JP4265875B2 - 面発光半導体レーザの製造方法 - Google Patents

面発光半導体レーザの製造方法 Download PDF

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JP4265875B2
JP4265875B2 JP2001158785A JP2001158785A JP4265875B2 JP 4265875 B2 JP4265875 B2 JP 4265875B2 JP 2001158785 A JP2001158785 A JP 2001158785A JP 2001158785 A JP2001158785 A JP 2001158785A JP 4265875 B2 JP4265875 B2 JP 4265875B2
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layer
light
surface emitting
laser
gaas
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JP2002353568A (ja
JP2002353568A5 (enExample
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正彦 近藤
健 北谷
真 工藤
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日本オプネクスト株式会社
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06226—Modulation at ultra-high frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32358—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the bandgap strongly in a non-linear way by the bowing effect
    • H01S5/32366—(In)GaAs with small amount of N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
JP2001158785A 2001-05-28 2001-05-28 面発光半導体レーザの製造方法 Expired - Fee Related JP4265875B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001158785A JP4265875B2 (ja) 2001-05-28 2001-05-28 面発光半導体レーザの製造方法
US10/154,822 US6782032B2 (en) 2001-05-28 2002-05-28 Semiconductor laser, ray module using the same and ray communication system

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Application Number Priority Date Filing Date Title
JP2001158785A JP4265875B2 (ja) 2001-05-28 2001-05-28 面発光半導体レーザの製造方法

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JP2002353568A JP2002353568A (ja) 2002-12-06
JP2002353568A5 JP2002353568A5 (enExample) 2005-09-08
JP4265875B2 true JP4265875B2 (ja) 2009-05-20

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8760008B2 (en) 2005-07-12 2014-06-24 Massachusetts Institute Of Technology Wireless energy transfer over variable distances between resonators of substantially similar resonant frequencies
US8875086B2 (en) 2011-11-04 2014-10-28 Witricity Corporation Wireless energy transfer modeling tool

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JP2003152284A (ja) * 2001-11-14 2003-05-23 Fuji Xerox Co Ltd 発光デバイスおよび光伝送装置
JP2004233551A (ja) * 2003-01-29 2004-08-19 Sony Corp 光通信モジュールおよびコネクタ
US7095058B2 (en) * 2003-03-21 2006-08-22 Intel Corporation System and method for an improved light-emitting device
US6973105B2 (en) * 2003-03-21 2005-12-06 Agilent Technologies, Inc. Method and apparatus to enable adaptive equalization at high bandwidths when using single-mode VCSELs over multimode fibers
JPWO2005031829A1 (ja) * 2003-09-24 2006-12-07 日本電気株式会社 半導体素子および半導体集積素子
JP4870349B2 (ja) * 2004-01-09 2012-02-08 シャープ株式会社 半導体レーザ装置の製造方法
JP4950432B2 (ja) * 2004-06-11 2012-06-13 株式会社リコー 面発光型半導体レーザ、面発光型半導体レーザアレイ、画像形成装置、光ピックアップ、光送信モジュール、光送受信モジュール及び光通信システム
EP1780849B1 (en) 2004-06-11 2013-01-30 Ricoh Company, Ltd. Surface emitting laser diode and its manufacturing method
US7693204B2 (en) 2006-02-03 2010-04-06 Ricoh Company, Ltd. Surface-emitting laser device and surface-emitting laser array including same
US20070181905A1 (en) * 2006-02-07 2007-08-09 Hui-Heng Wang Light emitting diode having enhanced side emitting capability
US7881358B2 (en) 2006-12-27 2011-02-01 Nec Corporation Surface emitting laser
JP5212113B2 (ja) * 2006-12-27 2013-06-19 日本電気株式会社 面発光レーザ
JP2008283028A (ja) * 2007-05-11 2008-11-20 Fuji Xerox Co Ltd 面発光型半導体レーザ、面発光型半導体レーザの製造方法、モジュール、光源装置、情報処理装置、光送信装置、光空間伝送装置および光空間伝送システム。
JP2009021459A (ja) 2007-07-13 2009-01-29 Fuji Xerox Co Ltd 面発光型半導体レーザの駆動方法および光伝送モジュール
US20110122908A1 (en) * 2009-11-24 2011-05-26 Murata Manufacturing Co., Ltd. Surface emitting device
DE102010002204A1 (de) * 2010-02-22 2011-08-25 OSRAM Opto Semiconductors GmbH, 93055 Halbleiterdiode und Verfahren zum Herstellen einer Halbleiterdiode
JP2013243329A (ja) * 2011-07-07 2013-12-05 Ricoh Co Ltd 面発光レーザ素子及び原子発振器
JP2013030505A (ja) * 2011-07-26 2013-02-07 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体レーザ素子
US9705283B1 (en) * 2014-05-20 2017-07-11 University Of Central Florida Research Foundation, Inc. Diffused channel semiconductor light sources
JP6700027B2 (ja) * 2015-11-20 2020-05-27 スタンレー電気株式会社 垂直共振器型発光素子
WO2018013713A2 (en) 2016-07-13 2018-01-18 University Of Centeral Florida Research Foundation, Inc. Semiconductor devices with depleted heterojunction current blocking regions
US10033156B2 (en) 2016-07-13 2018-07-24 University Of Central Florida Research Foundation, Inc. Low resistance vertical cavity light source with PNPN blocking
JP2018186213A (ja) * 2017-04-27 2018-11-22 スタンレー電気株式会社 垂直共振器型発光素子
WO2019194600A1 (ko) 2018-04-04 2019-10-10 엘지이노텍 주식회사 표면 광방출 레이저 소자
KR102515674B1 (ko) * 2018-04-04 2023-03-30 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 표면 광방출 레이저 소자 및 이를 포함하는 발광장치
KR102504307B1 (ko) 2018-06-29 2023-02-28 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 표면방출발광 레이저소자, 이를 포함하는 발광장치 및 이의 제조방법

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8760008B2 (en) 2005-07-12 2014-06-24 Massachusetts Institute Of Technology Wireless energy transfer over variable distances between resonators of substantially similar resonant frequencies
US8760007B2 (en) 2005-07-12 2014-06-24 Massachusetts Institute Of Technology Wireless energy transfer with high-Q to more than one device
US8766485B2 (en) 2005-07-12 2014-07-01 Massachusetts Institute Of Technology Wireless energy transfer over distances to a moving device
US8772971B2 (en) 2005-07-12 2014-07-08 Massachusetts Institute Of Technology Wireless energy transfer across variable distances with high-Q capacitively-loaded conducting-wire loops
US8772972B2 (en) 2005-07-12 2014-07-08 Massachusetts Institute Of Technology Wireless energy transfer across a distance to a moving device
US8791599B2 (en) 2005-07-12 2014-07-29 Massachusetts Institute Of Technology Wireless energy transfer to a moving device between high-Q resonators
US8875086B2 (en) 2011-11-04 2014-10-28 Witricity Corporation Wireless energy transfer modeling tool

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