JP2002502108A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2002502108A5 JP2002502108A5 JP2000524812A JP2000524812A JP2002502108A5 JP 2002502108 A5 JP2002502108 A5 JP 2002502108A5 JP 2000524812 A JP2000524812 A JP 2000524812A JP 2000524812 A JP2000524812 A JP 2000524812A JP 2002502108 A5 JP2002502108 A5 JP 2002502108A5
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- layer
- chamber
- semiconductor wafer
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 description 24
- 238000000034 method Methods 0.000 description 21
- 239000000356 contaminant Substances 0.000 description 10
- 230000035945 sensitivity Effects 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 230000005670 electromagnetic radiation Effects 0.000 description 7
- 230000005855 radiation Effects 0.000 description 6
- 239000005368 silicate glass Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- 229910008284 Si—F Inorganic materials 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/986,916 | 1997-12-08 | ||
| US08/986,916 US6015759A (en) | 1997-12-08 | 1997-12-08 | Surface modification of semiconductors using electromagnetic radiation |
| PCT/US1998/024998 WO1999030353A1 (en) | 1997-12-08 | 1998-11-19 | Surface modification of semiconductors using electromagnetic radiation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002502108A JP2002502108A (ja) | 2002-01-22 |
| JP2002502108A5 true JP2002502108A5 (enExample) | 2006-01-05 |
Family
ID=25532874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000524812A Pending JP2002502108A (ja) | 1997-12-08 | 1998-11-19 | 電磁放射を用いた半導体の表面変更 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6015759A (enExample) |
| EP (1) | EP1038307B1 (enExample) |
| JP (1) | JP2002502108A (enExample) |
| KR (1) | KR100672066B1 (enExample) |
| AU (1) | AU1600399A (enExample) |
| TW (1) | TW445527B (enExample) |
| WO (1) | WO1999030353A1 (enExample) |
Families Citing this family (50)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6124211A (en) * | 1994-06-14 | 2000-09-26 | Fsi International, Inc. | Cleaning method |
| US7025831B1 (en) | 1995-12-21 | 2006-04-11 | Fsi International, Inc. | Apparatus for surface conditioning |
| US5954884A (en) | 1997-03-17 | 1999-09-21 | Fsi International Inc. | UV/halogen metals removal process |
| US6465374B1 (en) | 1997-10-21 | 2002-10-15 | Fsi International, Inc. | Method of surface preparation |
| US6165273A (en) | 1997-10-21 | 2000-12-26 | Fsi International Inc. | Equipment for UV wafer heating and photochemistry |
| JPH11279773A (ja) * | 1998-03-27 | 1999-10-12 | Tomoo Ueno | 成膜方法 |
| US6221168B1 (en) | 1998-06-16 | 2001-04-24 | Fsi International, Inc. | HF/IPA based process for removing undesired oxides form a substrate |
| US6759306B1 (en) * | 1998-07-10 | 2004-07-06 | Micron Technology, Inc. | Methods of forming silicon dioxide layers and methods of forming trench isolation regions |
| US6451714B2 (en) * | 1998-08-26 | 2002-09-17 | Micron Technology, Inc. | System and method for selectively increasing surface temperature of an object |
| JP2000294530A (ja) * | 1999-04-06 | 2000-10-20 | Nec Corp | 半導体基板の洗浄方法及びその洗浄装置 |
| US6272768B1 (en) * | 1999-11-12 | 2001-08-14 | Michael J. Danese | Apparatus for treating an object using ultra-violet light |
