TW516178B - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof Download PDF

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Publication number
TW516178B
TW516178B TW090122983A TW90122983A TW516178B TW 516178 B TW516178 B TW 516178B TW 090122983 A TW090122983 A TW 090122983A TW 90122983 A TW90122983 A TW 90122983A TW 516178 B TW516178 B TW 516178B
Authority
TW
Taiwan
Prior art keywords
film
fluorine
silicon oxide
mentioned
metal wiring
Prior art date
Application number
TW090122983A
Other languages
English (en)
Chinese (zh)
Inventor
Noriaki Fujiki
Takeru Matsuoka
Hiroki Takewaka
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW516178B publication Critical patent/TW516178B/zh

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Classifications

    • H10W20/01—
    • H10W20/47—
    • H10W20/48—

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
TW090122983A 2001-02-26 2001-09-19 Semiconductor device and manufacturing method thereof TW516178B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001051172A JP2002252280A (ja) 2001-02-26 2001-02-26 半導体装置およびその製造方法

Publications (1)

Publication Number Publication Date
TW516178B true TW516178B (en) 2003-01-01

Family

ID=18912012

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090122983A TW516178B (en) 2001-02-26 2001-09-19 Semiconductor device and manufacturing method thereof

Country Status (4)

Country Link
US (1) US6586838B2 (enExample)
JP (1) JP2002252280A (enExample)
KR (1) KR100403527B1 (enExample)
TW (1) TW516178B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060038293A1 (en) * 2004-08-23 2006-02-23 Rueger Neal R Inter-metal dielectric fill
JP5119606B2 (ja) * 2006-03-31 2013-01-16 東京エレクトロン株式会社 半導体装置及び半導体装置の製造方法
JP2010206094A (ja) * 2009-03-05 2010-09-16 Elpida Memory Inc 半導体装置及びその製造方法
KR20150007000A (ko) 2013-07-10 2015-01-20 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 박막 트랜지스터 기판의 제조 방법

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4419809A (en) * 1981-12-30 1983-12-13 International Business Machines Corporation Fabrication process of sub-micrometer channel length MOSFETs
JP2859288B2 (ja) * 1989-03-20 1999-02-17 株式会社日立製作所 半導体集積回路装置及びその製造方法
JPH0744218B2 (ja) * 1989-10-03 1995-05-15 三菱電機株式会社 半導体装置およびその製造方法
JP3231096B2 (ja) * 1991-10-15 2001-11-19 キヤノン株式会社 液体噴射記録ヘッド用基体、その製造方法および液体噴射記録ヘッドならびに液体噴射記録装置
JP2773530B2 (ja) * 1992-04-15 1998-07-09 日本電気株式会社 半導体装置の製造方法
US5753564A (en) * 1992-11-24 1998-05-19 Sumitomo Metal Industries, Ltd. Method for forming a thin film of a silicon oxide on a silicon substrate, by BCR plasma
JP3279737B2 (ja) 1993-07-09 2002-04-30 沖電気工業株式会社 半導体素子の製造方法
JP3199942B2 (ja) * 1993-12-28 2001-08-20 株式会社東芝 半導体装置の製造方法
JP3297787B2 (ja) * 1994-10-12 2002-07-02 ソニー株式会社 平坦化絶縁膜の形成方法
JP2917897B2 (ja) * 1996-03-29 1999-07-12 日本電気株式会社 半導体装置の製造方法
JP3323055B2 (ja) * 1996-04-03 2002-09-09 株式会社東芝 半導体装置およびその製造方法
JPH1098102A (ja) 1996-09-25 1998-04-14 Sony Corp 半導体装置及び半導体装置の製造方法
JPH10270554A (ja) 1997-03-24 1998-10-09 Mitsubishi Electric Corp 半導体装置及びその製造方法
JPH10335461A (ja) 1997-04-02 1998-12-18 Nec Corp 半導体装置及び半導体装置の製造方法
JP3660799B2 (ja) * 1997-09-08 2005-06-15 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP3215382B2 (ja) 1998-02-17 2001-10-02 松下電器産業株式会社 半導体装置及びその製造方法
JP3459355B2 (ja) * 1998-03-27 2003-10-20 株式会社東芝 半導体装置およびその製造方法
JP3877109B2 (ja) * 1998-12-02 2007-02-07 富士通株式会社 半導体装置およびその製造方法
US6313003B1 (en) * 2000-08-17 2001-11-06 Taiwan Semiconductor Manufacturing Company Fabrication process for metal-insulator-metal capacitor with low gate resistance

Also Published As

Publication number Publication date
US20020117755A1 (en) 2002-08-29
KR20020070074A (ko) 2002-09-05
JP2002252280A (ja) 2002-09-06
US6586838B2 (en) 2003-07-01
KR100403527B1 (ko) 2003-10-30

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