JP2002353568A5 - - Google Patents
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- JP2002353568A5 JP2002353568A5 JP2001158785A JP2001158785A JP2002353568A5 JP 2002353568 A5 JP2002353568 A5 JP 2002353568A5 JP 2001158785 A JP2001158785 A JP 2001158785A JP 2001158785 A JP2001158785 A JP 2001158785A JP 2002353568 A5 JP2002353568 A5 JP 2002353568A5
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- Prior art keywords
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- semiconductor laser
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 125000006850 spacer group Chemical group 0.000 claims 20
- 239000004065 semiconductor Substances 0.000 claims 14
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 7
- 239000013078 crystal Substances 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 7
- 230000003287 optical effect Effects 0.000 claims 5
- 238000004519 manufacturing process Methods 0.000 claims 2
- SDTHIDMOBRXVOQ-UHFFFAOYSA-N 5-[bis(2-chloroethyl)amino]-6-methyl-1h-pyrimidine-2,4-dione Chemical compound CC=1NC(=O)NC(=O)C=1N(CCCl)CCCl SDTHIDMOBRXVOQ-UHFFFAOYSA-N 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000002019 doping agent Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001158785A JP4265875B2 (ja) | 2001-05-28 | 2001-05-28 | 面発光半導体レーザの製造方法 |
| US10/154,822 US6782032B2 (en) | 2001-05-28 | 2002-05-28 | Semiconductor laser, ray module using the same and ray communication system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001158785A JP4265875B2 (ja) | 2001-05-28 | 2001-05-28 | 面発光半導体レーザの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002353568A JP2002353568A (ja) | 2002-12-06 |
| JP2002353568A5 true JP2002353568A5 (enExample) | 2005-09-08 |
| JP4265875B2 JP4265875B2 (ja) | 2009-05-20 |
Family
ID=19002456
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001158785A Expired - Fee Related JP4265875B2 (ja) | 2001-05-28 | 2001-05-28 | 面発光半導体レーザの製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6782032B2 (enExample) |
| JP (1) | JP4265875B2 (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003152284A (ja) * | 2001-11-14 | 2003-05-23 | Fuji Xerox Co Ltd | 発光デバイスおよび光伝送装置 |
| JP2004233551A (ja) * | 2003-01-29 | 2004-08-19 | Sony Corp | 光通信モジュールおよびコネクタ |
| US7095058B2 (en) * | 2003-03-21 | 2006-08-22 | Intel Corporation | System and method for an improved light-emitting device |
| US6973105B2 (en) * | 2003-03-21 | 2005-12-06 | Agilent Technologies, Inc. | Method and apparatus to enable adaptive equalization at high bandwidths when using single-mode VCSELs over multimode fibers |
| JPWO2005031829A1 (ja) * | 2003-09-24 | 2006-12-07 | 日本電気株式会社 | 半導体素子および半導体集積素子 |
| JP4870349B2 (ja) * | 2004-01-09 | 2012-02-08 | シャープ株式会社 | 半導体レーザ装置の製造方法 |
| JP4950432B2 (ja) * | 2004-06-11 | 2012-06-13 | 株式会社リコー | 面発光型半導体レーザ、面発光型半導体レーザアレイ、画像形成装置、光ピックアップ、光送信モジュール、光送受信モジュール及び光通信システム |
| US7684458B2 (en) | 2004-06-11 | 2010-03-23 | Ricoh Company, Ltd. | Surface-emission laser diode and fabrication process thereof |
| WO2007008646A2 (en) | 2005-07-12 | 2007-01-18 | Massachusetts Institute Of Technology | Wireless non-radiative energy transfer |