| US6319809B1 (en) | 2000-07-12 | 2001-11-20 | Taiwan Semiconductor Manfacturing Company | Method to reduce via poison in low-k Cu dual damascene by UV-treatment |
| DE10143997B4 (de) * | 2001-09-07 | 2006-12-14 | Infineon Technologies Ag | Verfahren zur Herstellung einer integrierten Halbleiterschaltung mit einem Isolationsgraben |
| DE10145648B4 (de) * | 2001-09-15 | 2006-08-24 | Arccure Technologies Gmbh | Bestrahlungsvorrichtung mit veränderlichem Spektrum |
| FR2840189B1 (fr) * | 2002-05-30 | 2005-03-11 | Jean Pierre Gemon | Ecarteur hydraulique |
| AU2003272613A1 (en) * | 2002-09-20 | 2004-04-08 | Pete Atwell | System and method for removal of materials from an article |
| JP2004128195A (ja) * | 2002-10-02 | 2004-04-22 | Oki Electric Ind Co Ltd | 保護膜の製造方法 |
| US6730458B1 (en) | 2003-03-03 | 2004-05-04 | Samsung Electronics Co., Ltd. | Method for forming fine patterns through effective glass transition temperature reduction |
| JP4407252B2 (ja) * | 2003-11-20 | 2010-02-03 | ウシオ電機株式会社 | 処理装置 |
| JP3972126B2 (ja) * | 2004-05-28 | 2007-09-05 | 独立行政法人産業技術総合研究所 | 紫外線発生源、紫外線照射処理装置及び半導体製造装置 |
| JP4971665B2 (ja) * | 2006-03-31 | 2012-07-11 | 公立大学法人名古屋市立大学 | 皮膚疾患治療用光線治療器 |
| US7342235B1 (en) | 2006-04-27 | 2008-03-11 | Metrosol, Inc. | Contamination monitoring and control techniques for use with an optical metrology instrument |
| US7622310B2 (en) * | 2006-04-27 | 2009-11-24 | Metrosol, Inc. | Contamination monitoring and control techniques for use with an optical metrology instrument |
| US7663747B2 (en) * | 2006-04-27 | 2010-02-16 | Metrosol, Inc. | Contamination monitoring and control techniques for use with an optical metrology instrument |
| EP2041774A2 (en) * | 2006-07-03 | 2009-04-01 | Applied Materials, Inc. | Cluster tool for advanced front-end processing |
| JP5052071B2 (ja) * | 2006-08-25 | 2012-10-17 | 株式会社明電舎 | 酸化膜形成方法とその装置 |
| US20080179286A1 (en) | 2007-01-29 | 2008-07-31 | Igor Murokh | Dielectric plasma chamber apparatus and method with exterior electrodes |
| US20080302400A1 (en) * | 2007-06-05 | 2008-12-11 | Thomas Johnston | System and Method for Removal of Materials from an Article |
| US7858532B2 (en) | 2007-08-06 | 2010-12-28 | United Microelectronics Corp. | Dielectric layer structure and manufacturing method thereof |
| RU2010130570A (ru) * | 2007-12-21 | 2012-01-27 | Солвей Флуор Гмбх (De) | Способ получения микроэлектромеханических систем |
| US8022377B2 (en) * | 2008-04-22 | 2011-09-20 | Applied Materials, Inc. | Method and apparatus for excimer curing |
| US20110056513A1 (en) * | 2008-06-05 | 2011-03-10 | Axel Hombach | Method for treating surfaces, lamp for said method, and irradiation system having said lamp |
| JPWO2010050189A1 (ja) * | 2008-10-29 | 2012-03-29 | 株式会社アルバック | 太陽電池の製造方法、エッチング装置及びｃｖｄ装置 |
| CN102005372A (zh) * | 2009-08-31 | 2011-04-06 | 中芯国际集成电路制造(上海)有限公司 | 制作半导体器件的方法 |
| CN102024681B (zh) * | 2009-09-11 | 2012-03-07 | 中芯国际集成电路制造(上海)有限公司 | 用于制造半导体器件的方法 |
| US8603292B2 (en) * | 2009-10-28 | 2013-12-10 | Lam Research Corporation | Quartz window for a degas chamber |
| US8584612B2 (en) * | 2009-12-17 | 2013-11-19 | Lam Research Corporation | UV lamp assembly of degas chamber having rotary shutters |
| US8492736B2 (en) | 2010-06-09 | 2013-07-23 | Lam Research Corporation | Ozone plenum as UV shutter or tunable UV filter for cleaning semiconductor substrates |
