JP2002507058A - 低温直接ボンディングにより形成可能な装置 - Google Patents
低温直接ボンディングにより形成可能な装置Info
- Publication number
- JP2002507058A JP2002507058A JP2000536101A JP2000536101A JP2002507058A JP 2002507058 A JP2002507058 A JP 2002507058A JP 2000536101 A JP2000536101 A JP 2000536101A JP 2000536101 A JP2000536101 A JP 2000536101A JP 2002507058 A JP2002507058 A JP 2002507058A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- semiconductor device
- buffer
- forming
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000872 buffer Substances 0.000 claims abstract description 157
- 239000004065 semiconductor Substances 0.000 claims abstract description 119
- 239000002019 doping agent Substances 0.000 claims abstract description 108
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 71
- 239000010703 silicon Substances 0.000 claims abstract description 71
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 260
- 238000000034 method Methods 0.000 claims description 194
- 238000000137 annealing Methods 0.000 claims description 75
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 68
- 229910052751 metal Inorganic materials 0.000 claims description 65
- 239000002184 metal Substances 0.000 claims description 65
- 238000012545 processing Methods 0.000 claims description 64
- 230000002147 killing effect Effects 0.000 claims description 51
- 239000007943 implant Substances 0.000 claims description 32
- 230000008569 process Effects 0.000 claims description 30
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 23
- 229910052782 aluminium Inorganic materials 0.000 claims description 22
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- 238000005468 ion implantation Methods 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 15
- 230000004888 barrier function Effects 0.000 claims description 13
- 238000009792 diffusion process Methods 0.000 claims description 13
- 238000005247 gettering Methods 0.000 claims description 13
- 239000001257 hydrogen Substances 0.000 claims description 13
- 229910052739 hydrogen Inorganic materials 0.000 claims description 13
- 238000002513 implantation Methods 0.000 claims description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- 229930195733 hydrocarbon Natural products 0.000 claims description 11
- 150000002430 hydrocarbons Chemical class 0.000 claims description 11
- 229910052698 phosphorus Inorganic materials 0.000 claims description 11
- 239000011574 phosphorus Substances 0.000 claims description 11
- 238000004140 cleaning Methods 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 238000005498 polishing Methods 0.000 claims description 8
- 230000003746 surface roughness Effects 0.000 claims description 8
- 239000004215 Carbon black (E152) Substances 0.000 claims description 7
- 230000002411 adverse Effects 0.000 claims description 7
- 230000007547 defect Effects 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 229910052734 helium Inorganic materials 0.000 claims description 6
- 239000001307 helium Substances 0.000 claims description 6
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 230000003213 activating effect Effects 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 230000005669 field effect Effects 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 238000012360 testing method Methods 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 6
- 229910052742 iron Inorganic materials 0.000 claims 3
- 229910052759 nickel Inorganic materials 0.000 claims 3
- 229910052763 palladium Inorganic materials 0.000 claims 3
- 230000008018 melting Effects 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 76
- 238000013459 approach Methods 0.000 description 27
- 229910052796 boron Inorganic materials 0.000 description 11
- 239000000969 carrier Substances 0.000 description 11
- 230000002209 hydrophobic effect Effects 0.000 description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 10
- 230000006798 recombination Effects 0.000 description 10
