JP2002252280A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法

Info

Publication number
JP2002252280A
JP2002252280A JP2001051172A JP2001051172A JP2002252280A JP 2002252280 A JP2002252280 A JP 2002252280A JP 2001051172 A JP2001051172 A JP 2001051172A JP 2001051172 A JP2001051172 A JP 2001051172A JP 2002252280 A JP2002252280 A JP 2002252280A
Authority
JP
Japan
Prior art keywords
fluorine
oxide film
silicon oxide
film
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001051172A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002252280A5 (enExample
Inventor
Akimasa Fujiki
謙昌 藤木
Takeru Matsuoka
長 松岡
Hiromoto Takewaka
博基 竹若
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2001051172A priority Critical patent/JP2002252280A/ja
Priority to US09/909,781 priority patent/US6586838B2/en
Priority to TW090122983A priority patent/TW516178B/zh
Priority to KR10-2001-0058832A priority patent/KR100403527B1/ko
Publication of JP2002252280A publication Critical patent/JP2002252280A/ja
Publication of JP2002252280A5 publication Critical patent/JP2002252280A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H10W20/01—
    • H10W20/47—
    • H10W20/48—

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP2001051172A 2001-02-26 2001-02-26 半導体装置およびその製造方法 Pending JP2002252280A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001051172A JP2002252280A (ja) 2001-02-26 2001-02-26 半導体装置およびその製造方法
US09/909,781 US6586838B2 (en) 2001-02-26 2001-07-23 Semiconductor device
TW090122983A TW516178B (en) 2001-02-26 2001-09-19 Semiconductor device and manufacturing method thereof
KR10-2001-0058832A KR100403527B1 (ko) 2001-02-26 2001-09-22 반도체 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001051172A JP2002252280A (ja) 2001-02-26 2001-02-26 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2002252280A true JP2002252280A (ja) 2002-09-06
JP2002252280A5 JP2002252280A5 (enExample) 2008-03-21

Family

ID=18912012

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001051172A Pending JP2002252280A (ja) 2001-02-26 2001-02-26 半導体装置およびその製造方法

Country Status (4)

Country Link
US (1) US6586838B2 (enExample)
JP (1) JP2002252280A (enExample)
KR (1) KR100403527B1 (enExample)
TW (1) TW516178B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007273873A (ja) * 2006-03-31 2007-10-18 Tokyo Electron Ltd 半導体装置及び半導体装置の製造方法
US20100224922A1 (en) * 2009-03-05 2010-09-09 Elpida Memory, Inc. Semiconductor device and method of manufacturing the same

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060038293A1 (en) * 2004-08-23 2006-02-23 Rueger Neal R Inter-metal dielectric fill
KR20150007000A (ko) 2013-07-10 2015-01-20 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 박막 트랜지스터 기판의 제조 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07201985A (ja) * 1993-12-28 1995-08-04 Toshiba Corp 半導体装置の製造方法
JPH08111395A (ja) * 1994-10-12 1996-04-30 Sony Corp 平坦化絶縁膜の形成方法
JPH11284067A (ja) * 1998-03-27 1999-10-15 Toshiba Corp 半導体装置およびその製造方法
JP2000174119A (ja) * 1998-12-02 2000-06-23 Fujitsu Ltd 半導体装置およびその製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4419809A (en) * 1981-12-30 1983-12-13 International Business Machines Corporation Fabrication process of sub-micrometer channel length MOSFETs
JP2859288B2 (ja) * 1989-03-20 1999-02-17 株式会社日立製作所 半導体集積回路装置及びその製造方法
JPH0744218B2 (ja) * 1989-10-03 1995-05-15 三菱電機株式会社 半導体装置およびその製造方法
JP3231096B2 (ja) * 1991-10-15 2001-11-19 キヤノン株式会社 液体噴射記録ヘッド用基体、その製造方法および液体噴射記録ヘッドならびに液体噴射記録装置
JP2773530B2 (ja) * 1992-04-15 1998-07-09 日本電気株式会社 半導体装置の製造方法
US5753564A (en) * 1992-11-24 1998-05-19 Sumitomo Metal Industries, Ltd. Method for forming a thin film of a silicon oxide on a silicon substrate, by BCR plasma
JP3279737B2 (ja) 1993-07-09 2002-04-30 沖電気工業株式会社 半導体素子の製造方法
JP2917897B2 (ja) * 1996-03-29 1999-07-12 日本電気株式会社 半導体装置の製造方法
JP3323055B2 (ja) * 1996-04-03 2002-09-09 株式会社東芝 半導体装置およびその製造方法
JPH1098102A (ja) 1996-09-25 1998-04-14 Sony Corp 半導体装置及び半導体装置の製造方法
JPH10270554A (ja) 1997-03-24 1998-10-09 Mitsubishi Electric Corp 半導体装置及びその製造方法
JPH10335461A (ja) 1997-04-02 1998-12-18 Nec Corp 半導体装置及び半導体装置の製造方法
JP3660799B2 (ja) * 1997-09-08 2005-06-15 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP3215382B2 (ja) 1998-02-17 2001-10-02 松下電器産業株式会社 半導体装置及びその製造方法
US6313003B1 (en) * 2000-08-17 2001-11-06 Taiwan Semiconductor Manufacturing Company Fabrication process for metal-insulator-metal capacitor with low gate resistance

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07201985A (ja) * 1993-12-28 1995-08-04 Toshiba Corp 半導体装置の製造方法
JPH08111395A (ja) * 1994-10-12 1996-04-30 Sony Corp 平坦化絶縁膜の形成方法
JPH11284067A (ja) * 1998-03-27 1999-10-15 Toshiba Corp 半導体装置およびその製造方法
JP2000174119A (ja) * 1998-12-02 2000-06-23 Fujitsu Ltd 半導体装置およびその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007273873A (ja) * 2006-03-31 2007-10-18 Tokyo Electron Ltd 半導体装置及び半導体装置の製造方法
US20100224922A1 (en) * 2009-03-05 2010-09-09 Elpida Memory, Inc. Semiconductor device and method of manufacturing the same
JP2010206094A (ja) * 2009-03-05 2010-09-16 Elpida Memory Inc 半導体装置及びその製造方法

Also Published As

Publication number Publication date
US20020117755A1 (en) 2002-08-29
KR20020070074A (ko) 2002-09-05
TW516178B (en) 2003-01-01
US6586838B2 (en) 2003-07-01
KR100403527B1 (ko) 2003-10-30

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