| DE102011016935A1 (de) * | 2011-04-13 | 2012-10-18 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Licht emittierenden Halbleiterbauelements und Licht emittierendes Halbleiterbauelement |
| US8399359B2 (en) | 2011-06-01 | 2013-03-19 | United Microelectronics Corp. | Manufacturing method for dual damascene structure |
| US8735295B2 (en) | 2012-06-19 | 2014-05-27 | United Microelectronics Corp. | Method of manufacturing dual damascene structure |
| US8647991B1 (en) | 2012-07-30 | 2014-02-11 | United Microelectronics Corp. | Method for forming dual damascene opening |
| DE102012213787A1 (de) * | 2012-08-03 | 2014-02-06 | Robert Bosch Gmbh | Oberflächenstrukturierung für zellbiologische und/oder medizinische Anwendungen |
| US8921226B2 (en) | 2013-01-14 | 2014-12-30 | United Microelectronics Corp. | Method of forming semiconductor structure having contact plug |
| US8962490B1 (en) | 2013-10-08 | 2015-02-24 | United Microelectronics Corp. | Method for fabricating semiconductor device |
| US20160330846A1 (en) * | 2014-01-20 | 2016-11-10 | Ushio Denki Kabushiki Kaisha | Desmear treatment device |
| US20180323060A1 (en) * | 2015-10-28 | 2018-11-08 | Tokyo Electron Limited | Substrate processing method, substrate processing apparatus, substrate processing system and recording medium |
| DE102016002011A1 (de) * | 2016-02-20 | 2017-08-24 | Universität Kassel | Verfahren zur Haftverbesserung von Silikon auf einer thermoplastischen Oberfläche |
| CN112578244A (zh) * | 2020-12-08 | 2021-03-30 | 广西电网有限责任公司电力科学研究院 | 一种利用紫外光评估gis设备内部缺陷放电的方法 |
| KR102835848B1 (ko) * | 2021-07-20 | 2025-07-18 | 삼성디스플레이 주식회사 | 포토리소그래피 장치 및 포토레지스트 패턴 형성 방법 |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2925667A1 (de) * | 1979-05-22 | 1980-12-04 | Bbc Brown Boveri & Cie | Vorrichtung zur erzeugung von ozon |
| CH649518A5 (de) * | 1979-08-02 | 1985-05-31 | Bbc Brown Boveri & Cie | Verfahren und schaltungsanordnung zur durchfuehrung von gasentladungsreaktionen. |
| CH642606A5 (de) * | 1980-01-14 | 1984-04-30 | Bbc Brown Boveri & Cie | Ozonisator. |
| DE3162134D1 (en) * | 1980-12-23 | 1984-03-08 | Bbc Brown Boveri & Cie | Apparatus for the production of ozone by electric discharge |
| EP0171605B1 (en) | 1984-07-11 | 1990-02-14 | Hitachi, Ltd. | Method of forming an insulating film on a semiconductor body |
| CH670171A5 (enExample) * | 1986-07-22 | 1989-05-12 | Bbc Brown Boveri & Cie | |
| US5173638A (en) * | 1986-07-22 | 1992-12-22 | Bbc Brown, Boveri Ag | High-power radiator |
| CH675178A5 (enExample) * | 1987-10-23 | 1990-08-31 | Bbc Brown Boveri & Cie | |
| JPH01134932A (ja) * | 1987-11-19 | 1989-05-26 | Oki Electric Ind Co Ltd | 基板清浄化方法及び基板清浄化装置 |
| CH675504A5 (enExample) * | 1988-01-15 | 1990-09-28 | Asea Brown Boveri | |
| US5225355A (en) | 1988-02-26 | 1993-07-06 | Fujitsu Limited | Gettering treatment process |
| JPH0228322A (ja) * | 1988-04-28 | 1990-01-30 | Mitsubishi Electric Corp | 半導体基板の前処理方法 |
| CH676168A5 (enExample) * | 1988-10-10 | 1990-12-14 | Asea Brown Boveri | |
| CH677292A5 (enExample) * | 1989-02-27 | 1991-04-30 | Asea Brown Boveri | |
| US5118989A (en) * | 1989-12-11 | 1992-06-02 | Fusion Systems Corporation | Surface discharge radiation source |