- 238000000206 photolithography Methods 0.000 description 9
- 238000005215 recombination Methods 0.000 description 9
- 229910021332 silicide Inorganic materials 0.000 description 9
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 9
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 8
- 230000008901 benefit Effects 0.000 description 6
- 238000012937 correction Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 238000005036 potential barrier Methods 0.000 description 5
- 230000002829 reductive effect Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000002244 precipitate Substances 0.000 description 4
- 150000003377 silicon compounds Chemical class 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910052723 transition metal Inorganic materials 0.000 description 4
- 150000003624 transition metals Chemical class 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- -1 boron ions Chemical class 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 241000252506 Characiformes Species 0.000 description 2
- 229910002796 Si–Al Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 description 2
- 102100031102 C-C motif chemokine 4 Human genes 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 101000777471 Homo sapiens C-C motif chemokine 4 Proteins 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66363—Thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66416—Static induction transistors [SIT]
- H01L29/66424—Permeable base transistors [PBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thyristors (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/037,723 | 1998-03-09 | ||
| US09/037,723 US6194290B1 (en) | 1998-03-09 | 1998-03-09 | Methods for making semiconductor devices by low temperature direct bonding |
| US09/036,838 US6274892B1 (en) | 1998-03-09 | 1998-03-09 | Devices formable by low temperature direct bonding |
| US09/036,815 US6153495A (en) | 1998-03-09 | 1998-03-09 | Advanced methods for making semiconductor devices by low temperature direct bonding |
| US09/036,838 | 1998-03-09 | ||
| US09/036,815 | 1998-03-09 | ||
| PCT/US1999/005066 WO1999046809A1 (en) | 1998-03-09 | 1999-03-09 | Devices formable by low temperature direct bonding |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002507058A true JP2002507058A (ja) | 2002-03-05 |
Family
ID=27365101
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000536101A Withdrawn JP2002507058A (ja) | 1998-03-09 | 1999-03-09 | 低温直接ボンディングにより形成可能な装置 |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP1062692A1 (ko) |
| JP (1) | JP2002507058A (ko) |
| KR (1) | KR20010041822A (ko) |
| WO (1) | WO1999046809A1 (ko) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007535133A (ja) * | 2003-12-23 | 2007-11-29 | コミツサリア タ レネルジー アトミーク | オーミックコンタクトを介在させて形成することによって２つのプレートをシールするための方法 |
| JP2010034281A (ja) * | 2008-07-29 | 2010-02-12 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| US8329563B2 (en) | 2006-02-24 | 2012-12-11 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device including a gettering layer and manufacturing method therefor |
| JP2014523108A (ja) * | 2011-06-17 | 2014-09-08 | クリー インコーポレイテッド | 正の温度係数を有する光学補助トリガ式広バンドギャップサイリスタ |
| KR101512179B1 (ko) * | 2013-08-30 | 2015-04-16 | 메이플세미컨덕터(주) | 선택적 라이프 타임 컨트롤러가 구비된 mosfet의 제조방법 |
| WO2016147264A1 (ja) * | 2015-03-13 | 2016-09-22 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
| JP2017059837A (ja) * | 2016-10-25 | 2017-03-23 | 三菱電機株式会社 | 半導体装置の製造方法 |
| US9780660B2 (en) | 2013-05-10 | 2017-10-03 | Hitachi, Ltd. | Apparatus for controlling insulating gate-type semiconductor element, and power conversion apparatus using apparatus for controlling insulating gate-type semiconductor element |
| JP2018032694A (ja) * | 2016-08-23 | 2018-03-01 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| JP2018101745A (ja) * | 2016-12-21 | 2018-06-28 | 株式会社Sumco | ｐｎ接合シリコンウェーハの製造方法およびｐｎ接合シリコンウェーハ |
