JP2002502108A - 電磁放射を用いた半導体の表面変更 - Google Patents

電磁放射を用いた半導体の表面変更

Info

Publication number
JP2002502108A
JP2002502108A JP2000524812A JP2000524812A JP2002502108A JP 2002502108 A JP2002502108 A JP 2002502108A JP 2000524812 A JP2000524812 A JP 2000524812A JP 2000524812 A JP2000524812 A JP 2000524812A JP 2002502108 A JP2002502108 A JP 2002502108A
Authority
JP
Japan
Prior art keywords
layer
wafer
chamber
silicate glass
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000524812A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002502108A5 (enExample
Inventor
アシュラフ アール クサーン
ササンガン ラマナサン
ギオヴァニ アントニオ フォッギアト
Original Assignee
クエスター テクノロジー インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by クエスター テクノロジー インコーポレイテッド filed Critical クエスター テクノロジー インコーポレイテッド
Publication of JP2002502108A publication Critical patent/JP2002502108A/ja
Publication of JP2002502108A5 publication Critical patent/JP2002502108A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0236—Pretreatment of the material to be coated by cleaning or etching by etching with a reactive gas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/0231—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to electromagnetic radiation, e.g. UV light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electromagnetism (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Element Separation (AREA)
JP2000524812A 1997-12-08 1998-11-19 電磁放射を用いた半導体の表面変更 Pending JP2002502108A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/986,916 1997-12-08
US08/986,916 US6015759A (en) 1997-12-08 1997-12-08 Surface modification of semiconductors using electromagnetic radiation
PCT/US1998/024998 WO1999030353A1 (en) 1997-12-08 1998-11-19 Surface modification of semiconductors using electromagnetic radiation

Publications (2)

Publication Number Publication Date
JP2002502108A true JP2002502108A (ja) 2002-01-22
JP2002502108A5 JP2002502108A5 (enExample) 2006-01-05

Family

ID=25532874

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000524812A Pending JP2002502108A (ja) 1997-12-08 1998-11-19 電磁放射を用いた半導体の表面変更

Country Status (7)

Country Link
US (1) US6015759A (enExample)
EP (1) EP1038307B1 (enExample)
JP (1) JP2002502108A (enExample)
KR (1) KR100672066B1 (enExample)
AU (1) AU1600399A (enExample)
TW (1) TW445527B (enExample)
WO (1) WO1999030353A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005158796A (ja) * 2003-11-20 2005-06-16 Ushio Inc 処理装置
JP2009543355A (ja) * 2006-07-03 2009-12-03 アプライド マテリアルズ インコーポレイテッド 進歩型フロントエンド処理のためのクラスターツール
WO2017073396A1 (ja) * 2015-10-28 2017-05-04 東京エレクトロン株式会社 基板処理方法、基板処理装置、基板処理システム及び記憶媒体
JP2019509373A (ja) * 2016-02-20 2019-04-04 ウニヴェルズィテート カッセルＵｎｉｖｅｒｓｉｔａｅｔ Ｋａｓｓｅｌ 熱可塑性物質表面上でシリコーンの付着性を改善するための方法

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005158796A (ja) * 2003-11-20 2005-06-16 Ushio Inc 処理装置
JP2009543355A (ja) * 2006-07-03 2009-12-03 アプライド マテリアルズ インコーポレイテッド 進歩型フロントエンド処理のためのクラスターツール
WO2017073396A1 (ja) * 2015-10-28 2017-05-04 東京エレクトロン株式会社 基板処理方法、基板処理装置、基板処理システム及び記憶媒体
JPWO2017073396A1 (ja) * 2015-10-28 2018-08-09 東京エレクトロン株式会社 基板処理方法、基板処理装置、基板処理システム及び記憶媒体
JP2019509373A (ja) * 2016-02-20 2019-04-04 ウニヴェルズィテート カッセルＵｎｉｖｅｒｓｉｔａｅｔ Ｋａｓｓｅｌ 熱可塑性物質表面上でシリコーンの付着性を改善するための方法
JP7075123B2 (ja) 2016-02-20 2022-05-25 ウニヴェルズィテート カッセル 熱可塑性物質表面上でシリコーンの付着性を改善するための方法

Also Published As

Publication number Publication date
AU1600399A (en) 1999-06-28
WO1999030353A1 (en) 1999-06-17
KR100672066B1 (ko) 2007-01-22
EP1038307A1 (en) 2000-09-27
TW445527B (en) 2001-07-11
EP1038307A4 (en) 2005-01-05
US6015759A (en) 2000-01-18
KR20010032904A (ko) 2001-04-25
EP1038307B1 (en) 2013-09-11
WO1999030353A9 (en) 1999-09-16

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