 1991-12-19 | 1994-01-11 | North American Philips Corporation | Electrically erasable and programmable read-only memory with source and drain regions along sidewalls of a trench structure |
| DE19510042C2 (de) | 1995-03-20 | 1997-01-23 | Siemens Ag | Festwert-Speicherzellenanordnung und Verfahren zu deren Herstellung |
| DE19514834C1 (de) * | 1995-04-21 | 1997-01-09 | Siemens Ag | Festwertspeicherzellenanordnung und Verfahren zu deren Herstellung |
| KR0179807B1 (ko) * | 1995-12-30 | 1999-03-20 | 문정환 | 반도체 기억소자 제조방법 |
| KR100215840B1 (ko) * | 1996-02-28 | 1999-08-16 | 구본준 | 반도체 메모리셀 구조 및 제조방법 |
| US6118147A (en) * | 1998-07-07 | 2000-09-12 | Advanced Micro Devices, Inc. | Double density non-volatile memory cells |
| US6207493B1 (en) * | 1998-08-19 | 2001-03-27 | International Business Machines Corporation | Formation of out-diffused bitline by laser anneal |
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1999
- 1999-03-17 EP EP99914440.5A patent/EP1068644B1/de not_active Expired - Lifetime
- 1999-03-17 WO PCT/DE1999/000762 patent/WO1999049516A1/de not_active Ceased
- 1999-03-17 KR KR1020007010546A patent/KR100623144B1/ko not_active Expired - Fee Related
- 1999-03-17 JP JP2000538387A patent/JP2002508594A/ja active Pending
- 1999-03-17 CN CNB998044148A patent/CN1165999C/zh not_active Expired - Fee Related
- 1999-03-22 TW TW088104477A patent/TW432700B/zh not_active IP Right Cessation
-
2000
- 2000-09-25 US US09/668,485 patent/US6365944B1/en not_active Expired - Lifetime
-
2001
- 2001-12-03 US US10/005,978 patent/US6534362B2/en not_active Expired - Lifetime