| JPH0680657B2 (ja) * | 1989-12-27 | 1994-10-12 | 株式会社半導体プロセス研究所 | 半導体装置の製造方法 |
| EP0445535B1 (en) | 1990-02-06 | 1995-02-01 | Sel Semiconductor Energy Laboratory Co., Ltd. | Method of forming an oxide film |
| CH680099A5 (enExample) * | 1990-05-22 | 1992-06-15 | Asea Brown Boveri | |
| EP0463815B1 (en) * | 1990-06-22 | 1995-09-27 | Kabushiki Kaisha Toshiba | Vacuum ultraviolet light source |
| JPH0719777B2 (ja) * | 1990-08-10 | 1995-03-06 | 株式会社半導体プロセス研究所 | 半導体装置の製造方法 |
| EP0489184B1 (de) * | 1990-12-03 | 1996-02-28 | Heraeus Noblelight GmbH | Hochleistungsstrahler |
| DE4140497C2 (de) * | 1991-12-09 | 1996-05-02 | Heraeus Noblelight Gmbh | Hochleistungsstrahler |
| EP0572704B1 (en) * | 1992-06-05 | 2000-04-19 | Semiconductor Process Laboratory Co., Ltd. | Method for manufacturing a semiconductor device including method of reforming an insulating film formed by low temperature CVD |
| US5387546A (en) * | 1992-06-22 | 1995-02-07 | Canon Sales Co., Inc. | Method for manufacturing a semiconductor device |
| DE4222130C2 (de) * | 1992-07-06 | 1995-12-14 | Heraeus Noblelight Gmbh | Hochleistungsstrahler |
| TW260806B (enExample) * | 1993-11-26 | 1995-10-21 | Ushio Electric Inc | |
| US5489553A (en) * | 1995-05-25 | 1996-02-06 | Industrial Technology Research Institute | HF vapor surface treatment for the 03 teos gap filling deposition |
| US5536681A (en) * | 1995-06-23 | 1996-07-16 | Taiwan Semiconductor Manufacturing Company | PE-OX/ozone-TEOS gap filling capability by selective N2 treatment on PE-OX |
-
1997
- 1997-12-08 US US08/986,916 patent/US6015759A/en not_active Expired - Lifetime
-
1998
- 1998-11-19 EP EP98960398.0A patent/EP1038307B1/en not_active Expired - Lifetime
- 1998-11-19 KR KR1020007006238A patent/KR100672066B1/ko not_active Expired - Lifetime
- 1998-11-19 AU AU16003/99A patent/AU1600399A/en not_active Abandoned
- 1998-11-19 JP JP2000524812A patent/JP2002502108A/ja active Pending
- 1998-11-19 WO PCT/US1998/024998 patent/WO1999030353A1/en not_active Ceased
- 1998-12-08 TW TW087120336A patent/TW445527B/zh not_active IP Right Cessation
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2002502108A5 (enExample) | ||
| KR100672066B1 (ko) | 전자기 방사를 이용하는 반도체들의 표면 변경 | |
| JP6422536B2 (ja) | 気相化学曝露による低誘電率誘電体の損傷修復 | |
| US6150265A (en) | Apparatus for forming materials | |
| US8657961B2 (en) | Method for UV based silylation chamber clean | |
| US20110233430A1 (en) | Ultraviolet treatment apparatus | |
| US10373823B2 (en) | Deployment of light energy within specific spectral bands in specific sequences for deposition, treatment and removal of materials | |
| TWI581331B (zh) | 降低多孔低ｋ膜的介電常數之方法 | |
| KR102085547B1 (ko) | 손상된 저 ｋ 필름들의 기공 밀봉을 위한 uv-보조된 광화학 증기 증착법 | |
| CN101208770A (zh) | 用于处理介电材料的设备和方法 | |
| KR20110025227A (ko) | 기판 성능에 대한 높은 처리량 및 안정한 기판을 위한 급속 주기적 및 포괄적 후 다중 기판 ｕｖ-오존 세정 시퀀스들의 중첩 | |
| JP2010040567A (ja) | 酸化膜表面の洗浄及び保護方法および酸化膜表面の洗浄及び保護装置 | |
| JP2579346Y2 (ja) | レジスト膜のアッシング装置 | |
| JPH04307734A (ja) | アッシング装置 | |
| CN1155990C (zh) | Uv基片加热和光化学的设备 | |
| JPH05198498A (ja) | レジスト膜のアッシング装置 | |
| JPH0611343U (ja) | レジスト膜のアッシング装置 | |
| JP2002261074A (ja) | 半導体基板の処理方法および処理装置 | |
| JP2001217222A (ja) | 半導体装置の製造方法および半導体製造装置 | |
| JPH0629260A (ja) | レジスト膜のアッシング装置 | |
| JP2007087997A (ja) | 半導体微結晶粒子の形成方法 |