| US7693204B2 (en) | 2006-02-03 | 2010-04-06 | Ricoh Company, Ltd. | Surface-emitting laser device and surface-emitting laser array including same |
| US20070181905A1 (en) * | 2006-02-07 | 2007-08-09 | Hui-Heng Wang | Light emitting diode having enhanced side emitting capability |
| JP5212113B2 (ja) * | 2006-12-27 | 2013-06-19 | 日本電気株式会社 | 面発光レーザ |
| US7881358B2 (en) | 2006-12-27 | 2011-02-01 | Nec Corporation | Surface emitting laser |
| JP2008283028A (ja) * | 2007-05-11 | 2008-11-20 | Fuji Xerox Co Ltd | 面発光型半導体レーザ、面発光型半導体レーザの製造方法、モジュール、光源装置、情報処理装置、光送信装置、光空間伝送装置および光空間伝送システム。 |
| JP2009021459A (ja) * | 2007-07-13 | 2009-01-29 | Fuji Xerox Co Ltd | 面発光型半導体レーザの駆動方法および光伝送モジュール |
| US20110122908A1 (en) * | 2009-11-24 | 2011-05-26 | Murata Manufacturing Co., Ltd. | Surface emitting device |
| DE102010002204A1 (de) * | 2010-02-22 | 2011-08-25 | OSRAM Opto Semiconductors GmbH, 93055 | Halbleiterdiode und Verfahren zum Herstellen einer Halbleiterdiode |
| JP2013243329A (ja) * | 2011-07-07 | 2013-12-05 | Ricoh Co Ltd | 面発光レーザ素子及び原子発振器 |
| JP2013030505A (ja) * | 2011-07-26 | 2013-02-07 | Sumitomo Electric Ind Ltd | Ｉｉｉ族窒化物半導体レーザ素子 |
| HK1200602A1 (en) | 2011-11-04 | 2015-08-07 | WiTricity公司 | Wireless energy transfer modeling tool |
| US9705283B1 (en) * | 2014-05-20 | 2017-07-11 | University Of Central Florida Research Foundation, Inc. | Diffused channel semiconductor light sources |
| JP6700027B2 (ja) * | 2015-11-20 | 2020-05-27 | スタンレー電気株式会社 | 垂直共振器型発光素子 |
| US10033156B2 (en) | 2016-07-13 | 2018-07-24 | University Of Central Florida Research Foundation, Inc. | Low resistance vertical cavity light source with PNPN blocking |
| WO2018013713A2 (en) | 2016-07-13 | 2018-01-18 | University Of Centeral Florida Research Foundation, Inc. | Semiconductor devices with depleted heterojunction current blocking regions |
| JP2018186213A (ja) * | 2017-04-27 | 2018-11-22 | スタンレー電気株式会社 | 垂直共振器型発光素子 |
| KR102515674B1 (ko) * | 2018-04-04 | 2023-03-30 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 표면 광방출 레이저 소자 및 이를 포함하는 발광장치 |
| WO2019194600A1 (ko) | 2018-04-04 | 2019-10-10 | 엘지이노텍 주식회사 | 표면 광방출 레이저 소자 |
| KR102504307B1 (ko) * | 2018-06-29 | 2023-02-28 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 표면방출발광 레이저소자, 이를 포함하는 발광장치 및 이의 제조방법 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5168077A (en) * | 1989-03-31 | 1992-12-01 | Kabushiki Kaisha Toshiba | Method of manufacturing a p-type compound semiconductor thin film containing a iii-group element and a v-group element by metal organics chemical vapor deposition |
| US5034958A (en) * | 1990-04-19 | 1991-07-23 | Bell Communications Research, Inc. | Front-surface emitting diode laser |
| GB2320609A (en) * | 1996-12-21 | 1998-06-24 | Sharp Kk | Semiconductor laser device |
| JP4134366B2 (ja) | 1998-01-08 | 2008-08-20 | 株式会社日立製作所 | 面発光レーザ |
| GB2351390A (en) * | 1999-06-16 | 2000-12-27 | Sharp Kk | A semiconductor material comprising two dopants |
-
2001
- 2001-05-28 JP JP2001158785A patent/JP4265875B2/ja not_active Expired - Fee Related
-
2002
- 2002-05-28 US US10/154,822 patent/US6782032B2/en not_active Expired - Lifetime
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