| US10475663B2 (en) | 2012-10-02 | 2019-11-12 | Mitsubishi Electric Corporation | Semiconductor device and method for manufacturing semiconductor device |
| JP2020061429A (ja) * | 2018-10-09 | 2020-04-16 | 三菱電機株式会社 | 半導体装置 |
| JP2020155581A (ja) * | 2019-03-20 | 2020-09-24 | 株式会社東芝 | 半導体装置 |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6902987B1 (en) | 2000-02-16 | 2005-06-07 | Ziptronix, Inc. | Method for low temperature bonding and bonded structure |
| CN101179079B (zh) * | 2000-08-14 | 2010-11-03 | 矩阵半导体公司 | 密集阵列和电荷存储器件及其制造方法 |
| US7728402B2 (en) | 2006-08-01 | 2010-06-01 | Cree, Inc. | Semiconductor devices including schottky diodes with controlled breakdown |
| US8835987B2 (en) | 2007-02-27 | 2014-09-16 | Cree, Inc. | Insulated gate bipolar transistors including current suppressing layers |
| DE102008044884A1 (de) * | 2008-08-29 | 2010-03-04 | Albert-Ludwigs-Universität Freiburg | Verfahren zur Bestimmung der Rekombinationseigenschaften an einem Messteilbereich einer Messseite einer Halbleiterstruktur |
| US8193848B2 (en) | 2009-06-02 | 2012-06-05 | Cree, Inc. | Power switching devices having controllable surge current capabilities |
| US8629509B2 (en) * | 2009-06-02 | 2014-01-14 | Cree, Inc. | High voltage insulated gate bipolar transistors with minority carrier diverter |
| US9117739B2 (en) | 2010-03-08 | 2015-08-25 | Cree, Inc. | Semiconductor devices with heterojunction barrier regions and methods of fabricating same |
| US8415671B2 (en) | 2010-04-16 | 2013-04-09 | Cree, Inc. | Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices |
| JPWO2014024611A1 (ja) * | 2012-08-09 | 2016-07-25 | 富士電機株式会社 | 半導体装置の製造方法 |
| CN114498281B (zh) * | 2022-02-14 | 2023-07-28 | 中国科学院半导体研究所 | 采用p型衬底的半导体激光器及其制备方法 |
| WO2024123521A1 (en) * | 2022-12-08 | 2024-06-13 | Ideal Power Inc. | Bidirectional bipolar junction transistor devices from bonded wide and thick wafers |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1046196B (de) * | 1954-11-27 | 1958-12-11 | Siemens Ag | Verfahren zur Herstellung eines Halbleiters fuer Flaechengleichrichter, -transistoren od. dgl. mit mehreren Bereichen verschiedener Leitfaehigkeit |
| JPS61191071A (ja) * | 1985-02-20 | 1986-08-25 | Toshiba Corp | 伝導度変調型半導体装置及びその製造方法 |
| JPS6262558A (ja) * | 1985-09-13 | 1987-03-19 | Toshiba Corp | 電界効果型半導体スイツチング素子の製造方法 |
| JP2633536B2 (ja) * | 1986-11-05 | 1997-07-23 | 株式会社東芝 | 接合型半導体基板の製造方法 |
| JPS63254762A (ja) * | 1987-04-13 | 1988-10-21 | Nissan Motor Co Ltd | Ｃｍｏｓ半導体装置 |
| US5541122A (en) * | 1995-04-03 | 1996-07-30 | Motorola Inc. | Method of fabricating an insulated-gate bipolar transistor |
-
1999
- 1999-03-09 JP JP2000536101A patent/JP2002507058A/ja not_active Withdrawn
- 1999-03-09 EP EP99912328A patent/EP1062692A1/en not_active Withdrawn
- 1999-03-09 KR KR1020007010106A patent/KR20010041822A/ko not_active Application Discontinuation
- 1999-03-09 WO PCT/US1999/005066 patent/WO1999046809A1/en not_active Application Discontinuation
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| JP4884979B2 (ja) * | 2003-12-23 | 2012-02-29 | コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ | オーミックコンタクトを介在させて形成することによって２つのプレートをシールするための方法 |
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| JP2010034281A (ja) * | 2008-07-29 | 2010-02-12 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
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| JP2017059837A (ja) * | 2016-10-25 | 2017-03-23 | 三菱電機株式会社 | 半導体装置の製造方法 |
| JP2018101745A (ja) * | 2016-12-21 | 2018-06-28 | 株式会社Sumco | ｐｎ接合シリコンウェーハの製造方法およびｐｎ接合シリコンウェーハ |
| JP2020061429A (ja) * | 2018-10-09 | 2020-04-16 | 三菱電機株式会社 | 半導体装置 |
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| JP2020155581A (ja) * | 2019-03-20 | 2020-09-24 | 株式会社東芝 | 半導体装置 |
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Also Published As
| Publication number | Publication date |
|---|---|
| WO1999046809A1 (en) | 1999-09-16 |
| EP1062692A1 (en) | 2000-12-27 |
| KR20010041822A (ko) | 2001-05-25 |
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